CN211929896U

CN211929896U - Silicon chip window assembly with silicon substrate transversely injected

Info

Publication number: CN211929896U
Application number: CN202020579424.9U
Authority: CN
Inventors: 郭丽彬; 张永刚
Original assignee: Gretel Tianjin Optoelectronics Technology Co ltd
Current assignee: Gretel Tianjin Optoelectronics Technology Co ltd
Priority date: 2020-04-17
Filing date: 2020-04-17
Publication date: 2020-11-13
Anticipated expiration: 2030-04-17

Abstract

The utility model discloses a silicon-based silicon chip window subassembly that transversely pours into, including reflection assembly, collecting region and end liner, the top movable mounting of end liner has the base, the top movable mounting of base has the emission subassembly, the both sides at emission subassembly top are all fixed and are provided with the silicon chip body, all fixed collecting electrode that is provided with between the silicon chip body, the fixed reflection assembly that is provided with in top in collecting region. The utility model discloses rational in infrastructure, make this silicon chip window subassembly that silicon-based transversely pours into utilizes full dielectric reflection film to establish on multi-beam interference basis through having installed a series of structures, and opposite with the antireflection coating, plate the film that the one deck refracting index is higher than matrix material on optical surface, just can increase optical surface's reflectivity, the projecting pole electric current is the biggest, adds a very little electric current at the base, just can export or input very big electric current at the collecting electrode, can amplify signal, long service life.

Description

Silicon chip window assembly with silicon substrate transversely injected

Technical Field

The utility model belongs to the technical field of the silicon chip window, in particular to silicon-based silicon chip window subassembly that transversely pours into.

Background

With the integration of silicon integrated circuits becoming higher and the speed of information transmission becoming faster and faster, the conventional electrical interconnections have shown technical limitations and cannot meet the requirements of high bandwidth and low power consumption, while the optical interconnections have the characteristics of high speed, high bandwidth, low power consumption and the like, so people urgently expect that the optical interconnections can be realized at short distances, even silicon-based optical interconnections between chips and inside chips, and other devices except silicon-based light sources in the most important basic devices in the silicon-based optical interconnections can be realized under the current silicon process conditions, so that the high-efficiency silicon-based light sources become the most challenging targets in the silicon-based optical interconnections.

However, the existing silicon chip window assembly has some problems, the electrode of the existing silicon chip window assembly does not well avoid the absorption of light, the waveguide side wall formed by etching has large light loss and short service life, and is inconvenient for workers to disassemble and assemble, so that the use of the workers is influenced.

SUMMERY OF THE UTILITY MODEL

In order to overcome the not enough of prior art, the utility model provides a silicon chip window subassembly that silica-based transversely poured into to the absorption of the current silicon chip window subassembly that provides in solving above-mentioned background art to the light is not fine to be avoided, and the waveguide lateral wall optical loss that the sculpture formed is big, and life is short, and inconvenient staff carries out the dismouting moreover, influences the staff and uses.

In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a silicon chip window subassembly that silica-based transversely poured into, includes reflection assembly, collecting region and end liner, the top movable mounting of end liner has the base, the top movable mounting of base has emission assembly, the both sides at emission assembly top all fixedly are provided with the silicon chip body, all fixedly between the silicon chip body be provided with the collecting electrode, the fixed collecting region that is provided with between the collecting electrode, the fixed reflection assembly that is provided with in top in collecting region.

Preferably, the reflection assembly includes a reflection film, both sides of the reflection film are fixedly provided with silicon dioxide, and the top of the silicon dioxide is fixedly provided with an emitter.

Preferably, both sides of the collector region are fixedly provided with the clamping seats, and the top of the collector region is fixedly provided with the front electrode.

Preferably, the emission assembly comprises silicon nitride, and aluminum oxide is fixedly arranged on the top of the silicon nitride.

Preferably, the surface of the bottom lining is equidistantly provided with heat dissipation holes, the two sides of the bottom lining are fixedly provided with positioning blocks, and the positioning blocks are fixedly provided with positioning holes inside.

Preferably, the both sides at base top all are fixed and are provided with the aluminium back of the body field, the both sides of base all are fixed and are provided with the back electrode.

Compared with the prior art, the utility model provides a silicon chip window subassembly that silica-based transversely poured into possesses following beneficial effect:

1. the utility model discloses set up reflection assembly, projecting pole, reflectance coating and silica, full dielectric reflectance coating is established on multi-beam interference basis, and is opposite with the antireflection coating, plates the film that the one deck refracting index is higher than matrix material on optical surface, just can increase optical surface's reflectivity, and the projecting pole electric current is the biggest, adds a very little electric current at the base, just can export or input very big electric current at the collecting electrode, can amplify signal, long service life.

