CN111682018A - LED display module, display screen unit board, display screen and preparation method - Google Patents

LED display module, display screen unit board, display screen and preparation method Download PDF

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Publication number
CN111682018A
CN111682018A CN202010586736.7A CN202010586736A CN111682018A CN 111682018 A CN111682018 A CN 111682018A CN 202010586736 A CN202010586736 A CN 202010586736A CN 111682018 A CN111682018 A CN 111682018A
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CN
China
Prior art keywords
chip
bonding pad
led display
cathode
display module
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Pending
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CN202010586736.7A
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Chinese (zh)
Inventor
周永寿
刘天生
颉信忠
连军红
孙彦龙
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Guangdong Shaohua Technology Co ltd
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Tianshui Huatian Technology Co Ltd
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Application filed by Tianshui Huatian Technology Co Ltd filed Critical Tianshui Huatian Technology Co Ltd
Priority to CN202010586736.7A priority Critical patent/CN111682018A/en
Publication of CN111682018A publication Critical patent/CN111682018A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Device Packages (AREA)

Abstract

The invention belongs to the technical field of LED display, and discloses an LED display module which comprises a lead frame, an R chip, a G chip, a B chip and a dam structure, wherein a radiating fin is used as a carrier of an RGB chip, the lead frame is preprocessed to be a hollow structure, a solid part comprises the radiating fin and a bonding pad, the front surface of the radiating fin bears a group of RGB chips, heat emitted when the RGB chips are conducted can be directly radiated out of the LED display module through the back surface of the radiating fin, the heat radiation efficiency of a product is effectively improved, and the problem of high-temperature failure of an LED product is solved; the box dam structure realizes the functions of optical isolation and optical reflection of adjacent pixels, prevents light crosstalk and improves luminous intensity; the RGB chip is directly fixed on the lead frame without a substrate, the structure is simple, and the lightness and thinness are realized. The invention also discloses a display screen unit plate and a display screen with the LED display module.

