CN214476724U - Radio frequency power resistor - Google Patents
Radio frequency power resistor Download PDFInfo
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- CN214476724U CN214476724U CN202120219749.0U CN202120219749U CN214476724U CN 214476724 U CN214476724 U CN 214476724U CN 202120219749 U CN202120219749 U CN 202120219749U CN 214476724 U CN214476724 U CN 214476724U
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- resistance layer
- ceramic substrate
- power resistor
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Abstract
The utility model provides a radio frequency power resistor, including ceramic cover plate, ceramic substrate, first conductor rete, second conductor rete, trapezoidal resistance layer and two lead wires, the one end of trapezoidal resistance layer with first conductor rete electricity is connected, the other end of trapezoidal resistance layer with second conductor rete electricity is connected, first conductor rete, second conductor rete, trapezoidal resistance layer all fixed mounting on ceramic substrate, one of them lead wire with first conductor rete electricity is connected, another lead wire with second conductor rete electricity is connected, ceramic cover plate fixed mounting is in ceramic substrate's top, first conductor rete, second conductor rete, trapezoidal resistance layer, lead wire fixed centre gripping are in ceramic cover plate with between the ceramic substrate; the ceramic substrate is made of beryllium oxide materials, so that the radio-frequency power resistor has good heat conduction and heat dissipation performance.
Description
Technical Field
The utility model relates to a resistor technical field especially relates to a radio frequency power resistor.
Background
With the rapid development of the fields of communication, radar, aviation, aerospace and the like, the requirement on the radio frequency power resistor is higher and higher, and a high frequency power resistor is required to be used at the moment. The high-frequency power resistor is mainly used for impedance matching, power load and the like, and needs to achieve good impedance matching in a frequency range of working frequency up to 6GHz and have sufficiently small dielectric capacitance. Compared with the traditional radio frequency power resistor, the high frequency power resistor has larger area, does not need to be provided with a radiator, and is difficult to realize the requirements of impedance matching and low dielectric capacitance. The power of the radio frequency power resistor is determined by the area of the resistor body, the area of the resistor body is necessarily increased when the power of the resistor is increased, and the distribution parameters of the resistor body are increased after the area of the resistor body is increased, so that the overall impedance is influenced, and the overall frequency characteristic is degraded.
The patent document with the application number of 201620937913.0 provides a high-power high-frequency radio-frequency power resistor with good third-order intermodulation, which comprises a flange plate, a base body, a surface-B electrode, a side electrode, a surface-A electrode, a resistor body, a medium protection layer, a metal lead and a packaging cover plate, wherein the surface-A electrode is arranged on the upper surface of the base body, the surface-B electrode is arranged on the lower surface of the base body, the side electrode is arranged on the side surface of the base body and is connected with the surface-A electrode and the surface-B electrode, and the resistor body is arranged on the surface-A electrode and is stably lapped with a lapping end of the surface-A electrode; the resistor further comprises a medium protection layer which covers the resistor body and plays a role in protection; the electrodes are in three parts and combined into one inverted "Contraband" shaped electrode. The utility model discloses done the modification to the I shape electrode, improved frequency characteristic through the shape that changes the electrode, still possessed good third-order intermodulation characteristic simultaneously. The radio frequency power resistor can have higher frequency and larger power, and can meet the requirement of third-order intermodulation in the mobile communication technology. Although this patent increases the frequency of the resistor, there are problems of low dielectric capacitance, low standing wave ratio, low temperature coefficient at high frequencies, and such a resistor is not suitable for use in the fields of communication, radar, aviation, aerospace, etc. for impedance matching, power loading.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problem, the utility model provides a radio frequency power resistor.
