CN102129986B - Method for manufacturing glass sealed diode by adopting metallurgy bonding method - Google Patents
Method for manufacturing glass sealed diode by adopting metallurgy bonding method Download PDFInfo
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- CN102129986B CN102129986B CN 201010610251 CN201010610251A CN102129986B CN 102129986 B CN102129986 B CN 102129986B CN 201010610251 CN201010610251 CN 201010610251 CN 201010610251 A CN201010610251 A CN 201010610251A CN 102129986 B CN102129986 B CN 102129986B
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- diode
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- glass sealed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention discloses a method for manufacturing a glass sealed diode by adopting a metallurgy bonding method. An internal lead wire of a diode and a chip of the diode realize the electric signal connection between the chip and an external lead wire by adopting the metallurgy bonding method. By the method, the metallurgy bonding of the internal lead wire and a chip electrode is realized so that the electric signal connection between the chip and the external lead wire is realized. The glass sealed diode produced by the method has high reliability and can be applied to various severe environmental conditions without the problems of open circuit or failure.
Description
Technical field
The present invention relates to a kind of method that adopts metallurgical bonding technology to make glass sealed diode, belong to the semiconductor device fabrication technical field.
Background technology
The key property of diode is a unilateral conduction, and just under the effect of forward voltage, conducting resistance is very little; And conducting resistance is very big or less under the reverse voltage effect.Just because of diode has above-mentioned characteristic, often be used for rectification and voltage stabilizing to it in the circuit.
After the characteristics of voltage stabilizing didoe added the reverse voltage puncture exactly, the voltage at its two ends remained unchanged basically.And just damaged behind the rectifier diode reverse breakdown.Like this, after the voltage-stabiliser tube place in circuit, if because supply voltage fluctuates, or other reason is when causing in the circuit each point variation in voltage, the voltage at load two ends will remain unchanged basically.
Rectifier diode and voltage stabilizing didoe all are the PN semiconductor device, and different is, and rectifier diode uses is unilateral conduction, and voltage stabilizing didoe is to have utilized its reverse characteristic, in circuit, oppositely connects.
Existing glass sealed diode encapsulation generally adopts compression joint technique to accomplish being connected of outer lead and chip electrode.The shortcoming of this compression joint technique is that the electrode of chip is drawn and had certain hidden danger, and the phenomenon of opening a way can appear in serious situation.
Summary of the invention
The technical issues that need to address of the present invention just are to overcome the defective of prior art; A kind of method that adopts metallurgical bonding method to make glass sealed diode is provided; It has realized the metallurgical bonding of lead and chip electrode, thereby realizes that chip is connected with the reliable and stable of outer lead.The glass sealed diode reliability that the present invention produced is high, can be applied under the various severe environmental conditions, does not have the open failure problem.
For addressing the above problem, the present invention adopts following technical scheme:
The invention provides a kind of method that adopts metallurgical bonding method to make glass sealed diode, said diode lead adopts metallurgical bonding method to realize that chip is connected with the signal of telecommunication of outer lead with diode chip for backlight unit.
Specifically comprise the following steps:
1), preparation alloy weld tabs: 50 microns of thickness, diameter phi is slightly less than the glass bulb internal diameter;
2), preparation chip layout: the glass bulb internal diameter that the chip diameter equals 0.8 times;
3), carry out the glass envelope according to common process, 600 ℃ of glass envelope temperature, metallurgical bonding temperature pulse of short time of increase in the glass envelope temperature rise process; 650 ℃ of metallurgical bonding temperatures; Time 5min makes lead realize being connected through metallurgical bonding method with diode chip for backlight unit, forms glass sealed diode at last.
Compared with present technology the present invention has the following advantages:
1, the glass sealed diode reliability that the present invention produced is high, can be applied under the various severe environmental conditions, does not have open loop failure mode.
2, the glass sealed diode anti-current impact capacity that the present invention produced is big, and the common process product improves rush of current intensity 20% on year-on-year basis.
3, the glass sealed diode encapsulation rate of finished products that the present invention produced is high, compares common process and improves 2 percentage points.
4, high, the good reproducibility of glass sealed diode chip technology stability that the present invention produced has excellent connection reliability.
Embodiment
Glass sealed diode chip basal body material selects silicon epitaxy disk (N type) in the present invention, and electricalresistivity=0.6 Ω .cm < 111>at first processes the glass sealed diode chip, chip size: 0.5mm * 0.5mm
Select the DO-35 type glass bulb of internal diameter φ 0.76mm for use,
Weld tabs is selected φ 0.7mm for use, thickness 0.05mm
According to the common process encapsulation, 600 ℃ of glass envelope temperature, 650 ℃ of time 5min of metallurgical bonding temperature.
Carry out glass envelope voltage-stabiliser tube ZW60 according to technology, puncture voltage VB=11.5-12V, all curve is hard breakdown V.
The glass sealed diode chip that adopts the processes in the present embodiment to manufacture has excellent connection reliability.
The present invention is less demanding to material, can realize the metallurgical bonding encapsulation of all glass sealed diodes.The raw material that adopt in the present invention are market and purchase, and the equipment of use is conventional equipment.
What should explain at last is: obviously, the foregoing description only be for clearly the present invention is described and is done for example, and be not qualification to execution mode.For the those of ordinary skill in affiliated field, on the basis of above-mentioned explanation, can also make other multi-form variation or change.Here need not also can't give exhaustive to all execution modes.And conspicuous variation of being amplified out thus or change still are among protection scope of the present invention.
Claims (1)
1. method that adopts metallurgical bonding method to make glass sealed diode, it is characterized in that: said diode lead adopts metallurgical bonding method realization chip to be connected with the signal of telecommunication of outer lead with diode chip for backlight unit;
Comprise the following steps:
1), preparation alloy weld tabs: 50 microns of thickness, diameter phi is slightly less than the glass bulb internal diameter;
2), preparation chip layout: the glass bulb internal diameter that the chip diameter equals 0.8 times;
3), carry out the glass envelope according to common process, 600 ℃ of glass envelope temperature, metallurgical bonding temperature pulse of short time of increase in the glass envelope temperature rise process; 650 ℃ of metallurgical bonding temperatures; Time 5min makes lead realize being connected through metallurgical bonding method with diode chip for backlight unit, forms glass sealed diode at last.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010610251 CN102129986B (en) | 2010-12-29 | 2010-12-29 | Method for manufacturing glass sealed diode by adopting metallurgy bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010610251 CN102129986B (en) | 2010-12-29 | 2010-12-29 | Method for manufacturing glass sealed diode by adopting metallurgy bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102129986A CN102129986A (en) | 2011-07-20 |
| CN102129986B true CN102129986B (en) | 2012-10-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010610251 Active CN102129986B (en) | 2010-12-29 | 2010-12-29 | Method for manufacturing glass sealed diode by adopting metallurgy bonding method |
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| Country | Link |
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| CN (1) | CN102129986B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105336768B (en) * | 2015-10-13 | 2018-10-26 | 济南市半导体元件实验所 | The packaging technology of highly reliable surface mount glass sealed diode |
| CN105405772B (en) * | 2015-10-26 | 2018-09-11 | 北京时代民芯科技有限公司 | A kind of diode chip for backlight unit fusion welding method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR200299491Y1 (en) * | 2002-09-02 | 2003-01-03 | 코리아옵토 주식회사 | A Surface mounting type light emitting diode |
| CN2638241Y (en) * | 2003-07-21 | 2004-09-01 | 汕尾德昌电子有限公司 | Improved glass sealed diode |
| CN1790845A (en) * | 2004-12-17 | 2006-06-21 | 上海飞恩微电子有限公司 | High-speed broadband photoelectric transmission TO-CAN assembly |
| CN1307699C (en) * | 2005-03-14 | 2007-03-28 | 西安交通大学 | Method for making crimping interconnection technology based power electronic integrated module |
| US20090065792A1 (en) * | 2007-09-07 | 2009-03-12 | 3M Innovative Properties Company | Method of making an led device having a dome lens |
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2010
- 2010-12-29 CN CN 201010610251 patent/CN102129986B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102129986A (en) | 2011-07-20 |
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Address after: 122000 105, section 5, Wenhua Road, Longcheng District, Chaoyang City, Liaoning Province Patentee after: Chaoyang Microelectronics Technology Co., Ltd Address before: 122000 No. two, section 75, Chaoyang City, Liaoning, Xinhua Road Patentee before: CHAOYANG RADIO COMPONENTS Co.,Ltd. |
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