CN215869376U - IGBT module - Google Patents

IGBT module Download PDF

Info

Publication number
CN215869376U
CN215869376U CN202121881092.0U CN202121881092U CN215869376U CN 215869376 U CN215869376 U CN 215869376U CN 202121881092 U CN202121881092 U CN 202121881092U CN 215869376 U CN215869376 U CN 215869376U
Authority
CN
China
Prior art keywords
igbt
pin
packaged
igbt module
igbts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202121881092.0U
Other languages
Chinese (zh)
Inventor
秦龙
吴一凡
胡洪奇
于安博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hefei Yangguang Electric Power Technology Co ltd
Original Assignee
Hefei Yangguang Electric Power Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hefei Yangguang Electric Power Technology Co ltd filed Critical Hefei Yangguang Electric Power Technology Co ltd
Priority to CN202121881092.0U priority Critical patent/CN215869376U/en
Application granted granted Critical
Publication of CN215869376U publication Critical patent/CN215869376U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Inverter Devices (AREA)

Abstract

The utility model relates to the technical field of electronic power, in particular to an IGBT module. The IGBT module comprises a plurality of packaged IGBTs, each packaged IGBT comprises an IGBT main body part, a first pin and a second pin, the first pin and the second pin are respectively led out from two ends of the IGBT main body part, every two packaged IGBTs are arranged end to end in a staggered and side-by-side mode, and the first pins and the second pins of the two packaged IGBTs arranged end to end in a staggered and side-by-side mode are conducted to form a bridge arm, so that the packaged IGBTs are arranged more compactly and reasonably, the structure of the assembled IGBT module is more compact under the condition that a high-power IGBT module is met, the size of the IGBT module is greatly reduced, and the market competitiveness of the IGBT module is improved.

