CN216849930U - Anti-crosstalk photoelectric sensor and electronic equipment - Google Patents
Anti-crosstalk photoelectric sensor and electronic equipment Download PDFInfo
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- CN216849930U CN216849930U CN202122495496.2U CN202122495496U CN216849930U CN 216849930 U CN216849930 U CN 216849930U CN 202122495496 U CN202122495496 U CN 202122495496U CN 216849930 U CN216849930 U CN 216849930U
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Abstract
The utility model relates to the field of semiconductor technology, a prevent crosstalking formula photoelectric sensor and preparation method, electronic equipment thereof is provided. The crosstalk-proof photoelectric sensor comprises a substrate, wherein a first mounting position and a second mounting position are arranged on the upper surface of the substrate, a light emitting unit is fixed on the first mounting position, and a light signal receiving unit is fixed on the second mounting position; the protective adhesive layer is formed on the upper surface of the substrate in an adhesive injection mode and comprises a first protective adhesive layer and a second protective adhesive layer; the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the optical signal receiving unit; the light shielding glue layer is formed on the upper surface of the substrate in a glue injection mode and is positioned between the first protection glue layer and the second protection glue layer; the protective adhesive layer is used for protecting the light emitting unit and the optical signal receiving unit and allowing the optical signal of the light emitting unit to pass through; the light shielding glue layer is used for preventing the optical signal of the light emitting unit from passing through.
Description
Technical Field
The utility model relates to a semiconductor technology field, more specifically say so, relate to an anti-crosstalk formula photoelectric sensor and electronic equipment.
Background
With the rapid development of science and technology, the application of photoelectric reflection sensors is becoming more and more extensive, for example, heart rate detection and blood oxygen detection in the aspect of medical treatment, and the application of distance approach detection function to service robots in various fields (such as sweeping robots, logistics robots, contactless delivery robots, AGV unmanned transfer robots, etc.). For a remote detection sensor, a light emitting chip and a light signal receiving chip can be independently packaged generally, but with the development trend of integration and miniaturization, the existing integrated photoelectric sensor is easy to generate transverse crosstalk of internal signals, so that the problems of detection misjudgment and the like are caused; in addition, the existing integrated photoelectric sensor has large packaging size, complex packaging structure and low implementation process flexibility.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an anti-crosstalk formula photoelectric sensor and electronic equipment to the problem of internal signal crosstalk appears easily in the integrated form photoelectric sensor who solves among the prior art.
In order to achieve the above object, the utility model adopts the following technical scheme:
in a first aspect, the utility model provides an anti-crosstalk photoelectric sensor, include:
the optical signal transmission device comprises a substrate, wherein a first mounting position and a second mounting position are arranged on the upper surface of the substrate, a light emitting unit is fixed on the first mounting position, and an optical signal receiving unit is fixed on the second mounting position;
the protective adhesive layer is formed on the upper surface of the substrate in an adhesive injection mode and comprises a first protective adhesive layer and a second protective adhesive layer; wherein the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the optical signal receiving unit;
the light shielding glue layer is formed on the upper surface of the substrate in a glue injection mode and is positioned between the first protection glue layer and the second protection glue layer;
the protective adhesive layer is used for protecting the light emitting unit and the optical signal receiving unit and allowing the optical signal of the light emitting unit to pass through; the light shielding glue layer is used for preventing the optical signal of the light emitting unit from passing through.
In one embodiment, a lower surface of the light shielding glue layer is lower than an upper surface of the light emitting unit;
and/or the lower surface of the light shielding glue layer is lower than the upper surface of the optical signal receiving unit.
In one embodiment, the width of the light shielding glue layer accounts for 30% -80% of the distance between the light emitting unit and the light signal receiving unit.
In one embodiment, the sum of the coverage area of the protective glue layer on the upper surface of the substrate and the coverage area of the light shielding glue layer on the upper surface of the substrate is equal to the area of the upper surface of the substrate;
and/or the protective adhesive layer comprises an ambient light filtering material or a band-pass material, the ambient light filtering material is used for filtering optical signals which can generate interference in the external environment of the photoelectric sensor, and the band-pass material can enable light of a specific wave band to pass through.
