CN216648300U

CN216648300U - Integrated photoelectric detection sensor and electronic equipment

Info

Publication number: CN216648300U
Application number: CN202122495466.1U
Authority: CN
Inventors: 刘丽铭; 申崇渝; 刘国旭
Original assignee: Beijing Yimei New Technology Co ltd
Current assignee: Beijing Yimei New Technology Co ltd
Priority date: 2021-10-15
Filing date: 2021-10-15
Publication date: 2022-05-31
Anticipated expiration: 2031-10-15

Abstract

The utility model relates to the technical field of semiconductors, and provides an integrated photoelectric detection sensor and electronic equipment. The photoelectric detection sensor comprises a substrate, wherein the upper surface of the substrate is provided with a first mounting position and a second mounting position, a light emitting unit is fixed on the first mounting position, and a light signal receiving unit is fixed on the second mounting position; the first light avoiding body is covered on the first installation position, the top end of the first light avoiding body is provided with a first opening, and colloid can be injected into the inner area of the first light avoiding body through the first opening to form a first protective adhesive layer; the second light avoiding body is covered on the second installation position, the top end of the second light avoiding body is provided with a second opening, and colloid can be injected into the inner area of the second light avoiding body through the second opening to form a second protective adhesive layer; the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the optical signal receiving unit and allow the optical signal of the light emitting unit to pass through; the light avoiding part of the first light avoiding body and the light avoiding part of the second light avoiding body are used for preventing the light signal of the light emitting unit from passing through.

Description

Integrated photoelectric detection sensor and electronic equipment

Technical Field

The present invention relates to the field of semiconductor technology, and more particularly, to an integrated photodetection sensor and electronic device.

Background

With the rapid development of science and technology, the application of photoelectric reflection sensors is becoming more and more extensive, for example, heart rate detection and blood oxygen detection in the aspect of medical treatment, and the application of distance approach detection function to service robots in various fields (such as sweeping robots, logistics robots, contactless delivery robots, AGV unmanned transfer robots, etc.). For a remote detection sensor, a light emitting chip and a light signal receiving chip can be generally packaged separately, but with the development trend of integration and miniaturization, the existing integrated photoelectric detection sensor is easy to have the problems of transverse crosstalk of internal signals, detection misjudgment and the like.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide an integrated photoelectric detection sensor and an electronic device, which are used for solving the problem that the integrated photoelectric detection sensor in the prior art is easy to generate internal signal crosstalk.

In order to achieve the purpose, the utility model adopts the technical scheme that:

in a first aspect, the present invention provides an integrated photodetection sensor, comprising:

the optical signal transmission device comprises a substrate, wherein a first mounting position and a second mounting position are arranged on the upper surface of the substrate, a light emitting unit is fixed on the first mounting position, and an optical signal receiving unit is fixed on the second mounting position;

the substrate is further provided with:

the first light avoiding body is covered on the first installation position, a first opening is formed in the top end of the first light avoiding body, and colloid can be injected into the inner area of the first light avoiding body through the first opening to form a first protective adhesive layer;

the second light avoiding body is covered on the second installation position, a second opening is formed in the top end of the second light avoiding body, and colloid can be injected into the inner area of the second light avoiding body through the second opening to form a second protective adhesive layer;

the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the optical signal receiving unit and allow the optical signal of the light emitting unit to pass through; the light avoiding part of the first light avoiding body and the light avoiding part of the second light avoiding body are used for preventing the optical signal of the light emitting unit from passing through.

In one embodiment, the light-shielding portion of the first light-shielding body is fixed on the substrate, and forms a first accommodating cavity for accommodating the light emitting unit with the substrate, so that the glue can be injected into the first accommodating cavity to form a first protective glue layer;

the light-avoiding part of the second light-avoiding body is fixed on the substrate and forms a second accommodating cavity for accommodating the optical signal receiving unit with the substrate, so that the colloid can be injected into the second accommodating cavity to form a second protective adhesive layer.

In one embodiment, the first light-shielding body and the second light-shielding body respectively form a bowl-cup structure with the substrate, and the light-shielding part of the first light-shielding body and the light-shielding part of the second light-shielding body are both set to be black.