Description

LED display module, display screen unit board, display screen and preparation method
Technical Field
The invention belongs to the technical field of LED display, and relates to an LED display module, a display screen unit plate, a display screen and a preparation method.
Background
With the breakthrough of the LED display technology and the maturity of products, the requirements of good heat dissipation, high reliability, lightness and thinness are provided for the LED display devices forming the pixels of the LED display device.
At present, a substrate or a foot-covering bracket formed by stamping a die is adopted as a chip carrier of most LED display modules, the heat dissipation of an LED and the improvement of the reliability of a product are limited due to the self heat conductivity, the mismatch of thermal expansion and the design limitation of a heat dissipation structure of a packaging material, and meanwhile, a packaging body is thick and cannot be thinned.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide an LED display module, a display screen unit plate with the LED display module and a display screen with the LED display module, and the LED display module and the display screen unit plate solve the problems that the existing LED display module is poor in heat dissipation and cannot be thinned.
The invention is realized by the following technical scheme:
an LED display module comprises a lead frame, an R chip, a G chip, a B chip and a dam structure, wherein the lead frame comprises a solid part and a hollow part, the solid part comprises a radiating fin and a bonding pad, the bonding pad is positioned around the radiating fin, and the back surfaces of the radiating fin and the bonding pad are provided with welding feet; the bonding pad is positioned around the radiating fin;
arranging a dam structure on the front surfaces of the radiating fins and the bonding pads, and fixing an R chip, a G chip and a B chip on the front surface of the radiating fin part in the dam structure;
and plastic packaging materials for packaging the R chip, the G chip and the B chip are filled in the dam structure.
Further, the bonding pad comprises an R chip cathode bonding pad, a G chip cathode bonding pad, a B chip cathode bonding pad and an RGB chip common anode bonding pad; the R chip cathode bonding pad and the radiating fin are of an integral structure.
Furthermore, the anodes of the R chip, the G chip and the B chip are connected with the RGB chip common anode bonding pad through bonding wires, the cathode of the R chip is fixed on the R chip cathode bonding pad through conductive adhesive, the cathode of the G chip is connected with the G chip cathode bonding pad through the bonding wires, and the cathode of the B chip is connected with the B chip cathode bonding pad through the bonding wires.
Furthermore, the lead frame is made of copper strips and is manufactured by adopting an etching process.
Further, the solder tail is electrically connected to an external element.
Furthermore, the number of the radiating fins is 4, and the number of the welding feet is 14.
Furthermore, a groove is pre-formed in the outer edge surface corresponding to the back surface of the solid part to form a step surface.
Further, the LED display module comprises four pixel units.
The invention also discloses a display screen unit board with the LED display modules, wherein the display screen unit board is formed by sticking a plurality of LED display modules on a PCB.
The invention also discloses an LED display screen with the display screen unit plate, and the display screen is formed by splicing a plurality of display screen unit plates.
The invention also discloses a preparation method of the LED display module, which comprises the following steps:
s1, forming a radiating fin, an RGB chip common anode bonding pad, a G chip cathode bonding pad and a G chip cathode bonding pad on the front surface of the lead frame through an etching process;
s2, forming a welding leg on the back by etching;
s3, forming a dam structure at the front pixel unit of the lead frame through a plastic package process, and fixing an R chip, a G chip and a B chip on the front surface of a radiating fin in the dam structure;
s4, connecting the anodes of the R chip, the G chip and the B chip with the RGB chip common anode bonding pad, fixing the cathode of the R chip on the R chip cathode bonding pad, connecting the cathode of the G chip with the G chip cathode bonding pad, and connecting the cathode of the B chip with the B chip cathode bonding pad;
s5, filling a box dam structure, and packaging the R chip, the G chip and the B chip in the box dam structure;
and S6, separating through a cutting process to form a plurality of LED display modules.
Compared with the prior art, the invention has the following beneficial technical effects:
the invention discloses an LED display module, which comprises a lead frame, an R chip, a G chip, a B chip and a dam structure, wherein a radiating fin is used as a carrier of an RGB chip, the lead frame is preprocessed to be a hollow structure, a solid part comprises the radiating fin and a bonding pad, the front surface of the radiating fin bears a group of RGB chips, and due to the hollow structure of the lead frame and the fact that the lead frame is light and thin, heat can be timely radiated, the heat generated when the RGB chips are conducted can be directly radiated out of the LED display module through the back surface of the radiating fin, the heat radiation efficiency of a product is effectively improved, and the problem of high-temperature failure of an LED product is solved; the box dam structure realizes the effect of adjacent pixel optoisolation and light reflection, prevents the crosstalk and promotes luminous intensity. The invention has no substrate, only fixes the RGB chip on the lead frame directly, has simple structure and realizes lightness and thinness.
Furthermore, the lead frame adopts a copper strip, so that the thickness of the product is effectively reduced, and the lightness and thinness are realized.
Furthermore, a groove is pre-formed in the outer edge surface corresponding to the back surface of the solid part to form a step surface, the step surface enables the plastic package material to be connected with the lead frame in a hanging mode, and the semi-etching area can be encapsulated in the plastic package material after being packaged, so that the lead frame is prevented from being separated from the plastic package material.
The invention also discloses a display screen unit plate and a display screen with the LED display module, which have better heat dissipation performance and lighter overall structure weight.