In one embodiment, the upper surface of the substrate is provided with a first conductive potential, a first connection conductive potential and a second conductive potential, a second connection conductive potential, the first mounting site is arranged at the first conductive potential, and the second mounting site is arranged at the second conductive potential;
wherein the light emitting unit at the first mounting position is communicated with the first connecting conducting potential through a first conducting wire, and the light signal receiving unit at the second mounting position is communicated with the second connecting conducting potential through a second conducting wire.
In one embodiment, the lower surface of the substrate is provided with a third conducting potential, a third connecting conducting potential, a fourth conducting potential and a fourth connecting conducting potential which are respectively in one-to-one correspondence with the first conducting potential, the first connecting conducting potential, the second conducting potential and the second connecting conducting potential; and the number of the first and second groups,
and a first through hole for connecting the first conducting potential and the third conducting potential, a second through hole for connecting the first connecting conducting potential and the third connecting conducting potential, a third through hole for connecting the second conducting potential and the fourth conducting potential and a fourth through hole for connecting the second connecting conducting potential and the fourth connecting conducting potential are respectively arranged on two sides of the substrate.
In one embodiment, the light emitting unit is an LED or VCSEL; the signal receiving unit is a photodiode, a phototriode or an ASIC chip.
In a second aspect, the present invention provides an electronic device, which includes the crosstalk-proof photoelectric sensor.
The utility model provides an anti-crosstalk formula photoelectric sensor's beneficial effect lies in at least:
(1) the utility model discloses set up the light shielding glue film that is used for shielding light emission unit signal between light emission unit and light signal receiving unit to eliminate or greatly reduced internal signal transversely crosstalk, greatly improved the accuracy that detects.
(2) The utility model discloses can also be through mixing various functional materials in the protection glue film, like ambient light filtering material to the prevention can pass through the colloid to the ambient light that the detected signal produced the interference, further improves the accuracy of testing result, promotes photoelectric sensor's wholeness ability.
(3) The utility model provides a photoelectric sensor packaging structure is simple, and technology implementation is nimble adjustable, can adjust material and the encapsulation size that the encapsulation was used in a flexible way, both can realize the jumbo size encapsulation, also can realize the small-size encapsulation, and the volume of glue that encapsulation thickness accessible was adjusted and is poured into is nimble to be adjusted, provides very big flexibility for adapting to different application demands.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic view of an overall structure of an anti-crosstalk photoelectric sensor according to an embodiment of the present invention;
fig. 2a is a schematic structural diagram of a first decomposition part of a photoelectric sensor according to an embodiment of the present invention;
fig. 2b is a schematic structural diagram of a second decomposition part of the photoelectric sensor according to an embodiment of the present invention;
fig. 2c is a schematic structural diagram of a third exploded portion of the photoelectric sensor according to the embodiment of the present invention;
fig. 2d is a schematic structural diagram of a fourth exploded portion of the photoelectric sensor according to an embodiment of the present invention;
fig. 2e is a schematic structural diagram of a fifth decomposition portion of the photoelectric sensor according to the embodiment of the present invention;
fig. 3 is a main flowchart of a manufacturing method of a photoelectric sensor according to an embodiment of the present invention.
Wherein, in the figures, the respective reference numerals:
| 1 | |
| 11 | |
| 12 | |
| 101 | First |
| 102 | First |
| 103 | Second |
| 104 | Second |
| 105 | First |
| 106 | Second |
| 1001 | First through |
| 1002 | Second through |
| 1003 | Third through |
| 1004 | Fourth through |
| 2 | Protective |
| 21 | First |
| 22 | Second protective |
| 3 | Light |
| 30 | |
| 100 | |
| 200 | Optical signal receiving unit |
Detailed Description
In order to make the technical problem, technical solution and advantageous effects to be solved by the present invention more clearly understood, the following description is given in conjunction with the accompanying drawings and embodiments to illustrate the present invention in further detail. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly or indirectly secured to the other element. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element. The terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positions based on the orientations or positions shown in the drawings, and are for convenience of description only and not to be construed as limiting the technical solution. The terms "first", "second" and "first" are used merely for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features.