Description

IGBT module
Technical Field
The utility model relates to the technical field of electronic power, in particular to an IGBT module.
Background
The IGBT module is a modular semiconductor product formed by bridging and packaging an IGBT (Insulated Gate Bipolar Transistor) and a freewheeling diode chip through a specific circuit, and has the characteristics of energy saving, convenience in installation and maintenance, stable heat dissipation, and the like.
However, a high-power IGBT module usually needs a plurality of IGBTs for forming, and the package mode of the selected IGBTs and the arrangement mode of the IGBTs are unreasonable, so that the size of the whole IGBT module is large.
Therefore, it is desirable to provide an IGBT module with a reduced size.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide an IGBT module, which can reduce the volume of the IGBT module and enable the structure of the IGBT module to be more compact.
In order to achieve the purpose, the utility model adopts the following technical scheme:
an IGBT module, comprising:
the IGBT packaging structure comprises a plurality of packaged IGBTs, wherein each packaged IGBT comprises an IGBT main body part, a first pin and a second pin, the first pin and the second pin are respectively led out from two ends of the IGBT main body part, every two packaged IGBTs are arranged end to end in a staggered and side-by-side mode, and the first pins and the second pins of the two packaged IGBTs arranged end to end in a staggered and side-by-side mode are conducted to form a bridge arm.
Preferably, the IGBT module further includes:
and the busbar mounting frame is configured to fix the packaged IGBTs and conduct the two packaged IGBTs which are staggered end to end and arranged side by side.
As preferred scheme, crisscross two encapsulation back of arranging side by side head and tail the IGBT is first encapsulation IGBT and second encapsulation IGBT respectively, female installation frame of arranging includes:
the IGBT packaging device comprises a mounting frame, a packaging box and a power supply, wherein a containing cavity is formed in the mounting frame, and the packaged IGBT is placed in the containing cavity;
one end of the input busbar penetrates through the side wall of the mounting frame and extends into the accommodating cavity, and the first pin of the first packaging IGBT and the second pin of the second packaging IGBT are welded with the input busbar extending into the accommodating cavity; and
female arranging of output, with female arranging of input sets up relatively, female one end of arranging of output passes the lateral wall of installation frame and stretches into hold in the chamber, first encapsulation IGBT the second pin with second encapsulation IGBT first pin with stretch into hold the chamber the female welding of arranging of output.
As a preferred scheme, the input busbar is welded and conducted with the first pin and the second pin in an interference lap joint mode;
the output busbar is welded and conducted with the first pin and the second pin in an interference lap joint mode.
Preferably, the other end of the input busbar extends out of the side wall of the mounting frame, and the other end of the input busbar is of a ruler-shaped stitch structure; and/or
The other end of the output busbar extends out of the side wall of the mounting frame, and the other end of the output busbar is of a ruler-shaped stitch structure.
Preferably, the mounting frame is made of an electrical insulating material.
Preferably, the IGBT module further includes:
a heat dissipation assembly configured to dissipate heat of the packaged IGBT.
Preferably, the heat dissipation assembly includes:
the heat dissipation substrate is attached to the IGBT main body part; and
and the heat dissipation tooth sheet is arranged on the heat dissipation substrate.
Preferably, the heat dissipating substrate includes:
the heat dissipation tooth piece is arranged on the substrate main body; and
and the connecting boss is fixedly connected to the substrate main body and is attached and connected with the bottom of the IGBT main body part.
Preferably, an insulating paste is filled between the outer periphery of the IGBT body and the substrate body.
Preferably, the connection boss is connected to the bottom of the IGBT body by silver paste sintering, reflow soldering, or bonding.
The utility model has the beneficial effects that:
the utility model provides an IGBT module, which comprises a plurality of packaged IGBTs, wherein each packaged IGBT comprises an IGBT main body part, a first pin and a second pin, the first pin and the second pin are respectively led out from two ends of the IGBT main body part, each two packaged IGBTs are arranged end to end in a staggered manner, and the first pins and the second pins of the two packaged IGBTs arranged end to end in a staggered manner are conducted to form a bridge arm, so that the packaged IGBTs are arranged more compactly and reasonably, the structure of the assembled IGBT module is more compact under the condition of meeting the requirement of a high-power IGBT module, and the volume of the IGBT module is greatly reduced.
Drawings
Fig. 1 is a top view of an IGBT module according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an IGBT module according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a first view angle of a heat dissipation assembly according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a mounting frame provided by an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a second view angle of the heat dissipation assembly according to the embodiment of the present invention.
In the figure:
1. an IGBT; 10. a first package IGBT; 20. a second package IGBT; 11. an IGBT main body part; 12. a first pin; 13. a second pin; 14. a fourth pin; 15. a fifth pin;
2. a busbar mounting frame; 21. a mounting frame; 211. an accommodating chamber; 212. a first mounting hole; 213. a fourth mounting hole; 22. inputting a busbar; 23. outputting a busbar;
3. a heat dissipating component; 31. a heat-dissipating substrate; 311. a substrate main body; 3111. a third mounting hole; 312. connecting the bosses; 32. the heat dissipation tooth piece.
Detailed Description
In order to make the technical problems solved, the technical solutions adopted and the technical effects achieved by the present invention clearer, the technical solutions of the present invention are further described below by way of specific embodiments with reference to the accompanying drawings.
