CN218957707U - Packaging structure of photovoltaic bypass diode - Google Patents
Packaging structure of photovoltaic bypass diode Download PDFInfo
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- CN218957707U CN218957707U CN202223405506.XU CN202223405506U CN218957707U CN 218957707 U CN218957707 U CN 218957707U CN 202223405506 U CN202223405506 U CN 202223405506U CN 218957707 U CN218957707 U CN 218957707U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model relates to a packaging structure of a photovoltaic bypass diode, and belongs to the technical field of chip packaging. The LED comprises gold wires, a diode chip, an anode lead, a cathode lead, a copper base plate and transparent injection molding plastic, wherein the anode lead, the cathode lead and the diode chip are all connected with the copper base plate, one end of the gold wires is connected with one end of the anode lead, and the other end of the gold wiresOne end of a cathode lead is connected with an N electrode of the diode chip, the transparent injection molding plastic is symmetrically injected on the periphery of a gold thread, the diode chip, an anode lead, a cathode lead and the copper bottom plate by taking the copper bottom plate as a center, and the other end of the anode lead and the other end of the cathode lead extend to the outside of the transparent injection molding plastic 。 The method can rapidly locate the faults of the photovoltaic bypass diode caused by abnormal connection of the internal components, and the fault analysis process of the photovoltaic bypass diode is time-saving and labor-saving, and the fault analysis efficiency is high.
Description
Technical Field
The utility model relates to the technical field of chip packaging, in particular to a packaging structure of a photovoltaic bypass diode.
Background
With the development of new energy technology, photovoltaic modules are gradually applied to various industries. The power generation performance of the photovoltaic module determines the final trend of photovoltaic power generation, so that it is important to ensure the power generation performance of the photovoltaic module.
In the production and use of the photovoltaic module, the photovoltaic module is frequently low in generating capacity. There are many reasons for the lower power generation of the photovoltaic module, and one reason is that the photovoltaic bypass diode is abnormal. At present, the packaging of the photovoltaic bypass diode adopts a mode which is unfavorable for carrying out abnormality analysis on the photovoltaic bypass diode, so that a series of complex detection analysis is needed, the fault analysis of the photovoltaic bypass diode is time-consuming and labor-consuming, and the efficiency is low.
Therefore, it is desirable to provide a novel packaging structure of the photovoltaic bypass diode, so as to quickly locate the abnormality cause of the photovoltaic bypass diode.
Disclosure of Invention
In order to solve the technical problems, the utility model provides a packaging structure of a photovoltaic bypass diode.
The technical scheme of the utility model is as follows:
the utility model provides a packaging structure of photovoltaic bypass diode, its includes gold thread, diode chip, anodal lead wire, negative pole lead wire, copper bottom plate and transparent plastic injection, anodal lead wire, negative pole lead wire and diode chip all are connected with the copper bottom plate, and gold thread one end is connected with anodal lead wire one end, and the gold thread other end is connected with the P electrode of diode chip, and negative pole lead wire one end is connected with the N electrode of diode chip, and transparent plastic injection uses the copper bottom plate as central symmetry to mould plastics at gold thread, diode chip, anodal lead wire, negative pole lead wire and copper bottom plate periphery and anodal lead wire other end and negative pole lead wire other end to transparent plastic injection outside.
Optionally, the transparent injection molding material is formed by combining two symmetrical quadrangular prisms, wherein the top surface and the bottom surface of each quadrangular prism are rectangular, and the area of the top surface is smaller than that of the bottom surface.
Optionally, the positive electrode lead, the negative electrode lead and the diode chip are adhered to the copper base plate through solder paste.
Optionally, the transparent plastic injection material is transparent resin.
All the above optional technical solutions can be arbitrarily combined, and the detailed description of the structures after one-to-one combination is omitted.
By means of the scheme, the beneficial effects of the utility model are as follows:
through setting up transparent plastic injection molding and regard copper bottom plate as central symmetry at gold thread, diode chip, anodal lead wire, negative pole lead wire and copper bottom plate periphery, can observe the inside gold thread of transparent plastic injection molding, diode chip, anodal lead wire, negative pole lead wire and copper bottom plate between the relation of connection, be convenient for directly perceivedly see some photovoltaic bypass diode trouble that leads to because of the relation of connection is unusual, consequently can fix a position the trouble that photovoltaic bypass diode leads to because of the internal part connection is unusual fast, the fault analysis process of photovoltaic bypass diode is labour saving and time saving relatively, fault analysis efficiency is higher.
