CN113851459A - Anti-crosstalk photoelectric sensor, manufacturing method thereof and electronic equipment - Google Patents
Anti-crosstalk photoelectric sensor, manufacturing method thereof and electronic equipment Download PDFInfo
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- CN113851459A CN113851459A CN202111202726.XA CN202111202726A CN113851459A CN 113851459 A CN113851459 A CN 113851459A CN 202111202726 A CN202111202726 A CN 202111202726A CN 113851459 A CN113851459 A CN 113851459A
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Abstract
The invention relates to the technical field of semiconductors, and provides an anti-crosstalk photoelectric sensor, a manufacturing method thereof and electronic equipment. The crosstalk-proof photoelectric sensor comprises a substrate, wherein a first mounting position and a second mounting position are arranged on the upper surface of the substrate, a light emitting unit is fixed on the first mounting position, and a light signal receiving unit is fixed on the second mounting position; the protective adhesive layer is formed on the upper surface of the substrate in an adhesive injection mode and comprises a first protective adhesive layer and a second protective adhesive layer; the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the optical signal receiving unit; the light shielding glue layer is formed on the upper surface of the substrate in a glue injection mode and is positioned between the first protection glue layer and the second protection glue layer; the protective adhesive layer is used for protecting the light emitting unit and the optical signal receiving unit and allowing the optical signal of the light emitting unit to pass through; the light shielding glue layer is used for preventing the optical signal of the light emitting unit from passing through.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an anti-crosstalk photoelectric sensor, a manufacturing method thereof and electronic equipment.
Background
With the rapid development of science and technology, the application of photoelectric reflection sensors is becoming more and more extensive, for example, heart rate detection and blood oxygen detection in the aspect of medical treatment, and the application of distance approach detection function to service robots in various fields (such as sweeping robots, logistics robots, contactless delivery robots, AGV unmanned transfer robots, etc.). For a remote detection sensor, a light emitting chip and a light signal receiving chip can be independently packaged generally, but with the development trend of integration and miniaturization, the existing integrated photoelectric sensor is easy to generate transverse crosstalk of internal signals, so that the problems of detection misjudgment and the like are caused; in addition, the existing integrated photoelectric sensor has large packaging size, complex packaging structure and low implementation process flexibility.
Disclosure of Invention
The invention aims to provide an anti-crosstalk photoelectric sensor, a manufacturing method thereof and electronic equipment, so as to solve the problem that the integrated photoelectric sensor in the prior art is easy to generate internal signal crosstalk.
In order to achieve the purpose, the invention adopts the technical scheme that:
in a first aspect, the present invention provides a crosstalk-proof photosensor, including:
the optical signal transmission device comprises a substrate, wherein a first mounting position and a second mounting position are arranged on the upper surface of the substrate, a light emitting unit is fixed on the first mounting position, and an optical signal receiving unit is fixed on the second mounting position;
the protective adhesive layer is formed on the upper surface of the substrate in an adhesive injection mode and comprises a first protective adhesive layer and a second protective adhesive layer; wherein the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the optical signal receiving unit;
the light shielding glue layer is formed on the upper surface of the substrate in a glue injection mode and is positioned between the first protection glue layer and the second protection glue layer;
the protective adhesive layer is used for protecting the light emitting unit and the optical signal receiving unit and allowing the optical signal of the light emitting unit to pass through; the light shielding glue layer is used for preventing the optical signal of the light emitting unit from passing through.
In one embodiment, a lower surface of the light shielding glue layer is lower than an upper surface of the light emitting unit;
and/or the lower surface of the light shielding glue layer is lower than the upper surface of the optical signal receiving unit.
In one embodiment, the width of the light shielding glue layer accounts for 30% -80% of the distance between the light emitting unit and the light signal receiving unit.
In one embodiment, the sum of the coverage area of the protective glue layer on the upper surface of the substrate and the coverage area of the light shielding glue layer on the upper surface of the substrate is equal to the area of the upper surface of the substrate;
and/or the protective adhesive layer comprises an ambient light filtering material or a band-pass material, the ambient light filtering material is used for filtering optical signals which can generate interference in the external environment of the photoelectric sensor, and the band-pass material can enable light of a specific wave band to pass through.
