CN218887199U - Variable column type anode shell type cathode square three-dimensional detector - Google Patents

Variable column type anode shell type cathode square three-dimensional detector Download PDF

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CN218887199U
CN218887199U CN202222422844.8U CN202222422844U CN218887199U CN 218887199 U CN218887199 U CN 218887199U CN 202222422844 U CN202222422844 U CN 202222422844U CN 218887199 U CN218887199 U CN 218887199U
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detector
semiconductor
base member
electrode
contact layer
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路顺茂
赵珍阳
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Shandong Dongyi Photoelectric Instruments Co ltd
Yantai Dongyi Optoelectronic Industrial Technology Research Institute Co ltd
Shandong Optical Detector Semiconductor Technology Co ltd
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Shandong Dongyi Photoelectric Instruments Co ltd
Yantai Dongyi Optoelectronic Industrial Technology Research Institute Co ltd
Shandong Optical Detector Semiconductor Technology Co ltd
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Abstract

The utility model discloses a square three-dimensional detector of variable column type positive pole shell mould negative pole, the detector is formed by the concatenation of semiconductor base member unit array, the appearance of semiconductor base member unit is quadrangular prism shape, and semiconductor base member unit includes the semiconductor detector unit base member, and semiconductor detector unit base member side and bottom are filled shell mould negative pole electrode, and shell mould negative pole electrode's top is with second aluminium electrode contact layer, and the variable column type positive pole electrode in semiconductor detector unit base member top embedding center is equipped with first aluminium electrode contact layer on the variable column type positive pole in center, and it has the silica insulating layer to fill between first aluminium electrode contact layer and the second aluminium electrode contact layer. The detector has the advantages of improved resolution and sensitivity, simple process flow in the preparation process, shorter preparation time and higher cost performance.

