CN218274577U - SMT diode packaging structure with high heat dissipation performance - Google Patents
SMT diode packaging structure with high heat dissipation performance Download PDFInfo
- Publication number
- CN218274577U CN218274577U CN202222635891.0U CN202222635891U CN218274577U CN 218274577 U CN218274577 U CN 218274577U CN 202222635891 U CN202222635891 U CN 202222635891U CN 218274577 U CN218274577 U CN 218274577U
- Authority
- CN
- China
- Prior art keywords
- heat dissipation
- plate
- electrode
- plate electrode
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a SMT diode packaging structure of high heat dissipating ability, which comprises a substrate, the plastic-sealed body, first plate electrode, the second plate electrode, the heating panel, the heat dissipation net, chip and wire, the base plate top is equipped with the plastic-sealed body, the both sides between base plate and plastic-sealed body are established respectively to first plate electrode one end and second plate electrode one end, the first plate electrode other end and the second plate electrode other end stretch out respectively between base plate and the plastic-sealed body, the heating panel is installed at first plate electrode and second plate electrode top, the heating panel top is equipped with the heat dissipation net, heat dissipation net center is equipped with the mounting groove, install the chip in the mounting groove, the chip passes through the wire and is connected with first plate electrode one end and second plate electrode one end electricity respectively. The heat that the chip produced can transmit on the heating panel, then transmits on the heat dissipation net and distributes away from the plastic packaging body through the heating panel, and heat radiating area is big, therefore the radiating effect is good, can improve SMT diode packaging structure's life.
Description
Technical Field
The utility model relates to a SMT diode packaging structure especially relates to a SMT diode packaging structure of high heat dissipating ability.
Background
With the development of the fields of mobile information products, household electrical appliance products, green illumination and the like, a great number of important components such as rectifier bridges, diodes, voltage stabilizing tubes and the like are used for matched electronic products, and higher requirements are provided for the light, thin, small and dense components of the products; the high-level ultra-small plastic package structure not only represents the technical level of the industry, but also has important requirements on miniaturization, higher power density, high reliability, high safety and the like of a rear-level product; at present, the rectifier diode product with the largest usage amount in semiconductor components is developed towards the direction of integration, and a rectifier bridge packaging device provided with four diodes is widely applied to some high-end products due to the characteristics of convenience in use and installation, high power density, small occupied PCB area, high reliability and the like. The surface-mounted rectifier bridge is taken as a representative component of the surface-mounted type, and on the basis of miniaturization, most of SMT diode packaging structures on the market nowadays can generate a large amount of heat when the chips work due to structural limitation, and the heat cannot be discharged, so that the temperature of the whole structure rises, and the service life of the SMT diode packaging structure is shortened or even damaged.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome above-mentioned technique not enough, provide a SMT diode packaging structure of high heat dispersion, solve the technical problem in the background art.
In order to achieve the technical purpose, the technical scheme of the utility model a SMT diode packaging structure of high heat dissipating ability is provided, which comprises a substrate, the plastic-sealed body, first plate electrode, the second plate electrode, the heating panel, heat dissipation net, chip and wire, the base plate top is equipped with the plastic-sealed body, first plate electrode one end and second plate electrode one end are established respectively in the both sides between base plate and the plastic-sealed body, the first plate electrode other end and the second plate electrode other end stretch out respectively between base plate and the plastic-sealed body, the heating panel is installed at first plate electrode and second plate electrode top, the heating panel top is equipped with the heat dissipation net, heat dissipation net center is equipped with the mounting groove, install the chip in the mounting groove, the chip passes through the wire and is connected with first plate electrode one end and second plate electrode one end electricity respectively.
The other end of the first electrode plate and the other end of the second electrode plate extend to the bottom of the substrate through two sides of the substrate respectively, a positive electrode is arranged on one side of the first electrode plate, and a negative electrode is arranged on one side of the second electrode plate.
The radiating grid is formed by staggering a plurality of transverse radiating fins arranged at equal intervals and a plurality of longitudinal radiating fins arranged at equal intervals.
The two sides and the top of the transverse radiating fins and the longitudinal radiating fins extend to the outside of the plastic package body.
A flexible heat conducting pad is installed in the installation groove, a groove is formed in the flexible heat conducting pad, and the chip is arranged in the groove.
The flexible heat conducting pad is a flexible silica gel pad.
