CN212874720U

CN212874720U - High-power aluminum nitride ceramic load sheet

Info

Publication number: CN212874720U
Application number: CN202022334652.2U
Authority: CN
Inventors: 陈建良
Original assignee: Suzhou City Prudential's Electronics Co ltd
Current assignee: Suzhou City Prudential's Electronics Co ltd; Suzhou New Chengshi Electronic Co Ltd
Priority date: 2020-10-20
Filing date: 2020-10-20
Publication date: 2021-04-02
Anticipated expiration: 2030-10-20

Abstract

The utility model discloses a high-power aluminium nitride ceramic load piece, include: the circuit comprises an aluminum nitride substrate, silver paste leads, a first resistor, a second resistor, a bonding pad, a grounding piece and a back conductor; the first resistor and the second resistor are fixedly arranged on the surface of the aluminum nitride substrate, and the side edge of the first resistor is aligned to the side edge of the aluminum nitride substrate; the grounding part is connected to the first resistor and the aluminum nitride substrate; the welding disc is arranged on the adjacent side edge of the aluminum nitride substrate provided with the first resistor and is sequentially connected with the second resistor and the first resistor through silver paste leads; the back conductor is arranged on the other surface of the aluminum nitride substrate and is in contact with the grounding piece. This application is through setting up two resistances, under the circumstances of guaranteeing resistive area, through suitable position adjustment, can guarantee the microwave characteristic of product, guarantees the rated power of product. The application adopts the ladder resistor, so that the influence of the resistor area on the microwave characteristic of the product is the lowest.

Description

High-power aluminum nitride ceramic load sheet

Technical Field

The utility model belongs to the technical field of load piece technique and specifically relates to a high-power aluminium nitride ceramic load piece is related to.

Background

The high-power aluminum nitride ceramic load chip is an indispensable component in the base station power amplifier due to small volume and good heat dissipation. Over 10 years ago, the high-power aluminum nitride ceramic load sheet in China mainly depends on import, and along with continuous effort and development in the field of the high-power aluminum nitride ceramic load sheet in China in the present year, the high-power aluminum nitride ceramic load sheet has design and manufacturing capabilities for manufacturing most of the high-power ceramic load sheets, especially the high-power aluminum nitride ceramic load sheet within 300W, and the high-power aluminum nitride ceramic load sheet can be independently researched, developed and produced for hundreds of households in China, and can meet the application in the current 4G and 5G communication fields. However, in some special industries, the use frequency is low, and high-power aluminum nitride ceramic loading plates with higher power, such as 400W, 600W, or 800W, are used, and the high-power loading of 800W is mainly imported at present. The cost is high, the transportation period is long, and the problems of maintenance and repair are difficult to obtain.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a high-power aluminium nitride ceramic load piece.

To achieve the above object, the present invention adopts the following:

a high power aluminum nitride ceramic load sheet comprising: the circuit comprises an aluminum nitride substrate, silver paste leads, a first resistor, a second resistor, a bonding pad, a grounding piece and a back conductor; the first resistor and the second resistor are fixedly arranged on the surface of the aluminum nitride substrate, and the side edge of the first resistor is aligned to the side edge of the aluminum nitride substrate; the grounding part is connected to the first resistor and the aluminum nitride substrate; the welding disc is arranged on the adjacent side edge of the aluminum nitride substrate provided with the first resistor and is sequentially connected with the second resistor and the first resistor through silver paste leads; the back conductor is arranged on the other surface of the aluminum nitride substrate and is in contact with the grounding piece.

Preferably, the first resistor and the second resistor have equal areas and are both ladder resistors.

Preferably, the ground member is a silver paste layer.

Preferably, the area of the back conductor is equal to that of the aluminum nitride substrate, and the back conductor covers the surface of the other layer of the aluminum nitride substrate.

Preferably, a protective film is disposed over the first resistor and the second resistor.

Preferably, the connection part of the silver paste lead and the first resistor and the second resistor is provided with a connection surface covered with silver paste.

The utility model has the advantages of it is following:

1. this application is through setting up two resistances, under the circumstances of guaranteeing resistive area, through suitable position adjustment, can guarantee the microwave characteristic of product, guarantees the rated power of product.

2. The application adopts the ladder resistor, so that the influence of the resistor area on the microwave characteristic of the product is the lowest.

3. This application adopts ordinary material, and the cost of manufacture is lower, is convenient for later maintenance and change.

Drawings

The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.

Fig. 1 is a schematic diagram of a front structure of a high-power aluminum nitride ceramic load plate according to the present invention.

Fig. 2 is a schematic side view of a high-power aluminum nitride ceramic load plate according to the present invention.

Fig. 3 is a schematic diagram of a back structure of a high-power aluminum nitride ceramic load plate according to the present invention.

In the figures, the various reference numbers are:

the circuit comprises 1-aluminum nitride substrate, 2-silver paste lead, 3-first resistor, 4-second resistor, 5-welding disc, 6-grounding piece, 7-back conductor and 8-protective film.