Description

Variable column type anode shell type cathode square three-dimensional detector
Technical Field
The utility model belongs to the technical field of photoelectric detector, a square three-dimensional detector of variable column type positive pole shell mould negative pole is related to.
Background
With the rapid development of semiconductor detector technology, silicon detectors are rich in types, including silicon microstrip detectors, silicon pixel detectors, silicon drift detectors and the like, once the silicon detector is used, the silicon detector can rapidly replace gas detectors and scintillator detectors due to performance advantages, and occupies the half-wall river mountain in the field of detector application. For example, silicon microstrip detectors are widely used as core detectors in the world's major high-energy physical experiments; the silicon pixel detector has unusual performance in the field of medical imaging due to the characteristics of high position and energy resolution; the silicon drift detector makes great contribution to the aerospace detection of low-energy rays.
In 1997, s.parker et al designed and developed a structure completely different from a planar detector, called a three-dimensional columnar electrode silicon detector. In 2005, a Brookhaven laboratory in the united states proposed a novel three-dimensional electrode detector-three-dimensional trench electrode silicon detector on the basis of a three-dimensional columnar electrode detector. The electric field distribution in the detector unit of the groove-shaped electrode is more uniform, and the independence of each unit is stronger when the array is formed. The concept of trenches, which was first proposed by c.kenney, with electrodes embedded in the silicon body, places higher demands on design and process fabrication techniques, and also allows better performance of the detector cells and arrays. However, this kind of traditional three-dimensional detector's effective work area is less, compares with traditional three-dimensional detector, the utility model provides a novel three-dimensional detector structure is the square three-dimensional detector of variable column type positive pole shell mould negative pole, and its electric field distribution is more even, and effective work area is bigger and the blind spot is littleer promptly.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a square three-dimensional detector of variable column type positive pole shell mould negative pole, it is inhomogeneous to have solved the inside electric field distribution of current three-dimensional detector, and detector resolution ratio is low, and the dead zone area is too big and the lower problem of detector sensitivity that causes.
The utility model provides a technical scheme be, a square three-dimensional detector of variable column type positive pole shell mould negative pole, the detector is formed by the concatenation of semiconductor base member unit array, semiconductor base member unit's appearance is the quadrangular prism shape, semiconductor base member unit includes the semiconductor detector unit base member, semiconductor detector unit base member side and bottom filling shell mould cathode electrode, shell mould cathode electrode's top is with second aluminium electrode contact layer, the variable column type anode electrode in semiconductor detector unit base member top embedding center, be equipped with first aluminium electrode contact layer on the variable column type anode electrode in center, it has the silica insulating layer to fill between first aluminium electrode contact layer and the second aluminium electrode contact layer.
Furthermore, the length, width and height of the quadrangular prism-shaped semiconductor base unit are 400um 200um, the vertical distance between the shell type cathode electrode and the semiconductor detector unit base body is 10um, and the height of the silicon dioxide insulating layer is 5um.
Furthermore, the semiconductor detector unit matrix is N-type lightly doped, the shell type cathode electrode is P-type heavily doped, and the central variable column type anode electrode is N-type heavily doped.
Furthermore, the concentration of the doping of the matrix of the semiconductor detector unit is 8 multiplied by 10 11 ～1×10 12 /cm 2 The doping concentration of the shell type cathode electrode is 8 multiplied by 10 18 ～1×10 19 /cm 2 The doping concentration of the central variable column type anode electrode is 8 multiplied by 10 18 ～1× 10 19 /cm 2 。
The beneficial effects of the utility model are that:
1. the detector unit is designed into a quadrangular prism shape, and after the detector unit is formed into an array, all cathodes are tightly combined, so that the working area is enlarged, namely no dead zone exists.
2. Compared with the traditional silicon microstrip detector, the silicon pixel detector and the silicon drift detector, the three-dimensional detector has the advantages of simpler manufacturing process, fewer process layers, shorter manufacturing time and higher cost performance.
3. The study on the electrical properties of the square three-dimensional detector with the variable column-type anode shell-type cathode shows that more uniform electric potential distribution can be obtained through the variable depth due to the variable anode embedding depth, and the electric field distribution of the array is approximately the same as that of the structural unit of the detector.
4. The electric capacity of three-dimensional silicon detector unit only is relevant with self electrode area, the utility model discloses an electrode area compares in traditional whole face electrode littleer, possess less electric capacity, and detector electric capacity is lower corresponding noise also can be littleer, and does not receive the influence of adjacent unit, and the coherence is good.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the description below are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a structural view of the present invention.
Fig. 2 is a plan view of the present invention.
Fig. 3 isbase:Sub>A sectional viewbase:Sub>A-base:Sub>A of fig. 2.
Fig. 4 is an array diagram of the present invention.
Fig. 5a is a potential distribution plot of detector center anode insertion depth 50um.
Fig. 5b is a graph of the potential distribution for a detector center anode insertion depth of 100 um.
Fig. 5c is a graph of the potential distribution for a detector center anode insertion depth of 150 um.
Fig. 6 is an electric field distribution diagram for a detector center anode insertion depth of 50um.
Fig. 7a is an electron concentration profile of 50um depth of insertion of the anode at the center of the detector.
Fig. 7b is an electron concentration profile of a detector center anode insertion depth of 100 um.
Fig. 7c is an electron concentration profile of a detector center anode insertion depth of 150 um.
Fig. 8 is a diagram of the capacitance simulation of fig. 4.
Fig. 9 is a comparison graph of capacitance between the three-dimensional detector unit of the present invention and the conventional three-dimensional detector unit.
In the figure, 1, a silicon dioxide insulating layer, 2, a second aluminum electrode contact layer, 3, a shell type cathode electrode, 4, a semiconductor detector unit matrix, 5, a central variable column type anode electrode and 6, a first aluminum electrode contact layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.
The utility model provides a square three-dimensional detector of variable column type positive pole shell mould negative pole, the structure is shown in fig. 4, form by the concatenation of semiconductor matrix unit array, semiconductor matrix unit structure is shown in fig. 1-3, semiconductor matrix unit includes semiconductor detector unit base member 4, semiconductor detector unit base member 4 side and bottom fill shell mould cathode electrode 3, second aluminium electrode contact layer 2 is attached to the top of shell mould cathode electrode 3, variable column type anode electrode 5 in center is inlayed at semiconductor detector unit base member 4 top, be equipped with first aluminium electrode contact layer 6 on the variable column type anode electrode 5 in center, it has silica insulating layer 1 to fill between first aluminium electrode contact layer 6 and the second aluminium electrode contact layer 2.
The semiconductor base unit is in a quadrangular shape with a square top, and is convenient to form an array without dead zones in the figures 1-3; the semiconductor base unit shown in fig. 1 to fig. 3 may also be cylindrical, so that there may be more uniform electric field distribution inside the detector, but no array arrangement without dead zones may be implemented; the semiconductor matrix units shown in fig. 1 to 3 can also be hexagonal prism type, the electric field of the units is closest to circularity, and array arrangement without dead zones can be realized, but the process difficulty is high, and the production and processing are not facilitated; the square shape is simpler than the hexagon, the more complex the pattern is when the technology is made, the more difficult the technology is, and the semiconductor substrate unit is still square after the array is formed by the square on the top in fig. 1-3, and the shape is irregular after the array is formed by other shapes, which increases the technology processing difficulty.
