CN201956357U - Transient-voltage suppressing diode - Google Patents
Transient-voltage suppressing diode Download PDFInfo
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- CN201956357U CN201956357U CN201020644013XU CN201020644013U CN201956357U CN 201956357 U CN201956357 U CN 201956357U CN 201020644013X U CN201020644013X U CN 201020644013XU CN 201020644013 U CN201020644013 U CN 201020644013U CN 201956357 U CN201956357 U CN 201956357U
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Abstract
The utility model discloses a transient-voltage suppressing diode, which is characterized by comprising a pipe seat (2), wherein the pipe seat (2) is connected with a lead (1), the pipe seat (2) is welded with a pipe core (4) through a copper sheet (3), the other surface of the pipe core (4) is welded with an inner lead (5) through the copper sheet (3), and protective glue is arranged outside the pipe core (4); and a pipe shell (6) is arranged on the pipe seat (2), and an insulating layer (7) is arranged between the pipe shell (6) and the inner lead (5). Through the transient-voltage suppressing diode, the contradiction among the transient pulse power, the reverse leakage current and the reverse breakdown voltage of a product is solved, and the production and use requirements are met. Through the improvement of a key structure, the product has the characteristics of reasonable structural design, stable process, large transient pulse power, small reverse leakage current, high reliability and the like.
Description
Technical field
The utility model relates to a kind of transient voltage and suppresses diode, belongs to the semiconductor diode technical field.
Background technology
It is a kind of particular diode that grows up on the basis of voltage-stabiliser tube that transient voltage suppresses diode, is a kind of dynamical circuit brake.Have advantages such as volume is little, response is fast, transient absorption power is big, noiseless.Along with Aeronautics and Astronautics is in recent years had higher requirement to the transient power that transient voltage suppresses diode, present 1.5KW silicon transient voltage suppresses the diode series of products and can not meet the demands far away.Need to develop the bigger silicon transient voltage of transient power for this reason and suppress diode.
Summary of the invention
The purpose of this utility model is to provide a kind of transient voltage to suppress diode, be that the transient voltage of 3KW and 5KW suppresses diode and satisfies Aeronautics and Astronautics suppresses the transient power of diode to transient voltage specific (special) requirements with the transient power, thereby satisfy the demand of producing and using, overcome the deficiencies in the prior art.
The technical solution of the utility model is achieved in that a kind of transient voltage of the present utility model suppresses diode and comprises the base that is connected with lead-in wire, and base is through copper sheet and tube core welding, and the tube core another side is through copper sheet and lead welding, and tube core is provided with protection glue outward; Base is provided with shell, is provided with insulating barrier between shell and the lead.
Aforesaid transient voltage suppresses in the diode, and pyrometallurgy melting welding is adopted in described welding; Comprise the metallurgical melting welding of slicken solder between tube core and the copper sheet; Laser welding between shell and the base; Electric resistance welding between base and lead-in wire and copper sheet and the lead; During pyrometallurgy melting welding, weld empty area be controlled at connect area 5% in, increase the contact area of junction to greatest extent, reduce to connect thermal resistance.
Aforesaid transient voltage suppresses in the diode, and described tube core is the regular hexagon that marks on chip, and orthohexagonal thickness is 220 ± 10 μ m, and the diagonal angle length of side is 4.7～6.7mm; Described chip is to adopt long-time dark knot high-concentration dopant diffusion technology and surface concentration 10 on the dislocation-free single crystal silicon materials
21/ cm
3The above PN junction of Xing Chenging.
Aforesaid transient voltage suppresses in the diode, and described PN junction is the PN junction of diffusion N+ type layer on P type substrate, spreads the N+PP+ structure that ohm of P+ type layer knot is arranged and form simultaneously again on P type substrate; The structure of PN junction or on N type substrate ohm knot of diffusion N+ type layer, make PN junction and the P+NN+ structure that forms at N type substrate diffusion P+ type layer more simultaneously.
Compared with prior art, the transient power that existing transient voltage suppresses diode is less, can not satisfy the more and more higher requirement of electronic product.The utility model has solved the contradiction between product transient pulse power, reverse leakage current, the reverse breakdown voltage, has satisfied the demand of producing and using.Technology tackling key problem by critical process makes characteristics such as product has reasonable in design, process stabilizing, transient pulse power is big, reverse leakage current is little, reliability height.
