CN218146932U - 层叠体的制造系统、层叠体以及半导体装置 - Google Patents
层叠体的制造系统、层叠体以及半导体装置 Download PDFInfo
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- CN218146932U CN218146932U CN202220709419.4U CN202220709419U CN218146932U CN 218146932 U CN218146932 U CN 218146932U CN 202220709419 U CN202220709419 U CN 202220709419U CN 218146932 U CN218146932 U CN 218146932U
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- H—ELECTRICITY
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
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- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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| CN202280026055.2A Pending CN117098879A (zh) | 2021-04-07 | 2022-03-30 | 层叠体的制造方法、层叠体的制造装置、层叠体以及半导体装置 |
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| EP2121242B1 (en) * | 2006-12-28 | 2012-02-15 | Saint-Gobain Ceramics & Plastics, Inc. | Method of grinding a sapphire substrate |
| US20110049779A1 (en) * | 2009-08-28 | 2011-03-03 | Applied Materials, Inc. | Substrate carrier design for improved photoluminescence uniformity |
| US9564320B2 (en) * | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
| JP5524758B2 (ja) * | 2010-08-03 | 2014-06-18 | 国立大学法人東京農工大学 | 結晶成長装置 |
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| JP5904101B2 (ja) * | 2012-11-22 | 2016-04-13 | 豊田合成株式会社 | 化合物半導体の製造装置およびウェハ保持体 |
| WO2014091968A1 (ja) * | 2012-12-14 | 2014-06-19 | 日本碍子株式会社 | 単結晶製造方法、及び当該方法によって製造される単結晶 |
| EP2927934B1 (en) * | 2014-03-31 | 2017-07-05 | Flosfia Inc. | Crystalline multilayer structure and semiconductor device |
| EP2933825B1 (en) * | 2014-03-31 | 2017-07-05 | Flosfia Inc. | Crystalline multilayer structure and semiconductor device |
| CN115714130A (zh) * | 2016-12-05 | 2023-02-24 | 环球晶圆股份有限公司 | 高电阻率绝缘体上硅结构及其制造方法 |
| CN110785682B (zh) * | 2017-05-24 | 2022-08-26 | 斯伦贝谢技术有限公司 | 对井下多维测量结果的快速测量和解释 |
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| JP6784871B1 (ja) * | 2019-04-24 | 2020-11-11 | 日本碍子株式会社 | 半導体膜 |
| JP7681039B2 (ja) * | 2020-10-08 | 2025-05-21 | 日本碍子株式会社 | 酸化ガリウム単結晶粒子及びその製法 |
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