CN203895451U - Large power led packaging structure - Google Patents
Large power led packaging structure Download PDFInfo
- Publication number
- CN203895451U CN203895451U CN201420179285.5U CN201420179285U CN203895451U CN 203895451 U CN203895451 U CN 203895451U CN 201420179285 U CN201420179285 U CN 201420179285U CN 203895451 U CN203895451 U CN 203895451U
- Authority
- CN
- China
- Prior art keywords
- led
- copper base
- encapsulation structure
- power led
- led array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004806 packaging method and process Methods 0.000 title abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 34
- 239000010949 copper Substances 0.000 claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000741 silica gel Substances 0.000 claims abstract description 8
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 26
- 238000005538 encapsulation Methods 0.000 claims description 24
- 229910052709 silver Inorganic materials 0.000 claims description 24
- 239000004332 silver Substances 0.000 claims description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 13
- 241000218202 Coptis Species 0.000 claims description 6
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 6
- 239000004568 cement Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract 2
- 239000003292 glue Substances 0.000 abstract 1
- 239000000084 colloidal system Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011900 installation process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 150000003378 silver Chemical class 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model provides a large power LED packaging structure comprising a copper substrate, an anode wiring terminal, a cathode wiring terminal and a box dam frame, an LED array formed by a plurality of LED chips, and silica gel packaging the LED array; the LED array is connected with the anode wiring terminal and the cathode wiring terminal through the copper substrate; the box dam frame encloses to form a rectangular frame; a silvering layer is arranged in the rectangular frame; the LED array is fixed on the silvering layer through sliver glue; a distance between adjacent LED chips on the silvering layer is 0.70-0.80mm. The large power LED packaging structure mainly suitable for the large power LED packaging structure under 100W; the distance between adjacent LED chips on the silvering layer is 0.70-0.80mm; a surface temperature of the package silica gel body is controlled to be under 180 DEG C in a usage process after packaging.
Description
Technical field
The utility model relates to LED illumination encapsulating structure, especially relates to high-power LED encapsulation structure.
Background technology
In LED encapsulating structure, for power 100W with interior LED encapsulating structure in because too small, the LED chip of cradling function region area arrange and dispel the heat bad, silica gel colloid surface excess Temperature in too closely causing use procedure and cause other bad reactions such as dead lamp, the softer wire that easily weighs wounded in installation process of colloid due to traditional box dam frame causes dead lamp simultaneously, and the air-tightness of box dam frame is bad, hot spot is poor, affected useful life and the stability of high-powered LED lamp.
Utility model content
The purpose of this utility model is to solve the weak heat-dissipating of existing 100W to exist adjacent LED arrangements of chips too closely to cause in interior high-power LED encapsulation structure, silica gel colloid surface excess Temperature easily causes the shortcoming of the bad reactions such as dead lamp, provides a kind of 100W of being applicable to interior high-power LED encapsulation structure.
The technical scheme that the utility model solves its technical problem employing is: high-power LED encapsulation structure, comprise copper base, be fixedly arranged on positive terminal on described copper base, negative terminals and box dam frame, the silica gel of being located at the LED array being formed by several LED chips in described box dam frame and encapsulating described LED array, described LED array is by described copper base and described positive terminal and negative terminals sub-connection, described box dam frame encloses and forms rectangle framework, in described rectangle framework, be provided with silver coating, described LED array is fixed on described silver coating by elargol, spacing between the above LED chip of described silver coating is 0.70～0.80mm.
Further, between described copper base and described silver coating, be also provided with one and be located at the insulating barrier on described copper base and be located at the circuit layer on described insulating barrier, described LED array is electrically connected to described positive terminal, described negative terminals by described circuit layer.
Particularly, described insulating barrier is fixed on described copper base by pressing.
Particularly, described insulating barrier is fixed on described copper base by coating.
Further, described box dam frame adopts resistant to elevated temperatures PPA plastic cement to be adhered on described copper base.
Further, the rectangular array of described LED array, described wire is gold thread, described gold thread is by the adjacent described LED chip series connection of every row.
The beneficial effects of the utility model are: high-power LED encapsulation structure provided by the utility model is mainly to use with interior high-power LED encapsulation structure for 100W, in its encapsulating structure, spacing on its silver coating between adjacent described LED chip is 0.70～0.80mm, make in LED encapsulating structure the LED chip in unit are in a rational scope, can guarantee to encapsulate in rear use procedure, the surface temperature of packaging silicon rubber colloid can be controlled at below 180 ℃, box dam frame provided by the utility model is rational in infrastructure simultaneously, there is good air-tightness and light efficiency high, hot spot is good, and on copper base, be provided with positive terminal and negative terminals, make LED encapsulating structure connect power supply convenient, need not weld in addition, can promote packaging efficiency, thereby improve useful life and the stability of high-power LED encapsulation structure.