The utility model adopts long-time dark knot high-concentration dopant diffusion technology, and surface concentration is controlled at 10
21/ cm
3The PN junction of more than making.For effect deep, the shallow junction diffusion, carried out contrast test, below be 5KP200 product testing result: (extract 3 after the diffusion respectively and get survey voltage ready, get the position ready as shown in Figure 5, result of the test is as shown in Table 1.
Table one, dark, shallow junction diffusion contrast test record
Adopt the puncture voltage consistency of dark knot high concentration diffusion technology tube core obviously to be better than adopting the tube core of shallow junction diffusion technology production as can be seen from the above table, thereby guaranteed the reliability of device.
Description of drawings
Fig. 1 is an encapsulating structure schematic diagram of the present utility model:
Fig. 2 is the chip structure schematic diagram of making of P type substrate;
Fig. 3 is the chip structure schematic diagram of making of N type substrate;
When Fig. 4 is welding, produce and the cavity position schematic diagram;
Fig. 5 is when making dark, shallow junction diffusion effect, the location drawing of getting ready on chip.
Being labeled as in the accompanying drawing: 1-lead-in wire, the 2-base, the 3-copper sheet, the 4-tube core, the 5-lead, the 6-shell, the 7-insulating barrier, 8-protects glue.
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples, but not as to any restriction of the present utility model.
Embodiment of the present utility model: encapsulating structure schematic diagram of the present utility model as shown in Figure 1, a kind of transient voltage of the present utility model suppresses diode, comprise and lead-in wire 1 base that is connected 2, base 2 is through copper sheet 3 and tube core 4 welding, tube core 4 another sides are through copper sheet 3 and lead 5 welding, and tube core 4 outer being provided with are protected glue 8; Base 2 is provided with shell 6, is provided with insulating barrier 7 between shell 6 and the lead 5; Pyrometallurgy melting welding is adopted in described welding; Comprise the metallurgical melting welding of slicken solder between tube core 4 and the copper sheet 3; Laser welding between shell 6 and the base 2; Electric resistance welding between base 2 and lead-in wire 1 and copper sheet 3 and the lead 5; During pyrometallurgy melting welding, weld empty area be controlled at connect area 5% in, increase the contact area of junction to greatest extent, reduce to connect thermal resistance.Described tube core 4 is the regular hexagons that mark on chip, and orthohexagonal thickness is 220 ± 10 μ m, and the diagonal angle length of side is 4.7～6.7mm; Described chip is to adopt long-time dark knot high-concentration dopant diffusion technology on the dislocation-free single crystal silicon materials, and surface concentration is controlled at 10
21/ cm
3The PN junction of more than making; Described PN junction is that diffusion N+ type layer is made PN junction on P type substrate, and diffusion P+ type layer is made ohm knot on P type substrate again, forms the N+PP+ structure; The structure of PN junction or diffusion N+ type layer is made ohm knot on N type substrate is made PN junction at N type substrate diffusion P+ type layer again, forms the P+NN+ structure.
Specific implementation process is as follows:
Design aspect at chip.
For transient suppression device, and do not require that it works long hours at high-power state, and only require an instantaneous state and can absorb a big power, therefore in design, will consider the problem of instantaneous high-power absorption emphatically.And the absorption of transient pulse power and transient thermal resistance are closely related.Thickness and the volume of reasonably choosing tube core can reduce transient thermal resistance, use for reference the making experience of similar device, the utility model is diagonal angle length of side 4.7mm regular hexagon, thickness 220 ± 10 μ m with 3KP series of products die design, is diagonal angle length of side 6.7mm regular hexagon, thickness 220 ± 10 μ m with 5KP series of products die design.
Prepare PN junction with diffusion method, when selecting P type backing material for use, at first diffusion N+ type layer is made PN junction on P type substrate, spreads P+ type layer again and makes ohm knot, forms the N+PP+ structure.
When selecting N type backing material for use, at first diffusion N+ type layer is made ohm knot on N type substrate, spreads P+ type layer again and makes PN junction, forms the P+NN+ structure.
When product structure design, remove the part selection and take into full account hot coupling, heat conduction, thermal capacity problem, also consider the design of entire product mechanical strength emphatically.Our factory has possessed Element Design technology and the production technology that the high-power silicon transient voltage of 1.5KW series suppresses diode, has accumulated a large amount of experiences and basis, and sufficient technique guarantee is arranged.
