CN213026104U - Transistor heat radiation structure - Google Patents
Transistor heat radiation structure Download PDFInfo
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- CN213026104U CN213026104U CN202021753703.9U CN202021753703U CN213026104U CN 213026104 U CN213026104 U CN 213026104U CN 202021753703 U CN202021753703 U CN 202021753703U CN 213026104 U CN213026104 U CN 213026104U
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- transistor
- heat dissipation
- cooling plate
- transition cooling
- dissipation structure
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Abstract
The utility model relates to a transistor heat radiation structure for the transistor heat dissipation, transistor heat radiation structure includes heat dissipation base plate, transition cooling plate, transistor and elasticity preforming. The transition cooling plate is detachably arranged on the heat dissipation substrate and is vertical to the heat dissipation substrate, and a plurality of elastic pressing sheets are detachably arranged on the transition cooling plate; the plurality of transistors are tightly attached to the transition cooling plate through the elastic pressing sheets, so that the space occupation of the transistor heat dissipation structure can be further reduced, the space utilization rate of the transistor heat dissipation structure is effectively improved, and the power density is further improved. In addition, transition cooling plate, elasticity preforming and transistor among the transistor heat radiation structure form a structure wholly for transistor heat radiation structure can the modularization installation, has reduced the installation difficulty of transistor, more makes the transistor be convenient for through automatic technology installation. In addition, the transistor is tightly attached to the transitional cooling plate through the elastic pressing sheet, and damage to the transistor can be reduced.
Description
Technical Field
The utility model relates to the field of automotive technology, in particular to transistor heat radiation structure.
Background
At present, the promotion and development of electric new energy automobiles are promoted to national strategies in China, and the main reasons comprise that: first, the objective requirements for the traditional energy shortage crisis and environmental protection; secondly, the traditional automobile industry in China starts late and is in a relatively lagged state for a long time; thirdly, the accumulation of the battery, the motor and the electric control field in China in the early stage enables China to have certain advantages in the aspect of developing electric automobiles.
The new energy electric vehicle replaces a power assembly of a transmission automobile by a power system consisting of a power supply system and a motor, wherein the power system consists of a vehicle charger, a voltage conversion device, a battery, a transistor and the like. A voltage conversion device (such as DC/DC) and an On Board Charger (OBC) are one of two core components of a new energy electric vehicle. Transistors (e.g., metal-oxide-semiconductor field effect transistors, MOSFETs) are widely used as power components in voltage conversion devices, in vehicle chargers, and/or in other components.
During operation, the internal circuit of the transistor is frequently turned on and off, and therefore, a large amount of heat is generated, which further causes the transistor to be burned. It is therefore necessary to dissipate heat from the transistor. For the heat dissipation of the transistor, the transistor is usually bonded on the heat dissipation substrate for heat dissipation at present, and the transistor and the heat dissipation substrate are mounted horizontally and vertically at present, however, the conventional heat dissipation structure often has the problems of difficult mounting and the like for damaging the transistor and the transistor, so that a new transistor heat dissipation structure is necessary to be provided.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a transistor heat radiation structure can improve transistor heat radiation structure's space utilization to can solve among the prior art problem that the transistor damaged easily and the installation difficulty of transistor.
In order to achieve the above object, the utility model provides a transistor heat radiation structure for the transistor heat dissipation, transistor heat radiation structure includes:
a heat-dissipating substrate;
the transition cooling plate is detachably arranged on the heat dissipation substrate and is vertical to the heat dissipation substrate, and a plurality of elastic pressing sheets are detachably mounted on the transition cooling plate; and the transistors are tightly attached to the transitional cooling plate through the elastic pressing sheets.
Optionally, a surface of the transitional cooling plate, which is in close contact with the transistor, is a mounting surface, the transitional cooling plate further includes two opposite edge surfaces, which are a first edge surface and a second edge surface respectively, the edge surfaces intersect with the mounting surface, and the first edge surface is in close contact with the heat dissipation substrate.
Optionally, a heat conducting adhesive is disposed between the first edge surface and the heat dissipation substrate.
