CN102544112A - Transient voltage suppression diode - Google Patents
Transient voltage suppression diode Download PDFInfo
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- CN102544112A CN102544112A CN2010105751282A CN201010575128A CN102544112A CN 102544112 A CN102544112 A CN 102544112A CN 2010105751282 A CN2010105751282 A CN 2010105751282A CN 201010575128 A CN201010575128 A CN 201010575128A CN 102544112 A CN102544112 A CN 102544112A
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- tube core
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
The invention discloses a transient voltage suppression diode. The transient voltage suppression diode comprises a diode base (2) connected with a lead wire (1). The diode base (2) is welded with a diode core (4) through a copper sheet (3). The other face of the diode core (4) is welded with an internal lead wire (5) through the copper sheet (3). Protection rubber (8) is arranged outside the diode core (4). A diode shell (6) is arranged on the diode base (2), and an insulating layer (7) is arranged between the diode shell (6) and the internal lead wire (5). With the adoption of the transient voltage suppression diode disclosed by the invention, the conflict among a transient pulse power, a reverse leakage current and a reverse breakdown voltage of the transient voltage suppression diode is solved, and the requirements on production and utilization are met. By improving an important structure, the transient voltage suppression diode has the characteristics of reasonable structural design, stable process, large transient pulse power, small reverse leakage current, high reliability and the like.
Description
Technical field
the present invention relates to a kind of transient voltage restraining diode, belong to the semiconductor diode technical field.
Background technology
transient voltage restraining diode is a kind of particular diode that on the basis of voltage-stabiliser tube, grows up, and is a kind of dynamical circuit brake.Have advantages such as volume is little, response is fast, transient absorption power is big, noiseless.Along with Aeronautics and Astronautics in recent years the transient power of transient voltage restraining diode is had higher requirement, present 1.5KW silicon transient voltage restraining diode series of products can not meet the demands far away.Need develop the bigger silicon transient voltage restraining diode of transient power for this reason.
Summary of the invention
the object of the present invention is to provide a kind of transient voltage restraining diode; The transient voltage restraining diode that with the transient power is 3KW and 5KW satisfies the specific (special) requirements of Aeronautics and Astronautics to the transient power of transient voltage restraining diode; Thereby satisfy the demand of producing and using, overcome the deficiency of prior art.
technical scheme of the present invention is achieved in that a kind of transient voltage restraining diode of the present invention comprises the base that is connected with lead-in wire; Base is through copper sheet and tube core welding; The tube core another side is through copper sheet and lead welding, and tube core is provided with protection glue outward; Base is provided with shell, is provided with insulating barrier between shell and the lead.
In
aforesaid transient voltage restraining diode, pyrometallurgy melting welding is adopted in said welding; Comprise the metallurgical melting welding of slicken solder between tube core and the copper sheet; Laser welding between shell and the base; Electric resistance welding between base and lead-in wire and copper sheet and the lead; During pyrometallurgy melting welding, weld empty area be controlled at connect area 5% in, increase the contact area of junction to greatest extent, reduce to connect thermal resistance.
In the aforesaid transient voltage restraining diode, said tube core is the regular hexagon that on chip, marks, and orthohexagonal thickness is 220 ± 10 μ m, and the diagonal angle length of side is 4.7～6.7mm; Said chip is on the dislocation-free single crystal silicon materials, to adopt long-time dark knot high-concentration dopant diffusion technology, and surface concentration is controlled at 10
21
/ cm
3
The PN junction of more than processing.
In
aforesaid transient voltage restraining diode, said PN junction is that diffusion N+ type layer is made PN junction on P type substrate, and diffusion P+ type layer is made ohm knot on P type substrate again, forms the N+PP+ structure; The structure of PN junction or diffusion N+ type layer is made ohm knot on N type substrate is made PN junction at N type substrate diffusion P+ type layer again, forms the P+NN+ structure.
compared with prior art, the transient power of existing transient voltage restraining diode is less, can not satisfy the increasingly high requirement of electronic product.The invention solves the contradiction between product transient pulse power, reverse leakage current, the reverse breakdown voltage, satisfied the demand of producing and using.Technology tackling key problem through critical process makes characteristics such as product has reasonable in design, process stabilizing, transient pulse power is big, reverse leakage current is little, reliability height.
