CN217691180U - 镓系氧化物半导体膜及其成膜系统、半导体装置 - Google Patents

镓系氧化物半导体膜及其成膜系统、半导体装置 Download PDF

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CN217691180U
CN217691180U CN202220507104.1U CN202220507104U CN217691180U CN 217691180 U CN217691180 U CN 217691180U CN 202220507104 U CN202220507104 U CN 202220507104U CN 217691180 U CN217691180 U CN 217691180U
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film
substrate
nozzle
gallium
oxide semiconductor
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坂爪崇寛
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Shin Etsu Chemical Co Ltd
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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  • Insulated Gate Type Field-Effect Transistor (AREA)
CN202220507104.1U 2021-03-12 2022-03-09 镓系氧化物半导体膜及其成膜系统、半导体装置 Active CN217691180U (zh)

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US (1) US20240234138A9 (https=)
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JPS5397794U (https=) 1977-01-12 1978-08-08
JP2671367B2 (ja) 1988-04-06 1997-10-29 富士通株式会社 気相エピタキシャル成長装置
JP5124760B2 (ja) 2004-04-19 2013-01-23 静雄 藤田 成膜方法及び成膜装置
JP2012046772A (ja) 2010-08-24 2012-03-08 Sharp Corp ミストｃｖｄ装置及びミスト発生方法
JP6137668B2 (ja) 2012-08-26 2017-05-31 国立大学法人 熊本大学 酸化亜鉛結晶層の製造方法及びミスト化学気相成長装置
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
JP5397794B1 (ja) 2013-06-04 2014-01-22 Ｒｏｃａ株式会社 酸化物結晶薄膜の製造方法
CN109423694B (zh) * 2017-08-21 2022-09-09 株式会社Flosfia 结晶膜、包括结晶膜的半导体装置以及制造结晶膜的方法
JP7315137B2 (ja) * 2018-12-26 2023-07-26 株式会社Flosfia 結晶性酸化物膜
WO2020217563A1 (ja) * 2019-04-24 2020-10-29 日本碍子株式会社 半導体膜
JP7409790B2 (ja) * 2019-06-20 2024-01-09 信越化学工業株式会社 酸化物半導体膜及び半導体装置
WO2020261355A1 (ja) 2019-06-25 2020-12-30 日本碍子株式会社 半導体膜
WO2020261574A1 (ja) * 2019-06-28 2020-12-30 日本碍子株式会社 半導体膜
TWI849160B (zh) * 2019-06-28 2024-07-21 日商Ｆｌｏｓｆｉａ股份有限公司 蝕刻處理方法和半導體裝置的製造方法
JP7410159B2 (ja) * 2019-09-11 2024-01-09 日本碍子株式会社 半導体膜
CN116018260B (zh) * 2020-09-24 2025-08-05 日本碍子株式会社 层叠结构体

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TWM634737U (zh) 2022-12-01
US20240136179A1 (en) 2024-04-25
JP7719165B2 (ja) 2025-08-05
EP4306676A4 (en) 2025-02-19
WO2022191230A1 (ja) 2022-09-15
JPWO2022191230A1 (https=) 2022-09-15
US20240234138A9 (en) 2024-07-11
JP2025116201A (ja) 2025-08-07
TW202235664A (zh) 2022-09-16
KR20230155442A (ko) 2023-11-10
EP4306676A1 (en) 2024-01-17

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