CN215600350U

CN215600350U - Integrated packaging structure of surface mount diode

Info

Publication number: CN215600350U
Application number: CN202121393500.8U
Authority: CN
Inventors: 周小强
Original assignee: Heyuan Chuangji Electronic Technology Co ltd
Current assignee: Heyuan Chuangji Electronic Technology Co ltd
Priority date: 2021-06-22
Filing date: 2021-06-22
Publication date: 2022-01-21
Anticipated expiration: 2031-06-22

Abstract

The utility model provides an integrated packaging structure of a surface mount diode, which comprises an insulating packaging body, wherein at least two diode units distributed at intervals are arranged in the insulating packaging body, and an insulating heat dissipation seat is also arranged in the insulating packaging body; the diode unit comprises a diode chip, two wiring vertical plates and two conductive pins, wherein a first welding layer is connected between an electrode on the side surface of the diode chip and the wiring vertical plates, and the two wiring vertical plates are respectively connected to the two conductive pins; conductive pin includes the crosspiece down, props up the piece, goes up the crosspiece and fixes a position the piece immediately, goes up the top that the crosspiece is on a parallel with the crosspiece down, goes up the crosspiece and is connected through propping up the piece immediately between the crosspiece down, and the piece is found in the location and is connected in the one end that the insulating heat dissipation seat was kept away from to last crosspiece, and the bottom of wiring riser is passed through the second welded layer and is connected on last crosspiece. The utility model can provide a plurality of unidirectional conductive circuits, has high integration level, can meet the use requirements of a plurality of unidirectional conductive circuits at the same time, and can avoid excessive heat accumulation.

Description

Integrated packaging structure of surface mount diode

Technical Field

The utility model relates to a diode, and particularly discloses an integrated packaging structure of a surface mount diode.

Background

The diode is an electronic device made of semiconductor materials, and the diode can form unidirectional conduction by utilizing the PN junction in the diode, namely when forward voltage is applied to the anode and the cathode of the diode, the diode is conducted, and when reverse voltage is applied, the diode is cut off. The patch type diode is a diode structure packaged in a patch form, and can effectively meet the requirements of current electronic products on light and thin design.

In the prior art, a diode chip is arranged inside a packaged patch diode, two electrodes of the diode chip are respectively connected with a pin to realize the conduction with an external circuit, the patch diode has a single function and can only form a one-way conductive circuit, a plurality of patch diodes are required to be installed in a circuit needing to apply a plurality of one-way conductive circuit elements to realize the corresponding function, the installation cost is high, the occupied space is large, and the overall structure is complex.

SUMMERY OF THE UTILITY MODEL

Therefore, it is necessary to provide an integrated package structure of a surface mount diode, which can provide multiple sets of unidirectional conductive circuits, and has high integration level and good heat dissipation performance.

In order to solve the problems of the prior art, the utility model discloses an integrated packaging structure of a surface mount diode, which comprises an insulating packaging body, wherein at least two diode units distributed at intervals are arranged in the insulating packaging body, and an insulating heat dissipation seat is also arranged in the insulating packaging body;

the diode unit comprises a diode chip, two wiring vertical plates and two conductive pins, wherein the two conductive pins are respectively positioned on two opposite sides of the insulating heat dissipation seat;

conductive pin includes the crosspiece down, props up the piece, goes up the crosspiece and fixes a position the piece immediately, goes up the top that the crosspiece is on a parallel with the crosspiece down, goes up the crosspiece and is connected through propping up the piece immediately between the crosspiece down, and the piece is found in the location and is connected in the one end that the insulating heat dissipation seat was kept away from to last crosspiece, and the bottom of wiring riser is passed through the second welded layer and is connected on last crosspiece.

Furthermore, the insulating heat dissipation seat is a ceramic seat.

Furthermore, the first welding layer and the second welding layer are both conductive silver glue layers.

Furthermore, the positioning vertical sheet is provided with a yielding groove.