The present invention adopts long-time dark knot high-concentration dopant diffusion technology, and surface concentration is controlled at 10
21
/ cm
3
The PN junction of more than processing.For effect deep, the shallow junction diffusion, carried out contrast test, below be 5KP200 product testing result: (extract 3 after the diffusion respectively and get survey voltage ready, it is as shown in Figure 5 to get the position ready, and result of the test is shown in table one.
Table one, dark, shallow junction diffusion contrast test record
can find out that by last table the puncture voltage consistency that adopts dark knot high concentration diffusion technology tube core obviously is superior to the tube core that adopts the shallow junction diffusion technology to produce, thereby have guaranteed the reliability of device.
Description of drawings
Fig. 1 is an encapsulating structure sketch map of the present invention:
Fig. 2 is the chip structure sketch map made from P type substrate;
Fig. 3 is the chip structure sketch map made from N type substrate;
When Fig. 4 is welding, produce and the cavity position sketch map;
Fig. 5 is when making dark, shallow junction diffusion effect, the location drawing of on chip, getting ready.
Being labeled as in
accompanying drawing: 1-lead-in wire, the 2-base, the 3-copper sheet, the 4-tube core, the 5-lead, the 6-shell, the 7-insulating barrier, 8-protects glue.
Embodiment
are done further detailed description below in conjunction with accompanying drawing and embodiment to the present invention, but not as to any restriction of the present invention.
embodiments of the invention: encapsulating structure sketch map of the present invention is as shown in Figure 1; A kind of transient voltage restraining diode of the present invention; Comprise the base 2 that is connected with lead-in wire 1; Base 2 is through copper sheet 3 and tube core 4 welding, and tube core 4 another sides are provided with protection glue 8 through copper sheet 3 and lead 5 welding outside the tube core 4; Base 2 is provided with shell 6, is provided with insulating barrier 7 between shell 6 and the lead 5; Pyrometallurgy melting welding is adopted in said welding; Comprise the metallurgical melting welding of slicken solder between tube core 4 and the copper sheet 3; Laser welding between shell 6 and the base 2; Electric resistance welding between base 2 and lead-in wire 1 and copper sheet 3 and the lead 5; During pyrometallurgy melting welding, weld empty area be controlled at connect area 5% in, increase the contact area of junction to greatest extent, reduce to connect thermal resistance.Said tube core 4 is the regular hexagons that on chip, mark, and orthohexagonal thickness is 220 ± 10 μ m, and the diagonal angle length of side is 4.7～6.7mm; Said chip is on the dislocation-free single crystal silicon materials, to adopt long-time dark knot high-concentration dopant diffusion technology, and surface concentration is controlled at 10
21
/ cm
3
The PN junction of more than processing; Said PN junction is that diffusion N+ type layer is made PN junction on P type substrate, and diffusion P+ type layer is made ohm knot on P type substrate again, forms the N+PP+ structure; The structure of PN junction or diffusion N+ type layer is made ohm knot on N type substrate is made PN junction at N type substrate diffusion P+ type layer again, forms the P+NN+ structure.
The practical implementation process is following:
are at the design aspect of chip.
for transient suppression device, and does not require that it works long hours at high-power state, and only requires an instantaneous state and can absorb a big power, therefore in design, will consider the problem of instantaneous high-power absorption emphatically.And the absorption of transient pulse power and transient thermal resistance are closely related.Thickness and the volume of reasonably choosing tube core can reduce transient thermal resistance; Use for reference the making experience of similar device; The present invention is diagonal angle length of side 4.7mm regular hexagon, thickness 220 ± 10 μ m with 3KP series of products die design, is diagonal angle length of side 6.7mm regular hexagon, thickness 220 ± 10 μ m with 5KP series of products die design.
prepare PN junction with diffusion method, and when selecting P type backing material for use, at first diffusion N+ type layer is made PN junction on P type substrate, spreads P+ type layer again and makes ohm knot, forms the N+PP+ structure.
when selecting N type backing material for use, at first diffusion N+ type layer is made ohm knot on N type substrate, spreads P+ type layer again and makes PN junction, forms the P+NN+ structure.
are removed the part selection and are taken into full account hot coupling, heat conduction, thermal capacity problem when product structure design, also consider the design of entire product mechanical strength emphatically.Our factory has possessed the Element Design technology and the production technology of the high-power silicon transient voltage restraining diode of 1.5KW series, has accumulated a large amount of experiences and basis, and sufficient technical guarantee is arranged.