Referring to fig. 1, fig. 1 is a schematic view of an overall structure of an anti-crosstalk photoelectric sensor according to an embodiment of the present invention. As shown in fig. 1, the crosstalk-proof photosensor (hereinafter referred to as a photosensor) provided in this embodiment mainly includes a substrate 1, a protective adhesive layer 2, and a light-shielding adhesive layer 3.
The upper surface of the substrate 1 is provided with a first mounting position 11 and a second mounting position 12, the first mounting position 11 is fixed with the light emitting unit 100, and the second mounting position is fixed with the light signal receiving unit 200. As an example, the light emitting unit 100 may be an LED or a VCSEL, the chip structure may be vertical or flip chip, and the chip structure may be an infrared emitting chip or a green emitting chip according to different applications, but the chip is not limited to these types of chips, and those skilled in the art may select different bands and different types of chips according to practical applications, and this embodiment is not limited to this; the optical signal receiving unit 200 may be a photodiode or a phototransistor, but is not limited to the photodiode or the phototransistor, and may also be a dedicated ASIC chip, and those skilled in the art may flexibly select the optical signal receiving unit according to actual needs, and the embodiment does not limit the optical signal receiving unit. The shape of the substrate 1 is not limited, and can be flexibly adjusted. Further, in the present embodiment, it is illustrated that the substrate 1 may be a square or rectangular parallelepiped having a certain thickness, the upper surface and the lower surface are square or rectangular, that is, the upper surface and the lower surface of the substrate 1 are opposite, the light emitting unit 100 and the light signal receiving unit 200 are disposed on the same surface of the substrate 1 (that is, disposed on the same surface or disposed on the same surface of the substrate 1), and since the upper surface and the lower surface of the substrate 1 are opposite, disposing the light emitting unit 100 and the light signal receiving unit 200 on the upper surface of the substrate 1 in the present embodiment does not represent limiting the light emitting unit 100 and the light signal receiving unit 200 on a certain surface of the substrate 1, in other words, disposing the light emitting unit 100 and the light signal receiving unit 200 on the same surface of the substrate 1 in the present embodiment is sufficient. It should be noted that the light emitting unit 100 and the light signal receiving unit 200 of the present embodiment may be fixed on the substrate 1, that is, the light emitting unit 100, the light signal receiving unit 200 and the substrate 1 are two separate components; in addition, the light emitting unit 100 and the light signal receiving unit 200 of the present embodiment can also be directly covered inside the substrate 1, i.e. integrated with the substrate 1.
The protective adhesive layer 2 is formed on the upper surface of the substrate 1 by an adhesive injection method, and includes a first protective adhesive layer 21 and a second protective adhesive layer 22, and the first protective adhesive layer 21 and the second protective adhesive layer 22 respectively cover the light emitting unit 100 and the optical signal receiving unit 200. As an example, the protective adhesive layer 2 of the present embodiment is generally transparent silicone or transparent epoxy, but is not limited to transparent silicone or transparent epoxy, and those skilled in the art can also select other materials with similar properties, so that the first protective adhesive layer 21 and the second protective adhesive layer 22 can not only protect the optical transmitting unit 100 and the optical signal receiving unit 200, thereby improving the reliability and stability of the package, but also allow the optical signal in the wavelength band emitted by the optical transmitting unit 100 to pass through. Optionally, other functional materials, such as an ambient light filter material that prevents ambient light signals that may cause interference from passing through or a band pass material that allows light in a specific wavelength band to pass through, may be mixed into the protective gel layer 2. Therefore, the protective adhesive layer 2 can prevent the ambient light which interferes with the detection signal from passing through the adhesive, so that the accuracy of the detection result of the photoelectric sensor is improved, and the overall performance of the photoelectric sensor is improved. In this embodiment, the functional materials that can be mixed in the protective adhesive layer 2 are not limited to the above two materials, and those skilled in the art can flexibly select other functional materials according to the application requirements, which is not limited in this embodiment.