An insulating pad is arranged between the heat dissipation plate and one end of the first electrode plate and one end of the second electrode plate.
The insulating pad is an insulating rubber pad.
The beneficial effects of the utility model include:
1. the heat generated by the chip can be transferred to the heat dissipation plate, then transferred to the heat dissipation grid through the heat dissipation plate and dissipated from the plastic package body, and the heat dissipation area is large, so that the heat dissipation effect is good, and the service life of the SMT diode packaging structure can be prolonged;
2. the heat dissipation grid is formed by staggering a plurality of transverse radiating fins arranged at equal intervals and a plurality of longitudinal radiating fins arranged at equal intervals, the two sides and the tops of the transverse radiating fins and the longitudinal radiating fins extend to the outside of the plastic package body, and the heat in the plastic package body can be dissipated more effectively and quickly by extending the two sides and the tops of the transverse radiating fins and the longitudinal radiating fins to the outside of the plastic package body;
3. install flexible heat conduction pad in the mounting groove, be equipped with the recess in the flexible heat conduction pad, the chip is established in the recess, the bottom and the lateral wall of flexible heat conduction pad respectively with heating panel top and heat dissipation net butt, chip bottom and lateral wall respectively with flexible heat conduction pad in top and the inside wall butt, flexible heat conduction pad can improve between heating panel and the chip and the heat conductivity between heat dissipation net and the chip, thereby can effectively go up the heat transfer to heating panel and heat dissipation net on the chip more fast, can further improve the radiating efficiency.
Drawings
Fig. 1 is a longitudinal sectional view of an SMT diode package structure with high heat dissipation performance according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of an SMT diode package structure with high heat dissipation performance according to an embodiment of the present invention;
in the figure: 1. a substrate; 2. a plastic package body; 3. a first electrode plate; 31. a positive electrode; 32. a negative electrode; 4. a second electrode plate; 5. a heat dissipation plate; 6. a heat dissipation grid; 61. mounting grooves; 62. a transverse wire heat sink; 63. a longitudinal heat sink; 7. a chip; 8. a wire; 9. a flexible thermally conductive pad; 91. a groove; 10. an insulating pad.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention.
As shown in fig. 1-2, the utility model provides a high heat dissipating SMT diode packaging structure, including base plate 1, plastic-sealed body 2, first plate electrode 3, second plate electrode 4, heating panel 5, heat dissipation net 6, chip 7 and wire 8, base plate 1 top is equipped with plastic-sealed body 2, the both sides between base plate 1 and plastic-sealed body 2 are established respectively to first plate electrode 3 one end and second plate electrode 4 one end, the first plate electrode 3 other end and the second plate electrode 4 other end stretch out respectively between base plate 1 and the plastic-sealed body 2, heating panel 5 is installed at first plate electrode 3 and second plate electrode 4 top, heating panel 5 top is equipped with heat dissipation net 6, heat dissipation net 6 center is equipped with mounting groove 61, install chip 7 in mounting groove 61, chip 7 bottom is connected with heating panel 5 top, chip 7 lateral wall is connected with heat dissipation net 6, chip 7 passes through wire 8 and is connected with first plate electrode 3 one end and second plate electrode 4 one end electricity respectively.
The heat generated by the chip 7 can be transferred to the heat dissipation plate 5, and then transferred to the heat dissipation grid 6 through the heat dissipation plate 5 and dissipated from the plastic package body 2, so that the heat dissipation area is large, the heat dissipation effect is good, and the service life of the SMT diode packaging structure can be prolonged.
The plastic package body 2 has a rectangular parallelepiped shape.
More specifically, the other end of the first electrode plate 3 and the other end of the second electrode plate 4 extend to the bottom of the substrate 1 through both sides of the substrate 1, respectively, the positive electrode 31 is disposed on one side of the first electrode plate 3, and the negative electrode 41 is disposed on one side of the second electrode plate 4.
More specifically, the heat dissipation grid 6 is formed by a plurality of equidistantly arranged transverse fins 62 and a plurality of equidistantly arranged longitudinal fins 63 which are arranged in a staggered manner. The heat dissipation grid 6 adopting the design is simple in structure and good in heat dissipation effect.
Note that both sides and the top of the transverse fins 62 and the longitudinal fins 63 extend to the outside of the plastic package body 2. By extending both sides and the top of the transverse radiating fins 62 and the longitudinal radiating fins 63 to the outside of the plastic package body 2, heat in the plastic package body 2 can be dissipated more effectively and rapidly.