The connection of all material all is to adopt pyrometallurgy melting welding to fire to form in
product component; Chip is connected the metallurgical melting welding of use slicken solder with electrode; Shell and base adopt laser welding; Shell is connected the employing electric resistance welding with lead.All these technologies are consistent with the high-power silicon transient voltage restraining diode of 1.5KW series all, through long-term practice test, prove and can satisfy fully that the device mechanical strength designs.
Following three problems owing to high-power transient voltage restraining diode will produce a large amount of heat dissipations when working, therefore must be considered in
in design when thermal design: 1, the heat absorption of device generation; 2, whether the heat of tube core generation evenly distributes; 3, the coupling of the heat between the device inside.
The radiating mode of
device is mainly heat conduction, and the quality of heat radiation is by the size decision of thermal resistance.Therefore, consider thermal resistance size on the heat pathway-be silicon chip and base.Characteristics to the transient voltage restraining diode; Though the transient pulse power of these two serial type spectrum products is all very big; But it is instantaneous, and the electric current through product is very big but the time that continue is shorter, and tube core moment can produce very big heat during device work; Heat must be absorbed by the electrode on tube core two sides fast, must consider emphatically during this design.
From the transient thermal resistance formula
Can know that after material was confirmed, thermal time constant τ increased; Transient thermal resistance RTS just reduces, and the absorbent energy of device work time institute is corresponding just to be increased, and that is to say; Its transient absorption power is high, and very crucial from the selection of thermal time constant formula visible material, increases material thickness W; Select specific heat CP and the big material of density p can reduce transient thermal resistance RTS greatly, make device can bear big transient pulse power.
are for high-power silicon transient voltage restraining diode; Only depend on silicon die, can not satisfy the absorption of the instantaneous macro-energy of transient voltage restraining diode pair far away, for this reason; Must increase the thermal time constant τ of its device inside structure; Consider that copper has enough thermal capacity, good heat-conductive characteristic and the feasibility on processing technology, so adopt copper as the material that improves thermal time constant τ, to satisfy instantaneous high-octane impact.
these series of products are carried out GJB33A-97 " semi-conductor discrete device general specification ", and the quality assurance grade is JP (general army), JT (special army) and JCT (ultra special army) Three Estate.We are that storage life designed over 20 years according to 20 years useful life, correspondingly in encapsulating structure, process implementing are to consider.This product adopts metallic packaging structure, has that volume is little, in light weight, high reliability features.Adopt this kind encapsulation, can satisfy the electrical quantity index request (particularly transient pulse peak power) of device fully, and the examination requirement of mechanical stress, environmental test accordingly.The measure of the following aspects is arranged in manufacture process:
1), adopt copper product to do electrode slice, solved the problem of device inside heat conduction, heat coupling;
2), select suitable sintering temperature and protective gas during sintering, soak into well to guarantee tube core and base.Through improving technology, eliminated the cavity between tube core, scolder, the base, guarantee that tube core and base bonding is good, increased the contact area between tube core and the base to greatest extent;
3), before the product encapsulation, must and adopt ladder heating-cooling furnace drying method through strict clean, the steam and the removable particle of expeling surface adsorption.Find out the parameter of laser boxing process lowest optimization through experiment, controlled device air tightness and moisture content preferably;
4), for this kind encapsulating structure, adopt the laser sealing technique, thoroughly solved the problem of device fifth wheel.
