CN215771112U

CN215771112U - Gallium nitride semiconductor device with epitaxial structure

Info

Publication number: CN215771112U
Application number: CN202121491285.5U
Authority: CN
Inventors: 仇亮
Original assignee: Guangdong Renmao Electronic Co ltd
Current assignee: Guangdong Renmao Electronic Co ltd
Priority date: 2021-07-02
Filing date: 2021-07-02
Publication date: 2022-02-08
Anticipated expiration: 2031-07-02

Abstract

The utility model discloses a gallium nitride semiconductor device with an epitaxial structure, which relates to the field of semiconductors and comprises a device body, wherein a chip is arranged on the device body, a first protection plate and a second protection plate are symmetrically arranged on the device body, buffer grooves are respectively formed in the first protection plate and the second protection plate, two telescopic sliding shafts are symmetrically and fixedly arranged on the inner wall of the top of each buffer groove, telescopic sleeves are sleeved on the telescopic sliding shafts in a sliding mode, lower pressing plates are fixedly arranged at the bottoms of the telescopic sleeves, the chips of the lower pressing plates are in contact with each other, two positioning sliding holes are symmetrically formed in the telescopic sleeves, and positioning sliding blocks are respectively and slidably arranged in the two positioning sliding holes. According to the utility model, the chip is fixed through the arrangement of the lower pressing plate, so that the problem that the chip falls off due to the fact that the chip generates heat when in work and the adhesive melts is avoided, the function of improving the mounting stability of the chip is achieved, and the use stability of the device body is further improved.

Description

Gallium nitride semiconductor device with epitaxial structure

Technical Field

The utility model relates to the technical field of semiconductors, in particular to a gallium nitride semiconductor device with an epitaxial structure.

Background

The semiconductor device is a semiconductor device made by utilizing a metal contact semiconductor layer, and compared with a semiconductor diode in the traditional sense, the semiconductor device has the characteristic of extremely short reverse recovery time, so the semiconductor device is widely applied to circuits such as a switching power supply, a frequency converter, a driver and the like, and a gallium nitride material is a third-generation wide-bandgap semiconductor material, and becomes an optimal material for manufacturing short-wave photoelectronic devices and high-voltage high-frequency high-power devices due to the characteristics of large forbidden band width, high electronic saturation rate, high breakdown electric field, high thermal conductivity, corrosion resistance, radiation resistance and the like.

The patent with the application number of 201921606996.5 provides a gallium nitride epitaxial layer and a semiconductor device, and the technical problem that the reverse electric leakage of the semiconductor device is large is solved, but the chip in the patent generally uses glue to fix the chip on the device body when fixed, so that the glue melts after the chip generates heat in use, and then the problem that the chip drops is caused, and therefore the gallium nitride semiconductor device with the epitaxial structure is required to meet the requirements of people.

SUMMERY OF THE UTILITY MODEL

The present invention provides a gallium nitride semiconductor device with an epitaxial structure, so as to solve the problem that the chip proposed in the above background art generates heat during the use process, which causes the melting of glue, and the chip falls off.

In order to achieve the purpose, the utility model provides the following technical scheme: the utility model provides a gallium nitride semiconductor device with epitaxial structure, includes the device body, install the chip on the device body, first protection shield and second protection shield are installed to the symmetry on the device body, have all seted up the dashpot on first protection shield and the second protection shield, and symmetry fixed mounting has two flexible sliding shafts on the top inner wall of dashpot, the telescopic tube has been cup jointed in the last slip of flexible sliding shaft, and telescopic tube's bottom fixed mounting has the holding down plate, and the holding down plate chip contacts, two location slide holes have been seted up to the symmetry on the telescopic tube, and equal slidable mounting has the location slider in two location slide holes, and two location sliders all fix on flexible sliding shaft, symmetry fixed mounting has four limit stop on the device body, and two limit stop with one side contact with first protection shield and second protection shield respectively.

Preferably, a sliding clamping groove is formed in the second protection plate, an installation clamping groove is formed in the inner wall of one side of the sliding clamping groove, and two limiting plates are symmetrically and slidably installed in the installation clamping groove.

Preferably, a pressing sliding hole is formed in the inner wall of the top of the mounting clamping groove, a U-shaped pressing block is slidably mounted in the pressing sliding hole, and two ends of the U-shaped pressing block are fixedly mounted on the two limiting plates respectively.

Preferably, a connecting sliding plate is arranged in the sliding clamping groove in a sliding mode, one end of the connecting sliding plate is fixedly connected to the first protection plate, and a clamping plate is fixedly arranged at the other end of the connecting sliding plate.

Preferably, the limiting plate is provided with a limiting groove, and the limiting groove is matched with the clamping plate.

Preferably, a spring groove is formed in the inner wall of the pressing sliding hole, an expansion spring is sleeved in the spring groove in a sliding mode, one end of the expansion spring is in contact with the U-shaped pressing block, and the other end of the expansion spring is in contact with the inner wall of the spring groove.

Preferably, the same pressing spring is sleeved on the telescopic sliding shaft and the telescopic sleeve in a sliding mode, one end of the pressing spring is in contact with the lower pressing plate, and the other end of the pressing spring is in contact with the inner wall of the buffer groove.

The utility model has the beneficial effects that:

according to the utility model, the chip is fixed through the arrangement of the lower pressing plate, so that the problem that the chip falls off due to the fact that the chip generates heat when in work and the adhesive melts is avoided, the function of improving the mounting stability of the chip is achieved, and the use stability of the device body is further improved.

According to the utility model, the device body is shielded by arranging the first protection plate and the second protection plate, so that the problem of dust falling of the device body is avoided, the problem that an internal circuit is burnt once dust enters the inside of a chip is solved, the operation stability of the device body is ensured, and the function of protecting the device body is achieved.

Drawings

FIG. 1 is a schematic structural diagram of a GaN semiconductor device with an epitaxial structure according to the present invention;

FIG. 2 is a schematic view of a connection structure of a device body in a GaN semiconductor device with an epitaxial structure according to the present invention;

FIG. 3 is a schematic cross-sectional view of a telescopic sliding shaft in a GaN semiconductor device with an epitaxial structure according to the present invention;

FIG. 4 is a schematic cross-sectional view of a lower platen of a GaN semiconductor device with an epitaxial structure according to the present invention;

FIG. 5 is an enlarged schematic view of a portion A of the GaN semiconductor device with an epitaxial structure according to the present invention;

fig. 6 is a schematic cross-sectional structural view of a U-shaped pressing block in a gan semiconductor device with an epitaxial structure according to the present invention.

In the figure: 1. a device body; 2. a chip; 3. a limit stop block; 4. a first protective plate; 5. a second protective plate; 6. a buffer tank; 7. a telescopic sliding shaft; 8. a telescopic sleeve; 9. a lower pressing plate; 10. a pressing spring; 11. connecting a sliding plate; 12. clamping a plate; 13. a sliding clamping groove; 14. installing a clamping groove; 15. a limiting plate; 16. a limiting groove; 17. a U-shaped pressing block; 18. pressing the sliding hole; 19. a spring slot; 20. a tension spring; 21. positioning a slide hole; 22. and positioning the slide block.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.

Referring to fig. 1-6, a gallium nitride semiconductor device with an epitaxial structure comprises a device body 1, a chip 2 is mounted on the device body 1, a first protection plate 4 and a second protection plate 5 are symmetrically mounted on the device body 1, buffer grooves 6 are respectively formed on the first protection plate 4 and the second protection plate 5, two telescopic sliding shafts 7 are symmetrically and fixedly mounted on the inner wall of the top of the buffer groove 6, telescopic sleeves 8 are slidably sleeved on the telescopic sliding shafts 7, a lower pressing plate 9 is fixedly mounted at the bottom of the telescopic sleeves 8, the lower pressing plate 9 is in contact with the chip 2, two positioning sliding holes 21 are symmetrically formed on the telescopic sleeves 8, positioning sliders 22 are respectively slidably mounted in the two positioning sliding holes 21, the two positioning sliders 22 are respectively fixed on the telescopic sliding shafts 7, four limit stoppers 3 are symmetrically and fixedly mounted on the device body 1, the two limit stoppers 3 on the same side are respectively in contact with the first protection plate 4 and the second protection plate 5, the lower pressure plate 9 is pressed against the chip 2 under the pushing of the pressing spring 10 to ensure the mounting stability of the chip 2.

In the utility model, the second protective plate 5 is provided with a sliding clamping groove 13, the inner wall of one side of the sliding clamping groove 13 is provided with an installation clamping groove 14, two limiting plates 15 are symmetrically and slidably installed in the installation clamping groove 14, and the installation clamping groove 14 is used for facilitating the sliding of the limiting plates 15.

In the utility model, a pressing sliding hole 18 is formed in the inner wall of the top of the mounting clamping groove 14, a U-shaped pressing block 17 is slidably mounted in the pressing sliding hole 18, two ends of the U-shaped pressing block 17 are respectively and fixedly mounted on the two limiting plates 15, and the U-shaped pressing block 17 drives the two limiting plates 15 to move up and down when sliding in the pressing sliding hole 18.

According to the utility model, the connecting sliding plate 11 is slidably mounted in the sliding slot 13, one end of the connecting sliding plate 11 is fixedly connected to the first protection plate 4, the other end of the connecting sliding plate 11 is fixedly provided with the clamping plate 12, and both the connecting sliding plate 11 and the clamping plate 12 are used for fixing the first protection plate 4.

In the utility model, the limiting plate 15 is provided with a limiting groove 16, the limiting groove 16 is matched with the clamping plate 12, and the limiting groove 16 is clamped with the clamping plate 12 to complete the fixation between the first protective plate 4 and the second protective plate 5.

In the utility model, a spring groove 19 is formed on the inner wall of the pressing slide hole 18, an extension spring 20 is sleeved in the spring groove 19 in a sliding manner, one end of the extension spring 20 is contacted with the U-shaped pressing block 17, the other end of the extension spring 20 is contacted with the inner wall of the spring groove 19, and the extension spring 20 is used for supporting the U-shaped pressing block 17 to reset.

In the utility model, the same pressing spring 10 is sleeved on the telescopic sliding shaft 7 and the telescopic sleeve 8 in a sliding manner, one end of the pressing spring 10 is in contact with the lower pressing plate 9, the other end of the pressing spring 10 is in contact with the inner wall of the buffer groove 6, and the lower pressing plate 9 can be tightly attached to the chip 2 under the action of the pressing spring 10, so that the installation stability of the chip 2 is ensured.

The working principle of the utility model is as follows:

fixing the first protection plate 4 and the second protection plate 5 on the device body 1 through the limit stop 3, making the lower pressing plate 9 contact with the chip 2, inserting the connecting sliding plate 11 into the sliding slot 13, making the clamping plate 12 interact with the limit plate 15, and making the clamping plate 12 snap into the limit slot 16, completing the fixing of the connecting sliding plate 11, and completing the fixing between the first protection plate 4 and the second protection plate 5, at the same time, making the lower pressing plate 9 cling to the chip 2 under the pushing of the pressing spring 10 to ensure the installation stability of the chip 2, when the first protection plate 4 and the second protection plate 5 need to be detached, pressing the U-shaped pressing block 17, making the U-shaped pressing block 17 slide downwards in the pressing sliding hole 18, and further driving the two limit plates 15 to slide downwards, making the clamping plate 12 disengage from the limit slot 16, completing the unlocking between the clamping plate 12 and the limit slot 16, wherein, the positioning sliding hole 21 interacts with the positioning slider 22 to ensure the sliding stability of the telescopic sleeve 8, meanwhile, the telescopic sleeve 8 is prevented from falling off from the telescopic sliding shaft 7, and the telescopic spring 20 is used for driving the U-shaped pressing block 17 to reset.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and equivalent alternatives or modifications according to the technical solution of the present invention and the inventive concept thereof should be covered by the scope of the present invention.

Claims

1. The utility model provides a gallium nitride semiconductor device with epitaxial structure, includes device body (1), install chip (2) on device body (1), its characterized in that: a first protection plate (4) and a second protection plate (5) are symmetrically arranged on the device body (1), buffer grooves (6) are respectively formed in the first protection plate (4) and the second protection plate (5), two telescopic sliding shafts (7) are symmetrically and fixedly arranged on the inner wall of the top of each buffer groove (6), the telescopic sliding shaft (7) is sleeved with a telescopic sleeve (8) in a sliding manner, the bottom of the telescopic sleeve (8) is fixedly provided with a lower pressing plate (9), the lower pressing plate (9) is contacted with the chip (2), two positioning slide holes (21) are symmetrically arranged on the telescopic sleeve (8), positioning slide blocks (22) are respectively arranged in the two positioning slide holes (21) in a sliding way, the two positioning slide blocks (22) are respectively fixed on the telescopic slide shaft (7), the device body (1) is symmetrically and fixedly provided with four limit stops (3), and the two limit stops (3) on the same side are respectively contacted with the first protection plate (4) and the second protection plate (5).

2. A gallium nitride semiconductor device provided with an epitaxial structure according to claim 1, wherein: the sliding clamping groove (13) is formed in the second protective plate (5), the installation clamping groove (14) is formed in the inner wall of one side of the sliding clamping groove (13), and the two limiting plates (15) are symmetrically and slidably installed in the installation clamping groove (14).

3. A gallium nitride semiconductor device provided with an epitaxial structure according to claim 2, wherein: the installation clamping groove is characterized in that a pressing sliding hole (18) is formed in the inner wall of the top of the installation clamping groove (14), a U-shaped pressing block (17) is installed in the pressing sliding hole (18) in a sliding mode, and two ends of the U-shaped pressing block (17) are fixedly installed on the two limiting plates (15) respectively.

4. A gallium nitride semiconductor device provided with an epitaxial structure according to claim 2, wherein: sliding installation has connection slide (11) in sliding groove (13), and the one end fixed connection of connecting slide (11) is on first protection plate (4), and the other end fixed mounting of connecting slide (11) has cardboard (12).

5. A gallium nitride semiconductor device provided with an epitaxial structure according to claim 2, wherein: the limiting plate (15) is provided with a limiting groove (16), and the limiting groove (16) is matched with the clamping plate (12).

6. A gallium nitride semiconductor device provided with an epitaxial structure according to claim 3, wherein: the inner wall of the pressing sliding hole (18) is provided with a spring groove (19), an extension spring (20) is sleeved in the spring groove (19) in a sliding mode, one end of the extension spring (20) is in contact with the U-shaped pressing block (17), and the other end of the extension spring (20) is in contact with the inner wall of the spring groove (19).

7. A gallium nitride semiconductor device provided with an epitaxial structure according to claim 1, wherein: the telescopic sliding shaft (7) and the telescopic sleeve (8) are sleeved with the same pressing spring (10) in a sliding mode, a lower pressing plate (9) at one end of the pressing spring (10) is in contact, and the other end of the pressing spring (10) is in contact with the inner wall of the buffer groove (6).