In one embodiment, the upper surface of the substrate is provided with a first conductive potential, a first connection conductive potential and a second conductive potential, a second connection conductive potential, the first mounting site is arranged at the first conductive potential, and the second mounting site is arranged at the second conductive potential;
wherein the light emitting unit at the first mounting position is communicated with the first connecting conducting potential through a first conducting wire, and the light signal receiving unit at the second mounting position is communicated with the second connecting conducting potential through a second conducting wire.
In one embodiment, the lower surface of the substrate is provided with a third conducting potential, a third connecting conducting potential, a fourth conducting potential and a fourth connecting conducting potential which are respectively in one-to-one correspondence with the first conducting potential, the first connecting conducting potential, the second conducting potential and the second connecting conducting potential; and the number of the first and second groups,
and a first through hole for connecting the first conducting potential and the third conducting potential, a second through hole for connecting the first connecting conducting potential and the third connecting conducting potential, a third through hole for connecting the second conducting potential and the fourth conducting potential and a fourth through hole for connecting the second connecting conducting potential and the fourth connecting conducting potential are respectively arranged on two sides of the substrate.
In a second aspect, the present invention further provides a method for manufacturing a photoelectric sensor, including:
providing a substrate; the upper surface of the substrate is at least provided with a first mounting position and a second mounting position;
fixing a light emitting unit and a light signal receiving unit to a first mounting position and a second mounting position of the substrate, respectively;
the light emitting unit is communicated with a first connecting conducting potential through a first conducting wire, and the light signal receiving unit is communicated with a second conducting potential through a second conducting wire;
forming a protective adhesive layer and a light shielding adhesive layer on the upper surface of the substrate by using adhesive injection equipment, wherein the protective adhesive layer and the light shielding adhesive layer cover the upper surface of the substrate;
the protective adhesive layer comprises a first protective adhesive layer and a second protective adhesive layer, and the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the light signal receiving unit; the light shielding glue layer is positioned between the first protective glue layer and the second protective glue layer;
the protective adhesive layer is used for protecting the light emitting unit and the optical signal receiving unit and allowing the optical signal of the light emitting unit to pass through; the light shielding glue layer is used for preventing the optical signal of the light emitting unit from passing through.
In a third aspect, the invention provides an electronic device, where the electronic device includes the above-mentioned photosensor, or the electronic device includes the photosensor manufactured by the above-mentioned manufacturing method.
The anti-crosstalk photoelectric sensor provided by the invention has the beneficial effects that:
(1) according to the invention, the light shielding glue layer for shielding the signals of the light emitting unit is arranged between the light emitting unit and the light signal receiving unit, so that the transverse crosstalk of internal signals is eliminated or greatly reduced, and the detection accuracy is greatly improved.
(2) The invention can also prevent the ambient light which can interfere the detection signal from passing through the colloid by mixing various functional materials, such as ambient light filtering materials, in the protective adhesive layer, thereby further improving the accuracy of the detection result and improving the overall performance of the photoelectric sensor.
(3) The photoelectric sensor packaging structure provided by the invention is simple, the process implementation mode is flexible and adjustable, the materials used for packaging and the packaging size can be flexibly adjusted, large-size packaging and small-size packaging can be realized, the packaging thickness can be flexibly adjusted by adjusting the amount of injected glue, and great flexibility is provided for adapting to different application requirements.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic overall structural diagram of a crosstalk-proof photosensor according to an embodiment of the present invention;
fig. 2a is a schematic structural diagram of a first exploded portion of a photoelectric sensor according to an embodiment of the present invention;
fig. 2b is a schematic structural diagram of a second decomposition part of the photoelectric sensor according to the embodiment of the present invention;
fig. 2c is a schematic structural diagram of a third exploded portion of a photoelectric sensor according to an embodiment of the present invention;
fig. 2d is a schematic structural diagram of a fourth exploded portion of a photosensor according to an embodiment of the present invention;
fig. 2e is a schematic structural diagram of a fifth exploded portion of a photoelectric sensor according to an embodiment of the present invention;
fig. 3 is a main flowchart of a method for manufacturing a photosensor according to an embodiment of the present invention.
Wherein, in the figures, the respective reference numerals:
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly or indirectly secured to the other element. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element. The terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positions based on the orientations or positions shown in the drawings, and are for convenience of description only and not to be construed as limiting the technical solution. The terms "first", "second" and "first" are used merely for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features.