quality of chip quality directly has influence on the reliability of device, because the inhomogeneous or structure and the defective workmanship of material can cause the operating current concentration of local, promptly heat can not evenly distribute on tube core, forms focus.For high-power, high-current device, hot spot-effect is more outstanding.For addressing this problem, we mainly carry out the work of two aspects, and first: adopt the dislocation-free single crystal silicon materials; Second: adopt long-time dark knot high-concentration dopant diffusion technology, surface concentration is controlled at more than the 1021/cm3.The current concentration that adopts the dislocation-free single crystal silicon materials can avoid the material self-defect to cause.Adopt long-time dark knot high-concentration dopant diffusion technology with respect to short time shallow junction diffusion technology can obtain defective still less, more smooth PN junction; This is owing in the chip production process, can in tube core, introducing defective owing to reasons such as impurity and thermal stress are inevitable; These defectives mainly concentrate on the zone, top layer of chip, and depth-diffusion process can be avoided the more zone, top layer of defective; Secondly; The puncture voltage consistency of depth-diffusion process is higher, and this is because the resistivity of the selected substrate silicon material of depth-diffusion process is lower, and along with the reduction of the substrate silicon resistivity of material of choosing; Each regional resistivity consistency is higher on its silicon chip; Thereby on material, guaranteed the smooth of diffusion back PN junction, when making device work, electric current can flow through whole tube core more uniformly.
welding technology.The reduction thermal resistance that freezes reduces the cavity.The purpose that freezes is under protective gas, through heat, tube core and base is welded together, and forms good Ohmic contact, is the critical process in the device fabrication processes.The quality of its technology controlling and process is directly connected to the antisurge ability of device, is exactly the transient pulse power that device can bear.When this just required to freeze, between tube core and the copper sheet, bonding was firm between copper sheet and the base, and it is smooth to be stained with profit, eliminates the slit of freezing, and reduces the cavity, guarantees to reduce thermal resistance by chip real estate the heat absorption that in time tube core is produced to greatest extent.Thermal resistance is the parameter that characterizes semiconductor device heat-sinking capability size, is limiting under the semiconductor junction temperature, and the dissipation power that device can bear is determined by thermal resistance.For big electric current, large power semiconductor device thermal resistance is unusual important parameters.Thermal resistance comprises with the lower part: the thermal resistance of (1) tube core; (2) thermal resistance of the tube core and the shell Contact welding bed of material; (3) thermal resistance of shell itself.Generally speaking, the thermal resistance of tube core and shell itself is determined by manufacturing materials and manufacture craft, and is constant basically when assembling at the rear portion, determines and the thermal resistance of the tube core and the shell Contact welding bed of material is a processing quality by the operation that freezes.
The quality of
welding technology effect depends on infiltration degree, i.e. the scolder of fusion is in the diffuses flow situation of face of weld.In the process of freezing, have a large amount of gas and produce, the gas that the solder flux in the scolder produces when volatilizing the gas that produces, the air of wrapping up in band when shelving and solder fusing.If these gases can not emit, will be present in the solder layer of fusing, influence the diffuses flow of scolder at face of weld, when solder cools, just formed cavity (also have person for bubble).As shown in Figure 2.The category-A cavity can make through the current unevenness of chip and spare among the figure, forms easily local " hot spot "; Category-B and C class cavity have reduced the capacity of heat transmission of solder layer.
The existence in
cavity makes tube core and base effectively be stained with the minimizing of profit area; When product through high temperature service life, temperature cycles, power after the screening test such as seasoned; The thermal stress that produces because the thermal coefficient of expansion of chip, base and solder layer is different can be quickened the thermal fatigue failure of device, and gently then thermal resistance increases; Heavy then crackle appears in solder layer, had a strong impact on the q&r of product.It is thus clear that how important thermal resistance is for big electric current, large power semiconductor device, reduce thermal resistance, just must reduce the cavity.Existing its tube core of 1.5KW silicon transient voltage restraining diode of our factory welds empty area and is controlled in 5%; For the present state of arts of our factory; Resolve 3KW, the 5KW silicon transient voltage restraining diode large tracts of land tube core empty problem that freezes, must tube core be welded empty area and be controlled in 5% equally.
