CN205488129U - Anti -interference anticorrosive thick film hybrid integrated circuit - Google Patents
Anti -interference anticorrosive thick film hybrid integrated circuit Download PDFInfo
- Publication number
- CN205488129U CN205488129U CN201520992967.2U CN201520992967U CN205488129U CN 205488129 U CN205488129 U CN 205488129U CN 201520992967 U CN201520992967 U CN 201520992967U CN 205488129 U CN205488129 U CN 205488129U
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- CN
- China
- Prior art keywords
- thick film
- integrated circuit
- pipe cap
- hybrid integrated
- tube base
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Anti -interference anticorrosive thick film hybrid integrated circuit comprises pipe cap, tube base, pin, semiconductor integrated circuit chip, and the bonding wire bonded is in tube base thick film ceramic substrate metallic bonding district for the semiconductor integrated circuit chip, and the pipe cap encapsulates on the tube base, the different with original thick film hybrid integrated circuit is: the pipe cap has metallic internal layer and pottery outer, and the tube base has ceramic base member, and the tube base internal surface has metallic internal layer, other has the chip component dress to paste on the thick film ceramic substrate. Like this, the two combines with ceramic material and metal material for tube base and pipe cap, realizes the electromagnetic shield from the low frequency to the high frequency, make the encapsulation inside and outside electromagnetic environment reach good isolation to realize thick film hybrid integrated circuit's anti -interference resistance to corrosion. With device wide application in the fields such as space flight, aviation, boats and ships, electron, communication, medical equipment, industrial control of this method production, the miniaturization of specially adapted equipment system, high frequency, highly reliable field.
Description
Technical field
This utility model relates to hydrid integrated circuit, it particularly relates to thick film hybrid integrated circuit, further for, relate to anti-interference anticorrosive thick film hybrid integrated circuit.
Background technology
In the integrated technology of original thick film hybrid integrated circuit, first thick film ceramic substrate dress is attached on metal base, again semiconductor chip, chip components and parts are directly filled and be attached on thick film substrate, bonding wire (spun gold or Si-Al wire) is used to carry out the wire bonding of chip and substrate again, substrate and the wire bonding of pin, complete whole electrical equipment to connect, finally in the specific atmosphere such as fine vacuum, high pure nitrogen or high-purity argon gas, metal base and metal pipe cap (or earthenware base and pottery pipe cap) are sealed to form.The subject matter that this circuit exists is in the environment of high frequency or electromagnetic interference, and metal can shield low frequency, intermediate frequency and the impact of part High-frequency Interference effectively, and when frequency continues to increase, the shielding action of metal will be deteriorated.On the contrary, pottery does not has screening ability to low frequency, intermediate frequency, but has good screening ability to high frequency.Therefore, Metal Packaging, ceramic package is used all can not to meet from low frequency, the shielding requirements of intermediate frequency to high frequency full frequency band.When causing thick film hybrid integrated circuit to use in requiring jamproof environment, need in use system, increase substantial amounts of shielding measure, cause inconvenience to use, be unfavorable for the miniaturization of change system, integrated and lighting.On the other hand, owing to using metal shell, corrosion resistance is poor, is not suitable for carrying in corrosive severe atmosphere.
nullIn Chinese patent database，In Chinese patent database，The patent and the patent application that relate to thick film hybrid integrated circuit have more than ten parts，Such as No. 2011104461041 " integrated approaches of the controlled thick film hybrid integrated circuit of highly integrated high-reliability working temperature "、No. 2012105301453 " a kind of film-forming process for thick film hybrid integrated circuit "、No. ZL2012103961942 " integrated approach of highly sensitive temperature control thick film hybrid integrated circuit "、No. ZL2012105353566 " integrated approach of three-dimensionally integrated power thick film hybrid integrated circuit "、No. ZL201210535366X " integrated approach of a kind of high integration power thick film hybrid integrated circuit "、No. 2012105373165 " methods improving thick film hybrid integrated circuit homogeneity bonding system quality conformance " etc..Up to now, there is no the application part of anti-interference anticorrosive thick film hybrid integrated circuit.
Summary of the invention
This utility model aims to provide a kind of anti-interference anticorrosive thick film hybrid integrated circuit, it is achieved electromagnetic shielding from low to high, increases capacity of resisting disturbance, solves corrosion resistance problem simultaneously.
The anti-interference anticorrosive thick film hybrid integrated circuit that designer provides is made up of pipe cap, Guan Ji, pin, semiconductor integrated circuit chip, chip components and parts, semiconductor integrated circuit chip dress is attached on thick film ceramic substrate, and with metallic bond plying, corresponding with thick film ceramic substrate for the bonding region on semiconductor integrated circuit chip surface metal bonding district being carried out bonding connection, pipe cap is encapsulated on Guan Ji；Unlike original thick film hybrid integrated circuit: pipe cap and Guan Ji have inner metallic layer and outer layer ceramic matrix；Chip components and parts dress is separately had to be attached on thick film ceramic substrate.
The metal of above-mentioned pipe cap metal level and pipe base metal layer is chromium and gold.