Referring to fig. 1, fig. 1 is a schematic view of an overall structure of a crosstalk-proof photoelectric sensor according to an embodiment of the present invention. As shown in fig. 1, the crosstalk-proof photosensor (hereinafter referred to as a photosensor) provided in this embodiment mainly includes a substrate 1, a protective adhesive layer 2, and a light-shielding adhesive layer 3.
The upper surface of the substrate 1 is provided with a first mounting position 11 and a second mounting position 12, the first mounting position 11 is fixed with the light emitting unit 100, and the second mounting position is fixed with the light signal receiving unit 200. As an example, the light emitting unit 100 may be an LED or a VCSEL, the chip structure may be vertical or flip, and the chip structure may be an infrared emitting chip or a green emitting chip according to different applications, but is not limited to these types of chips, and those skilled in the art may select different bands and different types of chips according to practical applications, and this embodiment is not limited to this; the optical signal receiving unit 200 may be a photodiode or a phototransistor, but is not limited to the photodiode or the phototransistor, and may also be a dedicated ASIC chip, and those skilled in the art may flexibly select the optical signal receiving unit according to actual needs, and the embodiment does not limit the optical signal receiving unit. The shape of the substrate 1 is not limited and can be flexibly adjusted. In addition, in the present embodiment, the substrate 1 may have a square or rectangular parallelepiped shape having a certain thickness, and the upper surface and the lower surface have a square or rectangular shape. That is, the upper surface and the lower surface of the substrate 1 are opposite, and the light emitting unit 100 and the light signal receiving unit 200 are disposed on the same surface of the substrate 1 (i.e., on the same surface as the upper surface or on the same surface as the lower surface), since the upper surface and the lower surface of the substrate 1 are opposite, disposing the light emitting unit 100 and the light signal receiving unit 200 on the upper surface of the substrate 1 in the present embodiment does not mean defining the light emitting unit 100 and the light signal receiving unit 200 on a certain surface of the substrate 1, in other words, disposing the light emitting unit 100 and the light signal receiving unit 200 on the same surface of the substrate 1 in the present embodiment. It should be noted that the light emitting unit 100 and the light signal receiving unit 200 of the present embodiment may be fixed on the substrate 1, that is, the light emitting unit 100, the light signal receiving unit 200 and the substrate 1 are two separate components; in addition, the light emitting unit 100 and the light signal receiving unit 200 of the present embodiment can also be directly covered inside the substrate 1, i.e. integrated with the substrate 1.
The protective adhesive layer 2 is formed on the upper surface of the substrate 1 by an adhesive injection method, and includes a first protective adhesive layer 21 and a second protective adhesive layer 22, and the first protective adhesive layer 21 and the second protective adhesive layer 22 respectively cover the light emitting unit 100 and the optical signal receiving unit 200. As an example, the protective adhesive layer 2 of the present embodiment is generally transparent silicone or transparent epoxy, but is not limited to transparent silicone or transparent epoxy, and those skilled in the art can also select other materials with similar properties, so that the first protective adhesive layer 21 and the second protective adhesive layer 22 can not only protect the optical transmitting unit 100 and the optical signal receiving unit 200, thereby improving the reliability and stability of the package, but also allow the optical signal in the wavelength band emitted by the optical transmitting unit 100 to pass through. Optionally, other functional materials, such as an ambient light filter material that prevents ambient light signals that may cause interference from passing through or a band pass material that allows light in a specific wavelength band to pass through, may be mixed into the protective gel layer 2. Therefore, the protective adhesive layer 2 can prevent the ambient light which interferes with the detection signal from passing through the adhesive, so that the accuracy of the detection result of the photoelectric sensor is improved, and the overall performance of the photoelectric sensor is improved. In this embodiment, the functional material that can be mixed in the protective adhesive layer 2 is not limited to the above two materials, and those skilled in the art can flexibly select other functional materials according to the application requirements, which is not limited in this embodiment.