The connection of all material all is to adopt pyrometallurgy melting welding to fire to form in the product component; Chip is connected the metallurgical melting welding of use slicken solder with electrode; Shell and base adopt laser welding; Shell is connected the employing electric resistance welding with lead.All these technologies all suppress the consistent of diode with the high-power silicon transient voltage of 1.5KW series, through long-term practice test, proves and can satisfy fully that the device mechanical strength designs.
When thermal design,, therefore in design, must consider following three problems: 1, the heat absorption of device generation because high-power transient voltage inhibition diode will produce a large amount of heat dissipations when work; 2, whether the heat of tube core generation evenly distributes; 3, the coupling of the heat between the device inside.
The radiating mode of device is mainly heat conduction, and the quality of heat radiation is by the size decision of thermal resistance.Therefore, consider thermal resistance size on the heat pathway-be silicon chip and base.The characteristics that suppress diode at transient voltage, though the transient pulse power of these two serial type spectrum products is all very big, but it is instantaneous, shorter by the time that the electric current of product is very big but lasting, device when work tube core moment can produce very big heat, heat must be absorbed by the electrode on tube core two sides fast, must consider emphatically during this design.
From the transient thermal resistance formula
As can be known, after material is determined, thermal time constant τ increases, and transient thermal resistance RTS just reduces, and the absorbent energy of device work time institute is corresponding just to be increased, that is to say, its transient absorption power height, and very crucial from the selection of thermal time constant formula visible material, increase material thickness W, select specific heat CP and the big material of density p can reduce transient thermal resistance RTS greatly, make device can bear big transient pulse power.
Suppress diode for high-power silicon transient voltage, only depend on silicon die, can not satisfy the absorption that transient voltage suppresses the instantaneous macro-energy of diode pair far away, for this reason, must increase the thermal time constant τ of its device inside structure, consider that copper has enough thermal capacity, good heat-conductive characteristic and the feasibility on processing technology, so adopt copper as the material that improves thermal time constant τ, to satisfy instantaneous high-octane impact.
This series of products are carried out GJB33A-97 " semi-conductor discrete device general specification ", and the quality assurance grade is the general army of JP(), the special army of JT() and the super special army of JCT() Three Estate.We are that storage life designed over 20 years according to 20 years useful life, correspondingly in encapsulating structure, process implementing are to consider.This product adopts metallic packaging structure, has that volume is little, in light weight, high reliability features.Adopt this kind encapsulation, can satisfy the electrical quantity index request (particularly transient pulse peak power) of device fully, and the examination requirement of mechanical stress, environmental test accordingly.The measure of the following aspects is arranged in manufacture process:
1), adopt copper product to do electrode slice, solved the problem of device inside heat conduction, heat coupling;
2), select suitable sintering temperature and protective gas during sintering, soak into well to guarantee tube core and base.By improving technology, eliminated the cavity between tube core, scolder, the base, guarantee that tube core and base bonding is good, increased the contact area between tube core and the base to greatest extent;
3), before the product encapsulation, must and adopt ladder heating-cooling furnace drying method through strict clean, the steam and the removable particle of expeling surface adsorption.Find out the parameter of laser boxing process lowest optimization by experiment, controlled device air tightness and moisture content preferably;
4), for this kind encapsulating structure, adopt the laser sealing technique, thoroughly solved the problem of device fifth wheel.
The quality of chip quality directly has influence on the reliability of device, because the inhomogeneous or structure and the defective workmanship of material can cause the operating current concentration of local, promptly heat can not evenly distribute on tube core, forms focus.For high-power, high-current device, hot spot-effect is more outstanding.For addressing this problem, we mainly carry out the work of two aspects, and first: adopt the dislocation-free single crystal silicon materials; Second: adopt long-time dark knot high-concentration dopant diffusion technology, surface concentration is controlled at more than the 1021/cm3.The current concentration that adopts the dislocation-free single crystal silicon materials can avoid the material self-defect to cause.Adopt long-time dark knot high-concentration dopant diffusion technology with respect to short time shallow junction diffusion technology can obtain defective still less, more smooth PN junction, this is owing to can introduce defective owing to reasons such as impurity and thermal stress are inevitable in tube core in the chip production process, these defectives mainly concentrate on the zone, top layer of chip, and depth-diffusion process can be avoided the more zone, top layer of defective; Secondly, the puncture voltage consistency of depth-diffusion process is higher, this is owing to the resistivity of the selected substrate silicon material of depth-diffusion process is lower, and along with the reduction of the substrate silicon resistivity of material of choosing, each regional resistivity consistency is higher on its silicon chip, thereby guaranteed the smooth of diffusion back PN junction on material, when making device work, electric current can flow through whole tube core more uniformly.
