CN203895451U - Large power led packaging structure - Google Patents

Abstract

The utility model provides a high-power LED packaging structure, including a copper substrate, a positive terminal, a negative terminal and a dam frame, an LED array composed of several LED chips, and silica gel for packaging the LED array. The LED array passes through The copper substrate is connected to the positive terminal and the negative terminal, and the dam frame is enclosed to form a rectangular frame, the rectangular frame is provided with a silver-plated layer, and the LED array is fixed on the silver-plated layer by silver glue , the distance between adjacent LED chips on the silver plating layer is 0.70-0.80mm. The high-power LED packaging structure provided by the utility model is mainly used for the high-power LED packaging structure within 100W, and the distance between the adjacent LED chips on the silver-plated layer is 0.70-0.80mm, which can ensure that the LED chips can be used after packaging. During the process, the surface temperature of the encapsulated silicone colloid can be controlled below 180°C.

Description

High Power LED Packaging Structure

technical field

The utility model relates to an LED lighting packaging structure, in particular to a high-power LED packaging structure.

Background technique

In the LED packaging structure, for the LED packaging structure with a power of less than 100W, because the functional area of the bracket is too small, the arrangement of the LED chips is too tight, the heat dissipation is not good during use, and the surface temperature of the silicone colloid is too high, resulting in dead lights and other defects. At the same time, because the colloid of the traditional dam frame is soft, it is easy to crush the wire during installation, resulting in dead lights, and the air tightness of the dam frame is not good, and the light spot is poor, which affects the service life and stability of high-power LED lights. sex.

Utility model content

The purpose of the utility model is to solve the disadvantages of the existing high-power LED packaging structure within 100W, such as poor heat dissipation caused by too close arrangement of adjacent LED chips, and high surface temperature of the silicone colloid, which may easily cause adverse reactions such as dead lights, and provides a Suitable for high-power LED packaging structure within 100W.

The technical solution adopted by the utility model to solve the technical problem is: a high-power LED packaging structure, including a copper substrate, a positive connection terminal fixed on the copper substrate, a negative connection terminal and a dam frame, which are arranged on the dam An LED array composed of several LED chips in the frame and the silica gel that encapsulates the LED array, the LED array is connected to the positive terminal and the negative terminal through the copper substrate, and the dam frame is enclosed to form A rectangular frame, the rectangular frame is provided with a silver-plated layer, the LED array is fixed on the silver-plated layer by silver glue, and the distance between the LED chips on the silver-plated layer is 0.70-0.80mm .

Further, an insulating layer disposed on the copper substrate and a circuit layer disposed on the insulating layer are also provided between the copper substrate and the silver-plated layer, and the LED array passes through the circuit layer. It is electrically connected with the positive terminal and the negative terminal.

Specifically, the insulating layer is fixed on the copper substrate by pressing.

Specifically, the insulating layer is fixed on the copper substrate by coating.

Further, the dam frame is bonded to the copper substrate with high temperature resistant PPA plastic.

Further, the LED array is a rectangular array, the wires are gold wires, and the gold wires connect the adjacent LED chips in each row in series.

The beneficial effect of the utility model is that: the high-power LED packaging structure provided by the utility model is mainly used for the high-power LED packaging structure within 100W. In the packaging structure, the LED chip is adjacent to the silver-plated layer The distance between them is 0.70 ~ 0.80mm, so that the LED chips per unit area in the LED package structure are within a reasonable range, which can ensure that the surface temperature of the packaged silicone colloid can be controlled below 180°C during use after packaging, and at the same time The structure of the dam frame provided by the utility model is reasonable, has good airtightness, high light efficiency, and good light spots, and the positive terminal and negative terminal are arranged on the copper substrate, so that the LED packaging structure is connected to the power supply more easily. It is convenient and does not require additional welding, which can improve the assembly efficiency, thereby improving the service life and stability of the high-power LED packaging structure.

Description of drawings

Fig. 1 is a three-dimensional structural schematic diagram of a high-power LED packaging structure provided by an embodiment of the present invention;

Fig. 2 is the sectional view of A-A place among Fig. 1;

Fig. 3 is a partial enlarged view of place B in Fig. 2;

Fig. 4 is a front view of the copper substrate and the dam frame of the high-power LED packaging structure provided by the embodiment of the utility model;

In the picture: 100-LED package structure

10-Copper substrate 11-Positive terminal 12-Negative terminal

20-dam frame 30-silver plating layer 40-LED array

41-LED Chip 50-Wire 60-Silicone

Detailed ways

In order to make the purpose, technical solution and advantages of the utility model clearer, the utility model will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the utility model, and are not intended to limit the utility model.

Referring to Fig. 1-4, it is a high-power LED packaging structure 100 provided by the utility model, and the high-power LED packaging structure 100 is mainly used for high-power LED lamps below 100W. Specifically, the high-power LED packaging structure 100 provided by the utility model includes a copper substrate 10, a positive connection terminal 11 fixed on the copper substrate 10, a negative connection terminal 12 and a dam frame 20, which are arranged in the dam frame 20. The LED array 40 composed of several LED chips 41 and the silica gel 60 encapsulating the LED array 40, the LED array 40 is connected to the positive terminal 11 and the negative terminal 12 through the copper substrate 10, and the dam frame 20 is enclosed to form a rectangular frame , a silver-plated layer 30 is provided in the rectangular frame, and the LED array 40 is fixed on the silver-plated layer 30 through silver glue (not shown in the figure), and the distance between adjacent LED chips 41 on the silver-plated layer 30 is 0.70-0.80 mm.

