CN205428896U - Concave station tube is colded pressing and is encapsulated power semiconductor - Google Patents
Concave station tube is colded pressing and is encapsulated power semiconductor Download PDFInfo
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- CN205428896U CN205428896U CN201520913208.2U CN201520913208U CN205428896U CN 205428896 U CN205428896 U CN 205428896U CN 201520913208 U CN201520913208 U CN 201520913208U CN 205428896 U CN205428896 U CN 205428896U
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Abstract
The utility model provides a concave station tube is colded pressing and is encapsulated power semiconductor. Belongs to the technical field of power semiconductor devices. It mainly be solve that current boss formula tube power semiconductor exists that the assembly degree of difficulty is big, the assembly error very easily makes the chip atress uneven and become invalid and be unfavorable for device and the miniaturized problem of subassembly. Its leading features is: encapsulate the valve fence under including, make pottery porcelain ring and positive pole conducting layer, fixed film, chip, briquetting, negative pole conducting layer down and make pottery porcelain ring on, and encapsulate the valve fence on and, the central authorities of negative pole conducting layer, positive pole conducting layer establish the same spill mesa of tangible form, under encapsulate the valve fence and encapsulate valve fence, negative pole conducting layer and positive pole conducting layer material on, for the coalesced copper, the nickel dam has been plated on the surface. The utility model has the characteristics of thickness is thin, light in weight and simple installation, encapsulation safety, power semiconductor such as all kinds of thyristors of mainly used and rectifying tube.
Description
Technical field
This utility model belongs to power semiconductor device technology field, is specifically related to a kind of concave station shell and colds pressing encapsulation power semiconductor, including all kinds of IGCTs and rectifier tube.
Background technology
At present, in power semiconductor and manufacturing technology field, the encapsulation technology of power semiconductor increasingly comes into one's own.Conventional shell form is projective table type shell, and its cathode and anode table top protrudes from device, it is necessary to using hole, location to coordinate the form of alignment pin to position, assembly difficulty is big, and assembling error easily makes chip unbalance stress lose efficacy.Element height is at 25mm ~ 40mm simultaneously, and manufacturing cost is high, and weight is big, is unfavorable for the miniaturization of device and assembly；And the conductive layer of concave station shell and valve hurdle material be mostly can valve, heat conductivility is poor, and thermal resistance is big, and device welded encapsulation all uses argon arc welding (or plasma weldering) mode to carry out, postwelding shell sealing outward appearance out-of-flatness, the most unsightly, easily leak gas.Using combustion of hydrogen high temperature sintering argon to carry out during encapsulation, hydrogen uses process to there are major safety risks, uses environment harsh, is unfavorable for producing extension.
Summary of the invention
For solving the problems referred to above, this utility model provides a kind of concave station shell to cold pressing encapsulation power semiconductor, is characterized in that thickness is thin, lightweight, and simple installation, encapsulation safety.
Technical solution of the present utility model is: a kind of concave station shell is colded pressing encapsulation power semiconductor, including lower closure, fixing thin film, chip, briquetting and upper closure, upper closure includes cathode conductive layer, upper ceramic ring and upper packaging valve hurdle, lower closure includes lower packaging valve hurdle, lower ceramic ring and anode conductive layer, it is characterised in that: described cathode conductive layer, the central authorities of anode conductive layer are provided with the spill table top that shape is identical；Lower packaging valve hurdle, upper packaging valve hurdle, cathode conductive layer and anode conductive layer material are oxygen-free copper, and surface is coated with nickel dam.
Spill table top described in technical solution of the present utility model is cone spill table top, and the planar diameter of spill table top is 15 ~ 50mm.
The surface nickel layer thickness of the lower packaging valve hurdle described in technical solution of the present utility model, upper packaging valve hurdle, cathode conductive layer and anode conductive layer is 1.5～7 μm.
The surface nickel dam of the lower packaging valve hurdle described in technical solution of the present utility model, upper packaging valve hurdle, cathode conductive layer and anode conductive layer is low stress dark nickel nickel dam.
Technical solution of the present utility model also includes gate lead and the tetrafluoro sleeve pipe being sleeved on outside gate lead.