In the description of the present invention, unless expressly stated or limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, removably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description of the present embodiment, the terms "upper", "lower", "left", "right", and the like are used based on the orientations and positional relationships shown in the drawings only for convenience of description and simplification of operation, and do not indicate or imply that the referred device or element must have a specific orientation, be configured and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used only for descriptive purposes and are not intended to have a special meaning.
As shown in fig. 1, the present embodiment provides an IGBT module, which is a modular semiconductor product formed by bridging and packaging an IGBT and a freewheeling diode chip through a specific circuit, and has the characteristics of energy saving, convenient installation and maintenance, stable heat dissipation, and the like. The IGBT module can be welded on a PCB, so that connection between signals and strong electricity of the PCB is realized.
However, a high-power IGBT module usually needs a plurality of IGBTs for forming, and the package mode of the selected IGBTs and the arrangement mode of the IGBTs are unreasonable, so that the size of the whole IGBT module is large.
In order to solve the above problem, as shown in fig. 1 to fig. 2, the IGBT module provided in this embodiment includes a plurality of packaged IGBTs 1, each packaged IGBT 1 includes an IGBT body 11, a first pin 12, and a second pin 13, the first pin 12 and the second pin 13 are respectively led out from two ends of the IGBT body 11, each two packaged IGBTs 1 are arranged end to end in a staggered manner, and the first pin 12 and the second pin 13 of the two packaged IGBTs 1 arranged end to end in a staggered manner are conducted to form a bridge arm. This mode of setting up makes IGBT 1 after the encapsulation more compact reasonable with arranging, satisfies under the condition of powerful IGBT module for the structure of the IGBT module after the equipment is compacter, has reduced the volume of IGBT module greatly. It should be noted that, in this embodiment, the package mode adopted by the IGBT 1 is TPAK package, which can ensure that the size of the packaged IGBT 1 is small and the power is high, thereby meeting the requirement of a high-power IGBT module. The IGBT 1 packaged by TPAK further comprises a fourth pin 14 and a fifth pin 15, wherein the fourth pin 14 and the fifth pin 15 are adjacently arranged and are led out from one end of the IGBT body part 11, and the fourth pin 14 and the fifth pin 15 are arranged so as to be conveniently welded and conducted with a PCB.
In this embodiment, six packaged IGBTs 1 may be adopted, and the first pins 12 and the second pins 13 of two packaged IGBTs 1 arranged end to end in a staggered and side-by-side manner are conducted to form a bridge arm, so as to form an IGBT module with three bridge arms.
In addition, as shown in fig. 1 to 2, the IGBT module further includes a busbar mounting frame 2, the busbar mounting frame 2 is used for fixing the packaged IGBTs 1, and the two packaged IGBTs 1 arranged end to end in a staggered and side-by-side manner are conducted.
Specifically, as shown in fig. 1 to 2, two packaged IGBTs 1 arranged end to end in a staggered manner side by side are a first packaged IGBT 10 and a second packaged IGBT 20, the busbar mounting frame 2 includes a mounting frame 21, an input busbar 22 and an output busbar 23, wherein a containing cavity 211 is formed in the mounting frame 21, the packaged IGBTs 1 are placed in the containing cavity 211, one end of the input busbar 22 penetrates through a sidewall of the mounting frame 21 and extends into the containing cavity 211, a first pin 12 of the first packaged IGBT 10 and a second pin 13 of the second packaged IGBT 20 are welded to the input busbar 22 extending into the containing cavity 211, the output busbar 23 is arranged opposite to the input busbar 22, one end of the output busbar 23 penetrates through a sidewall of the mounting frame 21 and extends into the containing cavity 211, a second pin 13 of the first packaged IGBT 10 and a first pin 12 of the second packaged IGBT 20 are welded to the output busbar 23 extending into the containing cavity 211, therefore, the first packaged IGBT 10 and the second packaged IGBT 20 which are arranged end to end in a staggered and side-by-side mode are conducted to form a bridge arm. By placing the packaged IGBT 1 in the accommodating cavity 211, the soldering with the first pin 12 and the second pin 13 extending into the accommodating cavity 211 is facilitated, and the whole structure is also made more compact.
Preferably, the input busbar 22 is welded and conducted with the first pin 12 and the second pin 13 in an interference overlapping manner, so that the input busbar 22 is more stably welded with the first pin 12 and the second pin 13. In addition, the output bus bar 23 is welded and conducted with the first pin 12 and the second pin 13 in an interference lap joint mode, so that the output bus bar 23 is more stable in welding with the first pin 12 and the second pin 13. Specifically, the input busbar 22 and the output busbar 23 can be welded to the first pins 12 and the second pins 13 in a lap joint manner by laser welding. In other embodiments, the input busbar 22 and the first and second pins 12 and 13 may be in clearance fit with a fixture to achieve welding conduction, and the output busbar 23 and the first and second pins 12 and 13 may also be in clearance fit with a fixture to achieve welding conduction.
Further, in order to facilitate welding and conducting the input busbar 22 and the output busbar 23 on the PCB, the other end of the input busbar 22 extends out of the side wall of the mounting frame 21, and the other end of the input busbar 22 is of a ruler-shaped pin structure, so that welding and conducting of the input busbar 22 and the PCB are facilitated. The other end of the output bus bar 23 extends out of the side wall of the mounting frame 21, and the other end of the output bus bar 23 is of a ruler-shaped pin structure, so that the output bus bar 23 is welded and conducted with a PCB conveniently.
It should be noted that, in other embodiments, the other end of the input busbar 22 may also be a sheet structure, and the input busbar 22 is electrically connected to the PCB by a bolt connection or laser welding. And, the other end of the output bus bar 23 can also be a sheet structure, and the conduction of the output bus bar 23 and the PCB board is realized through a bolt connection mode or a laser welding mode.
In addition, in this embodiment, the mounting frame 21 is made of an electrically insulating material, so as to prevent the IGBT 1 from conducting electricity with other devices, and to realize insulation protection of the IGBT 1. In particular, the mounting frame 21 may be made of a plastic material.