Preferably, a flexible heat conducting pad 9 is installed in the installation groove 61, a groove 91 is formed in the flexible heat conducting pad 9, and the chip 7 is arranged in the groove 91. The bottom and the lateral wall of flexible heat conduction pad 9 respectively with 5 tops of heating panel and 6 butts of heat dissipation net, chip 7 bottom and lateral wall respectively with flexible heat conduction pad 9 in top and the inside wall butt, flexible heat conduction pad 9 can improve between chip 7 and heating panel 5 and chip 7 and the heat conductivity between heat dissipation net 6 and the chip 7, thereby can be more effective with on chip 7 heat transfer to heating panel 5 and heat dissipation net 6 on, can further improve the radiating efficiency.
In this embodiment, the flexible heat conducting pad 9 is a flexible silica gel pad.
For the flexible heat conducting pad 9, it only needs to be satisfied that the heat conductivity between the chip 7 and the heat dissipation plate 5 and the chip 7 and between the heat dissipation grid 6 and the chip 7 can be improved, and therefore, it is not limited to the form of using the flexible silicone pad, for example, in other embodiments, the flexible heat conducting pad 9 is a heat conducting member such as a flexible graphene pad which can improve the heat conductivity between the chip 7 and the heat dissipation plate 5 and the chip 7 and between the heat dissipation grid 6 and the chip 7.
Preferably, an insulating pad 10 is disposed between the heat dissipation plate 5 and one end of the first electrode plate 3 and one end of the second electrode plate 4, and the insulating pad 10 can prevent the heat dissipation plate 5 from being electrically conductive with the first electrode plate 3 and the second electrode plate 4, so that the SMT diode packaging structure can be prevented from being affected when in use.
In this embodiment, the insulating pad 10 is an insulating rubber pad.
As for the insulating pad 10, it is only necessary to satisfy the requirement of avoiding the electric conduction between the heat dissipation plate 5 and the first and second electrode plates 3 and 4, and therefore, it is not limited to the form of using an insulating rubber pad, for example, in other embodiments, the insulating pad 10 is a polyvinyl chloride pad or the like to avoid the electric conduction between the heat dissipation plate 5 and the first and second electrode plates 3 and 4.
The beneficial effects of the utility model include: the heat generated by the chip 7 can be transferred to the heat dissipation plate 5, then transferred to the heat dissipation grid 6 through the heat dissipation plate 5 and dissipated from the plastic package body 2, and the heat dissipation area is large, so that the heat dissipation effect is good, and the service life of the SMT diode packaging structure can be prolonged; the heat dissipation grid 6 is formed by staggering a plurality of transverse heat dissipation fins 62 arranged at equal intervals and a plurality of longitudinal heat dissipation fins 63 arranged at equal intervals, and both sides and tops of the transverse heat dissipation fins 62 and the longitudinal heat dissipation fins 63 extend to the outside of the plastic package body 2. The two sides and the top of the transverse radiating fins 62 and the longitudinal radiating fins 63 extend to the outside of the plastic package body 2, so that heat in the plastic package body 2 can be effectively and quickly radiated; install flexible heat conduction pad 9 in the mounting groove 61, be equipped with recess 91 in the flexible heat conduction pad 9, chip 7 is established in recess 91. The bottom and the lateral wall of flexible heat conduction pad 9 respectively with 5 tops of heating panel and 6 butts of heat dissipation net, chip 7 bottom and lateral wall respectively with flexible heat conduction pad 9 in top and the inside wall butt, flexible heat conduction pad 9 can improve between heating panel 5 and the chip 7 and between heat dissipation net 6 and the chip 7 the heat conductivity, thereby can be more effectively with chip 7 go up heat transfer to heating panel 5 and heat dissipation net 6 on, can further improve the radiating efficiency.
The above description is intended to illustrate the embodiments of the present invention, and not to limit the scope of the invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the scope of the claims of the present invention.