Detailed Description

In order to illustrate the invention more clearly, the invention is further described below with reference to preferred embodiments. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "front", "rear", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected" and "disposed" are to be construed broadly, and may for example be fixedly connected, disposed, detachably connected, disposed, or integrally connected and disposed. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

As shown in fig. 1 to 3, a high power aluminum nitride ceramic loading plate includes: the circuit comprises an aluminum nitride substrate 1, silver paste leads 2, a first resistor 3, a second resistor 4, a bonding pad 5, a grounding piece 6 and a back conductor 7; the first resistor 3 and the second resistor 4 are fixedly arranged on the surface of the aluminum nitride substrate 1, and the side edge of the first resistor 3 is aligned to the side edge of the aluminum nitride substrate 1; the area of first resistance 3 and second resistance 4 equals to be the ladder resistance, silver thick liquid wire 2 has the connection face that covers the silver thick liquid with the junction of first resistance 3 and second resistance 4.

It can be understood that the above shows that the first resistor 3 is fixed on the side of the aluminum nitride substrate 1, and the second resistor 4 has no more installation requirements for position, because the microwave characteristics of the product are affected by the excessively large resistor area, and the influence on the microwave characteristics can be minimized by adjusting the installation position of the second resistor 4, so that the product meets both the rated power and the microwave characteristics through the series connection of multiple resistors.

It should be noted that, the size of the aluminum nitride ceramic load sheet is 32 × 25 × 3.0mm, and it is required that the characteristic thereof can reach 1000MHz, and the standing wave satisfies 1.2: 1max, the rated power can reach 800W.

Further, a protective film 8 is disposed above the first resistor 3 and the second resistor 4. The protective film 8 is used for protecting an internal circuit of the high-power load chip, and the silver paste lead 2 is sensitive and is easily affected by moisture in the air, so that quality problems are caused. The protective film 8 is a vacuum film commonly used in the prior art and is attached to and covers the first resistor 3, the second resistor 4 and the whole upper part of the silver paste lead 2.

Further, the grounding member 6 is connected to the first resistor 3 and the aluminum nitride substrate 1; the grounding piece 6 is a silver paste layer. One side of the first resistor 3 and one side of the aluminum nitride substrate 1 are aligned, and silver paste is coated on the aligned part to form a silver paste layer for grounding.

Further, the pad 5 is disposed on an adjacent side of the aluminum nitride substrate 1 where the first resistor 3 is mounted, and is sequentially connected to the second resistor 4 and the first resistor 3 through a silver paste lead 2; the pad 5 is used for connection to the outside.

It can be understood that the connection processes among the components in the present application, such as the pad 5, the silver paste lead 2, the back conductor 7, etc., are all processes in the prior art, that is, how the pad is connected to the aluminum nitride substrate, etc., and the present application does not improve the mounting process, so the connection process among the components is not described in detail.

Further, the back conductor 7 is disposed on the other surface of the aluminum nitride substrate 1 and contacts the ground member 6. The area of the back conductor 7 is equal to that of the aluminum nitride substrate 1, so that the back conductor 7 covers the other surface of the aluminum nitride substrate 1.

In particular, the areas of the two resistors in the present application can be adaptively adjusted to obtain the best microwave characteristics under the condition of rated power, which is within the protection scope of the present application.

Obviously, the above embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it is obvious for those skilled in the art to make other variations or changes based on the above descriptions, and all the embodiments cannot be exhausted here, and all the obvious variations or changes that belong to the technical solutions of the present invention are still in the protection scope of the present invention.

Claims

1. A high-power aluminum nitride ceramic load sheet is characterized by comprising: the circuit comprises an aluminum nitride substrate (1), silver paste leads (2), a first resistor (3), a second resistor (4), a pad (5), a grounding piece (6) and a back conductor (7); the first resistor (3) and the second resistor (4) are fixedly arranged on the surface of the aluminum nitride substrate (1), and the side edge of the first resistor (3) is aligned to the side edge of the aluminum nitride substrate (1); the grounding piece (6) is connected to the first resistor (3) and the aluminum nitride substrate (1); the welding pad (5) is arranged on the side edge of the aluminum nitride substrate (1) adjacent to the side edge provided with the first resistor (3), and is sequentially connected with the second resistor (4) and the first resistor (3) through silver paste leads (2); the back conductor (7) is arranged on the other surface of the aluminum nitride substrate (1) and is in contact with the grounding piece (6).

2. The high-power aluminum nitride ceramic load chip as claimed in claim 1, wherein the first resistor (3) and the second resistor (4) have equal area and are both ladder-shaped resistors.

3. A high power aluminum nitride ceramic load plate according to claim 1, wherein the grounding member (6) is a silver paste layer.

4. The high-power aluminum nitride ceramic load sheet according to claim 1, wherein the area of the back conductor (7) is equal to the area of the aluminum nitride substrate (1), so that the back conductor (7) covers the other surface of the aluminum nitride substrate (1).

5. A high power aluminum nitride ceramic load chip according to claim 2, wherein a protective film (8) is disposed above the first resistor (3) and the second resistor (4).

6. The high-power aluminum nitride ceramic load chip as claimed in claim 1, wherein the connection of the silver paste lead wire (2) with the first resistor (3) and the second resistor (4) has a connection surface covered with silver paste.