The light shielding glue layer 3 is formed on the upper surface of the substrate 1 by glue injection, and is located between the first protective glue layer 21 and the second protective glue layer 22, and is used for preventing the optical signal of the light emitting unit 100 from passing through. In this way, since the light shielding adhesive layer 3 for shielding the signal of the light emitting unit is disposed between the light emitting unit 100 and the light signal receiving unit 200, the internal signal lateral crosstalk can be eliminated or greatly reduced, and the detection accuracy of the photoelectric sensor is greatly improved. By way of example, the light shielding glue layer 3 may be epoxy black glue or black silica gel, but is not limited to epoxy black glue or black silica gel, and those skilled in the art may also select other materials with similar performance, and this embodiment does not limit this. Further, the lower surface of the light shielding adhesive layer 3 is lower than the upper surfaces of the light emitting unit 100 and the light signal receiving unit 200, so as to perform a better shielding function on the light signal emitted by the light emitting unit 100.
As a specific embodiment, after the first protective glue layer 21, the second protective glue layer 22 and the light shielding glue layer 3 are formed on the upper surface of the substrate 1, the coverage area of the first protective glue layer 21 on the substrate 1, the coverage area of the second protective glue layer 22 on the substrate 1 and the coverage area of the light shielding glue layer 3 on the substrate 1 are equal to the total area of the upper surface of the substrate 1, that is, the first protective glue layer 21, the second protective glue layer 22 and the light shielding glue layer 3 together cover the entire upper surface of the substrate 1. Further, the width of the light shielding adhesive layer 3 accounts for 30% -80% of the distance between the light emitting unit 100 and the light signal receiving unit 200, which not only ensures the safe distance between the light shielding adhesive layer 3 and the light emitting unit 100 and the light signal receiving unit 200, but also ensures that the light signal emitted by the light emitting unit 100 can be prevented from passing through. Note that the width of the light shielding adhesive layer 3 is the distance from the left side wall to the right side wall of the light shielding adhesive layer 3 in fig. 1, and the distance between the light emitting unit 100 and the light signal receiving unit 200 can be understood as the distance between the right end of the light emitting unit 100 and the left end of the light signal receiving unit 200 in fig. 1. In other words, there is a certain distance between the light emitting unit 100 and the light shielding adhesive layer 3, and there is a certain distance between the light signal receiving unit 200 and the light shielding adhesive layer 3.
As described above, in the photoelectric sensor provided in this embodiment, the light shielding adhesive layer 3 is disposed between the light emitting unit 100 and the light signal receiving unit 200, so as to eliminate or greatly reduce the internal signal lateral crosstalk, and greatly improve the detection accuracy; various functional materials such as an ambient light filtering material can be mixed in the protective adhesive layer 2 to prevent ambient light which can interfere with detection signals from passing through the colloid, so that the accuracy of detection results is further improved, and the overall performance of the photoelectric sensor is improved.
In addition, the photoelectric sensor packaging structure of the embodiment is simple, the process implementation mode is flexible and adjustable, and materials used for packaging and the packaging size can be flexibly adjusted. The following describes the fabrication process of the photosensor according to this embodiment in detail with reference to specific examples.
Referring to fig. 2a to 2e, fig. 2a to 2e are schematic structural diagrams of an exploded portion of a photoelectric sensor according to an embodiment of the present invention. As shown in fig. 2a-2e, in manufacturing the photoelectric sensor of the present embodiment, first, a substrate 1 (such as the substrate 1 shown in fig. 2 a) provided with a first mounting location 11 and a second mounting location 12 is provided, then, a light emitting unit 100 and a light signal receiving unit 200 are respectively fixed to the first mounting location 11 and the second mounting location 12 of the substrate 1 (as shown in fig. 2 b), then, the substrate 1 may be placed into a dedicated Molding glue filling device, a protective glue layer 2 is obtained by using glue filling Molding (as shown in fig. 2 d), further, a cutting process is performed to cut off the protective glue layer between the light emitting unit 100 and the light signal receiving unit 200 to obtain a glue filling location 30, a first protective glue layer 21 and a second protective glue layer 22 (as shown in fig. 2 e), and finally, a light shielding glue layer 3 is formed at the glue filling location 30 by means of dispensing (as shown in fig. 1); the width of the light shielding glue layer 3 accounts for 30% -80% of the edge distance between the light emitting unit 100 and the light signal receiving unit 200.