Optionally, a circuit board is disposed on the second edge surface of the transition cooling plate, and the circuit board is tightly attached to the second edge surface.
Optionally, the transistor includes a pin, the circuit board is provided with a plurality of insertion holes, and the pin is inserted into the insertion hole to connect the transistor and the circuit board.
Optionally, when the pins are inserted into the insertion holes, the pins are linear and perpendicular to the circuit board.
Optionally, the transition cooling plate further includes two opposite side surfaces, namely a first side surface and a second side surface, the side surfaces, the edge surfaces and the mounting surface are all intersected, a connecting portion is disposed at a position of the side surface close to the first edge surface, and the transition cooling plate is connected with the heat dissipation substrate through the connecting portion.
Optionally, the side surface, the edge surface and the mounting surface are perpendicular to each other.
Optionally, the elastic pressing sheet is detachably connected with the transition cooling plate.
Optionally, a heat conducting insulating gasket is disposed between the transistor and the transition cooling plate.
The utility model provides an among the transistor heat radiation structure, transistor heat radiation structure includes heat dissipation base plate, transition cooling plate, transistor and elasticity preforming. The transition cooling plate is detachably arranged on the heat dissipation substrate and is vertical to the heat dissipation substrate, and a plurality of elastic pressing sheets are detachably mounted on the transition cooling plate; the plurality of transistors are tightly attached to the transition cooling plate through the elastic pressing sheets, so that the space occupation of the transistor heat dissipation structure can be further reduced, the space utilization rate of the transistor heat dissipation structure is effectively improved, and the power density is further improved.
In addition, transition cooling plate, elasticity preforming and transistor among the transistor heat radiation structure form a structure wholly for transistor heat radiation structure can the modularization installation, has reduced the installation difficulty of transistor, more makes the transistor be convenient for through automatic technology installation.
In addition, the transistor is tightly attached to the transitional cooling plate through the elastic pressing sheet, and damage to the transistor can be reduced.
Drawings
Fig. 1 is a heat dissipation structure diagram of a transistor according to an embodiment of the present invention;
fig. 2 to 6 are conventional heat dissipation structure diagrams of transistors.
11-a heat dissipation substrate; 12-a transistor; 13-a transition cooling plate; 14-a connecting portion; 15-thermally conductive insulating spacer; 16-elastic tabletting; 17-a circuit board; 18-a platen; 21-a first edge face; 22-a second edge face; 23-first screw, 24-second screw, 25-third screw; 26-pin; 27-a screw; 28-a first side; 29-second side.
Detailed Description
The following description of the embodiments of the present invention will be described in more detail with reference to the drawings. Advantages and features of the present invention will become apparent from the following description and claims. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention.
In the following, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances.
In the prior art, a transistor is generally bonded to a heat dissipation substrate for heat dissipation, and at present, mounting methods such as horizontal mounting and vertical mounting of the transistor and the heat dissipation substrate are adopted, and fig. 2 to 6 are referred to as a conventional heat dissipation structure diagram. As shown in fig. 2, the transistor 12 is horizontally mounted on the heat dissipation substrate 11, and the transistor 12 is fixed by fastening a screw 27; as shown in fig. 3, the transistor 12 is horizontally mounted on the heat dissipation substrate 11, and the transistor 12 is fixed by applying pressure by a pressing plate 18; as shown in fig. 4, the transistor 12 is vertically and tightly attached to the heat dissipation substrate 11, and the transistor 12 is fixed by fastening a screw 27, and the circuit board 17 is located below the transistor 12; as shown in fig. 6, the transistor 12 is vertically mounted on the heat dissipation substrate 11, and the transistor 12 is fixed by applying pressure by a pressing plate 18; the circuit board 17 is located below the transistor 12.