Upper ceramic ring described in technical solution of the present utility model, lower ceramic ring material are the Al2O3 pottery of 95%, and reinforcement curved surface that axially external of lower ceramic ring is the face of cylinder or indent or the pointed shape curved surface of evagination.
The upper and lower pad being lined with aluminum, silver, molybdenum or copper material of chip described in technical solution of the present utility model or washbowl.
Chip described in technical solution of the present utility model is power scr, rectifier tube chip.
This utility model is provided with the lower closure of the identical spill table top of shape, upper closure owing to using central authorities; lower closure, the shirt rim, valve hurdle of upper closure and negative electrode, anode conductive layer material are oxygen-free copper; surface is coated with nickel dam; thus when upper closure and lower closure encapsulate; cold welding mode can be used to carry out; cold pressing encapsulation time; the inert protective gas such as internal first evacuation, backlash nitrogen or helium; Cold welding is easy and simple to handle; convenient, flexibly; production safety hidden danger is substantially reduced, encapsulated device good airproof performance, and performance is more stable, reliable.This utility model has that thickness is thin, lightweight and simple installation, the feature of encapsulation safety.This utility model is mainly used in all kinds of IGCT and rectifier tube constant power semiconductor device.
Accompanying drawing explanation
Fig. 1 be concave station shell cold pressing encapsulation IGCT structural representation.
Fig. 2 be concave station shell cold pressing encapsulation rectifier tube structural representation.
Fig. 3 is the structural representation of lower closure (having reinforcement porcelain ring).
Fig. 4 is the structural representation of lower closure (prominent pointed shape porcelain ring).
In figure: 1, lower closure, 2, fixing thin film, 3, chip, 4, briquetting, 5, gate lead, 6, tetrafluoro sleeve pipe, 7, upper closure.
Detailed description of the invention
Below in conjunction with the accompanying drawings this utility model is described in further detail.
As shown in Figure 1.This utility model one concave station shell encapsulation power semiconductor of colding pressing is made up of lower closure 1, fixing thin film 2, chip 3, briquetting 4, gate lead 5, tetrafluoro sleeve pipe 6, upper closure 7, upper closure 7 includes cathode conductive layer, upper ceramic ring and upper packaging valve hurdle, and lower closure 1 includes lower packaging valve hurdle, lower ceramic ring and anode conductive layer.Wherein, fixing thin film 2, chip 3, briquetting 4, gate lead 5 are identical with the correspondence in existing power semiconductor with tetrafluoro sleeve pipe 6, and tetrafluoro sleeve pipe 6 is sleeved on outside gate lead 5, except for the difference that descends closure 1 and upper closure 7.The anode conductive layer of lower closure 1, the cathode conductive layer central authorities of upper closure 7 are provided with the spill table top that shape is identical, and spill table top is cone spill table top, and the planar diameter of spill table top is 15 ~ 50mm, plays the role of positioning, facilitates device to assemble.During device encapsulation, upper closure 7, the negative electrode of lower closure 1, anode conductive layer are concentric with lower closure 1 by closure 7 on cold welding mould position assurance, inside cavity evacuation, rush the inert protective gas such as nitrogen or helium.The lower packaging valve hurdle of lower closure 1, the upper shirt rim, packaging valve hurdle of upper closure 7 and negative electrode, anode conductive layer material are oxygen-free copper, surface is coated with nickel dam or low stress dark nickel nickel dam, surface nickel layer thickness is 1.5～7 μm, it is packaged welding by cold press supercharging, there is the features such as thermal resistance is low, heat conduction is fast, parasitic pressure drop is little, the most oxidizable.Cold pressing encapsulation time, the inert protective gas such as internal first evacuation, backlash nitrogen or helium；Cold welding is easy and simple to handle, and convenient, flexible, production safety hidden danger is substantially reduced.Encapsulated device good airproof performance, performance is more stable, reliable.
As shown in Figure 2.Without gate lead and tetrafluoro sleeve pipe in power semiconductor unlike Fig. 1, other is all identical with the correspondence in Fig. 1.