In one embodiment, the light shielding part of the first light shielding body comprises a first light shielding part, a second light shielding part, a third light shielding part and a fourth light shielding part, and the first light shielding part, the second light shielding part, the third light shielding part and the fourth light shielding part surround the optical signal receiving unit to form a rectangular area with openings at the upper end and the lower end;

the light shading part of the second light shading body comprises a fifth light shading part, a sixth light shading part, a seventh light shading part and an eighth light shading part, and the fifth light shading part, the sixth light shading part, the seventh light shading part and the eighth light shading part surround the optical signal receiving unit to form a rectangular area with openings at the upper end and the lower end.

In one embodiment, an ambient light filtering material or a band-pass material is mixed in each of the first protective adhesive layer and the second protective adhesive layer, the ambient light filtering material is used for filtering optical signals which can generate interference in the external environment of the photodetection sensor, and the band-pass material is capable of allowing light of a specific waveband to pass through.

In one embodiment, the upper surface of the substrate is covered with a third protective adhesive layer, and the third protective adhesive layer covers the first light avoiding body and the second light avoiding body;

wherein the third protective adhesive layer allows the optical signal of the light emitting unit to pass through.

In one embodiment, the light-shielding portion of the first light-shielding body and the light-shielding portion of the second light-shielding body are made of black materials.

In one embodiment, the upper surface of the substrate is provided with a first conductive potential, a first conductive connection site and a second conductive potential, a second conductive connection site, the first mounting site is arranged at the first conductive potential, and the second mounting site is arranged at the second conductive potential;

the light emitting unit at the first installation position is communicated with the first conductive connection position through a first conductive wire, and the light signal receiving unit at the second installation position is communicated with the second conductive connection position through a second conductive wire.

In one embodiment, the lower surface of the substrate is provided with a third conducting potential, a third conducting connection site, a fourth conducting potential and a fourth conducting connection site which are respectively in one-to-one correspondence with the first conducting potential, the first conducting connection site, the second conducting potential and the second conducting connection site;

and a first through hole for connecting the first conductive potential and the third conductive potential, a second through hole for connecting the first conductive connecting position and the third conductive connecting position, a third through hole for connecting the second conductive connecting position and the fourth conductive connecting position and a fourth through hole for connecting the second conductive connecting position and the fourth conductive connecting position are respectively arranged on two sides of the substrate.

In a second aspect, the present invention provides an electronic device comprising the integrated photodetection sensor described above.

The integrated photoelectric detection sensor provided by the utility model has the beneficial effects that:

(1) according to the photoelectric detection sensor provided by the embodiment of the utility model, the first shielding cover and the second shielding cover are arranged on the substrate, and the light-avoiding parts of the first light-avoiding body and the second light-avoiding body are used for preventing light signals of the light-emitting unit from passing through, so that the transverse crosstalk of internal signals is eliminated or greatly reduced, and the detection accuracy is greatly improved.

(2) The utility model can also prevent the ambient light which can interfere the detection signal from passing through the colloid by mixing various functional materials, such as ambient light filtering materials, in the protective adhesive layer poured on the substrate, thereby further improving the accuracy of the detection result and improving the overall performance of the photoelectric detection sensor.

(3) The photoelectric detection sensor packaging structure is simple, the process implementation mode is flexible and adjustable, and materials used for packaging and the packaging size can be flexibly adjusted.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

Fig. 1 is a schematic overall structure diagram of a photodetection sensor according to an embodiment of the present invention;

fig. 2 is a schematic diagram of a substrate structure of a photodetection sensor according to an embodiment of the present invention;

fig. 3 is a schematic diagram of a substrate structure of a photodetection sensor according to an embodiment of the present invention (the first light-shielding body and the second light-shielding body are omitted in the drawing);

fig. 4 is a main flowchart of a method for manufacturing a photodetection sensor according to an embodiment of the present invention.

Wherein, in the figures, the respective reference numerals:

Detailed Description

In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly or indirectly secured to the other element. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element. The terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positions based on the orientations or positions shown in the drawings, and are for convenience of description only and not to be construed as limiting the technical solution. The terms "first", "second" and "first" are used merely for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features. The meaning of "plurality" is two or more unless specifically limited otherwise.

Referring first to fig. 1, fig. 1 is a schematic view of an overall structure of a photoelectric detection sensor according to an embodiment of the present invention. As shown in fig. 1, the photodetection sensor provided in the present embodiment mainly includes a substrate 1, a first light avoiding body 2, and a second light avoiding body 3.