The length, width and height of the quadrangular semiconductor base unit are 400um multiplied by 200um, the vertical distance between the shell type cathode electrode 3 and the semiconductor detector unit base 4 is 10um, if the thickness of the shell type cathode electrode is too small, the process is difficult to realize, and if the thickness of the shell type cathode electrode is too large, the proportion of the electrode area of the upper surface of the detector unit in the total area is too large, so that the capacitance is increased; the height of the silicon dioxide insulating layer 1 is 5 micrometers, the height of the silicon dioxide insulating layer is generally 3-5 micrometers, the height of the silicon dioxide insulating layer is determined according to the oxidation capacity of the oxidation furnace and the preparation process, the silicon dioxide insulating layer with the height of 5 micrometers is easy to realize on the oxidation process, and incident particles in the ion implantation process can be effectively blocked in the preparation process of the detector.
The semiconductor detector unit matrix 4 is N-type lightly doped with a doping concentration of 8 × 10 11 ～1×10 12 /cm 2 (ii) a The shell type cathode electrode 3 is P type heavily doped with doping concentration of 8 multiplied by 10 18 ～1×10 19 /cm 2 (ii) a The central variable column type anode electrode 5 is N type heavy doping with the doping concentration of 8 multiplied by 10 18 ～1×10 19 /cm 2 。
The utility model discloses carry out radiation ion and survey time measuring, shell type cathode electrode 3 collects the hole carrier, electron carrier is collected to the variable columnar order anode electrode 5 in center, after central variable columnar order anode electrode 5 and shell type cathode electrode 3 applyed voltage, radiation ion passes central variable columnar order anode electrode 5, shell type cathode electrode 3 and semiconductor detector unit base member 4, semiconductor detector unit base member 4 provides carrier electron and hole, electron drifts to central variable columnar order anode electrode 5, the hole drifts to shell type cathode electrode 3, produce the current signal at shell type cathode electrode 3 and central variable columnar order anode electrode 5, show the signal through external circuit.
The top of the traditional three-dimensional silicon detector is covered by an aluminum metal electrode, the electrode area almost occupies the top surface of the detector, and the large effective electrode area can cause the capacitance of the detector to be large; the utility model discloses an among the electrode design, electrode area is central variable column type anode electrode 5 and shell mould cathode electrode 3 electrode area sum between them, and its electrode area is little, only about 10% of top surface area, has reduced detector electric capacity by a wide margin, and detector electric capacity is lower corresponding noise more and less also, and then has improved the SNR, has improved the resolution ratio of detector.
The utility model discloses a square three-dimensional detector positive pole embedding degree of depth of variable column type positive pole shell mould negative pole is variable, can obtain more even potential distribution through changing the degree of depth, and the electric field distribution of array electric field distribution and detector constitutional unit is roughly the same, does not receive the influence of adjacent unit, and the coherence is good. Fig. 5a is a potential distribution diagram for a detector center anode insertion depth of 50um, fig. 5b is a potential distribution diagram for a detector center anode insertion depth of 100um, and fig. 5c is a potential distribution diagram for a detector center anode insertion depth of 150 um. Fig. 6 is an electric field distribution diagram for a detector center anode insertion depth of 50um. Fig. 7a is an electron concentration profile for a detector center anode insertion depth of 50um, fig. 7b is an electron concentration profile for a detector center anode insertion depth of 100um, and fig. 7c is an electron concentration profile for a detector center anode insertion depth of 150 um.
Through fig. 5a, 5b, 5c and 7a, 7b, 7c, it can be seen that the potential and electron concentration distribution of the three-dimensional detector with three different embedding depths is uniform, and no obvious low potential region, i.e. no dead region, exists; FIG. 6 is a graph of the electric field distribution for a detector center anode insertion depth of 50um showing the high electric field concentrated at the center anode location, consistent with detector logic; fig. 8 is a capacitance simulation diagram of the detector array (fig. 4) according to the present invention, and it can be seen from fig. 8 that the capacitance of the array detector is not greatly different from the capacitance of the detector unit, and the capacitance values of the two are in an order of magnitude; fig. 9 is the utility model discloses three-dimensional detector unit and traditional three-dimensional detector unit's electric capacity contrast map, blue curve represent traditional three-dimensional detector, and red curve represents the utility model discloses three-dimensional detector can know through fig. 9 the utility model discloses three-dimensional detector is less than traditional three-dimensional detector at the electric capacity under the condition of exhausting.
A method for preparing a variable column type anode shell type cathode square three-dimensional detector comprises the following steps:
s1, cleaning: repeatedly cleaning the wafer for three times by using deionized water with the resistivity of more than 18 megaohms to ensure that the wafer substrate is clean without dust;
the wafer is a high-purity monocrystalline silicon slice which is not doped, has no oxide layer and has a certain thickness and is a raw material of a detector chip;
s2, oxidizing: and introducing inert gas nitrogen into the oxidation furnace, heating to 400-800 ℃, loading the cleaned wafer at the temperature, introducing pure oxygen, heating the oxidation furnace to 1000-1100 ℃, keeping the furnace temperature in the environment, and continuously introducing oxygen for 5 hours or 9 hours to obtain an oxidation layer of 3000 angstroms or 5000 angstroms. The colors presented by different oxide layer thicknesses are different, wherein 0-3000 angstrom is a color cycle, 1500 angstrom is royal blue, 3000 angstrom oxide layer is violet, and a certain thickness between 3000-5000 angstrom is near royal blue; the oxidation time of the utility model is 5 hours, and the thickness of the insulating oxide layer on the back surface of the formed wafer is 3000 angstrom, namely 3um;
s3, double-sided exposure: after the surface of the wafer is coated with photoresist of 2-3 um and dried, the wafer is exposed on a photoetching machine by using a mask plate, the exposure light intensity is 120cd, and the time is 6.5s;
the double-sided exposure technology is IC standard technology, and the double-sided alignment technology is needed in the process, when the photoetching machine is used for exposure, because of the design problem of the detector unit, the back side of the chip is not required to be aligned with the front side exposure pattern when the back side of the chip is exposed, so the back side of the chip is a whole surface cathode, and the exposure times are less than that of other types of detectors, therefore, the detector of the utility model is simpler in the exposure technological process;
s4, etching: etching the oxide layer on the back surface of the wafer by using BOE etching liquid at the temperature of 25-26.5 ℃, wherein the etching depth is 1500 angstrom, namely 1.5um; leaking the intrinsic silicon substrate when the etching depth of the front surface of the wafer is 3000 angstrom, namely 3um, and etching the intrinsic silicon substrate leaking from the front surface by using an ion etching technology, wherein the etching depth is 390um;
the thickness of the oxide layer of the wafer with the thickness of 5000 angstrom is an IC standard process, and the thickness of the oxide layer of the wafer with the thickness of 3000 angstrom is enough to shield high-speed doped ions in the ion implantation process; in the etching process, 1500 angstrom is required to be left in the oxide layer, the thickness of the 3000 angstrom oxide layer only has one color cycle in the etching process, the 1500 angstrom thickness can be observed by naked eyes conveniently, the work of testing the film thickness by a step profiler can be omitted, and the process efficiency is improved;
s5, ion implantation: the implantation depth of boron on the front surface of the wafer is 390um, and the boron impurity concentration is 8 multiplied by 10 11 ～1×10 12 /cm 2 (ii) a Boron is injected into the back surface of the wafer to serve as a chip cathode, namely a shell-type cathode electrode 3, and the injection depth is 10um; boron impurity concentration of 8 x 10 18 ～1×10 19 /cm 2 (ii) a The front side phosphorus of the wafer is implanted as the anode of the chip, namely the center variable column type anode electrode 5, the implantation depth is 50 to 150um, the phosphorus impurity concentration is 8 multiplied by 10 18 ～1×10 19 /cm 2 The different degree of depth can be poured into according to the demand, the utility model discloses the positive phosphorus of wafer pours into the degree of depth into and is 50um.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.