Through research, the installation mode in fig. 2 has the following defects that the occupied area is large, and the installation mode is not suitable for miniaturization design; the requirement for mounting holes for screws 27 in the transistor 12 results in a reduced heat dissipation area for the transistor 12; the selection limitation of the transistor 12 is increased, for example, the transistor is not suitable for occasions with high insulation and voltage resistance requirements; the compression force of the screws 27 is very likely to cause damage to the transistor 12. The mounting in fig. 3 has the following disadvantage of occupying a large area and is not suitable for a miniaturized design. The mounting in fig. 4 has the disadvantage that the transistor 12 selection has limitations, such as not being suitable for high withstand voltage requirements; the pressing force of the screw 27 is very easy to cause damage to the transistor 12; at the same time, two new problems arise: the screws 27 need to be installed from the inner side of the heat dissipation structure, which is inconvenient for automatic production; not applicable to the layout of the structure with the circuit board 17 above and the transistor 12 below, referring to fig. 5, the screws 27 need to be installed from the inner side of the heat dissipation structure, which results in blocking the screws 27 installed on the transistor 12 when the circuit board 17 is above the transistor 12, thereby resulting in that the module composed of the transistor 12 and the circuit board 17 cannot be stabilized. The mounting in fig. 6 has the disadvantage that it is also not suitable for the layout of the circuit board 17 above and the transistor 12 below, since the mounting in fig. 6 requires a holding plate 18 to be fixed inside the heat sink structure.
In order to overcome the problem of the heat radiation structure of current transistor, the utility model provides a new transistor heat radiation structure for the transistor heat dissipation, as shown in fig. 1, fig. 1 is the embodiment of the utility model provides a transistor heat dissipation structure chart, transistor heat radiation structure includes:
a heat dissipation substrate 11; the transition cooling plate 13 is detachably arranged on the heat dissipation substrate 11 and is perpendicular to the heat dissipation substrate 11, and a plurality of elastic pressing sheets 16 are detachably mounted on the transition cooling plate 13; the transistors 12 are tightly attached to the transition cooling plate 13 through the elastic pressing sheets 16.
The utility model realizes heat dissipation and switching by using the transition cooling plate 13, thereby realizing the heat dissipation function; the transitional cooling plate 13 is perpendicular to the heat dissipation substrate 11, so that the problem of large occupied area is solved, and the transistor 12 is tightly attached to any surface of the transitional cooling plate 13, so that the transistor 12 has at least two mounting surfaces which can be selected, so that the transistor 12 has more choices when being mounted, the problem of inconvenient mounting of the transistor 12 is weakened, the transistor heat dissipation structure is also suitable for structural layout of the circuit board 17 above and below the transistor 12, the convenience of mounting of the transistor heat dissipation structure is improved, and the transistor heat dissipation structure can be conveniently mounted automatically; in addition, the transistor 12 is tightly attached to the transitional cooling plate 13 through the elastic pressing piece 16, so that damage to the transistor 12 is reduced, and defects caused by the way of installing the screw 27 in a fastening mode are avoided.
In addition, a plurality of transistors 12 can be installed on one transition cooling plate 13, so that the space occupation of the transistor heat dissipation structure can be further reduced, the space utilization rate of the transistor heat dissipation structure is effectively improved, and the power density is further improved.
Specifically, the surface of the transitional cooling plate 13, to which the transistor 12 is attached, is a mounting surface, and the transitional cooling plate 13 further includes two opposite edge surfaces, which are a first edge surface 21 and a second edge surface 22, respectively, the edge surfaces intersect with the first mounting surface, and the first edge surface 21 is attached to the heat dissipation substrate 11.
Further, the transition cooling plate 13 further includes two opposite side surfaces, which are a first side surface 28 and a second side surface 29, respectively, the side surfaces, the edge surfaces and the mounting surface are intersected, a connecting portion 14 is disposed at a position of the side surface close to the first edge surface 21, and the transition cooling plate 13 is connected to the heat dissipation substrate 11 through the connecting portion 14.
Furthermore, the side surface, the edge surface and the mounting surface are perpendicularly intersected. So that the transition cooling plate 13 can be perpendicular to the heat-dissipating substrate 11.
