CN219738956U - Reverse-conduction IGBT module for vehicle - Google Patents
Reverse-conduction IGBT module for vehicle Download PDFInfo
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- CN219738956U CN219738956U CN202321225967.0U CN202321225967U CN219738956U CN 219738956 U CN219738956 U CN 219738956U CN 202321225967 U CN202321225967 U CN 202321225967U CN 219738956 U CN219738956 U CN 219738956U
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- sided copper
- igbt
- copper
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- 239000000919 ceramic Substances 0.000 claims abstract description 63
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 37
- 238000001746 injection moulding Methods 0.000 claims abstract description 28
- 238000001816 cooling Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 229920003023 plastic Polymers 0.000 claims description 12
- 239000004033 plastic Substances 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 239000000565 sealant Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 229910052759 nickel Inorganic materials 0.000 description 9
- 238000007747 plating Methods 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides an IGBT module for a reverse conduction vehicle, which comprises an injection molding shell positioned in the middle, wherein a cover plate is arranged on the top side of the injection molding shell, a water-cooling radiating substrate is fixedly attached to the bottom side of the injection molding shell, a plurality of double-sided copper-clad ceramic plates are arranged in the injection molding shell, the injection molding shell is connected with the double-sided copper-clad ceramic plates through ultrasonic terminal bonding, the top surface of the double-sided copper-clad ceramic plates is fixedly provided with a plurality of reverse conduction IGBT chips and an NTC resistor, FWD chips, IGBT chips and diodes are integrated in the reverse conduction IGBT chips, the plurality of reverse conduction IGBT chips are connected in parallel to form a parallel circuit, a plurality of Pin needles are erected on the periphery of the plurality of double-sided copper-clad ceramic plates by the injection molding shell, a plurality of power terminals are arranged on the side edges of the injection molding shell in a protruding mode, and the double-sided copper-clad ceramic plates are mutually connected with the reverse conduction IGBT chips/NTC resistors/Pin needles/power terminals through aluminum bonding leads. The utility model can greatly reduce the junction temperature fluctuation of the chip and improve the reliability of the device.
Description
Technical Field
The utility model belongs to the technical field of semiconductors, and relates to a power module, in particular to an IGBT module for a reverse-conduction vehicle.
Background
In general, the area ratio of the IGBT to the FWD in the conventional IGBT module is generally about 2:1, and thus the number of chips is large and the occupied area is large, resulting in an increase in the cost of soldering the chips and bonding wires. From the viewpoint of the use working condition, the intermittent operation of the IGBT chip and the FWD chip in the traditional IGBT module causes the defect of large junction temperature fluctuation. The lower the output frequency of the inverter is, the more severe the fluctuation of the IGBT junction temperature is, and especially the phenomenon is more serious under the locked-rotor working condition.
The chinese patent literature discloses an IGBT module [ chinese patent No.: 202211407537.0 the utility model provides an IGBT module, the IGBT module comprises a bottom plate, an IGBT chip set, a functional module and a terminal set, wherein a first conductive line and a second conductive line are arranged on the bottom plate, a plurality of IGBT chips are arranged on the IGBT chip set, the IGBT chips are distributed on the bottom plate and are connected with the first conductive line through bonding wires, the functional module is provided with at least one electronic component, the at least one electronic component is arranged on the bottom plate and is separated from the IGBT chips, the at least one electronic component is connected with the second conductive line through bonding wires, the terminal set comprises an IGBT terminal set and a functional terminal set, the IGBT terminal set is electrically connected with the IGBT chip set to form an IGBT topology circuit, and the IGBT module has a high-frequency switching function and an integrated composite function so as to realize the application scene that the IGBT module meets function expansion.
According to the technical scheme, the IGBT topology circuit is formed by adopting a specific circuit connection mode, so that functions are increased. However, the electronic components are not reasonably arranged, and the effect of reducing junction temperature fluctuation of the chip cannot be achieved.
Disclosure of Invention
The utility model aims to solve the problems in the prior art, and provides a reverse-conduction IGBT module for a vehicle, which improves the power circulation capacity of a device by improving the chip integrated configuration.
