CN218829899U

CN218829899U - Wide-range bidirectional level conversion circuit

Info

Publication number: CN218829899U
Application number: CN202223139838.8U
Authority: CN
Inventors: 薄中亚
Original assignee: Changzhou Bomedent Medical Technology Co ltd
Current assignee: Changzhou Bomedent Medical Technology Co ltd
Priority date: 2022-11-25
Filing date: 2022-11-25
Publication date: 2023-04-07
Anticipated expiration: 2032-11-25

Abstract

The utility model provides a wide range two-way level switching circuit, including the conversion MOS pipe, the source electrode of conversion MOS pipe is connected with first power end through first pull-up resistance, and the drain electrode of conversion MOS pipe is connected with second power end through second pull-up resistance, and the grid electrode of conversion MOS pipe is connected with second power end; the voltage value of the second power supply terminal is higher than the voltage value of the first power supply terminal. The utility model provides a pair of two-way level conversion circuit of wide range has the convertible level scope of broad, has widened the lectotype scope of components and parts, has simplified circuit design.

Description

Wide-range bidirectional level conversion circuit

Technical Field

The utility model belongs to the technical field of level shift circuit, particularly, relate to a two-way level shift circuit of wide range.

Background

The level shift circuit in the market at present is generally a diode level shift circuit, a triode level shift circuit or a MOS transistor level shift circuit. The diode level conversion circuit can not realize bidirectional level conversion and has narrow conversion range. The triode level switching circuit has high requirement on the current of the data line and has narrow switching range. The lowest voltage conversion range of the common MOS tube level conversion circuit is limited by the conduction voltage of the MOS tube, so that the lowest voltage conversion range is difficult to achieve, and the lowest voltage conversion range can not meet the requirements when used in a conversion scene below 1.8V. Moreover, different switching levels need to select MOS transistors with different conduction voltages, so that the design is complicated and the compatibility is poor. Moreover, two very close level transitions cannot be completed, for example, 1.8V to 3.3V, the voltage difference is only 1.5V, and taking a 2N7002 MOS transistor as an example, the typical on-state voltage is 2V, and the transition requirement cannot be met.

The circuit can not only meet the bidirectional conversion of common levels of 5V,3.3V and 1.8V in the circuit, but also meet the mutual conversion between any two different levels of 1V and below to dozens of volts and above by only adjusting different values of the two resistors.

Disclosure of Invention

The utility model discloses to the aforesaid is not enough, provides a two-way level conversion circuit of wide range, has the convertible level scope of broad, has widened the lectotype scope of components and parts, has simplified circuit design.

In order to solve the technical problem, the embodiment of the utility model provides an adopt following technical scheme:

the embodiment of the utility model provides a two-way level shift circuit of wide range, including the conversion MOS pipe, the source electrode of conversion MOS pipe is connected with first power end through first pull-up resistance, and the drain electrode of conversion MOS pipe is connected with the second power end through second pull-up resistance, and the grid of conversion MOS pipe is connected with the second power end; the level of the second power supply terminal is higher than the level of the first power supply terminal.

As the embodiment of the utility model provides a further improvement, the grid of conversion MOS pipe passes through divider resistance and is connected with the second power end.

As the embodiment of the utility model provides a further improvement, the conversion MOS pipe is N channel MOS pipe.

As a further improvement of the embodiment of the present invention, the lowest level value of the first power source terminal is less than or equal to 1V.

As a further improvement of the embodiment of the present invention, the maximum level value of the second power source end is greater than or equal to the turn-on voltage value of the MOS transistor.

Compared with the prior art, the technical scheme of the utility model following beneficial effect has: the utility model provides a two-way level shift circuit of wide range, the grid connection of conversion MOS pipe is on higher voltage, and minimum conversion level can be for 1V and following, and the highest conversion level is for conversion MOS pipe turn-on voltage and above, has the convertible level scope of broad, has widened the lectotype scope of MOS, has increased the practicality, has strengthened the commonality for the design approaches to the modularization, has reduced material cost and research and development time cost.

Drawings

Fig. 1 is a schematic diagram of the structure of the wide-range bidirectional level shift circuit of the present embodiment.

Description of the main elements

First power supply terminal VCC1

Second power supply terminal VCC2

Conversion MOS tube Q1

First pull-up resistor R1

Second pull-up resistor R4

First voltage dividing resistor R2

Second voltage dividing resistor R3

Ground GND

Detailed Description

The technical solution of the present invention will be described in detail with reference to the accompanying drawings.