Claims (5)

1. The utility model provides a square three-dimensional detector of variable column type positive pole shell mould negative pole, its characterized in that, the detector is formed by semiconductor matrix unit array concatenation, the appearance of semiconductor matrix unit is the quadrangular prism shape, semiconductor matrix unit includes semiconductor detector unit base member (4), semiconductor detector unit base member (4) side and bottom packing shell mould cathode electrode (3), second aluminium electrode contact layer (2) are attached to the top of shell mould cathode electrode (3), variable column type anode electrode (5) in center are embedded to semiconductor detector unit base member (4) top, be equipped with first aluminium electrode contact layer (6) on variable column type anode electrode in center (5), it has silica insulating layer (1) to fill between first aluminium electrode contact layer (6) and second aluminium electrode contact layer (2).
2. The square three-dimensional detector of claim 1, wherein the rectangular prism-shaped semiconductor base unit has a length, a width and a height of 400um x 200um.
3. The square three-dimensional detector of claim 1, wherein the vertical distance between the shell-type cathode electrode (3) and the semiconductor detector cell matrix (4) is 10um.
4. The square three-dimensional detector of the variable cylindrical anode shell type cathode of claim 1, wherein the height of the silicon dioxide insulating layer (1) is 5um.
5. The square three-dimensional detector of claim 1, wherein the semiconductor detector unit matrix (4) is lightly doped N-type, the shell cathode electrode (3) is heavily doped P-type, and the central variable cylindrical anode electrode (5) is heavily doped N-type.
CN202222422844.8U 2022-09-14 2022-09-14 Variable column type anode shell type cathode square three-dimensional detector Active CN218887199U (en)

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