Furthermore, the upper transverse sheet is fixedly provided with a limiting rib far away from the positioning vertical sheet, the limiting rib is positioned below the wiring vertical plate, and the second welding layer is positioned between the positioning vertical sheet and the limiting rib.

The utility model has the beneficial effects that: the utility model discloses an integrated packaging structure of a surface mount diode, which is provided with a plurality of diode units, can provide a plurality of unidirectional conducting circuits, has high integration level of the whole structure, can meet the use requirement of simultaneously needing the plurality of unidirectional conducting circuits, has wide application range, is provided with diode chips in a vertical mode, and can avoid the problem of excessive heat accumulation because the large-area surfaces of the diode chips face the left side and the right side.

Drawings

Fig. 1 is a schematic top view of the present invention.

FIG. 2 is a schematic cross-sectional view taken along line A-A' of FIG. 1.

FIG. 3 is a schematic cross-sectional view taken along line B-B' in FIG. 1.

Fig. 4 is a schematic view of a split structure of the diode unit of the present invention.

The reference signs are: the semiconductor package comprises an insulating package body 10, an insulating heat sink 11, a diode unit 20, a diode chip 21, a wiring vertical plate 22, a first welding layer 221, a conductive pin 30, a lower transverse plate 31, a support plate 32, an upper transverse plate 33, a second welding layer 331, a positioning vertical plate 34, a abdicating groove 341 and a limiting rib 35.

Detailed Description

For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.

Refer to fig. 1 to 4.

The embodiment of the utility model discloses an integrated packaging structure of a patch type diode, which comprises an insulating packaging body 10, wherein at least two diode units 20 distributed at intervals along a first direction are arranged in the insulating packaging body 10, namely at least two diode units 20 are arranged in the insulating packaging body 10, an interval is formed between every two adjacent diode units 20, and an insulating heat dissipation seat 11 extending along the first direction is also arranged in the insulating packaging body 10;

each diode cell 20 includes the following structure: the diode unit 20 comprises a diode chip 21, two wiring vertical plates 22 and two conductive pins 30, wherein the two conductive pins 30 are respectively located at two opposite sides of the insulating heat-dissipating seat 11, the diode chip 21 is vertically placed above the insulating heat-dissipating seat 11, the two wiring vertical plates 22 are respectively located at two opposite sides of the diode chip 21, a first welding layer 221 is connected between an electrode at the side surface of the diode chip 21 and the wiring vertical plates 22, and the two wiring vertical plates 22 are respectively connected to the two conductive pins 30;

each conductive pin 30 includes the following structure: the conductive pin 30 includes a lower cross piece 31, a support piece 32, an upper cross piece 33 and a positioning vertical piece 34, wherein at least one surface of the lower cross piece 31 protrudes out of the insulating package 10, preferably, the lower cross piece 31, the support piece 32, the upper cross piece 33 and the positioning vertical piece 34 are an integrated structure, preferably, the support piece 32 is tightly attached to one side of the insulating heat sink 11, the upper cross piece 33 is parallel to the upper side of the lower cross piece 31, the upper cross piece 33 is connected with the lower cross piece 31 through the support piece 32, the positioning vertical piece 34 is connected to one end of the upper cross piece 33 away from the insulating heat sink 11, the bottom of the connecting vertical plate 22 is connected to the upper cross piece 33 through a second welding layer 331, and the positioning vertical piece 34 is limited on one side of the connecting vertical plate 22 away from the diode chip 21.

According to the utility model, the plurality of diode units 20 are arranged in the same insulating packaging body 10, and the corresponding diode units 20 can be connected by connecting the corresponding conductive pins 30, so that the circuit structure of a plurality of diodes can be used, the integration level of the whole structure is high, the occupied space is small, and the structure is stable; the diode chip 21 is arranged in a vertical manner, the large-area surface of the diode chip faces the left side and the right side, the heat dissipation performance of the diode chip can be effectively improved, most of heat can be effectively prevented from accumulating at the bottom of the insulating packaging body 10, the working performance of the whole structure can be effectively ensured, the heat dissipation performance of the whole structure can be further improved by the insulating heat dissipation seat 11, two conductive pins 30 can be effectively isolated, and the problems of short circuit and the like can be avoided; in addition, the diode chip 21 is connected to the conductive pin 30 through the wiring vertical plate 22, and after the injection molding package, the stress formed in the insulating package 10 can be released to some extent by the connection structure between the wiring vertical plate 22 and the conductive pin 30, so that the reliability of the overall structure can be effectively improved, and the problems of tearing and the like can be avoided.