The foregoing description is only an overview of the present utility model, and is intended to provide a better understanding of the present utility model, as it is embodied in the following description, with reference to the preferred embodiments of the present utility model and the accompanying drawings.
Drawings
Fig. 1 is a schematic structural view of the present utility model.
Detailed Description
The following describes in further detail the embodiments of the present utility model with reference to the drawings and examples. The following examples are illustrative of the utility model and are not intended to limit the scope of the utility model.
As shown in fig. 1, the packaging structure of the photovoltaic bypass diode provided by the utility model comprises a gold wire 1, a diode chip 2, an anode lead 3-1, a cathode lead 3-2, a copper bottom plate 4 and a transparent plastic injection 5, wherein the anode lead 3-1, the cathode lead 3-2 and the diode chip 2 are all connected with the copper bottom plate 4, one end of the gold wire 1 is connected with one end of the anode lead 3-1, the other end of the gold wire 1 is connected with a P electrode of the diode chip 2, one end of the cathode lead 3-2 is connected with an N electrode of the diode chip 2, the transparent plastic injection 5 is symmetrically injection molded on the periphery of the gold wire 1, the diode chip 2, the anode lead 3-1, the cathode lead 3-2 and the copper bottom plate 4 by taking the copper bottom plate 4 as a center, and the other end of the anode lead 3-1 and the other end of the cathode lead 3-2 extend to the outside of the transparent plastic injection 5.
The present utility model is not particularly limited as to the specific constituent structure of the diode chip 2. For example, the diode chip 2 includes, in order from bottom to top, a substrate, a nucleation layer, a nitride buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, a P-type AlGaN layer, a P-type GaN layer, a P-type InGaN contact layer, a P-electrode electrically connected to the P-type InGaN contact layer, and an N-electrode electrically connected to the N-type GaN layer.
Wherein the diode chip 2 includes, but is not limited to, a schottky diode.
In forming the package structure of the present utility model, it is achieved by the steps of:
1) And (3) lead filling: bonding the positive electrode lead 3-1 and the negative electrode lead 3-2 with a copper base plate 4 by using solder paste, and connecting the electrodes of the diode chip 2 with the positive electrode lead 3-1 and the negative electrode lead 3-2 by using a gold wire 1;
2) Chip filling: bonding the diode chip 2 on the copper base plate 4 by using solder paste;
3) Placing the assembled gold wire 1, the assembled positive electrode lead 3-1, the assembled negative electrode lead 3-2, the assembled diode chip 2 and the assembled copper base plate 4 into a packaging mold for mold assembly;
4) The solder paste is melted through high-temperature welding, so that the bonding effect is achieved;
5) And (3) plastic packaging: injecting the transparent injection molding material 5 into a mold for packaging;
6) Curing: solidifying the packaged finished product;
7) Electroplating: the positive electrode lead 3-1 and the negative electrode lead 3-2 exposed from the transparent molding compound 5 are plated to prevent oxidation.
Specifically, when the utility model is connected to a photovoltaic module, after the transparent plastic injection 5 is clamped between bus bars corresponding to every two rows of battery strings of the photovoltaic module, the positive electrode lead 3-1 and the negative electrode lead 3-2 are respectively connected with the bus bars.
The transparent plastic 5 is adopted in the packaging process, so that the connection relation among the gold thread 1, the diode chip 2, the positive electrode lead 3-1, the negative electrode lead 3-2 and the copper base plate 4 in the transparent plastic 5 can be intuitively seen. When a fault occurs due to the disconnection of the anode lead 3-1 or the cathode lead 3-2 from the diode chip 2, and the disconnection of the gold wire 1 from the diode chip 2 or the anode lead 3-1, the fault of the diode chip 2, the anode lead 3-1 or the cathode lead 3-2 from the copper base plate 4 can be visually seen without complex detection and analysis of the cause of the fault. Therefore, the fault analysis method and the fault analysis device can rapidly position faults of the photovoltaic bypass diode caused by abnormal connection of internal components, the fault analysis of the photovoltaic bypass diode is time-saving and labor-saving, and the fault analysis efficiency is high.