As shown in Figure 3.Lower ceramic ring, upper ceramic ring material are the Al of 95%2O3Pottery, its purity ensure that the intensity of device and high insulating properties.Lower ceramic ring has reinforcement shirt rim, increases creep age distance.
As shown in Figure 4.Upper ceramic ring, lower ceramic ring material are the Al2O3 pottery of 95%, and its purity ensure that the intensity of device and high insulating properties.Lower ceramic ring is prominent angular shape, increases creep age distance.
In device, chip 3 can be IGCT, rectifier tube constant power IGCT, rectifier tube chip.Chip 3 upper and lower can pad or washbowl, material can be aluminum, silver, molybdenum, copper etc..
The above, be only preferred embodiment of the present utility model, and this utility model is not made any pro forma restriction.Therefore, every without departing from content of the present utility model, to any amendment made for any of the above embodiments, equivalent, equivalence change and modify according to technical spirit of the present utility model, all still fall within the scope of technical solutions of the utility model protection.
Claims (6)
1. a concave station shell is colded pressing encapsulation power semiconductor, including lower closure (1), fixing thin film (2), chip (3), briquetting (4) and upper closure (7), upper closure (7) includes cathode conductive layer, upper ceramic ring and upper packaging valve hurdle, lower closure (1) includes lower packaging valve hurdle, lower ceramic ring and anode conductive layer, it is characterised in that: also include gate lead (5) and be sleeved on gate lead (5) tetrafluoro sleeve pipe (6) outward；Described chip (3) is power scr, rectifier tube chip；Described cathode conductive layer, the central authorities of anode conductive layer are provided with the spill table top that shape is identical；Lower packaging valve hurdle, upper packaging valve hurdle, cathode conductive layer and anode conductive layer material are oxygen-free copper, and surface is coated with nickel dam.
A kind of concave station shell the most according to claim 1 is colded pressing encapsulation power semiconductor, it is characterised in that: described spill table top be conical spill table top, and the planar diameter of spill table top is 15 ~ 50mm.
A kind of concave station shell the most according to claim 1 and 2 is colded pressing encapsulation power semiconductor, it is characterised in that: the surface nickel layer thickness of described lower packaging valve hurdle, upper packaging valve hurdle, cathode conductive layer and anode conductive layer is 1.5～7 μm.
A kind of concave station shell the most according to claim 1 and 2 is colded pressing encapsulation power semiconductor, it is characterised in that: the surface nickel dam of described lower packaging valve hurdle, upper packaging valve hurdle, cathode conductive layer and anode conductive layer is low stress dark nickel nickel dam.
A kind of concave station shell the most according to claim 1 and 2 is colded pressing encapsulation power semiconductor, it is characterised in that: described upper ceramic ring, lower ceramic ring material are the Al of 95%2O3Pottery, and axially external of lower ceramic ring is the face of cylinder, the reinforcement curved surface of indent or the pointed shape curved surface of evagination.
A kind of concave station shell the most according to claim 1 and 2 is colded pressing encapsulation power semiconductor, it is characterised in that: the described upper and lower pad being lined with aluminum, silver, molybdenum or copper material of chip (3) or washbowl.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520913208.2U CN205428896U (en) | 2015-11-17 | 2015-11-17 | Concave station tube is colded pressing and is encapsulated power semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520913208.2U CN205428896U (en) | 2015-11-17 | 2015-11-17 | Concave station tube is colded pressing and is encapsulated power semiconductor |
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| CN205428896U true CN205428896U (en) | 2016-08-03 |
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| CN201520913208.2U Active CN205428896U (en) | 2015-11-17 | 2015-11-17 | Concave station tube is colded pressing and is encapsulated power semiconductor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524862A (en) * | 2020-04-30 | 2020-08-11 | 全球能源互联网研究院有限公司 | Chip packaging electrode, preparation method thereof and chip packaging structure |
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2015
- 2015-11-17 CN CN201520913208.2U patent/CN205428896U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524862A (en) * | 2020-04-30 | 2020-08-11 | 全球能源互联网研究院有限公司 | Chip packaging electrode, preparation method thereof and chip packaging structure |
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