CN214152910U - 一种集成esd结构的高压平面vdmos器件 - Google Patents
一种集成esd结构的高压平面vdmos器件 Download PDFInfo
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- CN214152910U CN214152910U CN202120317666.5U CN202120317666U CN214152910U CN 214152910 U CN214152910 U CN 214152910U CN 202120317666 U CN202120317666 U CN 202120317666U CN 214152910 U CN214152910 U CN 214152910U
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 48
- 230000007704 transition Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229920005591 polysilicon Polymers 0.000 claims description 50
- 230000000670 limiting effect Effects 0.000 claims description 17
- 230000036961 partial effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Effective date of registration: 20240311 Address after: No. 1 Jinggangshan Road, suxitong science and Technology Industrial Park, Chongchuan District, Nantong City, Jiangsu Province, 226000 Patentee after: Jiejie Microelectronics (Nantong) Technology Co.,Ltd. Country or region after: China Address before: 214000 b-221, China Sensor Network International Innovation Park, 200 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Jiejie Microelectronics (Wuxi) Technology Co.,Ltd. Country or region before: China |