2. The utility model discloses installed end liner, locating piece, louvre and locating hole, utilized the locating hole can cooperate external positioning device to fix a position this device, utilized the louvre to dispel the heat to silicon chip window subassembly after that, guaranteed the normal use of silicon chip window subassembly.

Drawings

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description, do not constitute a limitation of the invention, in which:

fig. 1 is a schematic structural diagram of the present invention;

fig. 2 is a front view of the present invention;

fig. 3 is a schematic view of a partial structure of the base according to the present invention;

fig. 4 is a schematic view of a local structure of a collector region according to the present invention;

in the figure: 1. a reflective component; 101. an emitter; 102. a reflective film; 103. silicon dioxide; 2. a collector region; 201. a front electrode; 202. a card holder; 3. a collector electrode; 4. a transmitting assembly; 401. alumina; 402. silicon nitride; 5. a bottom lining; 501. positioning blocks; 502. heat dissipation holes; 503. positioning holes; 6. a silicon wafer body; 7. a base; 701. an aluminum back field; 702. and a back electrode.

Detailed Description

The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are presented herein only to illustrate and explain the present invention, and not to limit the present invention.

Referring to fig. 1-4, the present invention provides a technical solution: a silicon chip window component with silicon substrate transversely injected comprises a reflection component 1, a collector region 2 and a bottom lining 5, wherein a base 7 is movably installed at the top of the bottom lining 5, an aluminum back field 701 is used for improving the efficiency of a silicon solar cell, after a P-n junction is prepared, an aluminum film is often deposited on the back surface of a silicon chip, namely a backlight surface, to prepare a P + layer, namely the aluminum back field 701, the probability of minority carriers in back surface recombination is reduced, the aluminum back field can also be used as a metal electrode on the back surface, a positioning hole 503 can be matched with external positioning equipment to position the device, then the silicon chip window component is radiated by using a radiating hole 502 to ensure the normal use of the silicon chip window component, an emission component 4 is movably installed at the top of the base 7, the crystal cell parameter of silicon nitride 402 is different from that of simple substance silicon, therefore, according to different deposition methods, the generated silicon nitride film 402 can generate, especially when using plasma enhanced chemical vapor deposition technology, tension can be reduced by adjusting deposition parameters, silicon nitride 402 ceramic material has excellent performances of high thermal stability, strong oxidation resistance and high product size accuracy, silicon wafer bodies 6 are fixedly arranged on both sides of the top of an emission assembly 4, collectors 3 are fixedly arranged between the silicon wafer bodies 6, collector regions 2 are fixedly arranged between the collectors 3, and the collector regions 2 are characterized in that the area is large relative to a base region and an emission region, the collector 3 is the pole led out from the collector region 2, a reflection assembly 1 is fixedly arranged on the top of the collector region 2, a full dielectric reflection film 102 is established on the basis of multi-beam interference, opposite to an antireflection film, a film with a refractive index higher than that of the base material is plated on an optical surface, so that the reflectivity of the optical surface can be increased, and the current of an emitter 101 is the maximum, a very small current is added to the base electrode, so that a very large current can be output or input to the collector electrode 3, signals can be amplified, and the service life is long.

The utility model discloses in, it is preferred, reflection assembly 1 includes reflectance coating 102, reflectance coating 102's both sides are all fixed and are provided with silicon dioxide 103, the fixed projecting pole 101 that is provided with in top of silicon dioxide 103, all dielectric reflectance coating 102 is established on multi-beam interference basis, opposite with the antireflection coating, plate the film that the one deck refracting index is higher than matrix material on optical surface, just can increase optical surface's reflectivity, projecting pole 101 electric current is the biggest, add a very little electric current at the base, just can export or input very big electric current at collecting electrode 3, can amplify the signal, long service life.

The utility model discloses in, preferred, collecting region 2's both sides are all fixed and are provided with cassette 202, and collecting region 2's top is fixed and is provided with positive electrode 201, and collecting region 2's characteristics are that the area is very big for base region and emission area, and the limit that draws forth from collecting region 2 is exactly collecting electrode 3.

