CN212485342U - SMD diode with reliable structure - Google Patents
SMD diode with reliable structure Download PDFInfo
- Publication number
- CN212485342U CN212485342U CN202020940372.3U CN202020940372U CN212485342U CN 212485342 U CN212485342 U CN 212485342U CN 202020940372 U CN202020940372 U CN 202020940372U CN 212485342 U CN212485342 U CN 212485342U
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- CN
- China
- Prior art keywords
- conductive
- transverse plate
- insulating
- diode chip
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000003466 welding Methods 0.000 claims abstract description 29
- 238000005476 soldering Methods 0.000 claims abstract description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 claims abstract description 19
- 230000003014 reinforcing effect Effects 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 230000017525 heat dissipation Effects 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract description 11
- 238000001746 injection moulding Methods 0.000 abstract description 5
- 239000006185 dispersion Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model provides a SMD diode with reliable structure, which comprises an insulation packaging body, a diode chip is arranged in the insulation packaging body, a first conductive transverse plate and a second conductive transverse plate are arranged on two sides of the diode chip, an insulation heat-conducting block is arranged at the bottom of the second conductive transverse plate, and the bottom surface of the insulation packaging body is positioned above the bottom surface of the insulation heat-conducting block; a soldering tin abdicating hole is formed in the first conductive transverse plate, a limiting ring is fixed at the bottom of the first conductive transverse plate, a first conductive vertical plate is integrally formed at one end of the first conductive transverse plate, which is far away from the diode chip, and the bottom of the first conductive vertical plate is connected with a first welding sheet through a first conductive layer; one end of the second conductive transverse plate, which is far away from the diode chip, is integrally formed with a second conductive vertical plate, and the bottom of the second conductive vertical plate is connected with a second welding piece through a second conductive layer. The utility model discloses electrical connection structure is reliable, avoids taking place the short circuit, can consume the stress that forms among the injection moulding process, and holistic heat dispersion is good.
Description
Technical Field
The utility model relates to a diode specifically discloses a SMD diode of reliable structure.
Background
The diode is an electronic device made of semiconductor material and has one-way conductivity, i.e. when a forward voltage is applied to the anode and cathode of the diode, the diode is conducted, and when a reverse voltage is applied, the diode is cut off.
The patch type diode is a diode structure packaged in a patch form, and can effectively meet the requirements of current electronic products on light and thin design. In the prior art, the surface mount diode comprises an insulation packaging body, a diode chip and two conductive pins, wherein the two conductive pins are respectively welded on the upper side and the lower side of the diode chip, and once misoperation occurs in the production and manufacturing process, solder paste on the top of the diode chip easily overflows to a bottom electrode to cause short circuit.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide a patch diode with a reliable structure, which can effectively limit the position of solder paste on the top of the diode, and has a reliable electrical connection structure and good heat dissipation performance of the overall structure.
In order to solve the prior art problem, the utility model discloses a SMD diode with reliable structure, which comprises an insulation packaging body, a diode chip is arranged in the insulation packaging body, a first conductive transverse plate and a second conductive transverse plate are respectively arranged at the upper side and the lower side of the diode chip, an insulation heat-conducting block is arranged at the bottom of the second conductive transverse plate, and the bottom surface of the insulation packaging body is positioned above the bottom surface of the insulation heat-conducting block;
a first soldering tin block is connected between the first conductive transverse plate and the diode chip, a soldering tin abdicating hole is formed in the first conductive transverse plate, a limiting ring communicated with the soldering tin abdicating hole is fixed at the bottom of the first conductive transverse plate, the bottom surface of the limiting ring is tightly attached to the top surface of the diode chip, the first soldering tin block is positioned in the limiting ring, a first conductive vertical plate is integrally formed at one end, away from the diode chip, of the first conductive transverse plate, a first welding sheet is connected to the bottom of the first conductive vertical plate through a first conductive layer, and the bottom surface of the insulating heat-conducting block is coplanar with the bottom surface of the first welding sheet;
the second soldering tin block is connected between the second conductive transverse plate and the diode chip, a second conductive vertical plate is integrally formed at one end, away from the diode chip, of the second conductive transverse plate, the bottom of the second conductive vertical plate is connected with a second welding piece through a second conductive layer, and the bottom surface of the insulating heat conduction block is coplanar with the bottom surface of the second welding piece.
Furthermore, the insulating heat-conducting block is an insulating ceramic block or a heat-conducting silica gel block.
Furthermore, the bottom of the insulating heat-conducting block is provided with a plurality of radiating grooves.
Furthermore, the limiting ring is a conductive silver rubber ring.
Furthermore, the first conducting layer and the second conducting layer are both conducting silver glue layers or tin paste layers.
Furthermore, a first reinforcing plate is integrally formed on the first welding piece, a second reinforcing plate is integrally formed on the second welding piece, and the first reinforcing plate and the second reinforcing plate are both located in the insulating packaging body.