The aim of the utility model can be achieved by the following technical scheme: the utility model provides a reverse-conduction vehicle IGBT module, includes the shell of moulding plastics that is located the centre, the top cap of moulding plastics the shell establishes apron, the bottom side and pastes the water cooling radiating substrate admittedly, it sets up a plurality of double-sided copper-clad ceramic plates to mould plastics the shell internal arrangement, mould plastics the shell pass through ultrasonic terminal bonding with double-sided copper-clad ceramic plate is connected, the top surface of double-sided copper-clad ceramic plate is fixed a plurality of reverse-conduction IGBT chips and an NTC resistance, reverse-conduction IGBT chip internal integration has FWD chip, IGBT chip and diode, a plurality of reverse-conduction IGBT chip connects in parallel and constitutes parallel circuit, mould plastics the shell in a plurality of Pin needles are erect to the periphery of double-sided copper-clad ceramic plate, mould plastics the shell side edge protrusion a plurality of power terminals, double-sided copper-clad ceramic plate with reverse-conduction IGBT chip NTC resistance/Pin needle power terminal passes through aluminium bonding lead interconnect.
In the above-mentioned reverse-conducting vehicular IGBT module, the double-sided copper-clad ceramic plate is sequentially stacked from top to bottom to connect a copper layer, a ceramic layer, and a copper-clad layer, a printed circuit is disposed in the copper-clad layer, and the ceramic layer includes Al 2 O 3 Ceramic layer, al 2 O 3 A doped zirconia ceramic layer and an AlN ceramic layer.
In the above-mentioned reverse-conducting vehicular IGBT module, the reverse-conducting IGBT chip/the NTC resistor is soldered to the connection copper layer of the double-sided copper-clad ceramic plate by a tin sheet or a solder paste.
In the reverse-conducting vehicle IGBT module described above, the aluminum bonding wire is specifically an aluminum wire having a wire diameter in the range of 12mil to 20 mil.
In the above-mentioned reverse-conduction vehicle IGBT module, the double-sided copper-clad ceramic plate is connected to the reverse-conduction IGBT chip by 12 aluminum wires of 15mil, and the signal terminals of the reverse-conduction IGBT chip are connected to the double-sided copper-clad ceramic plate by 1 aluminum wire of 15 mil.
In the reverse-conduction vehicle IGBT module, the double-sided copper-clad ceramic plate is connected with the terminals of the NTC resistor through two 20mil aluminum wires.
In the reverse-conduction vehicle IGBT module, the double-sided copper-clad ceramic plate is connected with the power terminal through 8 aluminum wires with the thickness of 20 mil; the double-sided copper-clad ceramic plate is connected with the Pin needle through a 20mil aluminum wire.
In the above-mentioned reverse-conduction vehicle IGBT module, the bottom surface of the water-cooling heat dissipation substrate is provided with a plurality of elliptical fin columns, the top surface of the water-cooling heat dissipation substrate is provided with a nickel-plated aluminum plate or a nickel-plated copper plate, the nickel-plated aluminum plate/the nickel-plated copper plate comprises an inner aluminum layer/a copper layer and an outer nickel-plated layer, the thickness range of the nickel-plated aluminum plate/the nickel-plated copper plate is 2-10 mm, the thickness range of the outer nickel-plated layer is 1-9 μm, and the copper-clad layer of the double-sided copper-clad ceramic plate is welded on the outer nickel-plated layer through a tin sheet or solder paste.
In the reverse-conduction vehicle IGBT module, the injection molding shell and the water cooling substrate are locked through a plurality of screws in a penetrating way, and epoxy sealant is filled between the injection molding shell and the water cooling substrate to form bonding and fixing.
In the above-mentioned reverse-conduction vehicle IGBT module, the injection molding shell fills up silica gel in the cavity containing the double-sided copper-clad ceramic plate, the reverse-conduction IGBT chip, and the NTC resistor, and the cover plate seals the cavity top of the injection molding shell.
Compared with the prior art, the reverse-conduction IGBT module for the vehicle has the following beneficial effects:
1. the reverse-conduction vehicle IGBT module saves the chip area of the FWD part by integrating the FWD in the chip under the condition of keeping the chip area basically consistent with the traditional IGBT chip area, so that the total chip area is saved by about 1/3, the number of chips is reduced, the cost of welding chips and bonding binding lines is saved, and the production and manufacturing cost and the packaging test cost of the chips are greatly reduced.