Alternatively, in the above manufacturing process, the protective adhesive layer 2 is not limited to be molded by Molding, but those skilled in the art may form the adhesive into a rubber cake and then bond the rubber cake to the substrate 1. The light shielding glue layer 3 is not limited to be formed at the glue filling position 30 by a dispensing manner, and may be formed at the glue filling position 30 by a Molding glue filling manner or an injection Molding manner. In addition to the above-mentioned first protective glue layer 21, second protective glue layer 22 and light shielding glue layer 3, this embodiment may also use a special mold, form the protective glue layer 2 with the light shielding glue layer 3 in one step, that is, it is not necessary to form the protective glue layer 2 first and then cut out the glue filling position 30 and then glue the light shielding glue layer 3, but use a special mold to form the protective glue layer 2 with the glue filling position 30 in one step, and then glue the light shielding glue layer 3, that is, it is not necessary to form the protective glue layer 2 first and then cut out the glue filling position 30, but use a special mold to form the first protective glue layer 21, second protective glue layer 22 in one step, and then glue the light shielding glue layer 3.
Due to the flexibility of the process, the overall packaging size of the photoelectric sensor of the embodiment can be flexibly adjusted according to the actual application requirements, so that large-size packaging and small-size packaging can be realized, such as 2.0mm multiplied by 1.0mm, 2.0mm multiplied by 1.6mm and the like, and the packaging thickness can be flexibly adjusted by adjusting the amount of injected glue; 0.7mm, 1.0mm and the like, and provides great flexibility for adapting to different application requirements.
In a more specific embodiment, the upper surface and the lower surface of the substrate 1 of the present embodiment are each provided with four conductive potentials. Specifically, referring to fig. 2a, a first conductive potential 101, a first connection conductive potential 102, a second conductive potential 103, and a second connection conductive potential 104 are provided on the upper surface of the substrate 1, a first mounting site 11 is provided on the first conductive potential 101, and a second mounting site 12 is provided on the second conductive potential 103; wherein the light emitting unit 100 at the first mounting location 11 is in communication with the first conductive connection 102 via a first conductive line 105, and the light signal receiving unit 200 at the second mounting location 12 is in communication with the second conductive connection 104 via a second conductive line 106. The position of the first mounting site 11 at the first conductive potential 102 and the second mounting site 12 at the second conductive potential 103 can be flexibly adjusted according to practical applications, in other words, it can be understood that the light emitting unit 100 and the light signal receiving unit 200 are directly fixed to the first conductive potential 102 and the second conductive potential 103 respectively or the positions of the light emitting unit 100 and the light signal receiving unit 200 are interchanged.
The lower surface of the substrate 1 is provided with a third conduction potential, a third connection conduction potential, a fourth conduction potential, and a fourth connection conduction potential (not shown) corresponding to the first conduction potential 101, the first connection conduction potential 102, the second conduction potential 103, and the second connection conduction potential 104, respectively. And a first via 1001 for connecting the first conductive potential 101 and the third conductive potential, a second via 1002 for connecting the first connection conductive potential 102 and the third connection conductive potential, a third via 1003 for connecting the second conductive potential 103 and the fourth conductive potential, and a fourth via 1004 for connecting the second connection conductive potential 104 and the fourth connection conductive potential are provided on both sides of the substrate 1, respectively. These through holes may serve to electrically connect the upper and lower conductive sites of the substrate 1. Optionally, the shapes and sizes of the four conductive potentials disposed on the upper surface and the lower surface of the substrate 1 may be flexibly adjusted according to practical applications or heat dissipation requirements, which is not limited in this embodiment.