First of all, in the high-power LED package structure 100 provided by the present invention, the connecting terminals 11 and 12 of high-quality conductor materials are used. The connecting terminals 11 and 12 have low impedance and high conductivity. The circuit layer (not shown in the figure) is connected to the LED array 40, and when the positive terminal 11 and the negative terminal 12 are connected to an external power source, there is no need for welding, which improves the assembly efficiency of the high-power LED module and improves the efficiency of the high-power LED module. lamp life and stability.

Then, in the high-power LED packaging structure 100 provided by the present invention, the dam frame 20 is bonded on the copper substrate 10 by using high-temperature-resistant PPA plastic. The dam frame 20 is a silicon-containing PPA plastic with high temperature resistance and good airtightness, and is mainly used to enclose the silica gel 60 during packaging. Simultaneously, because the material adopted by the dam frame 20 is more excellent than the traditional material, the dam frame 20 has better hardness, so that it is not easy to deform during the installation process, so the connecting wire 50 will not be pulled. , to avoid the occurrence of dead lights caused by the wire 50 being easily broken because the dam frame 20 is not firm.

Moreover, in the high-power LED packaging structure 100 provided by the present invention, the distance between adjacent LED chips 41 on the silver plating layer 30 is 0.70-0.80 mm. Through the rational layout of the LED array 40 on the silver-plated layer 30 , the distance between adjacent LED chips 41 on the silver-plated layer 30 is 0.70-0.80 mm. In this way, during the use of high-power LED lamps, it is possible to ensure that there is a sufficient heat dissipation distance between adjacent LED chips 41, and more sufficient heat dissipation can be achieved, so that the temperature of the silica gel on the surface can be controlled within 180°C, ensuring that the LED lamps normal operating temperature.

Finally, in the high-power LED packaging structure 100 provided by the utility model, the silver-plated layer 30 is electroplated with silver paste on the copper substrate 10 through an electroplating process, and the silver-plated layer 30 can improve the reflectivity of the LED module. It can also improve its conductive effect, and the LED chip 41 is fixed on the silver plated layer 30 through silver glue (not shown in the figure). The silver glue adopts the current relatively advanced high thermal conductivity silver glue. The LED chip 41 is fixed on the silver-plated layer 30 to play the functions of sticking, conducting electricity and dissipating heat.

Further, referring to FIG. 4 , an insulating layer disposed on the copper substrate 10 and a circuit layer disposed on the insulating layer are further disposed between the copper substrate 10 and the silver-plated layer 30 . In the high-power LED packaging structure 100 provided by the present invention, an insulating layer (not shown in the figure) is provided on the copper substrate 10, and a circuit layer (not shown in the figure) is provided on the insulating layer. The circuit of the LED chip 41 is arranged on the circuit layer, and the silver-plated layer 30 is arranged on the circuit layer, and at the same time, the LED array 40 is fixed on the silver-plated layer 30 . The LED array 40 is electrically connected to the positive terminal 11 and the negative terminal 12 through the circuit layer. Specifically, the insulating layer provided by the present invention can be fixed on the copper substrate 10 by pressing, or can be fixed on the copper substrate 10 by coating.

Further, in this embodiment, the LED array 40 is a rectangular array, the wires 50 are gold wires, and the gold wires connect the adjacent LED chips 41 in each row in series. The gold wire connects the adjacent LED chips 41 through a fully automatic wire bonding machine, and finally connects to the circuit layer of the copper substrate 10, and the LED array 40 connected by the wire 50 passes through the circuit layer of the copper substrate 10 to finally It is electrically connected with the positive terminal 11 and the negative terminal 12 to form a complete path. When the positive terminal 11 and the negative terminal 12 are connected to an external power supply and pressurized, the voltage can be reduced through the circuit layer and the power can be transferred to the LED. The array 40 realizes the power supply of the LED module.

The above are only preferred embodiments of the present utility model, and are not intended to limit the present utility model. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present utility model should be included in the utility model. within the scope of protection.

Claims (6)

1. high-power LED encapsulation structure, it is characterized in that, comprise copper base, be fixedly arranged on positive terminal on described copper base, negative terminals and box dam frame, the silica gel of being located at the LED array being formed by several LED chips in described box dam frame and encapsulating described LED array, described LED array is by described copper base and described positive terminal and negative terminals sub-connection, described box dam frame encloses and forms rectangle framework, in described rectangle framework, be provided with silver coating, described LED array is fixed on described silver coating by elargol, spacing on described silver coating between adjacent described LED chip is 0.70～0.80mm.

2. high-power LED encapsulation structure as claimed in claim 1, it is characterized in that, between described copper base and described silver coating, be also provided with one and be located at the insulating barrier on described copper base and be located at the circuit layer on described insulating barrier, described LED array is electrically connected to described positive terminal, described negative terminals by described circuit layer.

3. high-power LED encapsulation structure as claimed in claim 2, is characterized in that, described insulating barrier is fixed on described copper base by pressing.

4. high-power LED encapsulation structure as claimed in claim 2, is characterized in that, described insulating barrier is fixed on described copper base by coating.

5. high-power LED encapsulation structure as claimed in claim 1 or 2, is characterized in that, described box dam frame adopts resistant to elevated temperatures PPA plastic cement to be adhered on described copper base.

6. high-power LED encapsulation structure as claimed in claim 1, is characterized in that, the rectangular array of described LED array, and the adjacent described LED chip of every row is connected by wire, and described wire is gold thread.