CN220106498U

CN220106498U - Packaging structure of IGBT module

Info

Publication number: CN220106498U
Application number: CN202320842283.9U
Authority: CN
Inventors: 董志意; 王蕤
Original assignee: Nanruilianyan Semiconductor Co ltd
Current assignee: Nanruilianyan Semiconductor Co ltd
Priority date: 2023-04-17
Filing date: 2023-04-17
Publication date: 2023-11-28
Anticipated expiration: 2033-04-17

Abstract

The utility model provides a packaging structure of an IGBT module, which aims at the problems that the current domestic and foreign welding type IGBT module structure still comprises chips, welding flux, DBC and a plane substrate in a conventional mode from inside to outside, the chip thermal coupling is serious, the heat transfer path heat dissipation thermal coupling is also serious, and the heat dissipation effect of the whole module is poor in the whole packaging structure.

Description

Packaging structure of IGBT module

Technical Field

The utility model relates to the field of power semiconductors, in particular to a packaging structure of an IGBT module.

Background

The welding type IGBT module packaging structure comprises a chip, a bonding wire, primary solder, DBC, a power terminal, secondary solder, silica gel and a substrate, and is used for carrying out compromise layout on the chip and packaging. When the heat dissipation device is applied to an IGBT module converter, as the output power is increased, a large amount of heat is released from IGBT and FRD chips in the module in a short time, the generated heat is mainly dissipated from the chips, primary solder, DBC, secondary solder and a substrate in turn from inside to outside in a heat conduction mode through cooling liquid until the heat balance is achieved, but in the whole module of the IGBT, the heat dissipation effect of the chips to the substrate is affected by the layout of a plurality of chips and the heat resistance passage, and although the effect of the chips to the substrate is achieved to a certain extent, the heat dissipation effect of the planar substrate is still further improved aiming at the coupling heating effect of the parallel operation of a plurality of chips.

Disclosure of Invention

The utility model aims to overcome the defects in the prior art and provides a packaging structure of an IGBT module.

In order to solve the problems in the prior art, the utility model discloses a packaging structure of an IGBT module, which comprises an IGBT substrate, wherein the IGBT substrate is provided with an upper half-bridge micro-groove structure, a lower half-bridge micro-groove structure and a concave groove, the upper half-bridge micro-groove structure and the lower half-bridge micro-groove structure are respectively provided with a fixed IGBT chip and an FRD chip, the upper half-bridge micro-groove structure and the lower half-bridge micro-groove structure are used for forming heat dissipation for the IGBT chip and the FRD chip, the concave groove is arranged at the periphery of the upper half-bridge micro-groove structure and the lower half-bridge micro-groove structure, and the concave groove is used for embedding a radiator, so that cooling liquid of the radiator cools the IGBT chip and the FRD chip.

Further, the upper half-bridge micro-groove structure and the lower half-bridge micro-groove structure comprise a plurality of cylindrical grooves.

Further, the plurality of cylindrical grooves are distributed in a rectangular shape.

Further, the concave groove is rectangular, and all the upper half-bridge micro-groove structures and the lower half-bridge micro-groove structures are framed in the rectangle.

Further, the number of the upper half-bridge micro-groove structures and the lower half-bridge micro-groove structures is 3.

Further, an IGBT chip and an FRD chip are respectively arranged on each upper half-bridge micro-groove structure and each lower half-bridge micro-groove structure.

The utility model has the beneficial effects that:

on the basis of not changing the size and thickness of the IGBT module substrate, the micro-groove cylindrical pressure fit connection technology and the concave embedded sealing connection technology are carried out on the substrate of the welded IGBT module, and by the technology, when a power cycle experiment or practical application is carried out on the IGBT module in a converter, the thermal coupling path between chips can be changed, the heat dissipation capacity of the IGBT module is changed, in addition, the whole module is embedded into a radiator through the concave embedded sealing connection technology and sealed, and then heat in the IGBT module is taken away through cooling liquid acceleration, so that the purpose of optimizing the heat dissipation of the IGBT module is achieved.

Drawings

Fig. 1 is a schematic diagram of a front-side chip package structure of an IGBT module in the prior art;

FIG. 2 is a schematic diagram of a back layout of an IGBT module according to the present utility model;

FIG. 3 is a schematic diagram of the corresponding micro-groove structures of an IGBT chip and an FRD chip in the utility model;

fig. 4 is a schematic diagram of an IGBT substrate structure according to the present utility model.

Description of the embodiments

The utility model is further described below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present utility model, and are not intended to limit the scope of the present utility model.