According to the above design, when manufacturing the photoelectric sensor, after the light emitting unit 100 and the optical signal receiving unit 200 are respectively fixed on the substrate 1, the light emitting unit 100 and the optical signal receiving unit 200 are further respectively connected with the first connection conductive potential 102 and the second connection conductive potential 104 of the substrate 1 through the first conductive line 105 and the second conductive line 106, and then the subsequent operation of the glue injection process is performed. It should be noted that the photoelectric sensor of the present embodiment is not limited to the above-mentioned design (i.e. the way of setting four conductive potentials on the upper and lower surfaces of the substrate 1 and then connecting the light emitting unit 100 and the light signal receiving unit 200 through the conductive wires), and those skilled in the art can flexibly design the substrate 1, the light emitting unit 100 and the light signal receiving unit 200 according to actual needs without departing from the protection scope of the present specification.
The embodiment also provides a manufacturing method of a photoelectric sensor, referring to fig. 3, and fig. 3 is a main flowchart of the manufacturing method of the photoelectric sensor provided by the embodiment of the present invention. As shown in fig. 3, the method includes:
s310: a substrate is provided.
In this step, the upper surface of the substrate is at least provided with a first mounting location and a second mounting location, and for a specific exemplary structure of the substrate, reference may be made to the structural description of the substrate 1 above, which is not repeated herein.
S320: and fixing the light emitting unit and the light signal receiving unit to a first mounting position and a second mounting position of the substrate respectively.
In this step, the above description is referred to for the light emitting unit and the light signal receiving unit, and is not repeated herein.
S330: and forming a protective adhesive layer and a light shielding adhesive layer on the upper surface of the substrate by using glue injection equipment, wherein the protective adhesive layer and the light shielding adhesive layer cover the upper surface of the substrate.
The light emitting unit and the light signal receiving unit are respectively covered by the first protective adhesive layer and the second protective adhesive layer; the light shielding glue layer is positioned between the first protective glue layer and the second protective glue layer; the protective adhesive layer is used for protecting the light emitting unit and the optical signal receiving unit and allowing the optical signal of the light emitting unit to pass through; the light shielding glue layer is used for preventing the optical signal of the light emitting unit from passing through.
As an example, in step S330, after the first protective adhesive layer and the second protective adhesive layer are formed on the upper surface of the substrate by one-step molding using the glue injection apparatus, the light shielding adhesive layer between the first protective adhesive layer and the second protective adhesive layer may be formed on the upper surface of the substrate using the glue injection apparatus. The glue injection equipment can be special equipment capable of realizing the mode.
As another example, in step S330, a glue injection device (e.g., a dedicated Molding glue injection device) may be used to form a protective glue layer on the upper surface of the substrate to cover the upper surface of the substrate, and then the protective glue layer is cut to obtain a first protective glue layer and a second protective glue layer, and a glue injection position located between the first protective glue layer and the second protective glue layer; and cutting off the protective adhesive layer at the glue filling position, and forming a light shielding adhesive layer at the glue filling position in a glue dispensing or glue filling mode.
For a more detailed description of the manufacturing method, reference may be made to the description of the photosensor above, and further description is omitted here. Due to the flexibility of the process, the overall packaging size of the photoelectric sensor of the embodiment can be flexibly adjusted according to the actual application requirements, so that large-size packaging and small-size packaging can be realized, such as 2.0mm multiplied by 1.0mm, 2.0mm multiplied by 1.6mm and the like, and the packaging thickness can be flexibly adjusted by adjusting the amount of injected glue; 0.7mm, 1.0mm and the like, and provides great flexibility for adapting to different application requirements.