The utility model discloses a following technical scheme realizes:
the utility model provides a radio frequency power resistor, including ceramic cover plate, ceramic substrate, first conductor rete, second conductor rete, trapezoidal resistance layer and two lead wires, trapezoidal resistance layer's one end with first conductor rete electricity is connected, trapezoidal resistance layer's the other end with second conductor rete electricity is connected, first conductor rete the second conductor rete trapezoidal resistance layer equal fixed mounting is in on the ceramic substrate, one of them the lead wire with first conductor rete electricity is connected, another the lead wire with second conductor rete electricity is connected, ceramic cover plate fixed mounting is in ceramic substrate's top, handle first conductor rete the second conductor rete trapezoidal resistance layer the fixed centre gripping of lead wire is in ceramic cover plate with between the ceramic substrate.
Furthermore, a first butt joint plate and a second butt joint plate are arranged on the trapezoidal resistance layer, the first butt joint plate is arranged at the upper bottom of the trapezoidal resistance layer, and the second butt joint plate is arranged at the lower bottom of the trapezoidal resistance layer.
Further, the first conductor film layer comprises a connecting end, and the connecting end is fixedly connected with the first butt joint plate.
Furthermore, first conductor rete still includes connecting piece and input, the one end of connecting piece with link fixed connection, the other end of connecting piece with input fixed connection, the input with the lead wire electricity is connected, the input the connecting piece with the link three is "worker" type.
Furthermore, the second conductor film layer is fixedly installed on the second butt joint plate, and the second conductor film layer is a ground terminal.
Furthermore, the ceramic substrate is made of beryllium oxide.
The utility model has the advantages that:
the radio frequency power resistor provided by the utility model can well protect the conductor film layer and the trapezoidal resistance layer by bonding the ceramic cover plate on the ceramic substrate, and the beryllium oxide ceramic substrate is matched with the ceramic cover plate as the substrate to increase the heat dissipation performance of the radio frequency power resistor; the resistive layer is set to be trapezoidal, the first conductor film layer is set to be I-shaped, and the patterns of the conductor film layer and the resistive layer just realize that the input impedance is matched with the characteristic impedance of an external circuit.
Drawings
Fig. 1 is an exploded view of the rf power resistor of the present invention;
fig. 2 is a schematic diagram of a partial structure of the rf power resistor of the present invention;
fig. 3 is a schematic structural diagram of a trapezoidal resistance layer according to the present invention;
fig. 4 is a schematic structural diagram of the rf power resistor of the present invention.
Detailed Description
In order to more clearly and completely explain the technical scheme of the present invention, the present invention is further explained with reference to the attached drawings.
Referring to fig. 1-4, the present invention provides a radio frequency power resistor, including a ceramic cover plate 11, a ceramic substrate 12, a first conductor film layer 13, a second conductor film layer 17, a trapezoidal resistance layer 18 and two leads 10, wherein one end of the trapezoidal resistance layer 18 is electrically connected to the first conductor film layer 13, the other end of the trapezoidal resistance layer 18 is electrically connected to the second conductor film layer 17, the first conductor film layer 13, the second conductor film layer 17 and the trapezoidal resistance layer 18 are all fixedly mounted on the ceramic substrate 12, one of the leads 10 is electrically connected to the first conductor film layer 13, the other lead 10 is electrically connected to the second conductor film layer 17, the ceramic cover plate 11 is fixedly mounted above the ceramic substrate 12, and the first conductor film layer 13, the second conductor film layer 17, the trapezoidal resistance layer 18, the trapezoidal resistance layer 10 are electrically connected to the second conductor film layer 17, The lead 10 is fixedly clamped between the ceramic cover plate 11 and the ceramic substrate 12. The ceramic substrate 12 is a substrate made of beryllium oxide.
In this embodiment, the trapezoidal resistance layer 18 is obtained on the ceramic substrate 12 by screen printing, the two leads 10 are silver-plated copper tapes, and the leads 10 are electrically connected to the first conductor film layer 13 and the second conductor film layer 17 by welding. Through the connection design of the trapezoidal resistance layer 18, the first conductor film layer 13 and the second conductor film layer 17, the performance that the standing wave ratio of the radio-frequency power resistor with the size of 9m x 6mm and 50 omega is less than or equal to 1.5:1 in 6GHz frequency, the dielectric capacitance is less than or equal to 3pF is realized, the resistance temperature coefficient is less than or equal to 100ppm, and the working temperature range reaches-55 ℃ to 125 ℃.