Since the input bus bar 22 and the output bus bar 23 need to be soldered and connected to the PCB, the mounting frame 21 needs to be fixed to the PCB in order to stably solder the input bus bar 22 and the output bus bar 23 to the PCB. Specifically, as shown in fig. 2, a first mounting hole 212 is formed on the mounting frame 21, a second mounting hole is formed on the PCB, and the locking member sequentially passes through the second mounting hole and the first mounting hole 212 to connect the PCB and the mounting frame 21. The locking piece can be a bolt, and the bolt connection has high reliability and low cost.
In order to avoid that the IGBT 1 is overheated in the working process and the normal operation of the IGBT 1 is affected, as shown in fig. 1, the IGBT module further includes a heat dissipation component 3, the heat dissipation component 3 is fixed on the mounting frame 21, and the heat dissipation component 3 is used for dissipating heat of the packaged IGBT 1.
Referring to fig. 3, a specific structure of the heat dissipation assembly 3 is described, as shown in fig. 3, the heat dissipation assembly 3 includes a heat dissipation substrate 31 and heat dissipation fins 32, the front surface of the heat dissipation substrate 31 is attached to the IGBT body 11, the heat dissipation fins 32 are disposed on the back surface of the heat dissipation substrate 31, and heat generated by the IGBT body 11 is transferred to the heat dissipation fins 32 through the heat dissipation substrate 31, so as to achieve effective heat dissipation of the IGBT 1. Preferably, the heat dissipation substrate 31 and the heat dissipation fins 32 are made of metal, so as to improve the heat transfer and dissipation effect of the entire heat dissipation assembly 3.
Further, as shown in fig. 3, a plurality of heat dissipation fins 32 are provided, and the plurality of heat dissipation fins 32 are arranged at intervals on the back surface of the heat dissipation substrate 31, so as to improve the rapid heat transfer and dissipation of heat on the heat dissipation substrate 31. In addition, the heat dissipation fins 32 can be directly inserted into an external structural water channel for heat exchange, so that the heat dissipation effect of the IGBT 1 is improved. Particularly, the structure of heat dissipation tine 32 can adopt the cylinder structure, and a plurality of closely spaced and interval cylindrical structures who arranges have stable in structure, advantage that the radiating effect is good. In other embodiments, other configurations for the heat dissipating fins 32 are also contemplated. For example, the structure of the heat dissipating fins 32 may be a diamond-shaped tooth structure, and the diamond-shaped tooth structure has low flow resistance.
In this embodiment, it should be noted that the heat dissipating substrate 31 is sealed at one side of the accommodating cavity 211, so as to achieve the sealing connection between the heat dissipating substrate 31 and the mounting frame 21, and the PCB can be sealed at the other side of the accommodating cavity 211, so that the accommodating cavity 211 accommodating the IGBT 1 forms a closed cavity.
In addition, in order to facilitate the sealing mounting of the heat dissipating substrate 31 on the mounting frame 21, as shown in fig. 3 and 4, a third mounting hole 3111 is formed on the heat dissipating substrate 31, a fourth mounting hole 213 is formed on the mounting frame 21, and a fastener passes through the third mounting hole 3111 and then extends into the fourth mounting hole 213 to seal the heat dissipating substrate 31 on the mounting frame 21. Specifically, the third mounting hole 3111 may be a salad hole, and the fastener may be a countersunk screw, so as to ensure that the head of the countersunk screw is flush with the back surface of the heat dissipation substrate 31 after the countersunk screw passes through the third mounting hole 3111. In addition, the countersunk head screw is detachably connected, and the advantages of reliable connection and low cost are also realized.
Preferably, the third mounting holes 3111 are provided in plural, the plural third mounting holes 3111 are arranged at intervals along the edge of the heat dissipation substrate 31, and the fourth mounting holes 213 are also provided in plural correspondingly, so as to ensure a stable connection between the heat dissipation substrate 31 and the mounting frame 21. In this embodiment, six third mounting holes 3111 may be provided, which not only ensures a stable connection between the heat dissipation substrate 31 and the mounting frame 21, but also controls the cost.
Referring to fig. 5, a specific structure of the heat dissipating substrate 31 will be described, as shown in fig. 5, the heat dissipating substrate 31 includes a substrate main body 311 and a connecting boss 312, the heat dissipating fins 32 are disposed on the back surface of the substrate main body 311, the substrate main body 311 is hermetically mounted on the mounting frame 21, the connecting boss 312 is fixedly connected to the front surface of the substrate main body 311, and the connecting boss 312 is attached to the bottom of the IGBT main body 11. Through setting up connection boss 312, guarantee that radiating substrate 31 is inseparabler with the bottom laminating of IGBT main part 11 to improve radiating substrate 31 and the area of contact of IGBT main part 11, improve the radiating effect. Specifically, in the present embodiment, the substrate body 311 is opened with a third mounting hole 3111.
Preferably, when the IGBT module is in a high-voltage or humidity-sensitive application scenario, an insulating glue is filled between the periphery of the IGBT body 11 and the substrate body 311, so that an insulating effect between the IGBT 1 and the substrate body 311 is improved, conduction between the IGBT 1 and the substrate body 311 is avoided, and a protection effect is improved. When the IGBT module is in a low-voltage or normally dry application scenario, only the portion of the IGBT 1 in contact with the substrate body 311 needs to be subjected to insulation processing, for example, an insulation material is added to the portion of the IGBT 1 in contact with the substrate body 311.
Further, in order to avoid conduction between the IGBT body 11 and the connection pad 312, the surface of the connection pad 312 may be subjected to silver plating, and then the connection pad 312 may be connected to the bottom of the IGBT body 11 by silver paste sintering. The surface of the connection boss 312 may be subjected to surface treatment such as nickel plating or tin plating, and then the connection boss 312 may be connected to the bottom of the IGBT body 11 by reflow soldering. After the surface of the connection pad 312 is insulated, the connection pad 312 may be connected to the bottom of the IGBT body 11 by bonding.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.