The utility model discloses in, it is preferred, emission subassembly 4 includes silicon nitride 402, and the fixed aluminium oxide 401 that is provided with in top of silicon nitride 402, the unit cell parameter of silicon nitride 402 is different with simple substance silicon, consequently according to deposition method's difference, the silicon nitride film 402 that generates can produce tension or stress, especially when using plasma enhanced chemical vapor deposition technique, can reduce tension through adjusting the deposition parameter, silicon nitride 402 ceramic material has the thermal stability height, the oxidation resistance is strong and the high performance such as product size accuracy.

The utility model discloses in, preferred, the surperficial equidistance of end liner 5 is provided with louvre 502, and the both sides of end liner 5 are fixed mounting all has locating piece 501, and locating piece 501's inside is all fixed and is provided with locating hole 503, and locating hole 503 can cooperate external positioning device to fix a position this device, utilizes louvre 502 to dispel the heat to silicon chip window subassembly after that, guarantees the normal use of silicon chip window subassembly.

The utility model discloses in, preferred, the both sides at base 7 top are all fixed and are provided with aluminium back of the body field 701, and base 7's both sides are all fixed and are provided with back electrode 702, and aluminium back of the body field 701 is in order to improve silicon solar cell's efficiency, and after P-n knot preparation was accomplished, often at the back of silicon chip promptly the shady side, deposit one deck aluminium membrane, preparation P + layer is called aluminium back of the body field 701, reduces the probability that minority carrier is compound at the back, also can regard as the metal electrode at the back.

The utility model discloses a theory of operation and use flow: in the using process of the device, the positioning hole 503 is matched with external positioning equipment to position the device, then, the heat dissipation holes 502 are utilized to dissipate heat of the silicon chip window assembly, so as to ensure the normal use of the silicon chip window assembly, then after the preparation of the P-n junction is finished, a layer of aluminum film is usually deposited on the back surface of the silicon wafer, namely a backlight surface, a P + layer is prepared, the aluminum back field 701 is called, the probability of minority carrier recombination on the back surface is reduced, the silicon nitride can also be used as a metal electrode on the back surface, the unit cell parameters of the silicon nitride 402 are different from those of simple substance silicon, therefore, depending on the deposition method, the resulting silicon nitride film 402 may be strained or stressed, particularly, when the plasma enhanced chemical vapor deposition technology is used, the tension can be reduced by adjusting deposition parameters, and the silicon nitride 402 ceramic material has the excellent performances of high thermal stability, strong oxidation resistance, high dimensional accuracy of products and the like.

The embodiments of the present invention are not limited to the above embodiments, and according to the contents of the above embodiments of the present invention, the above preferred embodiments can also make modifications, replacements or combinations of other forms by using conventional technical knowledge and conventional means in the field without departing from the basic technical idea of the present invention, and the obtained other embodiments all fall within the scope of the present invention.

Claims

1. The utility model provides a silicon chip window subassembly that silicon-based transversely poured into, includes reflection assembly (1), collector region (2) and end liner (5), its characterized in that: the top movable mounting of end liner (5) has base (7), the top movable mounting of base (7) has emission subassembly (4), the both sides at emission subassembly (4) top are all fixed and are provided with silicon chip body (6), all fixed collecting electrode (3) that are provided with between silicon chip body (6), fixed collecting region (2) that are provided with between collecting electrode (3), the fixed reflection assembly (1) that is provided with in top of collecting region (2).

2. A silicon-based lateral implanted silicon wafer window assembly as claimed in claim 1 wherein: the reflecting component (1) comprises a reflecting film (102), wherein silicon dioxide (103) is fixedly arranged on two sides of the reflecting film (102), and an emitter (101) is fixedly arranged on the top of the silicon dioxide (103).

3. A silicon-based lateral implanted silicon wafer window assembly as claimed in claim 1 wherein: both sides of the collector region (2) are fixedly provided with clamping seats (202), and the top of the collector region (2) is fixedly provided with a front electrode (201).

4. A silicon-based lateral implanted silicon wafer window assembly as claimed in claim 1 wherein: the emission component (4) comprises silicon nitride (402), and aluminum oxide (401) is fixedly arranged on the top of the silicon nitride (402).

5. A silicon-based lateral implanted silicon wafer window assembly as claimed in claim 1 wherein: the surface of the bottom liner (5) is equidistantly provided with heat dissipation holes (502), two sides of the bottom liner (5) are fixedly provided with positioning blocks (501), and positioning holes (503) are fixedly arranged inside the positioning blocks (501).

6. A silicon-based lateral implanted silicon wafer window assembly as claimed in claim 1 wherein: the aluminum back surface field (701) is fixedly arranged on two sides of the top of the base (7), and the back surface electrodes (702) are fixedly arranged on two sides of the base (7).