The utility model has the advantages that: the utility model discloses a SMD diode of reliable structure, be provided with special spacing ring structure, can effectively restrict the position of diode top tin cream, electrical connection structure is reliable, effectively avoid taking place the short circuit, and the soldering tin that the spacing ring top is connected step down the hole and can make things convenient for going on of welding process, connect through the conducting layer between welding piece and the conductive riser, can effectively consume the stress that the injection moulding in-process formed, thereby improve overall structure's fastness, welding piece protrusion in the bottom surface of insulating packaging body, can facilitate the welding use, overall structure's heat dispersion is good.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
The reference signs are: the diode package comprises an insulating package body 10, an insulating heat conduction block 11, a heat dissipation groove 111, a diode chip 20, a first solder block 21, a second solder block 22, a first conductive transverse plate 30, a soldering abdication hole 301, a limiting ring 302, a first conductive vertical plate 31, a first soldering lug 32, a first conductive layer 321, a second reinforcing plate 322, a second conductive transverse plate 40, a second conductive vertical plate 41, a second soldering lug 42, a second conductive layer 421 and a second reinforcing plate 422.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
Refer to fig. 1.
The embodiment of the utility model discloses SMD diode of reliable structure, including insulating packaging body 10, be equipped with diode chip 20 in insulating packaging body 10, the upper and lower both sides of diode chip 20 are equipped with first electrically conductive diaphragm 30 and second electrically conductive diaphragm 40 respectively, and first electrically conductive diaphragm 30 and second electrically conductive diaphragm 40 all are located insulating packaging body 10, and the bottom of second electrically conductive diaphragm 40 is equipped with insulating heat conduction piece 11, and the bottom surface of insulating packaging body 10 is located the top of insulating heat conduction piece 11 bottom surface;
the first conductive transverse plate 30 and the top electrode of the diode chip 20 are connected with a first soldering tin block 21, the first conductive transverse plate 30 is provided with a soldering tin abdicating hole 301, the bottom of the first conductive transverse plate 30 is fixed with a spacing ring 302 communicated with the soldering tin abdicating hole 301, the bottom surface of the spacing ring 302 is tightly attached to the top surface of the diode chip 20, the first soldering tin block 21 is positioned in the spacing ring 302, during soldering, the spacing ring 302 presses the top surface of the diode chip 20, solder paste enters the spacing ring 302 through the soldering tin abdicating hole 301, the solder paste is solidified in the spacing ring 302 to form the first soldering tin block 21, the soldering operation is convenient, the spacing ring 302 can effectively limit the position of the solder paste, the solder paste is prevented from overflowing to the bottom electrode of the diode chip 20 to cause short circuit, the circuit structure is reliable, a first conductive vertical plate 31 is integrally formed at one end of the first conductive transverse plate 30 far away from the diode chip 20, the bottom of the first conductive vertical plate 31 is connected with a first soldering, the bottom surface of the insulating heat-conducting block 11 is coplanar with the bottom surface of the first welding sheet 32;
a second soldering tin block 22 is connected between the second conductive transverse plate 40 and the bottom electrode of the diode chip 20, a second conductive vertical plate 41 is integrally formed at one end of the second conductive transverse plate 40, which is far away from the diode chip 20, the bottom of the second conductive vertical plate 41 is connected with a second welding sheet 42 through a second conductive layer 421, and the bottom surface of the insulating heat conduction block 11 is coplanar with the bottom surface of the second welding sheet 42.
The bottom surfaces of the two welding sheets are both positioned below the bottom surface of the insulating packaging body 10, namely the insulating packaging body 10 is erected, and the insulating heat conducting block 11 effectively separates the two welding sheets, so that when the diode is applied to a PCB (printed Circuit Board) for welding, tin pastes on the two bonding pads can be effectively prevented from being adhered, the welding structure is ensured to be reliable and effective, in addition, the internal electrical connection structure of the diode is reliable and stable, and the heat dissipation performance of the whole structure is good; after the structural connection inside the diode is completed, when injection molding is performed, the first conductive layer 321 and the second conductive layer 421 can effectively release stress formed in the injection molding process, so that the insulating packaging body 10 is prevented from cracking, and the stability of the whole structure can be effectively ensured.
In this embodiment, the insulating heat conducting block 11 is an insulating ceramic block or a heat conducting silica gel block, and both the insulating ceramic and the heat conducting silica gel have good heat dissipation performance and insulating performance, so that the heat dissipation performance of the overall diode structure can be effectively improved.
Based on the above embodiment, the bottom of the insulating and heat conducting block 11 is provided with the plurality of heat dissipation grooves 111, and the heat dissipation performance of the diode can be further improved through the heat dissipation grooves 111, so that the service life of the diode is prolonged.