The cavity must be reduced for high-power transient voltage restraining diode in
; Reduce the thermal resistance that freezes; The quality quality of used scolder, scaling powder of freezing is extremely important for the large tracts of land welding procedure, in process implementing, needs high scolder of credit rating and scaling powder.
Welding technology is further optimized in
; Adopt the suitable protective gas that freezes (purity of gas, gas flow size etc.); Freeze temperature, freeze the time etc.; Guarantee to eliminate the cavity between tube core, scolder, the base, guarantee that tube core and base bonding is good, increased the contact area between tube core and the base to greatest extent.
table top moulding, etching process.Be shaped to the orthogonal rake moulding for our desirable chip of high-power transient voltage restraining diode, PN junction punctured betide as far as possible in the body, improve device and bear transient pulse power capability and reliability.
when development, we change traditional chip ultrasonic cut technology into scribing process.This is because ultrasonic cut can cause tube core to collapse defectives such as limit, unfilled corner, crackle, influences rate of finished products.Can significantly reduce this type of generation of defects after adopting scribing process.
The way of corrosion is adopted in
, removes PN junction surface oxide layer and other ions and mechanical damage, weakens surface field, PN junction is punctured betide in the body, obtains desirable table top moulding.The quality of moulding is directly connected to device reliability and antisurge ability; This adopts which kind of etching process (like the prescription of corrosion, the temperature of corrosion, time of corrosion or the like); Could control corrosion rate preferably; Make chip table smooth, smooth, obtaining desirable table top moulding is key process technology.
silicon chip surface forms one deck affected layer and pollution because of machining stress, and this layer affected layer must be removed.Normally adopt the mode of chemical corrosion.And according to the difference of employed corrosive liquid, chemical corrosion is divided into two kinds of sour corrosion and alkaline corrosions again.
) sour corrosion
sour corrosion is isotropic process, and each crystal orientation of silicon wafer receives uniform chemical corrosion in other words, and acid etching solution commonly used is made up of nitric acid (HNO3), hydrofluoric acid (HF) and the buffering acid etc. of different proportionings.
The mechanism of the reaction of
sour corrosion comprises two steps: at first, be to utilize HNO3 to come oxidized surface, shown in (1) and formula (2); Next the oxide that forms of silicon wafer surface can be become soluble complexes and removes, shown in (3) by the HF complexing.Therefore, HNO3 is a kind of oxidant, and HF then is a complexing agent.
Step I: Si+2HNO
3
→ SiO
2
+ 2HNO
2
(1)
2HNO
2
→?NO＋NO
2
＋H
2
O（2）
Step II: SiO
2
+ 6HF → H
2
SiF
6
+ 2H
2
O (3)
Control has most important property to the formula rate of
corrosive liquid to course of reaction.Corrosion rate is the highest when oxidation rate and rate of dissolution coupling.But the requirement to etching process is not the height of corrosion rate, but the controllability of corrosion rate.Aborning, adopt the higher corrosive liquid of nitric acid content usually.
If HF content is more in the corrosive liquid, then the oxidated reaction of corrosion process is controlled
.Because oxidation reaction is relatively responsive to silicon chip crystal orientation, doping content and crystal defect, so the silicon chip surface corrosion rate is uneven in the more corrosive liquid of HF content, the silicon slice corrosion rough surface also has pit; Angle and rib become sharply (two surperficial angles are less than 90 0), and the concentration of HNO3 approximately increases at 25% o'clock, and it is matt that silicon face becomes; Angle and rib are square; The concentration of HNO3 surpasses at 35% o'clock, and corrosion surface is minute surface, and angle and rib become circular-arc.If HNO3 content is more in the corrosive liquid, then corrosion process receives the restriction of reaction product rate of dissolution.Reaction product leaves silicon chip surface and carries out the liquid phase boundary layer that corrosive liquid must pass silicon chip surface, and the influence of boundary layer thickness liquid body convection velocity.Therefore, if with the higher acid etching solution of HNO3 content, can stir the control corrosion rate through ultrasonic or corrosive liquid.
are ultrasonic can accelerate material Transfer speed with stirring, and makes reactant in time be transported to the surface of solids product is in time left, and helps the carrying out that reacts.In corrosion process, tend at the erosional surface bubbing, hinder reaction to carry out, and make local overheating.For this reason, can adopt ultrasonic and stir process to accelerate gas and separate out, to improve the corrosion surface quality.Ultrasonic and stirring can also change the property according to qualifications of corrosive liquid.
corrosion temperature is high more, and corrosion rate is fast more, and is lowlyer fixed corrosion temperature in order to improve the corrosion surface quality.