The light shielding glue layer 3 is formed on the upper surface of the substrate 1 by glue injection, and is located between the first protective glue layer 21 and the second protective glue layer 22, and is used for preventing the optical signal of the light emitting unit 100 from passing through. In this way, since the light shielding adhesive layer 3 for shielding the signal of the light emitting unit is disposed between the light emitting unit 100 and the light signal receiving unit 200, the internal signal lateral crosstalk can be eliminated or greatly reduced, and the detection accuracy of the photoelectric sensor is greatly improved. By way of example, the light shielding glue layer 3 may be epoxy black glue or black silica gel, but is not limited to epoxy black glue or black silica gel, and those skilled in the art may also select other materials with similar performance, and this embodiment does not limit this. Further, the lower surface of the light shielding adhesive layer 3 is lower than the upper surfaces of the light emitting unit 100 and the light signal receiving unit 200, so as to perform a better shielding function on the light signal emitted by the light emitting unit 100.
As a specific embodiment, after the first protective glue layer 21, the second protective glue layer 22 and the light shielding glue layer 3 are formed on the upper surface of the substrate 1, the coverage area of the first protective glue layer 21 on the substrate 1, the coverage area of the second protective glue layer 22 on the substrate 1 and the coverage area of the light shielding glue layer 3 on the substrate 1 are equal to the total area of the upper surface of the substrate 1, that is, the first protective glue layer 21, the second protective glue layer 22 and the light shielding glue layer 3 collectively cover the entire upper surface of the substrate 1. Further, the width of the light shielding adhesive layer 3 accounts for 30% -80% of the distance between the light emitting unit 100 and the light signal receiving unit 200, which not only ensures the safe distance between the light shielding adhesive layer 3 and the light emitting unit 100 and the light signal receiving unit 200, but also ensures that the light signal emitted by the light emitting unit 100 can be prevented from passing through. Note that the width of the light shielding adhesive layer 3 is the distance from the left side wall to the right side wall of the light shielding adhesive layer 3 in fig. 1, and the distance between the light emitting unit 100 and the light signal receiving unit 200 can be understood as the distance between the right end of the light emitting unit 100 and the left end of the light signal receiving unit 200 in fig. 1. In other words, there is a certain distance between the light emitting unit 100 and the light shielding adhesive layer 3, and there is a certain distance between the light signal receiving unit 200 and the light shielding adhesive layer 3.
As described above, in the photoelectric sensor provided in this embodiment, the light shielding adhesive layer 3 is disposed between the light emitting unit 100 and the light signal receiving unit 200, so as to eliminate or greatly reduce the internal signal lateral crosstalk, and greatly improve the detection accuracy; various functional materials such as an ambient light filtering material can be mixed in the protective adhesive layer 2 to prevent ambient light which can interfere with detection signals from passing through the colloid, so that the accuracy of detection results is further improved, and the overall performance of the photoelectric sensor is improved.
In addition, the photoelectric sensor packaging structure of the embodiment is simple, the process implementation mode is flexible and adjustable, and materials used for packaging and the packaging size can be flexibly adjusted. The following describes the fabrication process of the photosensor according to this embodiment in detail with reference to specific examples.
Referring to fig. 2a to 2e, fig. 2a to 2e are schematic structural diagrams of an exploded portion of a photoelectric sensor according to an embodiment of the present invention. As shown in fig. 2a-2e, in manufacturing the photoelectric sensor of the present embodiment, first, a substrate 1 (such as the substrate 1 shown in fig. 2 a) provided with a first mounting location 11 and a second mounting location 12 is provided, then, a light emitting unit 100 and a light signal receiving unit 200 are respectively fixed to the first mounting location 11 and the second mounting location 12 of the substrate 1 (as shown in fig. 2 b), then, the substrate 1 may be placed into a dedicated Molding glue filling device, a protective glue layer 2 is obtained by using glue filling Molding (as shown in fig. 2 d), further, a cutting process is performed to cut off the protective glue layer between the light emitting unit 100 and the light signal receiving unit 200 to obtain a glue filling location 30, a first protective glue layer 21 and a second protective glue layer 22 (as shown in fig. 2 e), and finally, a light shielding glue layer 3 is formed at the glue filling location 30 by means of dispensing (as shown in fig. 1); the width of the light shielding glue layer 3 accounts for 30% -80% of the edge distance between the light emitting unit 100 and the light signal receiving unit 200.