Preferably, the shape of the side projection of the transition cooling plate 13 may include, but is not limited to, a rectangle, an i-shape, an L-shape, or the like, and the first edge surface 21 and the second edge surface 22 are parallel.
Further, with continued reference to fig. 1, the transition cooling plate 13 is connected to the heat dissipation substrate 11 through the connection portion 14. In this embodiment, the first edge surface 21 is attached to the heat dissipation substrate 11, the connection portion 14 is disposed on a side surface of the transition cooling plate 13 close to the first edge surface 21, the connection portion 14 is disposed on either one of two side surfaces of the transition cooling plate 13, or the connection portion 14 is disposed on both side surfaces of the transition cooling plate 13, that is, the connection portion 14 is disposed on both the first side surface 28 and the second side surface 29. The connecting portion 14 may be provided with a plurality of threaded holes, or may be provided with a snap structure, so that the transition cooling plate 13 is detachably connected to the heat dissipation substrate 11 through the connecting portion 14. The connecting portion 14 may also be a non-detachable connecting means, such as welding, etc., so that the transition cooling plate 13 is non-detachably connected to the heat dissipation substrate 11 through the connecting portion 14.
In one embodiment, the transitional cooling plate 13 is detachably connected to the heat dissipation substrate 11 by a first screw 23 mounted on the connecting portion 14, and the first screw 23 is perpendicular to the heat dissipation substrate 11 and rotates into the heat dissipation substrate 11. The elastic pressing sheet 16 is detachably connected with the transition cooling plate 13 through a second screw 24 mounted on the connecting portion 14, and the second screw 24 is perpendicular to the transition cooling plate 13 and rotates into the transition cooling plate 13. In this embodiment, the transition cooling plate 13 is connected to the heat dissipation substrate 11 and the elastic pressing piece 16, respectively, and the elastic pressing piece 16 is used to fix the transistor 12 on the transition cooling plate 13, so that the transition cooling plate 13 is connected to the transistor 12 and the heat dissipation substrate 11, respectively, and serves as a heat transfer medium between the transistor 12 and the heat dissipation substrate 11, so as to implement heat dissipation and transfer, thereby implementing a heat dissipation function.
Optionally, the elastic pressing piece 16 is detachably connected with the transition cooling plate 13. Preferably, the number of the elastic pressing pieces 16 is one, and a plurality of transistors 12 are pressed by one elastic pressing piece 16. It should be understood that the number of the elastic pressing pieces 16 may correspond to the number of the transistors 12. That is, each elastic pressing piece 16 presses one transistor 12.
Preferably, a heat conducting insulating pad 15 is disposed between the transistor 12 and the transitional cooling plate 13 for further protecting the transistor 12.
More preferably, a heat conducting glue is disposed between the transition cooling plate 13 and the heat dissipation substrate 11. For further facilitating heat transfer. It should be understood that a heat conducting insulating pad 15 may also be disposed between the transition cooling plate 13 and the heat dissipating substrate 11. The heat conduction is further promoted by the thermally conductive insulating gasket 15.
Further, with continued reference to fig. 1, a circuit board 17 is disposed at a second edge surface 22 of the intermediate cooling plate 13, and the circuit board 17 is closely attached to the second edge surface. The circuit board 17 is perpendicular to the transitional cooling plate 13. The circuit board 17 is detachably connected to the transition cooling plate 13 by a third screw 25, and the third screw 25 is parallel to the transition cooling plate 13 and rotates into the transition cooling plate 13.
In the present invention, the transistor 12 includes a pin 26, a plurality of insertion holes are provided on the circuit board 17, the pin 26 is inserted into the insertion holes so that the transistor 12 is connected to the circuit board 17. The pins 26 are perpendicular to the circuit board 17, and when the pins are inserted into the insertion holes, the pins are linear and perpendicular to the circuit board. I.e. the pins 26 of the transistor 12 need not be bent and can be directly connected to the circuit board 17. The bending process of the pins 26 of the transistor 12 can be reduced in the production process, and the production efficiency is further improved.