In the present embodiment, the insulating heat dissipation seat 11 is a ceramic seat, and the ceramic seat has good insulating performance and heat dissipation performance, and preferably, the ceramic seat is a quadrangular prism.

In this embodiment, the first welding layer 221 and the second welding layer 331 are both conductive silver glue layers, and the conductive silver glue has good conductive performance and adhesive property, so that the stability and reliability of the connection structure between the wiring vertical plate 22 and the electrode of the diode chip 21 can be effectively improved, and the stability and reliability of the connection structure between the wiring vertical plate 22 and the upper cross piece 33 can also be effectively improved.

In this embodiment, the positioning vertical piece 34 is provided with the receding groove 341, so that the effect of stress release can be effectively improved by the receding groove 341, and meanwhile, the firmness of the connection structure between the insulating package 10 and the conductive pin 30 can be effectively improved.

In this embodiment, be fixed with the spacing rib 35 of keeping away from the upright piece 34 of location on last horizontal piece 33, spacing rib 35 is located the below of wiring riser 22, and second welded layer 331 is located the location and founds between piece 34 and the spacing rib 35, can effectively restrict the position of second welded layer 331 through spacing rib 35 cooperation location riser, avoids second welded layer 331 to take place overflow scheduling problem when adding man-hour, can effectively improve inside conductive structure's reliability.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

1. An integrated packaging structure of a patch type diode is characterized by comprising an insulating packaging body (10), wherein at least two diode units (20) distributed at intervals are arranged in the insulating packaging body (10), and an insulating heat dissipation seat (11) is further arranged in the insulating packaging body (10);

the diode unit (20) comprises a diode chip (21), two wiring vertical plates (22) and two conductive pins (30), the two conductive pins (30) are respectively positioned at two opposite sides of the insulating heat radiating seat (11), the diode chip (21) is vertically placed above the insulating heat radiating seat (11), the two wiring vertical plates (22) are respectively positioned at two opposite sides of the diode chip (21), a first welding layer (221) is connected between an electrode at the side surface of the diode chip (21) and the wiring vertical plates (22), and the two wiring vertical plates (22) are respectively connected to the two conductive pins (30);

the conductive pins (30) comprise a lower transverse sheet (31), a supporting sheet (32), an upper transverse sheet (33) and a positioning vertical sheet (34), the upper transverse sheet (33) is parallel to the upper side of the lower transverse sheet (31), the upper transverse sheet (33) is connected with the lower transverse sheet (31) through the supporting sheet (32), the positioning vertical sheet (34) is connected to one end, far away from the insulating heat dissipation seat (11), of the upper transverse sheet (33), and the bottom of the wiring vertical plate (22) is connected to the upper transverse sheet (33) through a second welding layer (331).

2. The integrated package structure of the chip diode according to claim 1, wherein the insulating heat spreader (11) is a ceramic base.

3. The integrated package structure of the patch diode according to claim 1, wherein the first solder layer (221) and the second solder layer (331) are both conductive silver paste layers.

4. The integrated package structure of the patch diode according to claim 1, wherein the positioning vertical piece (34) is provided with a relief groove (341).

5. The integrated package structure of the patch diode according to claim 1, wherein a limiting rib (35) far away from the positioning vertical piece (34) is fixed on the upper transverse piece (33), the limiting rib (35) is located below the wiring vertical plate (22), and the second welding layer (331) is located between the positioning vertical piece (34) and the limiting rib (35).