Alternatively, in the above manufacturing process, the protective adhesive layer 2 is not limited to be molded by Molding, but those skilled in the art may form the adhesive into a rubber cake and then bond the rubber cake to the substrate 1. The light shielding glue layer 3 is not limited to be formed at the glue filling position 30 by a dispensing manner, and may be formed at the glue filling position 30 by a Molding glue filling manner or an injection Molding manner. Except for the formation of the first protective adhesive layer 21, the second protective adhesive layer 22 and the light shielding adhesive layer 3, the embodiment can also use a special mold, the protective adhesive layer 2 with the glue filling position 30 is formed in one step, and then the light shielding adhesive layer 3 is formed by glue filling, i.e. the protective adhesive layer 2 is not required to be formed first and then the glue filling position 30 is not required to be cut, but the special mold is used for forming the first protective adhesive layer 21 and the second protective adhesive layer 22 in one step, and then the light shielding adhesive layer 3 is formed by glue filling, the embodiment does not describe a specific special mold, and a person skilled in the art can select a special mold capable of realizing the above functions.
Due to the flexibility of the process, the overall packaging size of the photoelectric sensor of the embodiment can be flexibly adjusted according to the actual application requirements, so that large-size packaging and small-size packaging can be realized, such as 2.0mm multiplied by 1.0mm, 2.0mm multiplied by 1.6mm and the like, and the packaging thickness can be flexibly adjusted by adjusting the amount of injected glue; 0.7mm, 1.0mm and the like, and provides great flexibility for adapting to different application requirements.
In a more specific embodiment, the upper surface and the lower surface of the substrate 1 of the present embodiment are each provided with four conductive potentials. Specifically, referring to fig. 2a, a first conductive potential 101, a first connection conductive potential 102, a second conductive potential 103, and a second connection conductive potential 104 are provided on the upper surface of the substrate 1, a first mounting site 11 is provided on the first conductive potential 101, and a second mounting site 12 is provided on the second conductive potential 103; wherein the light emitting unit 100 at the first mounting location 11 is in communication with the first conductive connection 102 via a first conductive line 105, and the light signal receiving unit 200 at the second mounting location 12 is in communication with the second conductive connection 104 via a second conductive line 106. The position of the first mounting site 11 at the first conductive potential 102 and the second mounting site 12 at the second conductive potential 103 can be flexibly adjusted according to practical applications, in other words, it can be understood that the light emitting unit 100 and the light signal receiving unit 200 are directly fixed to the first conductive potential 102 and the second conductive potential 103 respectively or the positions of the light emitting unit 100 and the light signal receiving unit 200 are interchanged.
The lower surface of the substrate 1 is provided with a third conduction potential, a third connection conduction potential, a fourth conduction potential, and a fourth connection conduction potential (not shown) corresponding to the first conduction potential 101, the first connection conduction potential 102, the second conduction potential 103, and the second connection conduction potential 104, respectively. And a first via 1001 for connecting the first conductive potential 101 and the third conductive potential, a second via 1002 for connecting the first connection conductive potential 102 and the third connection conductive potential, a third via 1003 for connecting the second conductive potential 103 and the fourth conductive potential, and a fourth via 1004 for connecting the second connection conductive potential 104 and the fourth connection conductive potential are provided on both sides of the substrate 1, respectively. These through holes may serve to electrically connect the upper and lower conductive sites of the substrate 1. Optionally, the shapes and sizes of the four conductive potentials disposed on the upper surface and the lower surface of the substrate 1 may be flexibly adjusted according to practical applications or heat dissipation requirements, which is not limited in this embodiment.
According to the above design, when manufacturing the photoelectric sensor, after the light emitting unit 100 and the optical signal receiving unit 200 are respectively fixed on the substrate 1, the light emitting unit 100 and the optical signal receiving unit 200 are further respectively connected with the first connection conductive potential 102 and the second connection conductive potential 104 of the substrate 1 through the first conductive line 105 and the second conductive line 106, and then the subsequent operation of the glue injection process is performed. It should be noted that the photoelectric sensor of the present embodiment is not limited to the above-mentioned design (i.e. the way of setting four conductive potentials on the upper and lower surfaces of the substrate 1 and then connecting the light emitting unit 100 and the light signal receiving unit 200 through the conductive wires), and those skilled in the art can flexibly design the substrate 1, the light emitting unit 100 and the light signal receiving unit 200 according to actual needs without departing from the protection scope of the present specification.
Referring to fig. 3, fig. 3 is a main flowchart of a method for manufacturing a photosensor according to an embodiment of the present invention. As shown in fig. 3, the method includes:
s310: a substrate is provided.