The upper surface of the substrate 1 is provided with a first mounting position 11 and a second mounting position 12, the first mounting position 11 is fixed with the light emitting unit 100, and the second mounting position is fixed with the light signal receiving unit 200. As an example, the light Emitting unit 100 may be an LED or a VCSEL (Vertical Cavity Surface Emitting Laser), the chip structure may be Vertical or flip chip, and the chip structure may be an infrared Emitting chip or a green Emitting chip according to different applications, but is not limited to these types of chips, and those skilled in the art may select different bands and different types of chips according to actual applications, and this embodiment is not limited to this. The optical signal receiving unit 200 may be a photodiode or a phototransistor, but is not limited to the photodiode or the phototransistor, and may also be a dedicated ASIC (Application Specific Integrated Circuit) chip, which can be flexibly selected by those skilled in the art according to actual needs, and the embodiment does not limit the present invention. In addition, in the present embodiment, the substrate 1 may be a square or rectangular parallelepiped having a certain thickness, the upper surface and the lower surface are square or rectangular, that is, the upper surface and the lower surface of the substrate 1 are opposite, the light emitting unit 100 and the light signal receiving unit 200 are disposed on the same surface of the substrate 1 (that is, on the same surface or on the same surface of the lower surface), and since the upper surface and the lower surface of the substrate 1 are opposite, disposing the light emitting unit 100 and the light signal receiving unit 200 on the upper surface of the substrate 1 in the present embodiment does not mean limiting the light emitting unit 100 and the light signal receiving unit 200 on a certain surface of the substrate 1, in other words, disposing the light emitting unit 100 and the light signal receiving unit 200 on the same surface of the substrate 1 in the present embodiment is sufficient. It should be noted that the light emitting unit 100 and the light signal receiving unit 200 of the present embodiment may be fixed on the substrate 1, that is, the light emitting unit 100, the light signal receiving unit 200 and the substrate 1 are two separate components; in addition, the light emitting unit 100 and the light signal receiving unit 200 of the present embodiment can also be directly covered inside the substrate 1, i.e. integrated with the substrate 1.

The first and second

light avoiding bodies

2 and 3 are both disposed on the substrate 1. The shape of the substrate 1 can be flexibly adjusted as required. The first light avoiding body 2 is covered on the first installation position 11, the top end of the first light avoiding body 2 is provided with a first opening, and colloid can be injected into the inner area of the first light avoiding body 2 through the first opening to form a first protective adhesive layer; the second light avoiding body 3 is covered on the second mounting position 12, a second opening is formed in the top end of the second light avoiding body 2, and colloid can be injected into the inner area of the second light avoiding body 3 through the second opening to form a second protective adhesive layer. Wherein the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit 100 and the light signal receiving unit 200, and allow the light signal of the light emitting unit 100 to pass through. The light shielding portion of the first light shielding body 2 and the light shielding portion of the second light shielding body 3 are used for preventing the light signal of the light emitting unit 100 from passing. As an example, the light-shielding portion of the first light-shielding body 2 is fixed on the substrate 1, and forms a first accommodating cavity for accommodating the light-emitting unit 100 with the substrate 1, so that the glue can be injected into the first accommodating cavity to form a first protective glue layer; the light-avoiding part of the second light-avoiding body 3 is fixed on the substrate 1 and forms a second accommodating cavity for accommodating the optical signal receiving unit with the substrate 1, so that the colloid can be injected into the second accommodating cavity to form a second protective adhesive layer.

As an example, the first protective adhesive layer and the second protective adhesive layer are generally transparent silicone or transparent epoxy, but are not limited to transparent silicone or transparent epoxy, and those skilled in the art may also select other materials with similar properties, so that the first protective adhesive layer and the second protective adhesive layer not only can protect the optical transmitting unit 100 and the optical signal receiving unit 200, thereby improving the reliability and stability of the package, but also can allow the optical signal in the wavelength band emitted by the optical transmitting unit 100 to pass through. Optionally, other functional materials, such as an ambient light filtering material or a band-pass material, may be mixed in the first protective adhesive layer and the second protective adhesive layer, wherein the ambient light filtering material functions to prevent ambient light signals that may cause interference from passing through, and the band-pass material allows light of a specific wavelength band to pass through. Therefore, the first protective adhesive layer and the second protective adhesive layer can prevent the ambient light which interferes with the detection signal from passing through the colloid, so that the accuracy of the detection result of the photoelectric detection sensor is improved, and the overall performance of the photoelectric detection sensor is improved. In this embodiment, the functional materials that can be mixed in the first protective adhesive layer and the second protective adhesive layer are not limited to the above two materials, and those skilled in the art can flexibly select other functional materials according to the application requirements, which is not limited in this embodiment.