Claims (11)

1. An IGBT module, characterized by comprising:
the IGBT packaging structure comprises a plurality of packaged IGBTs (1), wherein each packaged IGBT (1) comprises an IGBT main body part (11), a first pin (12) and a second pin (13), the first pin (12) and the second pin (13) are respectively led out from two ends of the IGBT main body part (11), every two packaged IGBTs (1) are arranged end to end in a staggered mode, and the first pins (12) and the second pins (13) of the two packaged IGBTs (1) which are arranged end to end in a staggered mode are conducted to form a bridge arm.
2. The IGBT module according to claim 1, further comprising:
the busbar mounting frame (2) is configured to fix the packaged IGBTs (1) and conduct the two packaged IGBTs (1) which are arranged end to end in a staggered and side-by-side mode.
3. The IGBT module according to claim 2, wherein the two packaged IGBTs (1) arranged end-to-end in a staggered side-by-side manner are a first packaged IGBT (10) and a second packaged IGBT (20), respectively, and the busbar mounting frame (2) comprises:
the IGBT packaging structure comprises a mounting frame (21), wherein a containing cavity (211) is formed in the mounting frame (21), and the packaged IGBT (1) is placed in the containing cavity (211);
one end of the input busbar (22) penetrates through the side wall of the mounting frame (21) and extends into the accommodating cavity (211), and the first pin (12) of the first packaged IGBT (10) and the second pin (13) of the second packaged IGBT (20) are welded with the input busbar (22) extending into the accommodating cavity (211); and
female (23) of arranging of output, with female (22) of arranging of input sets up relatively, the one end of female row of output (23) is passed the lateral wall of installation frame (21) and is stretched into hold in chamber (211), first encapsulation IGBT (10) second pin (13) with second encapsulation IGBT (20) first pin (12) with stretch into hold chamber (211) female (23) welding of arranging of output.
4. The IGBT module according to claim 3, wherein the input busbar (22) is welded and conducted with the first pin (12) and the second pin (13) in an interference lap joint mode;
the output busbar (23) is welded and conducted with the first pin (12) and the second pin (13) in an interference lap joint mode.
5. The IGBT module according to claim 3, characterized in that the other end of the input busbar (22) protrudes from the side wall of the mounting frame (21), and the other end of the input busbar (22) is of a ruler-shaped pin structure; and/or
The other end of the output bus bar (23) extends out of the side wall of the mounting frame (21), and the other end of the output bus bar (23) is of a ruler-shaped stitch structure.
6. The IGBT module according to claim 3, characterized in that the mounting frame (21) is made of an electrically insulating material.
7. The IGBT module of claim 3, further comprising:
a heat dissipation assembly (3) configured to dissipate heat of the IGBT (1) after packaging.
8. The IGBT module according to claim 7, characterized in that the heat dissipation assembly (3) comprises:
a heat dissipation substrate (31) bonded to the IGBT main body section (11); and
and a heat-dissipating fin (32) provided on the heat-dissipating substrate (31).
9. The IGBT module according to claim 8, characterized in that the heat dissipation substrate (31) comprises:
a substrate main body (311), the heat dissipating blade (32) being provided on the substrate main body (311); and
and a connection boss (312) fixedly connected to the substrate main body (311) and attached to the bottom of the IGBT main body (11).
10. The IGBT module according to claim 9, characterized in that an insulating glue is potted between the periphery of the IGBT body part (11) and the substrate body (311).
11. The IGBT module according to claim 9, wherein the connection boss (312) is connected with the bottom of the IGBT main body part (11) by silver paste sintering, reflow soldering or bonding.
CN202121881092.0U 2021-08-12 2021-08-12 IGBT module Active CN215869376U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202121881092.0U CN215869376U (en) 2021-08-12 2021-08-12 IGBT module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202121881092.0U CN215869376U (en) 2021-08-12 2021-08-12 IGBT module