Further, a first butt plate 19 and a second butt plate 20 are disposed on the trapezoidal resistance layer 18, the first butt plate 19 is disposed at an upper bottom of the trapezoidal resistance layer 18, and the second butt plate 20 is disposed at a lower bottom of the trapezoidal resistance layer 18. The first conductor film layer 13 includes a connection end 16, and the connection end 16 is fixedly connected to the first butt plate 19.
The first conductor film layer 13 further comprises a connecting piece 15 and an input end 14, one end of the connecting piece 15 is fixedly connected with the connecting end 16, the other end of the connecting piece 15 is fixedly connected with the input end 14, the input end 14 is electrically connected with the lead 10, and the input end 14, the connecting piece 15 and the connecting end 16 are in an I shape. The second conductor film 17 is fixedly mounted on the second docking plate 20, and the second conductor film 17 is a ground terminal.
In the present embodiment, the first butt plate 19 is connected to the connection terminal 16, the second butt plate 20 is connected to the second conductor film layer 17, and the trapezoidal resistance layer 18 can fasten the first conductor film layer 13 and the second conductor film layer 17 to the ceramic substrate 12. The input end 14, the connecting piece 15 and the connecting end 16 are in an I shape, the width of the input end 14 is larger than that of the connecting end 16, the input end 14 and the lead 10 can be conveniently welded, and the size of the connecting end 16 is just matched with that of the first butt joint plate 19.
Of course, the present invention can also have other various embodiments, and based on the embodiments, those skilled in the art can obtain other embodiments without any creative work, and all of them belong to the protection scope of the present invention.
Claims (6)
1. A radio frequency power resistor is characterized by comprising a ceramic cover plate, a ceramic substrate, a first conductor film layer, a second conductor film layer, a trapezoidal resistance layer and two leads, one end of the trapezoidal resistance layer is electrically connected with the first conductor film layer, the other end of the trapezoidal resistance layer is electrically connected with the second conductor film layer, the first conductor film layer, the second conductor film layer and the trapezoidal resistance layer are all fixedly arranged on the ceramic substrate, one of the lead wires is electrically connected with the first conductor film layer, the other lead wire is electrically connected with the second conductor film layer, the ceramic cover plate is fixedly arranged above the ceramic substrate, and the first conductor film layer, the second conductor film layer, the trapezoidal resistance layer and the lead are fixedly clamped between the ceramic cover plate and the ceramic substrate.
2. The rf power resistor according to claim 1, wherein a first butt plate and a second butt plate are disposed on the resistance layer, the first butt plate is disposed at an upper bottom of the resistance layer, and the second butt plate is disposed at a lower bottom of the resistance layer.
3. The radio frequency power resistor of claim 2, wherein the first conductor film layer includes a connection end fixedly connected with the first butt plate.
4. The rf power resistor according to claim 3, wherein the first conductor film layer further comprises a connecting member and an input end, one end of the connecting member is fixedly connected to the connecting end, the other end of the connecting member is fixedly connected to the input end, the input end is electrically connected to the lead, and the input end, the connecting member and the connecting end are "i" shaped.
5. The radio frequency power resistor of claim 2, wherein the second conductor film is fixedly mounted on the second docking plate, the second conductor film being a ground.
6. The radio frequency power resistor of claim 1, wherein the ceramic substrate is a substrate made of beryllium oxide material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120219749.0U CN214476724U (en) | 2021-01-26 | 2021-01-26 | Radio frequency power resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120219749.0U CN214476724U (en) | 2021-01-26 | 2021-01-26 | Radio frequency power resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214476724U true CN214476724U (en) | 2021-10-22 |
Family
ID=78116503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120219749.0U Active CN214476724U (en) | 2021-01-26 | 2021-01-26 | Radio frequency power resistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214476724U (en) |
-
2021
- 2021-01-26 CN CN202120219749.0U patent/CN214476724U/en active Active
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