As an example, referring to fig. 2, fig. 2 is a schematic structural diagram of a substrate of a photodetection sensor according to an embodiment of the present description. As shown in fig. 2, the first and second light-shielding

bodies

2 and 3 respectively form a bowl-cup structure with the substrate 1, and the light-shielding portions of the first and second light-shielding

bodies

2 and 3 may be made of black materials, so as to prevent internal crosstalk caused by light reflection caused by the light-shielding portions. Specifically, the light-avoiding portions of the first light-avoiding body 2 include a first light-avoiding portion 21, a second light-avoiding portion 22, a third light-avoiding portion 23, and a fourth light-avoiding portion 24; the first light avoiding portion 21, the second light avoiding portion 22, the third light avoiding portion 23 and the fourth light avoiding portion 24 surround the light emitting unit 100 to form a rectangular area (as shown in fig. 2) with openings at the upper and lower ends; the light shielding portions of the second light shielding body 3 include a fifth light shielding portion 31, a sixth light shielding portion 32, a seventh light shielding portion 33, and an eighth light shielding portion 34, and the fifth light shielding portion 31, the sixth light shielding portion 32, the seventh light shielding portion 33, and the eighth light shielding portion 34 surround the optical signal receiving unit 200 to form a rectangular area (as shown in fig. 2) with openings at upper and lower ends. It should be noted that the specific forms of the first light-shielding body 2 and the second light-shielding body 3 in this embodiment may be flexibly designed according to practical applications, such as the aforementioned bowl-cup type, rectangular frame, or other forms of structures, and the specific forms of the first light-shielding body 2 and the second light-shielding body 3 are not limited in this embodiment.

Further, the upper surface of the substrate 1 may further cover a third protective adhesive layer, and the third protective adhesive layer covers the first light avoiding body 2 and the second light avoiding body 3; wherein the third protective adhesive layer allows the optical signal of the light emitting unit 100 to pass through. That is, a protective glue layer is also injected into the region of the upper surface of the substrate 1, which is located outside the first light-shielding body 2 and the second light-shielding body 3, so as to further improve the reliability and stability of the package. The hatched area in fig. 1 is the injected protective adhesive layer (including the first protective adhesive layer located in the first light avoiding body 2, the second protective adhesive layer located in the second light avoiding body 3, and the third protective adhesive layer located in the area outside the first light avoiding body 2 and the second light avoiding body 3).

As described above, in the photodetection sensor provided in this embodiment, the first shielding cover 2 and the second shielding cover 3 are disposed on the substrate 1, and the light-shielding portions of the first light-shielding body 2 and the second light-shielding body 3 are used to prevent the optical signal of the light-emitting unit 100 from passing through, so as to eliminate or greatly reduce the lateral crosstalk of the internal signal, thereby greatly improving the accuracy of detection; various functional materials such as an ambient light filtering material can be mixed in the protective adhesive layer poured into the substrate 1, so that ambient light which can interfere with detection signals is prevented from passing through the colloid, the accuracy of detection results is further improved, and the overall performance of the photoelectric detection sensor is improved.

In manufacturing the photodetection sensor of the present embodiment, first, the substrate 1 provided with the first mounting site 11 and the second mounting site 12 is provided. Wherein, be provided with first body 2 and the second body 3 of keeping away from of keeping away on the base plate 1, first body 2 of keeping away is covered and is located first installation position 11, and just first top of keeping away the body 2 has first opening, and second installation position 12 is located to the second body 3 of keeping away cover, and the second top setting of keeping away the body 3 has the second opening. Then, the light emitting unit 100 and the light signal receiving unit 200 are respectively fixed to the first mounting position 11 and the second mounting position 12 of the substrate 1, and then glue is injected to the upper surface of the substrate 1 by using glue injection equipment, so that a protective glue layer is formed on the upper surface of the substrate 1 and the inner areas of the first light avoiding body 2 and the second light avoiding body 3; or glue is injected into the inner areas of the first and second

light avoiding bodies

2 and 3 through the first and second openings by using glue injection equipment, so that a protective glue layer is formed in the inner areas of the first and second

light avoiding bodies

2 and 3. That is, in this embodiment, the protective adhesive layer may be formed only in the inner regions of the first and second light-shielding

bodies

2 and 3, and may be further formed in the outer regions (in the upper surface region of the substrate 1) of the first and second light-shielding

bodies

2 and 3. For example, the substrate 1 may be placed in a dedicated Molding filling device, and a protective adhesive layer may be obtained by applying a glue filling Molding, or a protective adhesive may be formed on the substrate 1 by a dispensing method. In some embodiments, the protective glue layer around the light emitting unit 100 and the light signal receiving unit 200 is cut off by a cutting device to form a glue filling site of the light barrier glue layer. Or, a first protective adhesive layer and a second protective adhesive layer with light barrier adhesive layer glue filling positions are formed in one step through a special die.

Due to the flexibility of the process, the overall packaging size of the photoelectric detection sensor of the embodiment can be flexibly adjusted according to the actual application requirements, so that large-size packaging and small-size packaging can be realized, such as 2.0mm multiplied by 1.0mm, 2.0mm multiplied by 1.6mm and the like, and the packaging thickness can be flexibly adjusted by adjusting the amount of injected glue; 0.7mm, 1.0mm and the like, and provides great flexibility for adapting to different application requirements.

In a more specific embodiment, the upper surface and the lower surface of the substrate 1 of the present embodiment are each provided with four conductive potentials. Specifically, referring to fig. 3, fig. 3 is a schematic diagram of a substrate structure of a photodetection sensor according to an embodiment of the present invention (the first light-shielding body and the second light-shielding body are omitted in the figure). As shown in fig. 3, a first conductive potential 101, a first conductive connection site 102, a second conductive potential 103 and a second conductive connection site 104 are disposed on the upper surface of the substrate 1, the first mounting site 11 is disposed on the first conductive potential 101, and the second mounting site 12 is disposed on the second conductive potential 103; wherein the light emitting unit 100 located at the first mounting position 11 is communicated with the first conductive connection position 102 through a first conductive wire 105, and the light signal receiving unit 200 located at the second mounting position 12 is communicated with the second conductive connection 104 through a second conductive wire 106. The position of the first mounting site 11 at the first conductive potential 102, and the second mounting site 12 at the second conductive potential 103, can be flexibly adjusted according to practical applications, in other words, it can also be understood that the light emitting unit 100 and the light signal receiving unit 200 are directly fixed to the first conductive potential 102 and the second conductive potential 103, respectively.

The lower surface of the substrate 1 is provided with a third conductive potential, a third conductive connection site, a fourth conductive potential, and a fourth conductive connection site (not shown in the figure) corresponding to the first conductive potential 101, the first conductive connection site 102, the second conductive potential 103, and the second conductive connection site 104, respectively. And a first through hole 1001 for connecting the first conductive potential 101 and the third conductive potential, a second through hole 1002 for connecting the first conductive connection site 102 and the third conductive connection site, a third through hole 1003 for connecting the second conductive potential 103 and the fourth conductive potential, and a fourth through hole 1004 for connecting the second conductive connection site 104 and the fourth conductive connection site are respectively provided on both sides of the substrate 1. These through holes may serve to electrically connect the upper and lower conductive sites of the substrate 1. Optionally, the shapes and sizes of the four conductive potentials disposed on the upper surface and the lower surface of the substrate 1 may be flexibly adjusted according to practical applications or heat dissipation requirements, which is not limited in this embodiment.

According to the above design, when manufacturing the photodetection sensor, after the light emitting unit 100 and the optical signal receiving unit 200 are respectively fixed on the substrate 1, the light emitting unit 100 and the optical signal receiving unit 200 are further respectively connected with the first conductive connection site 102 and the second conductive connection site 104 of the substrate 1 through the first conductive line 105 and the second conductive line 106, and then the subsequent operation of the glue injection process is performed. It should be noted that the photoelectric detection sensor of the present embodiment is not limited to the above-mentioned design (i.e. the way of setting four conductive potentials on the upper and lower surfaces of the substrate 1 and then connecting the light emitting unit 100 and the light signal receiving unit 200 through the conductive wires), and those skilled in the art can flexibly design the substrate 1, the light emitting unit 100 and the light signal receiving unit 200 according to actual needs without departing from the protection scope of the present specification.