In this embodiment, the limiting ring 302 is a conductive silver adhesive ring, the conductive silver adhesive has good elasticity and conductivity, and after being fixed on the bottom surface of the first conductive transverse plate 30, the conductive silver adhesive ring is pressed on the upper surface of the diode chip 20 during welding installation, so that the sealing effect is good, leakage of solder paste can be effectively avoided during welding, and the electrical connection performance between the first conductive transverse plate 30 and the top electrode of the diode chip 20 can be effectively improved.
In this embodiment, the first conductive layer 321 and the second conductive layer 421 are both conductive silver glue layers or solder paste layers, so as to ensure that the first conductive layer 321 and the second conductive layer 421 have certain deformation capability, thereby effectively improving the stress reduction effect during injection molding.
In this embodiment, the first reinforcing plate 322 is integrally formed on the first welding tab 32, the second reinforcing plate 422 is integrally formed on the second welding tab 42, and both the first reinforcing plate 322 and the second reinforcing plate 422 are located in the insulating package 10, so that the stability of the connection structure between the first welding tab 32 and the insulating package 10 and the connection structure between the second welding tab 42 and the insulating package 10 can be effectively improved through the first reinforcing plate 322 and the second reinforcing plate 422.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (6)
1. A patch type diode with a reliable structure is characterized by comprising an insulating packaging body (10), wherein a diode chip (20) is arranged in the insulating packaging body (10), a first conductive transverse plate (30) and a second conductive transverse plate (40) are respectively arranged on the upper side and the lower side of the diode chip (20), an insulating heat-conducting block (11) is arranged at the bottom of the second conductive transverse plate (40), and the bottom surface of the insulating packaging body (10) is positioned above the bottom surface of the insulating heat-conducting block (11);
a first soldering tin block (21) is connected between the first conductive transverse plate (30) and the diode chip (20), a soldering tin abdicating hole (301) is formed in the first conductive transverse plate (30), a limiting ring (302) communicated with the soldering tin abdicating hole (301) is fixed at the bottom of the first conductive transverse plate (30), the bottom surface of the limiting ring (302) is tightly attached to the top surface of the diode chip (20), the first soldering tin block (21) is located in the limiting ring (302), a first conductive vertical plate (31) is integrally formed at one end, away from the diode chip (20), of the first conductive transverse plate (30), a first welding sheet (32) is connected to the bottom of the first conductive vertical plate (31) through a first conductive layer (321), and the bottom surface of the insulating heat-conducting block (11) is coplanar with the bottom surface of the first welding sheet (32);
a second soldering tin block (22) is connected between the second conductive transverse plate (40) and the diode chip (20), a second conductive vertical plate (41) is integrally formed at one end, far away from the diode chip (20), of the second conductive transverse plate (40), a second welding sheet (42) is connected to the bottom of the second conductive vertical plate (41) through a second conductive layer (421), and the bottom surface of the insulating heat-conducting block (11) is coplanar with the bottom surface of the second welding sheet (42).
2. The structurally sound surface-mounted diode according to claim 1, wherein the insulating and heat conducting block (11) is an insulating ceramic block or a heat conducting silica gel block.
3. The SMD diode according to claim 2, wherein said insulating heat-conducting block (11) has a plurality of heat dissipation grooves (111) at its bottom.
4. The structurally sound surface mount diode according to claim 1, wherein the limiting ring (302) is a conductive silver adhesive ring.
5. The structurally sound surface mount diode according to claim 1, wherein the first conductive layer (321) and the second conductive layer (421) are both conductive silver paste layers or solder paste layers.
6. A structurally sound, chip diode according to claim 1, wherein said first bonding pad (32) has a first reinforcing plate (322) integrally formed thereon, said second bonding pad (42) has a second reinforcing plate (422) integrally formed thereon, and said first reinforcing plate (322) and said second reinforcing plate (422) are both located in said insulating package (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020940372.3U CN212485342U (en) | 2020-05-28 | 2020-05-28 | SMD diode with reliable structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020940372.3U CN212485342U (en) | 2020-05-28 | 2020-05-28 | SMD diode with reliable structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212485342U true CN212485342U (en) | 2021-02-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020940372.3U Expired - Fee Related CN212485342U (en) | 2020-05-28 | 2020-05-28 | SMD diode with reliable structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212485342U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257797A (en) * | 2021-06-25 | 2021-08-13 | 瑞能半导体科技股份有限公司 | Common anode diode device and preparation method thereof |
-
2020
- 2020-05-28 CN CN202020940372.3U patent/CN212485342U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257797A (en) * | 2021-06-25 | 2021-08-13 | 瑞能半导体科技股份有限公司 | Common anode diode device and preparation method thereof |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 517300 No. 10-4, Shenzhen Bao'an (Longchuan) industrial transfer industrial park, Dengyun Town, Longchuan County, Heyuan City, Guangdong Province Patentee after: HEYUAN CHUANGJI ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: No. 10-4, Shenzhen Nanshan (Longchuan) industrial transfer park, Heyuan City, Guangdong Province, 517300 Patentee before: HEYUAN CHUANGJI ELECTRONIC TECHNOLOGY Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210205 |