Accompanying drawing explanation
Fig. 1 is the perspective view of the high-power LED encapsulation structure that provides of the utility model embodiment;
Fig. 2 is the cutaway view at A-A place in Fig. 1;
Fig. 3 is the partial enlarged drawing at B place in Fig. 2;
Fig. 4 is the copper base of high-power LED encapsulation structure and the front view of box dam frame that the utility model embodiment provides;
In figure: 100-LED encapsulating structure
Sub-12-negative terminals of 10-copper base 11-positive terminal
20-box dam frame 30-silver coating 40-LED array
41-LED chip 50-wire 60-silica gel
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
Referring to Fig. 1-4, be high-power LED encapsulation structure 100 provided by the utility model, this high-power LED encapsulation structure 100 mainly for be that high-powered LED lamp once of 100W is used.Particularly, high-power LED encapsulation structure 100 provided by the utility model comprises copper base 10, be fixedly arranged on positive terminal 11 on copper base 10, negative terminals son 12 and box dam frame 20, be located at the LED array 40 being formed by several LED chips 41 in box dam frame 20 and the silica gel 60 of packaged LED array 40, LED array 40 is connected with negative terminals 12 with positive terminal 11 by copper base 10, box dam frame 20 encloses and forms rectangle framework, in rectangle framework, be provided with silver coating 30, LED array 40 is fixed on silver coating 30 by elargol (not shown), spacing on silver coating 30 between adjacent LED chip 41 is 0.70～0.80mm.
First, in high-power LED encapsulation structure 100 provided by the utility model, adopted the binding post 11,12 of high-quality conductor material, this binding post 11,12, there is Low ESR, high conduction ability, by the circuit layer (not shown) on copper base 10, be connected with LED array 40, and this positive terminal 11 and negative terminals 12 are when external power supply, without welding, promote the packaging efficiency of great power LED module, also improved useful life and the stability of high-powered LED lamp.
Then, in high-power LED encapsulation structure 100 provided by the utility model, this box dam frame 20 adopts resistant to elevated temperatures PPA plastic cement to be adhered on copper base 10.This box dam frame 20 is PPA plastic cement of a kind of high temperature resistant, siliceous material that air-tightness is good, is mainly the silica gel 60 while encapsulating for enclosing.Simultaneously, the material that the material that adopts due to this box dam frame 20 is more traditional is more outstanding, make box dam frame 20 there is good hardness, make in installation process, be not easy distortion, therefore can not pull the wire 50 connecting, avoid easily breaking because box dam frame 20 is insecure the appearance that wire 50 causes dead lamp phenomenon.
And in high-power LED encapsulation structure 100 provided by the utility model, the spacing on silver coating 30 between adjacent LED chip 41 is 0.70～0.80mm.By the rational deployment of the LED array 40 on silver coating 30, make spacing between the adjacent LED chip 41 on silver coating 30 at 0.70～0.80mm.Like this, in high-powered LED lamp use procedure, between the adjacent LED chip 41 of guarantee, there is enough heat radiation spacing, can dispel the heat more fully, surperficial silica gel temperature can be controlled in 180 ℃, guarantee the normal serviceability temperature of LED lamp.
Finally, in high-power LED encapsulation structure 100 provided by the utility model, its silver coating 30 is electroplated onto silver slurry on copper base 10 by electroplating technology, the reflectivity that this silver coating 30 can improve LED module also can improve the effect of its conduction, and this LED chip 41 is fixed on silver coating 30 by elargol (not shown), this elargol has adopted more advanced high heat conduction elargol at present, after overbaking, LED chip 41 is fixed on silver coating 30, plays the effect of stickup, conduction and heat radiation.
Further, referring to Fig. 4, between copper base 10 and silver coating 30, be also provided with one and be located at the insulating barrier on copper base 10 and be located at the circuit layer on insulating barrier.In high-power LED encapsulation structure that the utility model provides 100, this copper base 10 is provided with insulating barrier (not shown), and circuit layer (not shown) is set on insulating barrier.The circuit of this LED chip 41 is arranged on this circuit layer, and silver coating 30 is set on this line layer again, and meanwhile, LED array 40 is just fixed on this silver coating 30.LED array 40 is electrically connected to positive terminal 11, negative terminals 12 by circuit layer.And particularly, insulating barrier provided by the utility model can be fixed on copper base 10 by pressing, can also be fixed on copper base 10 by coating.
Further, in the present embodiment, the rectangular array of LED array 40, wire 50 is gold thread, gold thread is by every row adjacent LED chip 41 series connection.This gold thread couples together adjacent LED chip 41 by automatic wire bonding machine welding machine, and finally access in the circuit layer of copper base 10, the LED array 40 connecting by wire 50 is finally electrically connected to positive terminal 11 and negative terminals 12 by the circuit layer of this copper base 10, thereby form complete path, when connecting external power supply pressurization to positive terminal 11 and negative terminals 12, can pass to LED array 40 by circuit layer step-down and by electric weight, realize the energising of LED module.
These are only preferred embodiment of the present utility model, not in order to limit the utility model, all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.
Claims (6)
1. high-power LED encapsulation structure, it is characterized in that, comprise copper base, be fixedly arranged on positive terminal on described copper base, negative terminals and box dam frame, the silica gel of being located at the LED array being formed by several LED chips in described box dam frame and encapsulating described LED array, described LED array is by described copper base and described positive terminal and negative terminals sub-connection, described box dam frame encloses and forms rectangle framework, in described rectangle framework, be provided with silver coating, described LED array is fixed on described silver coating by elargol, spacing on described silver coating between adjacent described LED chip is 0.70～0.80mm.