As shown in fig. 1, in the IGBT module in the prior art, the front main part includes an IGBT chip and an FRD chip, the IGBT chip is disposed at the positions shown by 1 and 12, the FRD chip is disposed at the positions shown by 2 and 13, one side is provided with a first dc terminal 3 and a second dc terminal 4, the other side is provided with an ac terminal 6, the middle parts are respectively an upper half-bridge DBC board and a lower half-bridge DBC board 5, when the IGBT module works normally, heat emitted by the IGBT chip and the FRD chip is dissipated through the chip itself, solder, a DBC ceramic copper-clad substrate and a copper substrate, this way is easy to thermally couple the knife chip and causes poor heat dissipation effect, based on this, the micro-groove Pressfit and concave embedded sealing connection technology is performed on the substrates of the welded IGBT module under the condition that the upper half-bridge and the lower half-bridge do not change the basic size and thickness;

as shown in fig. 2, 3 and 4, micro-groove press fit processing is performed on the substrate corresponding to the IGBT chip and the FRD chip, an upper half-bridge micro-groove structure 7 and a lower half-bridge micro-groove structure 8 are respectively generated, and the IGBT chip 10 and the FRD chip 11 are respectively arranged on the upper half-bridge micro-groove structure 7 and the lower half-bridge micro-groove structure 8, so that the heat dissipation channel and the heat resistance of the chip are changed, and the purpose of heat dissipation is achieved; the upper half-bridge micro-groove structure 7 and the lower half-bridge micro-groove structure 8 are composed of a plurality of cylindrical grooves, and the plurality of cylindrical grooves form a rectangular structure which is adaptive to the shape of the chip.

In addition, in order to strengthen the tight connection between the module and the radiator and achieve the effect of strengthening heat dissipation, the concave embedding sealing connection technology is performed on the substrate, as shown by concave grooves 9 in fig. 2, 3 and 4, the IGBT chip 10, the FRD chip 11 and the external radiator in the IGBT module are embedded together through the concave grooves 9 and are waterproof sealed, and cooling liquid is used in the radiator, so that the heat dissipation capacity of the chip in the IGBT module is strengthened, the thermal safety of the whole module is improved, and the service life of the IGBT module is further prolonged.

Under reasonable layout of welding type IGBT module chips, DBCs and bonding tradeoffs, microminiaturization pressure fit connection and groove embedding sealing technology treatment are carried out on corresponding substrates under the chips, under the condition of water cooling heat dissipation, heat dissipation channels and heat resistance of the chips are changed, heat dissipation effects of the chips can be further increased, power density of the chips can be improved through the technology under the condition that the highest junction temperature of the chips is not exceeded, and when the chips are used in a converter, power density of the whole converter unit can be provided, so that heat failure rate of the IGBT module is reduced, service life of the whole IGBT module is prolonged, and robustness of the IGBT module is also greatly enhanced.

It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Also in the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model. And in the drawings of the present utility model, the filling patterns are only for distinguishing the layers, and are not limited in any way.

Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The utility model provides a packaging structure of IGBT module, its characterized in that, includes the IGBT base plate, the IGBT base plate is equipped with first half-bridge micro-groove structure (7), second half-bridge micro-groove structure (8) and concave groove (9), set up fixed IGBT chip (10) and FRD chip (11) on first half-bridge micro-groove structure (7) and second half-bridge micro-groove structure (8) respectively, first half-bridge micro-groove structure (7) and second half-bridge micro-groove structure (8) are used for forming the heat dissipation to IGBT chip (10) and FRD chip (11), the periphery of first half-bridge micro-groove structure (7) and second half-bridge micro-groove structure (8) is located in concave groove (9), concave groove (9) are used for the gomphosis radiator, make the coolant liquid of radiator cool off IGBT chip (10) and FRD chip (11).

2. The IGBT module packaging structure according to claim 1, characterized in that the upper half-bridge micro-trench structure (7) and the lower half-bridge micro-trench structure (8) comprise a number of cylindrical grooves.

3. The IGBT module packaging structure of claim 2 wherein the plurality of pillar shaped grooves are rectangular in distribution.

4. The IGBT module packaging structure according to claim 1, characterized in that the concave groove (9) is rectangular, framing all upper half-bridge micro-groove structures (7) and lower half-bridge micro-groove structures (8) within the rectangle.

5. The IGBT module packaging structure according to claim 1, characterized in that the number of upper half-bridge micro-trench structures (7) and lower half-bridge micro-trench structures (8) is 3.

6. The packaging structure of the IGBT module according to claim 1, characterized in that one IGBT chip (10) and one FRD chip (11) are provided on each of the upper half-bridge micro-groove structure (7) and the lower half-bridge micro-groove structure (8), respectively.