Referring to fig. 4, fig. 4 is a main flowchart of a method for manufacturing a photoelectric detection sensor according to an embodiment of the present invention. As shown in fig. 4, the method includes:

s410: a substrate is provided with a first mounting location and a second mounting location.

The substrate is further provided with a first light-avoiding body 2 and a second light-avoiding body 3, the first light-avoiding body 2 is covered on the first installation position 11, a first opening is formed in the top end of the first light-avoiding body 2, the second light-avoiding body 3 is covered on the second installation position 12, and a second opening is formed in the top end of the second light-avoiding body 3. For a specific exemplary structure of the substrate 1, reference may be made to the structural description of the substrate 1 above, and details are not repeated here.

S420: the light emitting unit 100 and the light signal receiving unit 200 are fixed to the first mounting location 11 and the second mounting location 12 of the substrate 1, respectively.

In this step, the above description is referred to for the light emitting unit 100 and the light signal receiving unit 200, and is not repeated here.

S430: injecting glue into the upper surface of the substrate 1 by using glue injection equipment to form a protective glue layer on the upper surface of the substrate 1 and the inner areas of the first light avoiding body 2 and the second light avoiding body 3; or injecting colloid into the inner areas of the first and second

light avoiding bodies

2 and 3 through the first and second openings, respectively, by using a glue injection device, so as to form a protective glue layer in the inner areas of the first and second

light avoiding bodies

2 and 3, respectively.

Wherein the protective adhesive layer covers the light emitting unit 100 and the optical signal receiving unit 200, and allows the optical signal of the light emitting unit 100 to pass through; the light avoiding part of the first light avoiding body 2 and the light avoiding part of the second light avoiding body 3 are used for preventing the optical signal of the light emitting unit from passing through.

For a more detailed description of the manufacturing method, reference may be made to the above description of the photodetection sensor, and details are not repeated here.

Based on the same utility model concept, this embodiment still provides an electronic equipment, electronic equipment includes foretell integrated form photoelectric detection sensor.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims

1. An integrated photodetection sensor, characterized in that it comprises:

the substrate is further provided with:

2. The photoelectric detection sensor according to claim 1, wherein the light-shielding portion of the first light-shielding body is fixed to the substrate and forms a first accommodating cavity with the substrate for accommodating the light-emitting unit, so that the glue can be injected into the first accommodating cavity to form a first protective glue layer;

3. The photoelectric detection sensor according to claim 1, wherein the first light-shielding body and the second light-shielding body form a bowl-cup structure with the substrate, and the light-shielding portion of the first light-shielding body and the light-shielding portion of the second light-shielding body are both black.

4. The photoelectric detection sensor according to claim 1, wherein the light shielding portion of the first light shielding body includes a first light shielding portion, a second light shielding portion, a third light shielding portion, and a fourth light shielding portion, and the first light shielding portion, the second light shielding portion, the third light shielding portion, and the fourth light shielding portion surround the light emitting unit to form a rectangular area with openings at upper and lower ends;

the light-avoiding part of the second light-avoiding body comprises a fifth light-avoiding part, a sixth light-avoiding part, a seventh light-avoiding part and an eighth light-avoiding part, and the fifth light-avoiding part, the sixth light-avoiding part, the seventh light-avoiding part and the eighth light-avoiding part surround the optical signal receiving unit to form a rectangular area with openings at the upper end and the lower end.

5. The photodetection sensor according to any one of claims 1 to 4, wherein an upper surface of the substrate is covered with a third protective adhesive layer, and the third protective adhesive layer covers the first light avoiding body and the second light avoiding body;

6. The photodetection sensor according to any one of claims 1 to 4, characterized in that the light-shielding portion of the first light-shielding body and the light-shielding portion of the second light-shielding body are made of black material.

7. The photodetection sensor according to any one of claims 1 to 4, wherein a first conductive potential, a first conductive connection site, and a second conductive potential, a second conductive connection site are provided on the upper surface of the substrate, the first mounting site is provided at the first conductive potential, and the second mounting site is provided at the second conductive potential;

8. The photodetection sensor according to claim 7, wherein the lower surface of the substrate is provided with a third conducting potential, a third conducting connection site, a fourth conducting potential, and a fourth conducting connection site, which are respectively in one-to-one correspondence with the first conducting potential, the first conducting connection site, the second conducting potential, and the second conducting connection site;

9. An electronic device comprising the integrated photodetection sensor according to any one of claims 1 to 8.