2. high-power LED encapsulation structure as claimed in claim 1, it is characterized in that, between described copper base and described silver coating, be also provided with one and be located at the insulating barrier on described copper base and be located at the circuit layer on described insulating barrier, described LED array is electrically connected to described positive terminal, described negative terminals by described circuit layer.
3. high-power LED encapsulation structure as claimed in claim 2, is characterized in that, described insulating barrier is fixed on described copper base by pressing.
4. high-power LED encapsulation structure as claimed in claim 2, is characterized in that, described insulating barrier is fixed on described copper base by coating.
5. high-power LED encapsulation structure as claimed in claim 1 or 2, is characterized in that, described box dam frame adopts resistant to elevated temperatures PPA plastic cement to be adhered on described copper base.
6. high-power LED encapsulation structure as claimed in claim 1, is characterized in that, the rectangular array of described LED array, and the adjacent described LED chip of every row is connected by wire, and described wire is gold thread.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420179285.5U CN203895451U (en) | 2014-04-14 | 2014-04-14 | Large power led packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420179285.5U CN203895451U (en) | 2014-04-14 | 2014-04-14 | Large power led packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203895451U true CN203895451U (en) | 2014-10-22 |
Family
ID=51721813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420179285.5U Expired - Lifetime CN203895451U (en) | 2014-04-14 | 2014-04-14 | Large power led packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203895451U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598069A (en) * | 2018-05-17 | 2018-09-28 | 中国计量大学 | A kind of integrated monolithic adjustable color LED based on structured fluorescent film |
-
2014
- 2014-04-14 CN CN201420179285.5U patent/CN203895451U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598069A (en) * | 2018-05-17 | 2018-09-28 | 中国计量大学 | A kind of integrated monolithic adjustable color LED based on structured fluorescent film |
| CN108598069B (en) * | 2018-05-17 | 2020-04-28 | 中国计量大学 | Integrated monolithic color temperature adjustable LED based on structured fluorescent film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201868429U (en) | Embedded-type encapsulating structure of luminous diode | |
| CN201149869Y (en) | LED encapsulation structure | |
| CN102447049A (en) | LED (light-emitting diode) package structure based on COB (chip on board) package technology and LED illuminator | |
| CN101958387A (en) | Novel LED light resource module packaging structure | |
| CN2935474Y (en) | Functional lighting LED | |
| CN203895451U (en) | Large power led packaging structure | |
| CN202487656U (en) | All-dimensional lighting LED packaging structure | |
| CN205028918U (en) | LED support and LED packaging body | |
| CN105070813A (en) | Large-power LED support and packaging method thereof | |
| CN203103348U (en) | COB base plate structure-equipped LED lamp source | |
| CN202678310U (en) | A large-power LED integrated array lighting source based on COB technology | |
| CN201758139U (en) | Novel LED light source module packaging structure | |
| CN102832330B (en) | Wafer level LED packaging structure | |
| CN208422955U (en) | A kind of UV-LED light source and its lamps and lanterns | |
| CN201985138U (en) | Integrated bypass module for solar power generation | |
| CN202695440U (en) | Led integrated light source | |
| CN207967037U (en) | A kind of two-way LED encapsulation structure be connected | |
| CN204834684U (en) | Adopt COB light source of face down chip encapsulation | |
| CN102544342B (en) | Heat radiator and electrode integrated heat radiating device and manufacturing method thereof | |
| CN201378598Y (en) | Encapsulation structure of high-power light emitting diode with high light emitting rate | |
| CN206419687U (en) | A kind of Novel LED light | |
| CN205692865U (en) | Mirror type metal basal board LED encapsulation structure | |
| CN204834676U (en) | LED light source module based on mirror aluminum substrate | |
| CN208189583U (en) | A kind of flip LED chips matrix package module of independent control | |
| CN202423286U (en) | Integrated LED point light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Sunshine Industrial Park A1 building 7th floor 2-3 No. 518000 Guangdong city of Shenzhen province Baoan District Xixiang Hezhou Industrial Zone South Patentee after: XUYU OPTOELECTRONICS (SHENZHEN) Co.,Ltd. Address before: Sunshine Industrial Park A1 building 7th floor 2-3 No. 518000 Guangdong city of Shenzhen province Baoan District Xixiang Hezhou Industrial Zone South Patentee before: SHENZHEN XUYU OPTOELECTRONICS Co.,Ltd. |
|
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Zhongshan Innocloud Intellectual Property Services Co.,Ltd. Assignor: XUYU OPTOELECTRONICS (SHENZHEN) Co.,Ltd. Contract record no.: 2018440020040 Denomination of utility model: High-color-rendering high-power LED (light emitting diode) encapsulation structure and manufacture method of high-color-rendering high-power LED encapsulation structure Granted publication date: 20141022 License type: Common License Record date: 20180419 |
|
| EE01 | Entry into force of recordation of patent licensing contract | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141022 |
|
| CX01 | Expiry of patent term |