In this step, the upper surface of the substrate is at least provided with a first mounting location and a second mounting location, and for a specific exemplary structure of the substrate, reference may be made to the structural description of the substrate 1 above, which is not repeated herein.
S320: and fixing the light emitting unit and the light signal receiving unit to a first mounting position and a second mounting position of the substrate respectively.
In this step, the above description is referred to for the light emitting unit and the light signal receiving unit, and is not repeated herein.
S330: and forming a protective adhesive layer and a light shielding adhesive layer on the upper surface of the substrate by using glue injection equipment, wherein the protective adhesive layer and the light shielding adhesive layer cover the upper surface of the substrate.
The light emitting unit and the light signal receiving unit are respectively covered by the first protective adhesive layer and the second protective adhesive layer; the light shielding glue layer is positioned between the first protective glue layer and the second protective glue layer; the protective adhesive layer is used for protecting the light emitting unit and the optical signal receiving unit and allowing the optical signal of the light emitting unit to pass through; the light shielding glue layer is used for preventing the optical signal of the light emitting unit from passing through.
As an example, in step S330, after the first protective adhesive layer and the second protective adhesive layer are formed on the upper surface of the substrate by one-step molding using the glue injection apparatus, the light shielding adhesive layer between the first protective adhesive layer and the second protective adhesive layer may be formed on the upper surface of the substrate using the glue injection apparatus. The glue injection equipment can be special equipment capable of realizing the mode.
As another example, in step S330, a glue injection device (e.g., a dedicated Molding glue injection device) may be used to form a protective glue layer on the upper surface of the substrate to cover the upper surface of the substrate, and then the protective glue layer is cut to obtain a first protective glue layer and a second protective glue layer, and a glue injection position located between the first protective glue layer and the second protective glue layer; and cutting off the protective adhesive layer at the glue filling position, and forming a light shielding adhesive layer at the glue filling position in a glue dispensing or glue filling mode.
For a more detailed description of the manufacturing method, reference may be made to the description of the photosensor above, and further description is omitted here. Due to the flexibility of the process, the overall packaging size of the photoelectric sensor of the embodiment can be flexibly adjusted according to the actual application requirements, so that large-size packaging and small-size packaging can be realized, such as 2.0mm multiplied by 1.0mm, 2.0mm multiplied by 1.6mm and the like, and the packaging thickness can be flexibly adjusted by adjusting the amount of injected glue; 0.7mm, 1.0mm and the like, and provides great flexibility for adapting to different application requirements.
Based on the same inventive concept, the embodiment also provides an electronic device, where the electronic device includes the above-mentioned photosensor, or the electronic device includes the photosensor manufactured by the above-mentioned manufacturing method.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. An anti-crosstalk photosensor, comprising:
the optical signal transmission device comprises a substrate, wherein a first mounting position and a second mounting position are arranged on the upper surface of the substrate, a light emitting unit is fixed on the first mounting position, and an optical signal receiving unit is fixed on the second mounting position;
the protective adhesive layer is formed on the upper surface of the substrate in an adhesive injection mode and comprises a first protective adhesive layer and a second protective adhesive layer; wherein the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the optical signal receiving unit;
the light shielding glue layer is formed on the upper surface of the substrate in a glue injection mode and is positioned between the first protection glue layer and the second protection glue layer;
the protective adhesive layer is used for protecting the light emitting unit and the optical signal receiving unit and allowing the optical signal of the light emitting unit to pass through; the light shielding glue layer is used for preventing the optical signal of the light emitting unit from passing through.
2. The crosstalk-proof photosensor according to claim 1, wherein a lower surface of the light shielding adhesive layer is lower than an upper surface of the light emitting unit;
and/or the lower surface of the light shielding glue layer is lower than the upper surface of the optical signal receiving unit.
3. The crosstalk-proof photosensor according to claim 1, wherein the width of the light shielding glue layer is 30% -80% of the distance between the light emitting unit and the light signal receiving unit.
4. The crosstalk-proof photosensor according to claim 3, wherein the sum of the area covered by the protective adhesive layer on the upper surface of the substrate and the area covered by the light shielding adhesive layer on the upper surface of the substrate is equal to the area of the upper surface of the substrate;
and/or the protective adhesive layer comprises an ambient light filtering material or a band-pass material, the ambient light filtering material is used for filtering optical signals which can generate interference in the external environment of the photoelectric sensor, and the band-pass material can enable light of a specific wave band to pass through.