Claims (8)
1. The utility model provides a SMT diode packaging structure of high heat dissipating ability, its characterized in that, including base plate, plastic-sealed body, first plate electrode, second plate electrode, heating panel, heat dissipation net, chip and wire, the base plate top is equipped with the plastic-sealed body, both sides between base plate and plastic-sealed body are established respectively to first plate electrode one end and second plate electrode one end, the first plate electrode other end and the second plate electrode other end stretch out respectively between base plate and the plastic-sealed body, the heating panel is installed at first plate electrode and second plate electrode top, the heating panel top is equipped with the heat dissipation net, heat dissipation net center is equipped with the mounting groove, install the chip in the mounting groove, the chip passes through the wire and is connected with first plate electrode one end and second plate electrode one end electricity respectively.
2. An SMT diode package structure with high heat dissipation performance according to claim 1, wherein the other end of the first electrode plate and the other end of the second electrode plate extend to the bottom of the substrate through two sides of the substrate, respectively, a positive electrode is disposed on one side of the first electrode plate, and a negative electrode is disposed on one side of the second electrode plate.
3. An SMT diode package structure according to claim 1, wherein the heat dissipation grid is formed by a plurality of equidistantly disposed transverse fins and a plurality of equidistantly disposed longitudinal fins that are staggered.
4. A high heat dissipation SMT diode package structure according to claim 3, wherein the lateral heat spreader and the longitudinal heat spreader both sides and top extend outside the plastic package body.
5. An SMT diode packaging structure with high heat dissipation performance according to claim 1, wherein a flexible heat conducting pad is mounted in the mounting groove, a groove is formed in the flexible heat conducting pad, and the chip is arranged in the groove.
6. An SMT diode package structure with high heat dissipation performance according to claim 5, wherein the flexible thermal pads are flexible silicone pads.
7. An SMT diode package structure with high heat dissipation performance according to claim 1, wherein an insulating pad is disposed between the heat spreader and one end of the first electrode plate and one end of the second electrode plate.
8. An SMT diode package structure with high heat dissipation performance according to claim 7, wherein the insulating pad is an insulating rubber pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222635891.0U CN218274577U (en) | 2022-09-30 | 2022-09-30 | SMT diode packaging structure with high heat dissipation performance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222635891.0U CN218274577U (en) | 2022-09-30 | 2022-09-30 | SMT diode packaging structure with high heat dissipation performance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218274577U true CN218274577U (en) | 2023-01-10 |
Family
ID=84750413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222635891.0U Active CN218274577U (en) | 2022-09-30 | 2022-09-30 | SMT diode packaging structure with high heat dissipation performance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218274577U (en) |
-
2022
- 2022-09-30 CN CN202222635891.0U patent/CN218274577U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20110180841A1 (en) | Alternating current driven light emitting diode | |
| WO2009094829A1 (en) | A high heat dissipation led light source module and a high heat dissipation and high power led light source assembly | |
| KR101430602B1 (en) | Light emitting diode module | |
| US7986079B2 (en) | Light emitting diode lamp | |
| US20160308106A1 (en) | Floating heat sink support with copper sheets and led package assembly for led flip chip package | |
| CN207298874U (en) | A kind of radiator of high efficiency long service LED energy-saving lamps | |
| CN218274577U (en) | SMT diode packaging structure with high heat dissipation performance | |
| CN209785918U (en) | SMD triode | |
| KR101059071B1 (en) | Printed circuit board for LED mounting | |
| CN212587482U (en) | Semiconductor product with top heat dissipation function and electronic product | |
| CN212587483U (en) | High-heat-dissipation semiconductor product and electronic product | |
| CN210866172U (en) | High-power thermoelectric separation type LED device and LED light source module | |
| KR101208073B1 (en) | LED module | |
| CN211980603U (en) | Semiconductor product and electronic product with bottom surface heat dissipation plate | |
| CN212587495U (en) | Semiconductor product electric connection structure and electronic product | |
| CN214176014U (en) | Radiator of power element | |
| CN219959039U (en) | Device for improving heat dissipation of high-power LED chip based on COB packaging | |
| CN212625630U (en) | High-performance diode packaging device | |
| CN210073826U (en) | High-reliability gallium nitride power device | |
| CN213818779U (en) | Electrostatic suppressor for preventing electrostatic interference | |
| CN219938795U (en) | Radiator for electronic equipment | |
| CN211980602U (en) | High-heat-dissipation semiconductor product with bottom heat dissipation plate and electronic product | |
| CN218243947U (en) | Heat radiation structure for flat surface-mounted packaged power device and electronic circuit thereof | |
| CN213583756U (en) | Electronic chip packaging structure | |
| CN210956670U (en) | LED lamp bead |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |