CN214176014U - Radiator of power element - Google Patents
Radiator of power element Download PDFInfo
- Publication number
- CN214176014U CN214176014U CN202023171956.8U CN202023171956U CN214176014U CN 214176014 U CN214176014 U CN 214176014U CN 202023171956 U CN202023171956 U CN 202023171956U CN 214176014 U CN214176014 U CN 214176014U
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- heat
- radiator
- power element
- fin group
- heat sink
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Abstract
The utility model provides a power component's radiator, it is including first radiator and the second radiator that is located the power component both sides respectively, the second radiator includes first radiating fin group, first radiating fin group is located power component's top and contacts with first radiator, the lower part of second radiator is equipped with the fixed component that is used for being connected with power component. The first radiating fin group is positioned on the inner side of the second radiator. The technical scheme of the utility model, adopt two-sided radiating structural design, the two sides can both dispel the heat fast, especially can effectually accelerate the heat dissipation of the plastic encapsulation side like power components such as IGBT to reach the purpose that reduces the component temperature, make IGBT's reliability better. Additionally, the utility model discloses a structure simple to operate of radiator can also reduce the process of IGBT set screw, can improve production efficiency.
Description
Technical Field
The utility model relates to an electronic components heat dissipation technical field especially relates to a power element's radiator.
Background
When operating, power components such as IGBTs generate a large amount of heat, which raises the temperature of the chip. If the IGBT heat dissipation problem is not well addressed, the chip temperature may rise above the maximum allowed IGBT junction temperature, resulting in device performance degradation or failure. The conventional IGBT radiator scheme adopts a single-side radiator, and a large amount of heat accumulation can occur on the plastic packaging side of the IGBT in such a way, so that the temperature can be increased on the side, and the effect of the IGBT in the working process is influenced.
SUMMERY OF THE UTILITY MODEL
To the technical problem, the utility model discloses a power component's radiator effectively accelerates the plastic encapsulation side heat dissipation like power components such as IGBT.
To this end, the technical scheme of the utility model is that:
a radiator of a power element comprises a first radiator and a second radiator which are respectively positioned on two sides of the power element, wherein the second radiator comprises a first radiating fin group, the first radiating fin group is positioned above the power element and is in contact with the first radiator, and a fixing component used for being connected with the power element is arranged at the lower part of the second radiator. The first radiating fin group is positioned on the inner side of the second radiator.
By adopting the technical scheme, the heat dissipation effect of power elements such as IGBT is better and the working reliability of the power elements is improved by a double-side heat dissipation mode. In addition, the second radiator and the power element are connected through the fixing component, and meanwhile, the first radiating fin group of the second radiator is located above the power element and is in contact with the first radiator, so that the second radiator can be used for forming a supporting structure with the first radiator, and damage to the power element caused by excessive force applied when the power element is fixed is avoided.
As a further improvement of the present invention, the second heat sink is provided with a second heat dissipating fin group, and the second heat dissipating fin group is located outside the second heat sink.
As a further improvement of the present invention, the outside of the first heat sink is provided with heat dissipating fins.
As a further improvement of the present invention, the second heat sink is provided with a heat conductive silicone layer or a heat conductive silicone pad on a surface contacting the power element. By adopting the technical scheme, the air gap between the power element and the second radiator can be filled, and the heat dissipation effect of the power element can be better enhanced.
As a further improvement of the present invention, the first heat sink is provided with a heat conductive insulating spacer on a surface contacting the power element. Furthermore, the heat-conducting insulating gasket is made of ceramic. By adopting the technical scheme, the heat dissipation structure has a better heat dissipation effect and can play a good insulating property.
As a further improvement of the present invention, the heat conducting insulating spacer is made of aluminum oxide or aluminum nitride.
As a further improvement, a heat-conducting silicone grease layer or a heat-conducting silicone pad is arranged between the heat-conducting insulating gasket and the first radiator.
As a further improvement, the surface of the heat-conducting insulating pad is provided with a heat-conducting silicone grease layer or a heat-conducting silicone rubber pad. By adopting the technical scheme, the air gap between the power element and the first radiator can be filled, and the heat dissipation effect of the power element can be better enhanced.
As a further improvement, the bottom of the first radiator is provided with an insulating pad foot, and the insulating pad foot is connected with the PCB board through a fastener.
As a further improvement of the present invention, the bottom of the second heat sink is located above the power element pin.
As a further improvement of the present invention, the second heat dissipating fin group is provided with a notch at a position located at the fixing member. By adopting the technical scheme, the power element is conveniently fixed on the second radiator, and compared with the prior art, the power element can be firmly fixed by fewer fixing pieces.
As a further improvement of the present invention, the fixing member is a screw.
Compared with the prior art, the beneficial effects of the utility model are that:
the technical scheme of the utility model, adopt the radiating structural design of two-sided, both sides can both dispel the heat fast, especially can effectually accelerate the heat dissipation of the plastic encapsulation side like power component such as IGBT to reach the purpose that reduces the component temperature, make power component such as IGBT's reliability better. Additionally, the utility model discloses a structure simple to operate of radiator can also reduce the process of IGBT set screw, can improve production efficiency.
Drawings
Fig. 1 is a schematic diagram of a heat sink mounting structure of an IGBT power element according to the present invention.
Fig. 2 is a schematic side view of the heat sink of the IGBT power device according to the present invention after being mounted.
The reference numerals include:
1-a first radiator, 2-a second radiator, 3-a heat-conducting insulating gasket, 4-a heat-conducting silicone grease layer, 5-an IGBT power element, 6-pins, 7-screws and 8-a PCB; 11-insulating foot pads;
21-a first radiating fin group, 22-a second radiating fin group, 23-a fixing member and 24-a notch.
Detailed Description
Preferred embodiments of the present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 1 and fig. 2, a heat sink for an IGBT power element includes a first heat sink 1 and a second heat sink 2 respectively located at two sides of an IGBT power element 5, where the second heat sink 2 includes a first heat fin group 21 and a second heat fin group 22, the first heat fin group 21 is located above the IGBT power element 5 and contacts with the first heat sink 1, and a fixing member 23 for connecting with the IGBT power element is disposed at a lower portion of the second heat sink 2. The pins of the IGBT power element 5 are connected with the PCB 8. The bottom of the second heat sink 2 is located above the pin 6 of the IGBT power element 5. The first heat sink fin group 21 is located inside the second heat sink 2. The second heat sink fin group 22 is located outside the second heat sink 2. And the outer side of the first radiator 1 is provided with radiating fins.
The second radiator 2 is provided with a heat-conducting silicone grease layer 4 or a heat-conducting silicone pad on the surface contacting with the IGBT power element 5. The first heat sink 1 is provided with a heat conductive insulating spacer 3 on a surface contacting the IGBT power element 5. Further, the material of the heat-conducting insulating pad 3 is aluminum oxide or aluminum nitride. And a heat-conducting silicone grease layer 4 or a heat-conducting silicone pad is arranged between the heat-conducting insulating gasket 3 and the first radiator 2. And a heat-conducting silicone grease layer 4 or a heat-conducting silicone pad is arranged on the surface of the heat-conducting insulating gasket 3, which is in contact with the IGBT power element 5.
The bottom of the first radiator 1 is provided with an insulating pad 11, and the insulating pad 11 is connected with the PCB 8 through a screw 7. The second heat dissipating fin group 22 is provided with a gap 24 at the position of the fixing member 23, so that the IGBT power element 5 is conveniently fixed by the fixing member 23. Further preferably, the fixing member 23 is a screw.
By adopting the technical scheme, the heat dissipation effect of the IGBT power element is better and the working reliability of the IGBT power element is improved in a two-side heat dissipation mode. In addition, the second radiator is connected with the IGBT power element through the fixing component, meanwhile, the first radiating fin group of the second radiator is located above the IGBT power element and is in contact with the first radiator, the second radiator can be used for forming a supporting structure with the first radiator, damage to the IGBT power element caused by excessive force applied when the IGBT power element is fixed is avoided, and better heat dissipation can be carried out on the IGBT power element.
The above-mentioned embodiments are the preferred embodiments of the present invention, and the scope of the present invention is not limited to the above-mentioned embodiments, and the scope of the present invention includes and is not limited to the above-mentioned embodiments, and all equivalent changes made according to the shape and structure of the present invention are within the protection scope of the present invention.
Claims (10)
1. A heat sink for a power component, comprising: the power element heat dissipation device comprises a first heat radiator and a second heat radiator, wherein the first heat radiator and the second heat radiator are respectively positioned on two sides of a power element, the second heat radiator comprises a first heat radiation fin group, the first heat radiation fin group is positioned above the power element and is in contact with the first heat radiator, and a fixing component used for being connected with the power element is arranged at the lower part of the second heat radiator; the first radiating fin group is positioned on the inner side of the second radiator.
2. The heat sink of claim 1, wherein: the second radiator is provided with a second radiating fin group, and the second radiating fin group is positioned on the outer side of the second radiator.
3. The heat sink of claim 2, wherein: the first radiator is provided with a heat conduction insulating gasket on the surface contacting with the power element.
4. The heat sink of claim 3, wherein: the heat-conducting insulating gasket is made of aluminum oxide or aluminum nitride.
5. The heat sink of claim 3, wherein: a heat-conducting silicone grease layer or a heat-conducting silicone pad is arranged between the heat-conducting insulating gasket and the first radiator; and the second radiator is provided with a heat-conducting silicone grease layer or a heat-conducting silicone pad on the surface contacted with the power element.
6. The heat sink of claim 5, wherein: and a heat-conducting silicone grease layer or a heat-conducting silicone rubber pad is arranged on the surface of the heat-conducting insulating gasket.
7. The heat sink of claim 6, wherein: the bottom of the first radiator is provided with an insulating pad foot, and the insulating pad foot is connected with the PCB through a fastener.
8. The heat sink of claim 2, wherein: the bottom of the second heat sink is positioned above the power element pins.
9. The heat sink of claim 8, wherein: the second radiating fin group is provided with a notch at the position of the fixing component.
10. The heat sink for power device as claimed in any one of claims 1 to 9, wherein: the fixing member is a screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023171956.8U CN214176014U (en) | 2020-12-24 | 2020-12-24 | Radiator of power element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023171956.8U CN214176014U (en) | 2020-12-24 | 2020-12-24 | Radiator of power element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214176014U true CN214176014U (en) | 2021-09-10 |
Family
ID=77608845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023171956.8U Active CN214176014U (en) | 2020-12-24 | 2020-12-24 | Radiator of power element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214176014U (en) |
-
2020
- 2020-12-24 CN CN202023171956.8U patent/CN214176014U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230919 Address after: 518000 rooms 401 and 402, 4th floor, building 1, software park, kejizhong 2nd Road, Gaoxin North District, Nanshan District, Shenzhen City, Guangdong Province (office only) Patentee after: SHENZHEN KSTAR SCIENCE AND TECHNOLOGY Co.,Ltd. Address before: 518000 rooms 401 and 402, 4th floor, building 1, software park, kejizhong 2nd Road, Gaoxin North District, Nanshan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN KSTAR SCIENCE AND TECHNOLOGY Co.,Ltd. Patentee before: Guangdong Youdian New Energy Technology Co.,Ltd. |
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| TR01 | Transfer of patent right |