2. The reverse-conduction IGBT module for the vehicle reduces the total chip area, but the effective area of the diode is doubled, so that the thermal resistance of the diode can be effectively reduced, the capability of resisting surge current of the diode is greatly improved, and the thermal resistance of the IGBT can be reduced to a certain extent.
3. In the reverse-conduction vehicle IGBT module, as the IGBT and the diode are integrated on one chip, heat generated during the alternate work of the IGBT and the diode forms a synthetic heat source, the heat dissipation paths are consistent, the junction temperature fluctuation of the chip can be greatly reduced, and the reliability of the device is improved.
Drawings
Fig. 1 is an overall exploded view of the reverse-conduction vehicle IGBT module.
Fig. 2 is a perspective view of an injection molded case in the IGBT module for a reverse-conducting vehicle.
Fig. 3 is a top view of an injection molded case in the IGBT module for the reverse-conduction vehicle.
Fig. 4 is a perspective view of a water-cooled heat dissipation substrate in the IGBT module for the reverse-conduction vehicle.
Fig. 5 is a perspective view of the whole assembly of the reverse-conduction vehicle IGBT module.
In the above-mentioned fig. 1 to 5, 1, cover plate; 2. injection molding the housing; 3. a water-cooling radiating substrate; 4. an NTC resistor; 5. reverse-conducting IGBT chips; 6. double-sided copper-clad ceramic plate; 7. a power terminal; 8. pin needles; 9. elliptic wing columns; 10. screw holes.
Detailed Description
The following are specific embodiments of the present utility model and the technical solutions of the present utility model will be further described with reference to the accompanying drawings, but the present utility model is not limited to these embodiments.
As shown in fig. 1 to 5, the IGBT module for reverse conduction vehicle comprises an injection molding shell in the middle, a cover plate is arranged on a top side cover of the injection molding shell, a water-cooling heat dissipation substrate is fixedly attached to a bottom side of the injection molding shell, a plurality of double-sided copper-clad ceramic plates are arranged in the injection molding shell, the injection molding shell is connected with the double-sided copper-clad ceramic plates through ultrasonic terminal bonding, a plurality of reverse conduction IGBT chips and an NTC resistor are fixed on the top surface of the double-sided copper-clad ceramic plates, the FWD chips, the IGBT chips and diodes are integrated in the reverse conduction IGBT chips, the plurality of reverse conduction IGBT chips are connected in parallel to form a parallel circuit, a plurality of Pin needles are erected on the periphery of the double-sided copper-clad ceramic plates by the injection molding shell, a plurality of power terminals are arranged on the side edges of the injection molding shell, and the double-sided copper-clad ceramic plates and the reverse conduction IGBT chips/NTC resistor/Pin needles/power terminals are connected with each other through aluminum bonding leads.
The reverse-conduction IGBT chips adopt parallel circuits and are staggered to avoid thermal coupling, and meanwhile, the NTC resistor plays a role in protection. The IGBT chip and the diode are connected in parallel, and the reverse-conduction IGBT integrates the IGBT chip and the diode together, and the integration technology is the prior art.
The double-sided copper-clad ceramic plate is sequentially overlapped with a copper layer, a ceramic layer and a copper-clad layer from top to bottom, a printed circuit is arranged in the copper layer, and the ceramic layer comprises Al 2 O 3 Ceramic layer, al 2 O 3 A doped zirconia ceramic layer and an AlN ceramic layer.
The reverse conducting IGBT chip/NTC resistor is welded on the connecting copper layer of the double-sided copper-clad ceramic plate through a tin sheet or tin paste.
The aluminum bonding wire is specifically an aluminum wire having a wire diameter in the range of 12mil to 20 mil.
The double-sided copper-clad ceramic plate is connected with the reverse-conduction IGBT chip through 12 15mil aluminum wires, and the signal terminal of the reverse-conduction IGBT chip is connected with the double-sided copper-clad ceramic plate through 1 15mil aluminum wire.
The double-sided copper-clad ceramic plate is connected with the terminals of the NTC resistor through two 20mil aluminum wires.
The double-sided copper-clad ceramic plate is connected with the power terminal through 8 aluminum wires with the thickness of 20 mil; the double-sided copper-clad ceramic plate is connected with the Pin needle through a 20mil aluminum wire.
The bottom surface of the water cooling substrate is provided with a plurality of elliptic fin columns, the top surface of the water cooling substrate is provided with a nickel plating aluminum plate or a nickel plating copper plate, the nickel plating aluminum plate/nickel plating copper plate comprises an inner aluminum layer/copper layer and an outer nickel plating layer, the thickness range of the nickel plating aluminum plate/nickel plating copper plate is 2-10 mm, the thickness range of the outer nickel plating layer is 1-9 mu m, and the copper-clad layer of the double-sided copper-clad ceramic plate is welded on the outer nickel plating layer through a tin sheet or tin paste. The elliptical fin columns on the bottom surface of the water-cooling radiating substrate are formed through integral stamping. The water-cooling radiating base plate adopts elliptic pin fins to indirectly water-cool and is used for improving the radiating capacity of the module.
The injection molding shell and the water cooling base plate are locked through a plurality of screws in a penetrating way, and epoxy sealant is filled between the injection molding shell and the water cooling base plate to form bonding and fixing connection. A plurality of screw holes are formed in the edge of the water-cooling radiating substrate, firm assembly of the injection molding shell and the water-cooling radiating substrate is realized through screws, and gaps between the injection molding shell and the water-cooling radiating substrate are filled through epoxy sealant to form sealing fit.
The injection molding shell is filled with silica gel in an inner cavity containing the double-sided copper-clad ceramic plate, the reverse conduction IGBT chip and the NTC resistor, and the cover plate seals the top opening of the inner cavity of the injection molding shell.
Compared with the prior art, the reverse-conduction IGBT module for the vehicle has the following beneficial effects:
1. the reverse-conduction vehicle IGBT module saves the chip area of the FWD part by integrating the FWD in the chip under the condition of keeping the chip area basically consistent with the traditional IGBT chip area, so that the total chip area is saved by about 1/3, the number of chips is reduced, the cost of welding chips and bonding binding lines is saved, and the production and manufacturing cost and the packaging test cost of the chips are greatly reduced.
2. The reverse-conduction IGBT module for the vehicle reduces the total chip area, but the effective area of the diode is doubled, so that the thermal resistance of the diode can be effectively reduced, the capability of resisting surge current of the diode is greatly improved, and the thermal resistance of the IGBT can be reduced to a certain extent.
3. In the reverse-conduction vehicle IGBT module, as the IGBT and the diode are integrated on one chip, heat generated during the alternate work of the IGBT and the diode forms a synthetic heat source, the heat dissipation paths are consistent, the junction temperature fluctuation of the chip can be greatly reduced, and the reliability of the device is improved.
The specific embodiments described herein are offered by way of example only to illustrate the spirit of the utility model. Those skilled in the art may make various modifications or additions to the described embodiments or substitutions thereof without departing from the spirit of the utility model or exceeding the scope of the utility model as defined in the accompanying claims.
Although cover plates are used more herein; injection molding the housing; a water-cooling radiating substrate; an NTC resistor; reverse-conducting IGBT chips; double-sided copper-clad ceramic plate; a power terminal; pin needles; elliptic wing columns; screw holes, and the like, but does not exclude the possibility of using other terms. These terms are used merely for convenience in describing and explaining the nature of the utility model; they are to be interpreted as any additional limitation that is not inconsistent with the spirit of the present utility model.
In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
Claims (10)
1. The utility model provides a reverse-conduction automobile-used IGBT module, includes the shell of moulding plastics that is located the centre, its characterized in that, the top cap of moulding plastics the shell establishes apron, the bottom side and pastes the water-cooled radiating substrate admittedly, it sets up a plurality of double-sided copper-clad ceramic plates to mould plastics the shell internal arrangement, mould plastics the shell through ultrasonic terminal bonding with double-sided copper-clad ceramic plate is connected, the top surface of double-sided copper-clad ceramic plate is fixed a plurality of reverse-conduction IGBT chips and an NTC resistance, reverse-conduction IGBT chip internal integration has FWD chip, IGBT chip and diode, a plurality of reverse-conduction IGBT chip connects in parallel and constitutes parallel circuit, mould plastics the shell in a plurality of double-sided copper-clad ceramic plate's week side erects a plurality of Pin needles, mould plastics the shell side edge is protruding to set up a plurality of power terminals, double-sided copper-clad ceramic plate with reverse-conduction IGBT chip/NTC resistance/Pin needle/power terminal passes through aluminium bonding lead interconnect.
2. The reverse-conducting vehicular IGBT module according to claim 1, wherein the double-sided copper-clad ceramic plate is sequentially stacked from top to bottom with a copper layer, a ceramic layer and a copper-clad layer, a printed circuit is provided in the copper layer, and the ceramic layer includes Al 2 O 3 Ceramic layer, al 2 O 3 A doped zirconia ceramic layer and an AlN ceramic layer.
3. The reverse-conducting vehicular IGBT module according to claim 2, wherein the reverse-conducting IGBT chip/the NTC resistor is soldered to the connection copper layer of the double-sided copper-clad ceramic board by a tin sheet or a solder paste.
4. The reverse-conducting vehicle IGBT module of claim 1 wherein the aluminum bonding wire is specifically an aluminum wire having a wire diameter in the range of 12mil to 20 mil.
5. The reverse-conducting vehicular IGBT module of claim 4 wherein the double-sided copper-clad ceramic plate and the reverse-conducting IGBT chip are connected by 12 15mil aluminum wires, and the signal terminals of the reverse-conducting IGBT chip are connected by 1 15mil aluminum wire.
6. The reverse-conducting vehicular IGBT module of claim 4 wherein the double-sided copper-clad ceramic plate and the terminals of the NTC resistor are connected by two 20mil aluminum wires.
7. The reverse-conducting vehicular IGBT module of claim 4 wherein the double-sided copper-clad ceramic plate is connected to the power terminals by 8 20mil aluminum wires; the double-sided copper-clad ceramic plate is connected with the Pin needle through a 20mil aluminum wire.
8. The IGBT module for reverse-turn-on vehicle according to claim 2, wherein the bottom surface of the water-cooling substrate is provided with a plurality of elliptical fin columns, the top surface of the water-cooling substrate is provided with a nickel-plated aluminum plate or a nickel-plated copper plate, the nickel-plated aluminum plate/the nickel-plated copper plate comprises an inner aluminum layer/a copper layer and an outer nickel-plated layer, the thickness range of the nickel-plated aluminum plate/the nickel-plated copper plate is 2-10 mm, the thickness range of the outer nickel-plated layer is 1-9 μm, and the copper-clad layer of the double-sided copper-clad ceramic plate is welded on the outer nickel-plated layer through a tin sheet or a tin paste.
9. The reverse-conduction vehicle IGBT module according to claim 1, wherein the injection molding shell and the water cooling substrate are locked by a plurality of screws in a penetrating way, and epoxy sealant is filled between the injection molding shell and the water cooling substrate to form bonding and fixing.
10. The reverse-conducting vehicle IGBT module of claim 1 wherein the injection molded housing is filled with silicone gel in an interior cavity containing the double-sided copper-clad ceramic plate, the reverse-conducting IGBT chip, and the NTC resistor, and the cover plate covers an interior cavity top opening of the injection molded housing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321225967.0U CN219738956U (en) | 2023-05-17 | 2023-05-17 | Reverse-conduction IGBT module for vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321225967.0U CN219738956U (en) | 2023-05-17 | 2023-05-17 | Reverse-conduction IGBT module for vehicle |
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| Publication Number | Publication Date |
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| CN219738956U true CN219738956U (en) | 2023-09-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202321225967.0U Active CN219738956U (en) | 2023-05-17 | 2023-05-17 | Reverse-conduction IGBT module for vehicle |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637674A (en) * | 2024-01-03 | 2024-03-01 | 广东巨风半导体有限公司 | IGBT module and production method |
| CN118486669A (en) * | 2024-07-15 | 2024-08-13 | 浙江翠展微电子有限公司 | High-robustness power module encapsulated by liquid epoxy |
-
2023
- 2023-05-17 CN CN202321225967.0U patent/CN219738956U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637674A (en) * | 2024-01-03 | 2024-03-01 | 广东巨风半导体有限公司 | IGBT module and production method |
| CN118486669A (en) * | 2024-07-15 | 2024-08-13 | 浙江翠展微电子有限公司 | High-robustness power module encapsulated by liquid epoxy |
| CN118486669B (en) * | 2024-07-15 | 2024-09-17 | 浙江翠展微电子有限公司 | High-robustness power module encapsulated by liquid epoxy |
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