The effect that
buffering acid solution not only has buffered etch speed, and as the interfacial agent that improves the humidifying degree of silicon chip surface, good humidifying condition can promote evenly to avoid silicon chip surface irregular corrosion structure to occur.Acetic acid (CH 3 COOH) and phosphoric acid (H 3 PO 4 ) be the buffering acid solution that the most generally is used, wherein CH 3 COOH has higher vapour pressure, so the concentration in corrosive liquid is unstable.Phosphoric acid H 3 PO 4 Though can improve the reflectance of silicon chip surface, can reduce corrosion rate.
) alkaline corrosion
silicon chip corrosion process in alkaline corrosion liquid is the reaction control procedure; Reaction speed depends on surperficial dangling bonds density; Thereby relevant with the crystal orientation, alkaline corrosion is anisotropic process, that is to say that corrosion rate is relevant with crystallization direction.This is because (111) surface has less free key, so be difficult for being fallen by the OH-corrosion reaction than (100) or (110).The most frequently used chemicals of alkaline corrosion is KOH or NaOH, and the reaction mechanism of corrosion can be written as
Si＋2KOH＋H
2
O?→?K
2
SiO
3
＋2H
2
After
common corrosion rate is increased to a maximum with KOH concentration, can be along with the further increase of concentration reduces on the contrary.Higher KOH concentration, more or less freely on control erosion removal amount.Usually, the high temperature that heals, silicon chip surface can not left over spot more, but causes the chance of metallic pollution to increase on the contrary, and alkaline corrosion speed is also relevant with the mechanical damage of silicon chip surface, in case after affected layer was accomplished removal, it is slower that corrosion rate can become.
Silicon chip behind
alkaline corrosion must reach certain surface characteristic equally.Generally speaking, the roughness ratio sour corrosion silicon chip of alkaline corrosion silicon chip has roughness big, so silicon chip surface is easier to adsorb some unnecessary particulates.
The characteristic of
table two pair sour corrosion and alkaline corrosion compares; Can know by table two; Alkaline corrosion is superior to sour corrosion with regard to surface flatness, cost and environmental protection, but the surface nature (surface roughness and corrosion depth) after the corrosion is still undesirable.
The comparison of acid corrosion of table two and alkaline corrosion
In actual development process, the table top moulding is undertaken by the order of first acid corrosion, back caustic corrosion
.Utilize the acid corrosion isotropism, the good chip of design angle machine moulding is pressed in corrosion, simultaneously, cooperates with the ultrasonic vibration mode, disperses the bubble that the chip corrosion surface produces, and removes PN junction surface oxide layer and other ions and mechanical damage.When acid corrosion, accomplish moulding basically, after freezing, use the KOH of lower concentration to carry out the caustic corrosion of short time, removal is present in particulate and the contamination on the chip table.Though have etching anisotropy and the bigger problem of degree of making slightly, the adverse effect of carrying out the caustic corrosion of low concentration, short time for the table top on the acid corrosion modeling basics can be controlled in the small range.
The key technology of test aspect
have possessed the measuring technology platform of 1.5KW silicon transient voltage restraining diode at present; On this basis; Acquire partial test equipment, set up the technology platform of empty detection technique, product thermal resistance detection technique and the comprehensive electric parameters testing technology of the high-power silicon transient voltage restraining diode of a cover.
Claims (4)
1. transient voltage restraining diode; It is characterized in that: comprise the base (2) that is connected with lead-in wire (1); Base (2) is through copper sheet (3) and tube core (4) welding, and tube core (4) another side is provided with protection glue (8) through copper sheet (3) and lead (5) welding outside the tube core (4); Base (2) is provided with shell (6), is provided with insulating barrier (7) between shell (6) and the lead (5).