The invention also discloses a preparation method of the LED display module, firstly, a lead frame capable of fixing the RGB chip is processed by an etching process, so that the lightness, thinness and high-efficiency heat dissipation are realized; then, filling the dam structure after core feeding and press welding, wherein the filling material is epoxy resin, silicon resin and other materials with good light transmittance, and effectively transmits the light of the RGB chip to the outside of the product to form pixel points. The plastic package molding box dam structure is added, and the optical isolation and light reflection effects of adjacent pixels are achieved through the box dam structure, so that light crosstalk is prevented, and the luminous intensity is improved.
Drawings
FIG. 1 is a schematic structural diagram of an LED display module according to the present invention;
FIG. 2 is a front view of a lead frame;
FIG. 3 is a schematic diagram of a reverse structure of a lead frame;
FIG. 4 is a cross-sectional view A-A of FIG. 3;
FIG. 5 is a schematic view of a reverse fillet arrangement of the lead frame;
fig. 6 is a schematic view of the entire structure of the lead frame before the division.
Wherein, 1 is a lead frame; 2 is an R chip; 3 is a G chip; 4 is a chip B; 5 is a box dam structure; 6 is a bonding wire; 7 is a heat sink; 8 is a welding leg; 9 is the cathode bonding pad of the B chip; 10 is the chip cathode bonding pad G; 11 is a common anode bonding pad of the RGB chip; 12 is the R chip cathode pad; and 13 is a step surface.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
as shown in fig. 1, the invention discloses an LED display module, which comprises a lead frame 1, an R chip 2, a G chip 3, a B chip 4 and a dam structure 5, wherein the lead frame 1 comprises a solid part and a hollow part, the solid part comprises a heat sink 7 and a bonding pad, and the back surfaces of the heat sink 7 and the bonding pad are provided with solder tails 8; the pad is positioned around the heat sink 7; a dam structure 5 is arranged on the front surfaces of the heat sink 7 and the bonding pad, and the R chip 2, the G chip 3 and the B chip 4 are fixed on the front surface of the heat sink 7 part positioned in the dam structure 5.
As shown in fig. 2, the bonding pads include an R chip cathode bonding pad 12, a G chip cathode bonding pad 10, a B chip cathode bonding pad 9, and an RGB chip common anode bonding pad 11, and the RGB chip common anode bonding pad 11, the G chip cathode bonding pad 10, and the B chip cathode bonding pad 9 are located around the heat sink 7.
The R chip cathode pad 12 and the heat sink 7 are integrated, and a part of the region of the heat sink 7 extending from the R chip cathode pad 12 is used as the R chip cathode pad. The cathode of the R chip 2 is fixedly connected with the R chip cathode bonding pad 12 through conductive adhesive.
As shown in fig. 1, the anodes of the R chip 2, the G chip 3 and the B chip 4 are connected to the RGB chip common anode pad 11 through bonding wires 6, and the cathodes of the G chip 3 and the B chip 4 are connected to the corresponding chip cathode pads through bonding wires 6.
As shown in fig. 1, the solid portion is divided into four pixel units, forming 4 full-color pixels, and arranged in an XY-direction array. Specifically, each pixel unit includes one heat sink 7 and a set of RGB chips 4, and 2 pixel units in the X direction share 1 common anode pad.
A dam structure 5 is arranged at each pixel unit, and the R chip 2, the G chip 3 and the B chip 4 are fixed on the front surface of a radiating fin 7 part positioned in the dam structure 5; the R chip 2, the G chip 3 and the B chip 4 are connected with the RGB chip common anode bonding pad 11, the G chip 3 is connected with the G chip cathode bonding pad 10, and the B chip 4 is connected with the B chip cathode bonding pad 9.
And the dam structure 5 is filled with a plastic packaging material for packaging the R chip 2, the G chip 3 and the B chip 4. The dam structure 5 is formed by injection molding of a plastic package material on the lead frame 1 through a plastic package process, so that the effects of optical isolation and light reflection of adjacent pixels are realized, light crosstalk is prevented, and the luminous intensity is improved.
The plastic package material is made of materials with good light transmission such as epoxy resin and silicon resin, and effectively transmits light of the RGB chip to the outside of the product to form pixel points.
The lead frame 1 is made of a single-layer metal material, a hollow structure is formed through processes such as etching and the like, the internal circuit connection function of the display module is achieved, and a copper strip is generally adopted.
The lead frame 1 is made of a single-layer metal material, a hollow structure is formed through processes such as etching and the like, the internal circuit connection function of the display module is achieved, and a copper strip is generally adopted.
The back of the solid portion serves as an SMT pad 8, and the SMT pad 8 is electrically connected to an external component.
The LED display module comprises 4 full-color pixel points which are arranged in an XY direction array.
As shown in fig. 5, the number of the heat sinks 7 is 4, the number of the solder fillets 8 is 14, and the solder fillets 8 are circular portions corresponding to gray areas in the drawing.
As shown in fig. 4, the solid portion is pre-grooved on the corresponding outer edge surface of the back surface to form a step surface 13 as a half-etched region, i.e., a gray region as shown in fig. 3, i.e., the cross-sectional area of the back surface is smaller than that of the front surface. The step surface 13 enables the plastic package material to be hung with the lead frame 1, and the semi-etching area can be encapsulated in the plastic package material after being encapsulated, so that the lead frame 1 is prevented from being separated from the plastic package material.
The invention discloses a preparation method of an LED display module, which specifically comprises the following steps:
s1, forming the lead frame 1 shown in FIG. 6 by etching process, and forming a heat sink 7, an RGB chip common anode bonding pad 11, a G chip cathode bonding pad 10 and a G chip cathode bonding pad 10 on the front surface;
s2, forming solder fillets 8 on the back surface by etching;
s3, injecting a plastic package material at the pixel unit on the front surface of the lead frame 1 through a mold to form a dam structure 5, and fixing the R chip 2, the G chip 3 and the B chip 4 on the front surface of a radiating fin 7 in the dam structure 5 through die bonding glue;
s4, connecting the R chip 2, the G chip 3 and the B chip 4 with the RGB chip common anode bonding pad 11 and the corresponding chip cathode bonding pad through the bonding wires 6;
s5, filling liquid glue into the box dam structure 5 through a glue dispensing process, and ensuring that the R chip 2, the G chip 3, the B chip 4 and the bonding wire 6 are packaged in the box dam structure 5;
and S6, separating through a cutting process to form a plurality of LED display modules as shown in figure 1.