The integrated approach of anti-interference anticorrosive thick film hybrid integrated circuit is: at earthenware base, the inner surface of pottery pipe cap of sinter molding in advance, the mode using coating metal paste sintering or electroless plating grows required metal level, then carries out dress patch, wire bonding and the sealing cap of semiconductor integrated circuit chip.
This utility model has the advantage that electromagnetic shielding the most from low to high, makes electromagnetic environment inside and outside encapsulation reach good isolation, promotes the capacity of resisting disturbance of thick film hybrid integrated circuit；2. resistance to corrosion is strong；3. the miniaturization of change system, integrated and lighting are conducive to；4. the reliability of change system is improved.
Device of the present utility model is widely used in the fields such as space flight, aviation, boats and ships, electronics, communication, armarium, Industry Control, is particularly well-suited to change system miniaturization, high frequency, highly reliable field, has wide market prospect and application space.
Accompanying drawing explanation
Fig. 1 is original thick film hybrid integrated circuit structural representation, and Fig. 2 is anti-interference anticorrosive thick film hybrid integrated circuit structural representation of the present utility model.
In figure, 1 is metal base, and 2 is metab, 3 is metal pin, and 4 is metal pipe cap, and 5 is semiconductor integrated circuit chip, 6 is bonding wire, and 7 is thick-film resistor, and 8 is thick film conduction band/bonding region, 9 is thick film ceramic substrate back metal level, and 10 is thick film ceramic substrate, and 11 is pipe cap ceramic matrix, 12 is pipe cap inner surface inner metallic layer, 13 is pipe base ceramic matrix, and 14 is pipe base inner surface inner metallic layer, and 15 is chip components and parts.
Detailed description of the invention
Embodiment: such as the anti-interference anticorrosive thick film hybrid integrated circuit of Fig. 2, it is made up of pipe cap, Guan Ji, pin, semiconductor integrated circuit chip 5, chip components and parts 15, semiconductor integrated circuit chip 5 bonding wire 6 is bonded on pipe base thick film ceramic substrate metal bonding region 8, and pipe cap is encapsulated on Guan Ji；Pipe cap has top ceramic layer 11 and pipe cap inner surface inner metallic layer 12, and Guan Ji has ceramic matrix 13, pipe base inner surface to have inner metallic layer 14；Thick film ceramic substrate is attached on Guan Ji by metal layer on back 9 dress；Chip components and parts dress is separately had to be attached on thick film ceramic substrate.
The metal-layer structure of pipe cap inner surface inner metallic layer 12 and pipe base inner surface inner metallic layer 14 is chromium and gold.
Claims (2)
1. an anti-interference anticorrosive thick film hybrid integrated circuit, it is made up of pipe cap, Guan Ji, pin, semiconductor integrated circuit chip (5), chip components and parts (15), semiconductor integrated circuit chip (5) bonding wire (6) is bonded on thick film ceramic substrate metal bonding region (8) above Guan Ji, and pipe cap is encapsulated on Guan Ji；It is characterized in that pipe cap has top ceramic layer (11) and pipe cap inner surface inner metallic layer (12), Guan Ji has ceramic matrix (13), pipe base inner surface to have inner metallic layer (14)；Thick film ceramic substrate is attached on Guan Ji by metal layer on back (9) dress；Chip components and parts dress is separately had to be attached on thick film ceramic substrate.
Anti-interference anticorrosive thick film hybrid integrated circuit the most as claimed in claim 1, it is characterised in that the metal-layer structure of described pipe cap inner surface inner metallic layer (12) and pipe base inner surface inner metallic layer (14) is chromium and gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520992967.2U CN205488129U (en) | 2015-12-04 | 2015-12-04 | Anti -interference anticorrosive thick film hybrid integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520992967.2U CN205488129U (en) | 2015-12-04 | 2015-12-04 | Anti -interference anticorrosive thick film hybrid integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205488129U true CN205488129U (en) | 2016-08-17 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520992967.2U Active CN205488129U (en) | 2015-12-04 | 2015-12-04 | Anti -interference anticorrosive thick film hybrid integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205488129U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106570950A (en) * | 2016-11-14 | 2017-04-19 | 中北大学 | Miniaturized multifunctional structure missile measurement and control instrument module, shell and black box |
-
2015
- 2015-12-04 CN CN201520992967.2U patent/CN205488129U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106570950A (en) * | 2016-11-14 | 2017-04-19 | 中北大学 | Miniaturized multifunctional structure missile measurement and control instrument module, shell and black box |
| CN106570950B (en) * | 2016-11-14 | 2019-01-22 | 中北大学 | A kind of micromation multifunction structure bullet measurement and control instrument module, shell and black box |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 550018 Guizhou Province, Guiyang city new North Avenue No. 238 Patentee after: Guizhou Zhenhua Fengguang Semiconductor Co.,Ltd. Address before: 550018 Guizhou Province, Guiyang city new North Avenue No. 238 Patentee before: GUIZHOU ZHENHUA FENGGUANG SEMICONDUCTOR Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |