CN214707517U - Silicon carbide MOSFET gate drive amplitude limiting internal drive protection device - Google Patents
Silicon carbide MOSFET gate drive amplitude limiting internal drive protection device Download PDFInfo
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- CN214707517U CN214707517U CN202023331328.1U CN202023331328U CN214707517U CN 214707517 U CN214707517 U CN 214707517U CN 202023331328 U CN202023331328 U CN 202023331328U CN 214707517 U CN214707517 U CN 214707517U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The utility model relates to a silicon carbide MOSFET grid drive amplitude limiting internal drive protection device, which comprises a main chip and a base plate, wherein one side of a metal plate is provided with a grid electrode, a drain electrode, a source electrode and a metal electrode; the outer surface of the metal plate is provided with a packaging shell; the main chip is provided with a first contact, a second contact and a third contact, the leading-out end of the first contact is a grid electrode, the leading-out end of the second contact is a drain electrode, and the leading-out end of the third contact is a source electrode; a current-limiting resistor and a voltage-stabilizing tube are arranged on the substrate, a second point position of the current-limiting resistor is electrically connected with a second point position of the voltage-stabilizing tube, a first point position of the current-limiting resistor is electrically connected with the grid electrode, and a first point position of the voltage-stabilizing tube is electrically connected with the source electrode; a second point position of the voltage-stabilizing tube is connected with a first contact on the main chip, and a third contact is electrically connected with the source electrode; the metal pole is electrically connected with the second contact. The internal driving protection device limits the gate driving voltage within a safe range, and effectively solves the problem that the gate driving voltage is broken down; an external protection circuit is not required to be introduced, and the assembly is simple and convenient.
Description
Technical Field
The utility model belongs to the technical field of carborundum, concretely relates to drive protection device in carborundum MOSFET bars range of driving restriction.
Background
In power electronic conversion technology, high frequency, miniaturization, and high reliability are the main development directions. At present, silicon carbide is a semiconductor material which is developed more maturely at present, has high voltage resistance compared with components of common silicon, and is widely applied to a switching power supply, a high-frequency bridge circuit push-pull and a rectifier. The silicon carbide MOS FET is used as a novel power device and has the characteristics of high withstand voltage, high working temperature, high frequency switching speed, short body diode reverse recovery time, small parasitic capacitance and the like, so that the power density of the power electronic converter can be obviously improved by adopting the silicon carbide MOSFET.
The silicon carbide MOSFET and the silicon MOSFET have some differences in device characteristics due to differences in materials, structures, and the like. The silicon MOSFET driving circuit is characterized by high consistency when in use, the driving voltage range of the current silicon MOSFET is-30V- +30V, the driving voltage range of the silicon carbide MOSFET is-8V- +20V, and the driving voltage is recommended to be-4V- +20V, so that the silicon carbide MOSFET has a small safety threshold compared with the current silicon MOSFET, one voltage peak of the driving circuit can break down a fragile gate oxide layer on the silicon carbide MOSFET, and the gate oxide layer can be broken down, thereby causing circuit failure. When in actual use, an external circuit is adopted for protection, but the protection effect is poor due to the influence of distributed parameter parasitic inductance, and the problem of poor working stability of the silicon carbide MOSFET cannot be solved from the root.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is: in order to overcome the defects, the utility model provides a silicon carbide MOSFET grid driving amplitude limiting internal driving protection device, which limits the grid driving voltage in a safe range and effectively solves the problem that the grid driving voltage is punctured; the internal driving protection device carries out current-limiting protection through the voltage-stabilizing tube packaged in the silicon carbide MOSFET, effectively limits the silicon carbide MOSFET to reach the amplitude and improves the reliability of the power electronic converter; an external protection circuit is not required to be introduced, and the assembly is simple and convenient.
The utility model provides a technical scheme that its technical problem adopted as follows: a silicon carbide MOSFET gate drive amplitude limiting internal drive protection device comprises a main chip and a substrate, wherein the main chip and the substrate are respectively arranged on the same plane of a metal plate, and a gate, a drain, a source and a metal electrode are arranged on one side of the metal plate; the outer surface of the metal plate is provided with a packaging shell;
the main chip is provided with a first contact, a second contact and a third contact, the leading-out end of the first contact is a grid electrode, the leading-out end of the second contact is a drain electrode, the leading-out end of the third contact is a source electrode, and the first contact, the second contact and the third contact are arranged in different areas of the main chip;
the substrate is provided with a current-limiting resistor and a voltage-stabilizing tube, the second point position of the current-limiting resistor is electrically connected with the second point position of the voltage-stabilizing tube, the first point position of the current-limiting resistor is electrically connected with the grid electrode, and the first point position of the voltage-stabilizing tube is electrically connected with the source electrode; the second point position of the voltage-stabilizing tube is connected with the first contact on the main chip, and the third contact is electrically connected with the source electrode; the metal pole is electrically connected with the second contact.
The silicon carbide MOSFET is powered by a power supply, a limiting current is contained in a current limiting resistor after grid driving power supply, a grid driving voltage is provided for the silicon carbide MOSFET, a voltage stabilizing tube connected with the current limiting resistor in series is introduced, when the grid driving voltage is a reverse negative voltage, amplitude limitation is carried out on forward clamping of the voltage stabilizing tube formed by the current limiting resistor and the voltage stabilizing tube, and when the MOSFET grid driving is a positive voltage, reverse amplitude limitation of the voltage stabilizing tube is formed by the current limiting resistor and the voltage stabilizing tube, so that positive and negative pulse voltage amplitude limitation of grid driving is realized, the grid driving voltage amplitude limitation of the silicon carbide MOSFET is realized, and the problem that the grid driving voltage is broken down is effectively solved; the grid drive protection circuit composed of the current-limiting resistor and the voltage-stabilizing tube is arranged in the packaging shell, when the protection device is used, an additional protection circuit is not required to be introduced, the arrangement of an external circuit is simplified, the structure is simple, the use is convenient, and the requirements of high frequency and miniaturization of various switching power supply converters such as power electronics and the like are met; the protection device is a special protection circuit for the silicon carbide MOSFET, is not suitable for the silicon MOSFET and has specificity.
Further, the substrate is one of a porcelain substrate, a polyethylene plate or a mica plate, and the metal plate is a copper plate. The drive protection device adopts a ceramic substrate, a polyethylene plate and the like as mounting substrates, is a carrier of a protection circuit formed by a current-limiting resistor and a voltage-stabilizing tube electric connection circuit for clamping limitation, has good insulating property, does not generate the conditions of electric leakage, creepage and the like, and also has good heat dissipation effect and can adapt to the high-temperature characteristic of a silicon carbide MOSFET; the copper plate is used as the metal plate, so that the copper plate has good conductive performance and good heat dissipation performance, the area of the radiator back plate in the power electronic converter can be simplified, and the requirement of miniaturization is further met.
Furthermore, the current-limiting resistor is a resistor chip, and the voltage-stabilizing tube is a voltage-stabilizing tube chip. The current-limiting resistor and the voltage-stabilizing tube adopt corresponding functional chips, so that the silicon carbide MOSFET structure is smaller, and the packaging of the packaging shell is facilitated.
Furthermore, the voltage regulator tube is a TVS tube, and a transient suppression diode (TVS) is adopted, so that the voltage regulator tube can clamp the high voltage pulse of spike static electricity in the driving circuit within a control range, further protects a silicon carbide MOSFET element, is stable in use and has long service life.
The utility model has the advantages that:
1. the silicon carbide MOSFET is powered by a power supply, a limiting current is contained in a current limiting resistor after grid driving power supply, a grid driving voltage is provided for the silicon carbide MOSFET, a voltage stabilizing tube connected with the current limiting resistor in series is introduced, when the grid driving voltage is a reverse negative voltage, amplitude limitation is carried out on forward clamping of the voltage stabilizing tube formed by the current limiting resistor and the voltage stabilizing tube, and when the MOSFET grid driving is a positive voltage, reverse amplitude limitation of the voltage stabilizing tube is formed by the current limiting resistor and the voltage stabilizing tube, so that positive and negative pulse voltage amplitude limitation of grid driving is realized, the grid driving voltage amplitude limitation of the silicon carbide MOSFET is realized, and the problem that the grid driving voltage is broken down is effectively solved; the grid drive protection circuit composed of the current-limiting resistor and the voltage-stabilizing tube is arranged in the packaging shell, when the protection device is used, an additional protection circuit is not required to be introduced, the arrangement of an external circuit is simplified, the structure is simple, the use is convenient, and the requirements of high frequency and miniaturization of various switching power supply converters such as power electronics and the like are met; the protection device is a special protection circuit for the silicon carbide MOSFET, is not suitable for the silicon MOSFET and has specificity.
2. The first contact of the main chip is connected with the first contact of the voltage regulator tube, so that only a current limiting resistor can be selected to work, and the driving protection device effectively protects a grid oxide layer of the silicon carbide MOSFET chip from being damaged; the drive protection device adopts a ceramic substrate, a polyethylene plate and the like as mounting substrates, is a carrier of a protection circuit formed by a current-limiting resistor and a voltage-stabilizing tube electric connection circuit for clamping limitation, has good insulating property, does not generate the conditions of electric leakage, creepage and the like, and also has good heat dissipation effect and can adapt to the high-temperature characteristic of a silicon carbide MOSFET; the copper plate is used as the metal plate, so that the copper plate has good conductive performance and good heat dissipation performance, the area of the radiator back plate in the power electronic converter can be simplified, and the requirement on miniaturization is further met; the current-limiting resistor and the clamping voltage-stabilizing tube adopt corresponding functional chips, so that the silicon carbide MOSFET structure is smaller, and the packaging of the packaging shell is facilitated.
Drawings
The foregoing and other objects, features, and advantages of the invention will be apparent from the following detailed description taken in conjunction with the accompanying drawings.
Fig. 1 is a schematic structural view of a hidden packaging shell of the internal driving protection device of the present invention;
FIG. 2 is a schematic view of another angle protection device according to the present invention;
fig. 3 is a schematic circuit diagram of the internal driving protection device of the present invention;
wherein: the chip comprises a main chip 1, a first contact 11, a second contact 12, a third contact 13, a substrate 2, a current-limiting resistor 21, a first point of the current-limiting resistor 211, a second point of the current-limiting resistor 213, a voltage regulator tube 22, a first point of the voltage regulator tube 221, a second point of the voltage regulator tube 222, a metal plate 3, a grid 31, a drain 32, a source 33, a metal electrode 34 and a packaging shell 4.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1-3, a silicon carbide MOSFET gate drive amplitude limiting internal drive protection device includes a main chip 1 and a substrate 2, where the main chip 1 and the substrate 2 are respectively disposed on the same plane of a metal plate 3, and a gate 31, a drain 32, a source 33, and a metal electrode 34 are disposed on one side of the metal plate 3; the outer surface of the metal plate 3 is provided with a packaging shell 4;
the main chip 1 is provided with a first contact 11, a second contact 12 and a third contact 13, the leading-out end of the first contact 11 is a grid 31, the leading-out end of the second contact 12 is a drain 32, the leading-out end of the third contact 13 is a source 33, and the first contact 11, the second contact 12 and the third contact 13 are arranged in different regions of the main chip 1;
a current limiting resistor 21 and a voltage regulator tube 22 are arranged on the substrate 2, and the voltage regulator tube 22 is a TVS tube; the second point 213 of the current-limiting resistor is electrically connected with the second point 222 of the voltage regulator tube, the first point 211 of the current-limiting resistor is electrically connected with the grid 31, and the first point 221 of the voltage regulator tube is electrically connected with the source 33; the second voltage regulator tube point 222 is connected with the first contact 11 on the main chip 1, and the third contact 13 is electrically connected with the source 33; the first contact 11 of the main chip 1 is electrically connected with a first point 221 of a voltage regulator tube; the metal pole 34 is electrically connected with the second contact 12;
in order to meet the miniaturization requirement, the current-limiting resistor 21 is a resistor chip, and the voltage regulator tube 22 is a voltage regulator tube 22 chip.
The substrate 2 is one of a ceramic substrate 2, a polyethylene board or a mica board, and in order to ensure good heat dissipation and carbon deposition formation of the current limiting resistor 21 on the substrate 2, the substrate 2 is preferably the ceramic substrate 2; the metal plate 3 is a copper plate.
The silicon carbide MOSFET is powered by a power supply, a limiting current is contained in a current limiting resistor after grid driving power supply, a grid driving voltage is provided for the silicon carbide MOSFET, a voltage stabilizing tube connected with the current limiting resistor in series is introduced, when the grid driving voltage is a reverse negative voltage, amplitude limitation is carried out on forward clamping of the voltage stabilizing tube formed by the current limiting resistor and the voltage stabilizing tube, and when the MOSFET grid driving is a positive voltage, reverse amplitude limitation of the voltage stabilizing tube is formed by the current limiting resistor and the voltage stabilizing tube, so that positive and negative pulse voltage amplitude limitation of grid driving is realized, the grid driving voltage amplitude limitation of the silicon carbide MOSFET is realized, and the problem that the grid driving voltage is broken down is effectively solved; the grid drive protection circuit composed of the current-limiting resistor and the voltage-stabilizing tube is arranged in the packaging shell, when the protection device is used, an additional protection circuit is not required to be introduced, the arrangement of an external circuit is simplified, the structure is simple, the use is convenient, and the requirements of high frequency and miniaturization of various switching power supply converters such as power electronics and the like are met; the protection device is a special protection circuit for the silicon carbide MOSFET, is not suitable for the silicon MOSFET and has specificity.
In light of the foregoing, it will be apparent to those skilled in the art from this disclosure that various changes and modifications can be made without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (4)
1. A drive protection device in carborundum MOSFET gate drive range restriction which characterized in that: the circuit comprises a main chip and a substrate, wherein the main chip and the substrate are respectively arranged on the same plane of a metal plate, and one side of the metal plate is provided with a grid electrode, a drain electrode, a source electrode and a metal electrode; the outer surface of the metal plate is provided with a packaging shell;
the main chip is provided with a first contact, a second contact and a third contact, the leading-out end of the first contact is a grid electrode, the leading-out end of the second contact is a drain electrode, the leading-out end of the third contact is a source electrode, and the first contact, the second contact and the third contact are arranged in different areas of the main chip;
the substrate is provided with a current-limiting resistor and a voltage-stabilizing tube, the second point position of the current-limiting resistor is electrically connected with the second point position of the voltage-stabilizing tube, the first point position of the current-limiting resistor is electrically connected with the grid electrode, and the first point position of the voltage-stabilizing tube is electrically connected with the source electrode; the second point position of the voltage-stabilizing tube is connected with the first contact on the main chip, and the third contact is electrically connected with the source electrode; the metal pole is electrically connected with the second contact.
2. A silicon carbide MOSFET gate drive amplitude limited inner drive protection device as claimed in claim 1 wherein: the base plate is one of porcelain base plate, polyethylene board or mica plate, the metal sheet is the copper.
3. A silicon carbide MOSFET gate drive amplitude limited inner drive protection device as claimed in claim 1 wherein: the current-limiting resistor is a resistor chip, and the voltage-stabilizing tube is a voltage-stabilizing tube chip.
4. A silicon carbide MOSFET gate drive amplitude limited inner drive protection device as claimed in claim 1 wherein: the voltage-stabilizing tube is a TVS tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023331328.1U CN214707517U (en) | 2020-12-31 | 2020-12-31 | Silicon carbide MOSFET gate drive amplitude limiting internal drive protection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023331328.1U CN214707517U (en) | 2020-12-31 | 2020-12-31 | Silicon carbide MOSFET gate drive amplitude limiting internal drive protection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214707517U true CN214707517U (en) | 2021-11-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023331328.1U Active CN214707517U (en) | 2020-12-31 | 2020-12-31 | Silicon carbide MOSFET gate drive amplitude limiting internal drive protection device |
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| Country | Link |
|---|---|
| CN (1) | CN214707517U (en) |
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- 2020-12-31 CN CN202023331328.1U patent/CN214707517U/en active Active
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