Claims (10)

1. The LED display module is characterized by comprising a lead frame (1), an R chip (2), a G chip (3), a B chip (4) and a dam structure (5), wherein the lead frame (1) comprises a solid part and a hollow part, the solid part comprises a radiating fin (7) and a bonding pad, the bonding pad is positioned around the radiating fin (7), and the back surfaces of the radiating fin (7) and the bonding pad are provided with welding feet (8); the pad is positioned around the heat sink (7);
the bonding pads comprise an R chip cathode bonding pad (12), a G chip cathode bonding pad (10), a B chip cathode bonding pad (9) and an RGB chip common anode bonding pad (11); the R chip cathode bonding pad (12) and the radiating fin (7) are of an integral structure;
arranging a dam structure (5) on the front surfaces of the radiating fins (7) and the bonding pads, and fixing an R chip (2), a G chip (3) and a B chip (4) on the front surface of the radiating fin (7) positioned in the dam structure (5);
and plastic packaging materials for packaging the R chip (2), the G chip (3) and the B chip (4) are filled in the dam structure (5).
2. The LED display module according to claim 1, wherein the anodes of the R chip (2), the G chip (3) and the B chip (4) are connected with the RGB chip common anode bonding pad (11) through the bonding wire (6), the cathode of the R chip (2) is fixed on the R chip cathode bonding pad (12) through a conductive adhesive, the cathode of the G chip (3) is connected with the G chip cathode bonding pad (10) through the bonding wire (6), and the cathode of the B chip (4) is connected with the B chip cathode bonding pad (9) through the bonding wire (6).
3. The LED display module according to claim 1, wherein the lead frame (1) is made of copper tape by etching process.
4. The LED display module of claim 1, wherein the solder tails (8) are electrically connected to external components.
5. The LED display module of claim 1, wherein there are 4 heat sinks (7) and 14 solder feet (8).
6. The LED display module according to claim 1, wherein the solid portion is pre-grooved with a step surface (13) on the outer edge surface corresponding to the back surface.
7. The LED display module of claim 1, wherein the LED display module comprises four pixel cells.
8. The display screen unit board with the LED display module of any one of claims 1 to 7, wherein the display screen unit board is formed by attaching a plurality of LED display modules on a PCB board.
9. An LED display panel having the panel of claim 8, wherein the panel is formed by splicing a plurality of panels.
10. The method for preparing the LED display module according to any one of claims 1 to 7, comprising the following steps:
s1, forming a radiating fin (7), an RGB chip common anode bonding pad (11), a G chip cathode bonding pad (10) and a G chip cathode bonding pad (10) on the front surface of the lead frame (1) through an etching process;
s2, forming a welding foot (8) on the back surface by etching;
s3, forming a dam structure (5) at the front pixel unit of the lead frame (1) through a plastic package process, and fixing an R chip (2), a G chip (3) and a B chip (4) on the front of a radiating fin (7) in the dam structure (5);
s4, connecting the anodes of the R chip (2), the G chip (3) and the B chip (4) with the RGB chip common anode bonding pad (11), fixing the cathode of the R chip (2) on the R chip cathode bonding pad (12), connecting the cathode of the G chip (3) with the G chip cathode bonding pad (10), and connecting the cathode of the B chip (4) with the B chip cathode bonding pad (9);
s5, filling a box dam structure (5), and packaging the R chip (2), the G chip (3) and the B chip (4) in the box dam structure (5);
and S6, separating through a cutting process to form a plurality of LED display modules.
CN202010586736.7A 2020-06-24 2020-06-24 LED display module, display screen unit board, display screen and preparation method Pending CN111682018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010586736.7A CN111682018A (en) 2020-06-24 2020-06-24 LED display module, display screen unit board, display screen and preparation method

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Application Number Priority Date Filing Date Title
CN202010586736.7A CN111682018A (en) 2020-06-24 2020-06-24 LED display module, display screen unit board, display screen and preparation method

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CN111682018A true CN111682018A (en) 2020-09-18

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114975701A (en) * 2022-08-02 2022-08-30 江西兆驰半导体有限公司 Packaging method of LED chip
CN115911022A (en) * 2023-02-15 2023-04-04 江西兆驰半导体有限公司 Manufacturing method of fan-out type packaged LED device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114975701A (en) * 2022-08-02 2022-08-30 江西兆驰半导体有限公司 Packaging method of LED chip
CN115911022A (en) * 2023-02-15 2023-04-04 江西兆驰半导体有限公司 Manufacturing method of fan-out type packaged LED device

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