Optionally, the transparent injection molding material 5 is formed by combining two symmetrical quadrangular prisms, wherein the top surface and the bottom surface of each quadrangular prism are rectangular, and the area of the top surface is smaller than that of the bottom surface. By setting the transparent plastic molding material 5 in the shape, the photovoltaic bypass diode is convenient to be placed in the middle of the bus bars corresponding to every two rows of battery strings when the photovoltaic bypass diode is installed on the photovoltaic module. Of course, the transparent molding material 5 may be provided in a cylindrical shape, a rectangular parallelepiped shape, or the like as required.
Optionally, the positive electrode lead 3-1, the negative electrode lead 3-2 and the diode chip 2 are adhered to the copper base plate 4 through solder paste, so that conductivity is ensured, and meanwhile, the positive electrode lead 3-1, the negative electrode lead 3-2 and the diode chip 2 are tightly connected with the copper base plate 4.
Optionally, the material of the transparent injection molding material 5 is transparent resin. When preparing transparent resin, the mixture of polyorganosiloxane containing vinyl and Si-OH group and epoxy resin is used as basic polymer, the polyorganosiloxane containing Si-H group is used as hydrosilylation cross-linking agent, platinum complex is used as hydrosilylation reaction catalyst, aluminate compound is used as reaction catalyst of Si-OH group and epoxy group in epoxy resin, and low-viscosity reactive epoxy compound is used as diluent. The utility model will not be described in detail with respect to the proportions of the components.
The above description is only of the preferred embodiments of the present utility model and is not intended to limit the present utility model, and it should be noted that it is possible for those skilled in the art to make several improvements and modifications without departing from the technical principle of the present utility model, and these improvements and modifications should also be regarded as the protection scope of the present utility model.
Claims (4)
1. The utility model provides a packaging structure of photovoltaic bypass diode, its characterized in that includes gold thread (1), diode chip (2), anodal lead wire (3-1), negative pole lead wire (3-2), copper bottom plate (4) and transparent notes plastic (5), anodal lead wire (3-1), negative pole lead wire (3-2) and diode chip (2) all are connected with copper bottom plate (4), gold thread (1) one end is connected with anodal lead wire (3-1) one end, gold thread (1) other end is connected with the P electrode of diode chip (2), negative pole lead wire (3-2) one end is connected with the N electrode of diode chip (2), transparent notes plastic (5) regard copper bottom plate (4) as central symmetry and mould plastics at gold thread (1), diode chip (2), anodal lead wire (3-1), negative pole lead wire (3-2) and copper bottom plate (4) periphery and anodal lead wire (3-1) other end and negative pole lead wire (3-2) other end extend to transparent notes plastic (5) outside.
2. The packaging structure of the photovoltaic bypass diode according to claim 1, characterized in that the transparent molding compound (5) is formed by combining two symmetrical quadrangular prisms, wherein the top surface and the bottom surface of each quadrangular prism are rectangular, and the area of the top surface is smaller than that of the bottom surface.
3. The packaging structure of the photovoltaic bypass diode according to claim 1, wherein the anode lead (3-1), the cathode lead (3-2) and the diode chip (2) are bonded with the copper base plate (4) through solder paste.
4. The packaging structure of a photovoltaic bypass diode according to claim 1, characterized in that the material of the transparent molding compound (5) is a transparent resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223405506.XU CN218957707U (en) | 2022-12-19 | 2022-12-19 | Packaging structure of photovoltaic bypass diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223405506.XU CN218957707U (en) | 2022-12-19 | 2022-12-19 | Packaging structure of photovoltaic bypass diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218957707U true CN218957707U (en) | 2023-05-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223405506.XU Active CN218957707U (en) | 2022-12-19 | 2022-12-19 | Packaging structure of photovoltaic bypass diode |
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| Country | Link |
|---|---|
| CN (1) | CN218957707U (en) |
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2022
- 2022-12-19 CN CN202223405506.XU patent/CN218957707U/en active Active
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