Welding technology.The reduction thermal resistance that freezes reduces the cavity.The purpose that freezes is under protective gas, by heat, tube core and base is welded together, and forms good Ohmic contact, is the critical process in the device fabrication processes.The quality of its technology controlling and process is directly connected to the antisurge ability of device, is exactly the transient pulse power that device can bear.When this just required to freeze, between tube core and the copper sheet, bonding was firm between copper sheet and the base, and it is smooth to be stained with profit, eliminates the slit of freezing, and reduces the cavity, guarantees to greatest extent to reduce thermal resistance by chip real estate, in time the heat absorption that tube core is produced.Thermal resistance is the parameter that characterizes semiconductor device heat-sinking capability size, is limiting under the semiconductor junction temperature, and the dissipation power that device can bear is determined by thermal resistance.For big electric current, large power semiconductor device thermal resistance is unusual important parameters.Thermal resistance comprises with the lower part: the thermal resistance of (1) tube core; (2) thermal resistance of the tube core and the shell Contact welding bed of material; (3) thermal resistance of shell itself.Generally speaking, the thermal resistance of tube core and shell itself is determined by manufacturing materials and manufacture craft, and is constant substantially when assembling at the rear portion, determined and the thermal resistance of the tube core and the shell Contact welding bed of material is a processing quality by the operation that freezes.
The quality of welding technology effect depends on infiltration degree, i.e. the scolder of fusion is in the diffuses flow situation of face of weld.In the process of freezing, have a large amount of gas and produce, the gas that the solder flux in the scolder produces when volatilizing the gas that produces, the air of wrapping up in band when shelving and solder fusing.If these gases can not emit, will be present in the solder layer of fusing, influence the diffuses flow of scolder at face of weld, when solder cools, just formed cavity (also have person for bubble).As shown in Figure 2.The category-A cavity can make by the current unevenness of chip and spare among the figure, forms easily local " hot spot "; Category-B and C class cavity have reduced the capacity of heat transmission of solder layer.
The existence in cavity makes tube core and base effectively be stained with the minimizing of profit area, when product through high temperature service life, temperature cycles, power after the screening test such as seasoned, the thermal stress that produces because the thermal coefficient of expansion of chip, base and solder layer is different, can quicken the thermal fatigue failure of device, gently then thermal resistance increases, heavy then crackle appears in solder layer, had a strong impact on the q﹠r of product.As seen, how important thermal resistance is for big electric current, large power semiconductor device, reduce thermal resistance, just must reduce the cavity.Its tube core of the existing 1.5KW silicon transient voltage inhibition of our factory diode welds empty area and is controlled in 5%, for the present state of arts of our factory, resolve 3KW, 5KW silicon transient voltage and suppress the diode large tracts of land tube core empty problem that freezes, tube core must be welded empty area and be controlled in 5% equally.
Suppress diode for high-power transient voltage and must reduce the cavity, reduce the thermal resistance that freezes, the quality quality of freeze used scolder, scaling powder is extremely important for the large tracts of land welding procedure, in process implementing, needs high scolder of credit rating and scaling powder.
Further optimize welding technology; adopt the suitable protective gas that freezes (purity of gas, gas flow size etc.); freeze temperature, freeze the time etc.; guarantee to eliminate the cavity between tube core, scolder, the base; guarantee that tube core and base bonding is good, increased the contact area between tube core and the base to greatest extent.
Table top moulding, etching process.Suppress our desirable chip of diode for high-power transient voltage and be shaped to the orthogonal rake moulding, PN junction is punctured betide as far as possible in the body, improve device and bear transient pulse power capability and reliability.
When development, we change traditional chip ultrasonic cut technology into scribing process.This is because ultrasonic cut can cause tube core to collapse defectives such as limit, unfilled corner, crackle, influences rate of finished products.Can significantly reduce this type of generation of defects after adopting scribing process.