The embodiment of the utility model provides a two-way level switching circuit of wide range, as shown in fig. 1, including conversion MOS pipe Q1, conversion MOS pipe Q1's source electrode is connected with first power end VCC1 through first pull-up resistance R1, and conversion MOS pipe Q1's drain electrode is connected with second power end VCC2 through second pull-up resistance R4. The gate of the conversion MOS transistor Q1 is connected to the second power supply terminal VCC2 through a first voltage-dividing resistor R2, and the gate of the conversion MOS transistor Q1 is connected to the ground terminal through a second voltage-dividing resistor R3. The level of the second power supply terminal VCC2 is higher than the level of the first power supply terminal VCC 1.

The switching MOS tube realizes mutual switching of different levels through switching on and switching off. The first pull-up resistor R1 and the second pull-up resistor R4 pull up the level of the data line when idle to the level of the first power supply terminal VCC1 and the second power supply terminal VCC2, respectively. The first voltage-dividing resistor R2 and the second voltage-dividing resistor R3 can control the conduction voltage of the conversion MOS tube by selecting the resistance values with different ratios.

According to the wide-range bidirectional level conversion circuit, the grid electrode of the conversion MOS tube Q1 is connected to a higher voltage, the lowest conversion level can be 1V or below, the highest conversion level is the conduction voltage of the conversion MOS tube and above, the wide conversion level range is achieved, the wide conversion level conversion circuit can be directly applied to different voltage conversion occasions without special treatment, the design approaches to modularization, and material cost and research and development time cost are effectively reduced. The selection range of the MOS is widened, the proportion of the resistance value is adjusted under different conversion voltage values, the effective breakover voltage of the conversion MOS tube is obtained, and the circuit can normally work, so that the universality and the practicability of the circuit are improved.

Two specific examples are provided below.

Example 1.8V to 3.3V

The switching MOS tube adopts 2N7002, and the conduction voltage value is 2V. R1 and R4 are 10 kilo-ohms, R2 is 0 kilo-ohms, and R3 is 20 kilo-ohms. The VCC1 level was 1.8V and the VCC2 level was 3.3V.

If VCC1 side (1.8V) is high level, the grid level of the conversion MOS tube is 3.3V, the source level is 1.8V, VGS is 1.5V, the conversion MOS tube is not conducted, and VCC2 side (3.3V) is high level.

If VCC1 side (1.8V) is low, gate level of the switching MOS tube is 3.3V, source level is 0V, VGS is 3.3V, the switching MOS tube is conducted, and VCC2 side (3.3V) also becomes low.

If VCC2 side (3.3V) is high level, the grid electrode level of the conversion MOS tube is 3.3V, the source electrode level is 1.8V, VGS is 1.5V, the conversion MOS tube is not conducted, and VCC1 side (1.8V) is high level.

If VCC2 side (3.3V) is low, gate level of the switching MOS tube is 3.3V, source level is 0V, VGS is 3.3V, the switching MOS tube is conducted, and VCC1 side (3.3V) also becomes low.

Example 2 1V to 20V

The switching MOS tube adopts 2N7002, and the conduction voltage value is 2V. R1 and R4 are 10 kilo-ohms, R2 is 10 ohms, and R3 is 1.2 kilo-ohms. The VCC1 level is 1v and the VCC2 level is 20V.

If VCC1 side (1V) is high level, the grid electrode level of the conversion MOS tube is 2V, the source electrode level is 1V, VGS is 1V, the conversion MOS tube is not conducted, and VCC2 side (20V) is high level.

If VCC1 side (1V) is low level, gate level of the switching MOS tube is 2V, source level is 0V, VGS is 2V, the switching MOS tube is conducted, and VCC2 side (20V) also becomes low level.

If VCC2 side (20V) is high level, the grid level of the conversion MOS tube is 2V, the source level is 1V, VGS is 1V, the conversion MOS tube is not conducted, and VCC1 side (1V) is high level.

If VCC2 side (20V) is low, gate level of the switching MOS tube is 2V, source level is 0V, VGS is 2V, the switching MOS tube is conducted, and VCC1 side (1V) also becomes low.

The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are given by way of illustration only, and that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. A wide-range bidirectional level conversion circuit is characterized by comprising a conversion MOS tube, wherein a source electrode of the conversion MOS tube is connected with a first power supply end through a first pull-up resistor, a drain electrode of the conversion MOS tube is connected with a second power supply end through a second pull-up resistor, and a grid electrode of the conversion MOS tube is connected with the second power supply end; the level of the second power supply terminal is higher than the level of the first power supply terminal.

2. The wide range bi-directional level shift circuit of claim 1, wherein the gate of the shift MOS transistor is connected to the second power source terminal through a voltage dividing resistor.

3. The wide range bi-directional level shift circuit of claim 1, wherein the switching MOS transistor is an N-channel MOS transistor.

4. The wide range bi-directional level shift circuit of claim 1, wherein the lowest level value of said first power supply terminal is 1V or less.

5. The wide range bi-directional level shifter circuit of claim 1, wherein the maximum level value of the second power source terminal is equal to or greater than the turn-on voltage value of the MOS transistor.