5. The crosstalk-protected photosensor according to any one of claims 1 to 4, wherein a first conductive potential, a first connection conductive potential, a second conductive potential, and a second connection conductive potential are disposed on the upper surface of the substrate, the first mounting location is disposed at the first conductive potential, and the second mounting location is disposed at the second conductive potential;
wherein the light emitting unit at the first mounting position is communicated with the first connecting conducting potential through a first conducting wire, and the light signal receiving unit at the second mounting position is communicated with the second connecting conducting potential through a second conducting wire.
6. The crosstalk-proof photosensor according to claim 5, wherein a third conduction potential, a third connection conduction potential, a fourth conduction potential, and a fourth connection conduction potential are provided on the lower surface of the substrate, the third conduction potential, the third connection conduction potential, the fourth conduction potential, and the fourth connection conduction potential corresponding to the first conduction potential, the first connection conduction potential, the second conduction potential, and the second connection conduction potential, respectively; and the number of the first and second groups,
and a first through hole for connecting the first conducting potential and the third conducting potential, a second through hole for connecting the first connecting conducting potential and the third connecting conducting potential, a third through hole for connecting the second conducting potential and the fourth conducting potential and a fourth through hole for connecting the second connecting conducting potential and the fourth connecting conducting potential are respectively arranged on two sides of the substrate.
7. A method for manufacturing a crosstalk-proof photoelectric sensor is characterized by comprising the following steps:
providing a substrate; the upper surface of the substrate is at least provided with a first mounting position and a second mounting position;
fixing a light emitting unit and a light signal receiving unit to a first mounting position and a second mounting position of the substrate, respectively;
the light emitting unit is communicated with a first connecting conducting potential through a first conducting wire, and the light signal receiving unit is communicated with a second conducting potential through a second conducting wire;
forming a protective adhesive layer and a light shielding adhesive layer on the upper surface of the substrate by using adhesive injection equipment, wherein the protective adhesive layer and the light shielding adhesive layer cover the upper surface of the substrate;
the protective adhesive layer comprises a first protective adhesive layer and a second protective adhesive layer, and the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the light signal receiving unit; the light shielding glue layer is positioned between the first protective glue layer and the second protective glue layer;
the protective adhesive layer is used for protecting the light emitting unit and the optical signal receiving unit and allowing the optical signal of the light emitting unit to pass through; the light shielding glue layer is used for preventing the optical signal of the light emitting unit from passing through.
8. The manufacturing method according to claim 7, wherein forming a protective adhesive layer and a light shielding adhesive layer on the upper surface of the substrate by using an adhesive injection device includes:
forming a protective adhesive layer covering the upper surface of the substrate on the upper surface of the substrate by using adhesive injection equipment;
cutting the protection glue layer to obtain a first protection glue layer, a second protection glue layer and a glue filling position between the first protection glue layer and the second protection glue layer; cutting off the protective adhesive layer at the adhesive filling position;
and forming a light shielding glue layer at the glue filling position in a glue dispensing or filling mode.
9. The manufacturing method according to claim 7, wherein forming a protective adhesive layer and a light shielding adhesive layer on the upper surface of the substrate by using an adhesive injection device includes:
forming a first protective adhesive layer and a second protective adhesive layer on the upper surface of the substrate in a one-step forming mode by using glue injection equipment;
and forming a light shielding glue layer between the first protection glue layer and the second protection glue layer on the upper surface of the substrate by using glue injection equipment.
10. An electronic device, characterized in that the electronic device comprises the crosstalk-proof photosensor of any one of claims 1 to 6,
alternatively, the electronic device comprises the photoelectric sensor manufactured by the manufacturing method of any one of claims 7 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111202726.XA CN113851459A (en) | 2021-10-15 | 2021-10-15 | Anti-crosstalk photoelectric sensor, manufacturing method thereof and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111202726.XA CN113851459A (en) | 2021-10-15 | 2021-10-15 | Anti-crosstalk photoelectric sensor, manufacturing method thereof and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113851459A true CN113851459A (en) | 2021-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111202726.XA Pending CN113851459A (en) | 2021-10-15 | 2021-10-15 | Anti-crosstalk photoelectric sensor, manufacturing method thereof and electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113851459A (en) |
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2021
- 2021-10-15 CN CN202111202726.XA patent/CN113851459A/en active Pending
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