Adopt the way of corrosion, remove PN junction surface oxide layer and other ions and mechanical damage, weaken surface field, PN junction is punctured betide in the body, obtain desirable table top moulding.The quality of moulding is directly connected to device reliability and antisurge ability, this adopts which kind of etching process (as the prescription of corrosion, the temperature of corrosion, time of corrosion or the like), could control corrosion rate preferably, make chip table smooth, smooth, obtaining desirable table top moulding is key process technology.
Silicon chip surface forms one deck affected layer and pollution because of machining stress, and this layer affected layer must be removed.Normally adopt the mode of chemical corrosion.And according to the difference of employed corrosive liquid, chemical corrosion is divided into two kinds of sour corrosion and alkaline corrosions again.
1) sour corrosion
Sour corrosion is isotropic process, and each crystal orientation of silicon wafer is subjected to uniform chemical corrosion in other words, and acid etching solution commonly used is made up of nitric acid (HNO3), hydrofluoric acid (HF) and the buffering acid etc. of different proportionings.
The mechanism of the reaction of sour corrosion comprises two steps: at first, be to utilize HNO3 to come oxidized surface, shown in (1) and formula (2); Next the oxide that forms of silicon wafer surface can be become soluble complexes by the HF complexing and removes, as the formula (3).Therefore, HNO3 is a kind of oxidant, and HF then is a complexing agent.
Step I: Si+2HNO
3→ SiO
2+ 2HNO
2(1)
2HNO
2 →?NO＋NO
2 ＋H
2 O （2）
Step II: SiO
2+ 6HF → H
2SiF
6+ 2H
2O (3)
Control has most important property to the formula rate of corrosive liquid to course of reaction.Corrosion rate is the highest when oxidation rate and rate of dissolution coupling.But the requirement to etching process is not the height of corrosion rate, but the controllability of corrosion rate.Aborning, adopt the higher corrosive liquid of nitric acid content usually.
If HF content is more in the corrosive liquid, the then oxidated reaction control of corrosion process.Because oxidation reaction is relatively more responsive to silicon chip crystal orientation, doping content and crystal defect, so the silicon chip surface corrosion rate is uneven in the more corrosive liquid of HF content, the silicon slice corrosion rough surface also has pit, angle and rib become sharply (two surperficial angles are less than 90 0), and the concentration of HNO3 approximately increases at 25% o'clock, and it is matt that silicon face becomes, angle and rib are square, the concentration of HNO3 surpasses at 35% o'clock, and corrosion surface is minute surface, and angle and rib become circular-arc.If HNO3 content is more in the corrosive liquid, then corrosion process is subjected to the restriction of reaction product rate of dissolution.Reaction product leaves silicon chip surface and carries out the liquid phase boundary layer that corrosive liquid must pass silicon chip surface, and the influence of boundary layer thickness liquid body convection velocity.Therefore, if, can stir the control corrosion rate by ultrasonic or corrosive liquid with the higher acid etching solution of HNO3 content.
Ultrasonic and stirring can be accelerated material Transfer speed, makes reactant in time be transported to the surface of solids product is in time left, and helps the carrying out that reacts.In corrosion process, tend at the erosional surface bubbing, hinder reaction to carry out, and make local overheating.For this reason, can adopt ultrasonic and stir process to accelerate gas and separate out, to improve the corrosion surface quality.Ultrasonic and stirring can also change the property according to qualifications of corrosive liquid.
Corrosion temperature is high more, and corrosion rate is fast more, and is lowlyer fixed corrosion temperature in order to improve the corrosion surface quality.
The effect that the buffering acid solution not only has buffered etch speed, and as the interfacial agent that improves the humidifying degree of silicon chip surface, good humidifying condition can promote evenly to avoid silicon chip surface irregular corrosion structure to occur.Acetic acid (CH
3COOH) and phosphoric acid (H
3PO
4) be the buffering acid solution that the most generally is used, wherein CH
3COOH has higher vapour pressure, so the concentration in corrosive liquid is unstable.Phosphoric acid H
3PO
4Though can improve the reflectance of silicon chip surface, can reduce corrosion rate.