Based on the same utility model concept, this embodiment also provides an electronic device, the electronic device includes the above-mentioned photoelectric sensor, or, the electronic device includes the photoelectric sensor that makes with above-mentioned manufacturing method.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. An anti-crosstalk photosensor, comprising:
the optical signal transmission device comprises a substrate, wherein a first mounting position and a second mounting position are arranged on the upper surface of the substrate, a light emitting unit is fixed on the first mounting position, and an optical signal receiving unit is fixed on the second mounting position;
the protective adhesive layer is formed on the upper surface of the substrate in an adhesive injection mode and comprises a first protective adhesive layer and a second protective adhesive layer; the first protective adhesive layer and the second protective adhesive layer respectively cover the light emitting unit and the light signal receiving unit;
the light shielding glue layer is formed on the upper surface of the substrate in a glue injection mode and is positioned between the first protection glue layer and the second protection glue layer;
the protective adhesive layer is used for protecting the light emitting unit and the optical signal receiving unit and allowing the optical signal of the light emitting unit to pass through; the light shielding glue layer is used for preventing the optical signal of the light emitting unit from passing through.
2. The crosstalk-proof photosensor according to claim 1, wherein a lower surface of the light shielding glue layer is lower than an upper surface of the light emitting unit.
3. The crosstalk-proof photosensor according to claim 2, wherein a lower surface of the light shielding adhesive layer is lower than an upper surface of the optical signal receiving unit.
4. The crosstalk-proof photosensor according to claim 1, wherein the width of the light shielding glue layer is 30% -80% of the distance between the light emitting unit and the light signal receiving unit.
5. The crosstalk-proof photosensor according to claim 4, wherein the sum of the area covered by the protective adhesive layer and the area covered by the light shielding adhesive layer is equal to the area of the upper surface of the substrate.
6. The crosstalk-protected photosensor according to any one of claims 1 to 5, wherein a first conductive potential, a first connection conductive potential, a second conductive potential, and a second connection conductive potential are disposed on the upper surface of the substrate, the first mounting location is disposed at the first conductive potential, and the second mounting location is disposed at the second conductive potential;
wherein the light emitting unit at the first mounting position is communicated with the first connecting conducting potential through a first conducting wire, and the light signal receiving unit at the second mounting position is communicated with the second connecting conducting potential through a second conducting wire.
7. The crosstalk-proof photosensor according to claim 6, wherein a third conduction potential, a third connection conduction potential, a fourth conduction potential, and a fourth connection conduction potential are provided on the lower surface of the substrate, the third conduction potential, the third connection conduction potential, the fourth conduction potential, and the fourth connection conduction potential corresponding to the first conduction potential, the first connection conduction potential, the second conduction potential, and the second connection conduction potential, respectively; and the number of the first and second groups,
and a first through hole for connecting the first conducting potential and the third conducting potential, a second through hole for connecting the first connecting conducting potential and the third connecting conducting potential, a third through hole for connecting the second conducting potential and the fourth conducting potential, and a fourth through hole for connecting the second connecting conducting potential and the fourth connecting conducting potential are respectively arranged on two sides of the substrate.
8. The crosstalk-proof photosensor according to any one of claims 1 to 5, wherein the light emitting unit is an LED or a VCSEL;
the signal receiving unit is a photodiode, a phototriode or an ASIC chip.
9. An electronic device, characterized in that the electronic device comprises the crosstalk-proof photosensor of any one of claims 1 to 8.
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| CN202122495496.2U CN216849930U (en) | 2021-10-15 | 2021-10-15 | Anti-crosstalk photoelectric sensor and electronic equipment |
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| CN202122495496.2U CN216849930U (en) | 2021-10-15 | 2021-10-15 | Anti-crosstalk photoelectric sensor and electronic equipment |
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| CN216849930U true CN216849930U (en) | 2022-06-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113851459A (en) * | 2021-10-15 | 2021-12-28 | 北京易美新创科技有限公司 | Anti-crosstalk photoelectric sensor, manufacturing method thereof and electronic equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113851459A (en) * | 2021-10-15 | 2021-12-28 | 北京易美新创科技有限公司 | Anti-crosstalk photoelectric sensor, manufacturing method thereof and electronic equipment |
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