To sum up, the utility model provides a transistor heat radiation structure for the transistor heat dissipation, transistor heat radiation structure includes heat dissipation base plate, transition cooling plate, transistor and elasticity preforming. The transition cooling plate is detachably arranged on the heat dissipation substrate and is vertical to the heat dissipation substrate, and a plurality of elastic pressing sheets are detachably mounted on the transition cooling plate; the plurality of transistors are tightly attached to the transition cooling plate through the elastic pressing sheets, so that the space occupation of the transistor heat dissipation structure can be further reduced, the space utilization rate of the transistor heat dissipation structure is effectively improved, and the power density is further improved. In addition, transition cooling plate, elasticity preforming and transistor among the transistor heat radiation structure form a structure wholly for transistor heat radiation structure can the modularization installation, has reduced the installation difficulty of transistor, more makes the transistor be convenient for through automatic technology installation. In addition, the transistor is tightly attached to the transitional cooling plate through the elastic pressing sheet, and damage to the transistor can be reduced.
The above description is only for the preferred embodiment of the present invention, and does not limit the present invention. Any technical personnel who belongs to the technical field, in the scope that does not deviate from the technical scheme of the utility model, to the technical scheme and the technical content that the utility model discloses expose do the change such as the equivalent replacement of any form or modification, all belong to the content that does not break away from the technical scheme of the utility model, still belong to within the scope of protection of the utility model.
Claims (10)
1. A transistor heat dissipation structure for dissipating heat for a transistor, the transistor heat dissipation structure comprising:
a heat-dissipating substrate;
the transition cooling plate is detachably arranged on the heat dissipation substrate and is vertical to the heat dissipation substrate, and a plurality of elastic pressing sheets are detachably mounted on the transition cooling plate; and the transistors are tightly attached to the transitional cooling plate through the elastic pressing sheets.
2. The transistor heat dissipation structure of claim 1, wherein the surface of the transition cooling plate adjacent to the transistor is a mounting surface, the transition cooling plate further comprises two opposite edge surfaces, respectively a first edge surface and a second edge surface, the edge surfaces intersect with the mounting surface, and the first edge surface is adjacent to the heat dissipation substrate.
3. The transistor heat dissipation structure of claim 2, wherein a thermally conductive paste is disposed between the first edge surface and the heat dissipation substrate.
4. The transistor heat sink structure of claim 2, wherein a circuit board is disposed on the second edge surface of the intermediate cooling plate, the circuit board being in close proximity to the second edge surface.
5. The transistor heat dissipation structure of claim 4, wherein the transistor comprises pins, and the circuit board is provided with a plurality of insertion holes, and the pins are inserted into the insertion holes to connect the transistor and the circuit board.
6. The transistor heat dissipation structure of claim 5, wherein the pins are linear and perpendicular to the circuit board when inserted into the insertion holes.
7. The transistor heat dissipation structure of claim 2, wherein the transition cooling plate further comprises two opposite side surfaces, namely a first side surface and a second side surface, the side surfaces and the edge surface intersect with the mounting surface, a connecting portion is disposed at a position of the side surface close to the first edge surface, and the transition cooling plate is connected to the heat dissipation substrate through the connecting portion.
8. The transistor heat dissipation structure of claim 7, wherein the side surfaces, the edge surfaces and the mounting surface all perpendicularly intersect.
9. The transistor heat dissipation structure of claim 1, wherein the resilient tabs are removably coupled to the transition cooling plate.
10. The transistor heat dissipation structure of claim 1, wherein a thermally conductive insulating spacer is disposed between the transistor and the transition cooling plate.
Priority Applications (1)
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CN202021753703.9U CN213026104U (en) | 2020-08-20 | 2020-08-20 | Transistor heat radiation structure |
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CN202021753703.9U CN213026104U (en) | 2020-08-20 | 2020-08-20 | Transistor heat radiation structure |
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CN213026104U true CN213026104U (en) | 2021-04-20 |
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CN202021753703.9U Active CN213026104U (en) | 2020-08-20 | 2020-08-20 | Transistor heat radiation structure |
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