2) alkaline corrosion
The corrosion process of silicon chip in alkaline corrosion liquid is the reaction control procedure, and reaction speed depends on surperficial dangling bonds density, thereby relevant with the crystal orientation, and alkaline corrosion is anisotropic process, that is to say that corrosion rate is relevant with crystallization direction.This is because (111) surface has less free key, so be difficult for being fallen by the OH-corrosion reaction than (100) or (110).The most frequently used chemicals of alkaline corrosion is KOH or NaOH, and the reaction mechanism of corrosion can be written as
Si＋2KOH＋H
2 O?→?K
2 SiO
3 ＋2H
2
Usually after corrosion rate is increased to a maximum with KOH concentration, can be along with the further increase of concentration reduces on the contrary.Higher KOH concentration, more or less freely on control erosion removal amount.Usually, the high temperature that heals, silicon chip surface can not left over spot more, but causes the chance of metallic pollution to increase on the contrary, and alkaline corrosion speed is also relevant with the mechanical damage of silicon chip surface, in case after affected layer was finished removal, it is slower that corrosion rate can become.
Silicon chip behind the alkaline corrosion must reach certain surface characteristic equally.Generally speaking, the roughness ratio sour corrosion silicon chip of alkaline corrosion silicon chip has roughness big, so silicon chip surface is easier to adsorb some unnecessary particulates.
The characteristic of table two pair sour corrosion and alkaline corrosion compares, and as shown in Table 2, alkaline corrosion is better than sour corrosion with regard to surface flatness, cost and environmental protection, but the surface nature (surface roughness and corrosion depth) after the corrosion is still undesirable.
The comparison of acid corrosion of table two and alkaline corrosion
In actual development process, the table top moulding is undertaken by the order of first acid corrosion, back caustic corrosion.Utilize the acid corrosion isotropism, the good chip of design angle machine moulding is pressed in corrosion, simultaneously, cooperates in the ultrasonic vibration mode, disperses the bubble that the chip corrosion surface produces, and removes PN junction surface oxide layer and other ions and mechanical damage.When acid corrosion, finish moulding substantially, after freezing, use the KOH of lower concentration to carry out the caustic corrosion of short time, remove the particulate and the contamination that are present on the chip table.Though have etching anisotropy and the bigger problem of degree of making slightly, the adverse effect of carrying out the caustic corrosion of low concentration, short time for the table top on the acid corrosion modeling basics can be controlled in the small range.
The key technology of test aspect
Possessed at present the measuring technology platform that 1.5KW silicon transient voltage suppresses diode, on this basis, acquire partial test equipment, set up the technology platform of empty detection technique, product thermal resistance detection technique and the comprehensive electric parameters testing technology of the high-power silicon transient voltage inhibition of cover diode.
Claims (3)
1. a transient voltage suppresses diode, it is characterized in that: comprise the base (2) that is connected with lead-in wire (1), base (2) is through copper sheet (3) and tube core (4) welding, and tube core (4) another side is provided with protection glue (8) through copper sheet (3) and lead (5) welding outside the tube core (4); Base (2) is provided with shell (6), is provided with insulating barrier (7) between shell (6) and the lead (5).
2. transient voltage according to claim 1 suppresses diode, it is characterized in that: pyrometallurgy melting welding is adopted in described welding; Comprise the metallurgical melting welding of slicken solder between tube core (4) and the copper sheet (3); Laser welding between shell (6) and the base (2); Electric resistance welding between base (2) and lead-in wire (1) and copper sheet (3) and the lead (5); During pyrometallurgy melting welding, weld empty area be controlled at connect area 5% in, increase the contact area of junction to greatest extent, reduce to connect thermal resistance.
3. transient voltage according to claim 2 suppresses diode, and it is characterized in that: described tube core (4) is the regular hexagon that marks on chip, and orthohexagonal thickness is 220 ± 10 μ m, and the diagonal angle length of side is 4.7～6.7mm.
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| CN201020644013XU CN201956357U (en) | 2010-12-07 | 2010-12-07 | Transient-voltage suppressing diode |
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| CN201020644013XU CN201956357U (en) | 2010-12-07 | 2010-12-07 | Transient-voltage suppressing diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544112A (en) * | 2010-12-07 | 2012-07-04 | 中国振华集团永光电子有限公司 | Transient voltage suppression diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544112A (en) * | 2010-12-07 | 2012-07-04 | 中国振华集团永光电子有限公司 | Transient voltage suppression diode |
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| GR01 | Patent grant | ||
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| CX01 | Expiry of patent term |
Granted publication date: 20110831 |