2. transient voltage restraining diode according to claim 1 is characterized in that: pyrometallurgy melting welding is adopted in said welding; Comprise the metallurgical melting welding of slicken solder between tube core (4) and the copper sheet (3); Laser welding between shell (6) and the base (2); Electric resistance welding between base (2) and lead-in wire (1) and copper sheet (3) and the lead (5); During pyrometallurgy melting welding, weld empty area be controlled at connect area 5% in, increase the contact area of junction to greatest extent, reduce to connect thermal resistance.
3. transient voltage restraining diode according to claim 2 is characterized in that: said tube core (4) is the regular hexagon that on chip, marks, and orthohexagonal thickness is 220 ± 10 μ m, and the diagonal angle length of side is 4.7～6.7mm; Said chip is on the dislocation-free single crystal silicon materials, to adopt long-time dark knot high-concentration dopant diffusion technology, and surface concentration is controlled at 10
21/ cm
3The PN junction of more than processing.
4. transient voltage restraining diode according to claim 3 is characterized in that: said PN junction is that diffusion N+ type layer is made PN junction on P type substrate, and diffusion P+ type layer is made ohm knot on P type substrate again, forms the N+PP+ structure; The structure of PN junction or diffusion N+ type layer is made ohm knot on N type substrate is made PN junction at N type substrate diffusion P+ type layer again, forms the P+NN+ structure.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258816A (en) * | 2013-05-10 | 2013-08-21 | 昆山东日半导体有限公司 | Semiconductor lightning stroke protection device |
| CN104637805A (en) * | 2013-11-13 | 2015-05-20 | 北大方正集团有限公司 | Method for processing devices |
| CN108122994A (en) * | 2017-12-20 | 2018-06-05 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of high-power ultra-low capacitance transient voltage suppressor diode |
| CN109244143A (en) * | 2018-10-31 | 2019-01-18 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of DO-13 type transient voltage suppressor diode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201438458U (en) * | 2009-08-21 | 2010-04-14 | 朝阳无线电元件有限责任公司 | Metal packaged transient voltage suppressor diode |
| CN201440417U (en) * | 2009-08-21 | 2010-04-21 | 朝阳无线电元件有限责任公司 | Transient voltage suppressor diode |
| CN101714759A (en) * | 2009-11-11 | 2010-05-26 | 上海长园维安微电子有限公司 | Low-capacitance bidirectional ESD protective device and preparation method thereof |
| CN201549505U (en) * | 2009-11-27 | 2010-08-11 | 中国振华集团永光电子有限公司 | Glass passivation packaging transient voltage suppression diode structure |
| CN201956357U (en) * | 2010-12-07 | 2011-08-31 | 中国振华集团永光电子有限公司 | Transient-voltage suppressing diode |
-
2010
- 2010-12-07 CN CN2010105751282A patent/CN102544112A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201438458U (en) * | 2009-08-21 | 2010-04-14 | 朝阳无线电元件有限责任公司 | Metal packaged transient voltage suppressor diode |
| CN201440417U (en) * | 2009-08-21 | 2010-04-21 | 朝阳无线电元件有限责任公司 | Transient voltage suppressor diode |
| CN101714759A (en) * | 2009-11-11 | 2010-05-26 | 上海长园维安微电子有限公司 | Low-capacitance bidirectional ESD protective device and preparation method thereof |
| CN201549505U (en) * | 2009-11-27 | 2010-08-11 | 中国振华集团永光电子有限公司 | Glass passivation packaging transient voltage suppression diode structure |
| CN201956357U (en) * | 2010-12-07 | 2011-08-31 | 中国振华集团永光电子有限公司 | Transient-voltage suppressing diode |
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| CN108122994A (en) * | 2017-12-20 | 2018-06-05 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of high-power ultra-low capacitance transient voltage suppressor diode |
| CN109244143A (en) * | 2018-10-31 | 2019-01-18 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of DO-13 type transient voltage suppressor diode |
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