CN216597598U - 一种高性能sgt mosfet器件 - Google Patents
一种高性能sgt mosfet器件 Download PDFInfo
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- CN216597598U CN216597598U CN202122384160.9U CN202122384160U CN216597598U CN 216597598 U CN216597598 U CN 216597598U CN 202122384160 U CN202122384160 U CN 202122384160U CN 216597598 U CN216597598 U CN 216597598U
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- 101100011794 Caenorhabditis elegans epi-1 gene Proteins 0.000 claims abstract description 35
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- XUKUURHRXDUEBC-SXOMAYOGSA-N (3s,5r)-7-[2-(4-fluorophenyl)-3-phenyl-4-(phenylcarbamoyl)-5-propan-2-ylpyrrol-1-yl]-3,5-dihydroxyheptanoic acid Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-SXOMAYOGSA-N 0.000 claims abstract description 24
- 230000008021 deposition Effects 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000407 epitaxy Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 3
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- 230000005524 hole trap Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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- 229920002120 photoresistant polymer Polymers 0.000 description 2
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- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
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- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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CN202122384160.9U CN216597598U (zh) | 2021-09-29 | 2021-09-29 | 一种高性能sgt mosfet器件 |
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CN202122384160.9U CN216597598U (zh) | 2021-09-29 | 2021-09-29 | 一种高性能sgt mosfet器件 |
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Effective date of registration: 20240218 Address after: No. 1 Jinggangshan Road, Suxitong Science and Technology Industrial Park, Nantong City, Jiangsu Province, 226000 Patentee after: Jiejie Microelectronics (Nantong) Technology Co.,Ltd. Country or region after: China Address before: 214000 b-221, China Sensor Network International Innovation Park, 200 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Jiejie Microelectronics (Wuxi) Technology Co.,Ltd. Country or region before: China |