Publications (1)

Publication Number Publication Date
CN215869376U true CN215869376U (en) 2022-02-18

Family

ID=80327896

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202121881092.0U Active CN215869376U (en) 2021-08-12 2021-08-12 IGBT module

Country Status (1)

Country Link
CN (1) CN215869376U (en)

Similar Documents

Publication Publication Date Title
TWI546917B (en) Power module, electricity converter and manufactoring method of power module
CN100435333C (en) Power semiconductor device
CN206807850U (en) PCB radiator structures based on QFN encapsulation
WO2022127060A1 (en) Power device packaging structure and power electronic device
CN215869376U (en) IGBT module
CN219738956U (en) Reverse-conduction IGBT module for vehicle
CN117080182A (en) GaN sealing device
CN217719583U (en) Half-bridge diode integrated device, power module and frequency converter
CN212211815U (en) Heat dissipation device and controller of power device
CN212084994U (en) Parallel packaged device group
CN210575922U (en) Packaging structure of power semiconductor device
CN210226059U (en) Frequency conversion drive plate and frequency conversion electrical apparatus
CN218829842U (en) High-efficient radiating photovoltaic terminal box
CN208581397U (en) Circuit board and charging pile
CN112259517A (en) Photovoltaic module bypass element soldering lug, bypass protection element module and junction box
CN115602672A (en) Multi-chip stacking and packaging structure
CN111463177A (en) Power module and application method thereof
CN218647917U (en) Power module
CN205900535U (en) Heavy current field effect transistor's packaging structure
CN218647940U (en) Power module
CN106449585A (en) Packaging structure of heavy current field effect transistors
CN210325791U (en) Power MOS module structure convenient for heat dissipation
CN215815870U (en) Double-chip heat-conducting patch diode
CN216928548U (en) Copper-clad ceramic plate for IGBT module
CN216624261U (en) Metal connecting piece and semiconductor product

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant