CN2118356U - 一种双向晶闸管的门极结构 - Google Patents

一种双向晶闸管的门极结构 Download PDF

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Publication number
CN2118356U
CN2118356U CN 91217587 CN91217587U CN2118356U CN 2118356 U CN2118356 U CN 2118356U CN 91217587 CN91217587 CN 91217587 CN 91217587 U CN91217587 U CN 91217587U CN 2118356 U CN2118356 U CN 2118356U
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crystal shutter
gate pole
pole structure
improved
shutter tube
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CN 91217587
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赵善麒
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Jilin University
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Jilin University
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Priority to CN 91217587 priority Critical patent/CN2118356U/zh
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Abstract

本实用新型是一种新型的双向晶闸管的门极结 构，这种门极结构是在原发明的马蹄状门极区N3发 射区上设置了一排短路点，这种新的门极结构可以大 大改善双向晶闸管的换向特性，改善器件的动态特性 和门极触发特性。

Description

本实用新型是对双向晶闸管的门极结构进行重新改进。
现有的双向晶闸管的门极结构（图1、图2）当N3区宽度较宽时，容易造成器件由Ⅲ象限向Ⅰ象限换向的失败，而且对器件Ⅰ象限的dv／dt耐量不利；当N3区宽度较窄时，将导致器件的Ⅰ、Ⅲ触发电流变大，且不利于器件的di／dt耐量。
本实用新型的目的在于改善双向晶闸管的换向特性，即提高器件换向dv／dt耐量和di／dt耐量，改善器件动态特性，即提高器件的动态dv／dt耐量和di／dt耐量，改善器件的触发特性。
本实用新型改进了一种新的双向晶闸管的门极结构（图3、图4），即在马蹄状门极区的N3区上设置了一排短路点（图3.a、图4.a），该排短路点对换向过程中，开通状态一侧的残余载流子向阻断一侧扩散而形成的扩散电流有一定旁路作用，而这一扩散电流是引起器件换向失败的主要原因，因此提高了器件的换向能力。同样地，这排短路点也可有效地旁路由于动态dv／dt效应而引起的位移电流，提高了器件动态dv／dt耐量。另一方面，这种结构使结型门极的作用加强，从而改善了器件的开通特性和动态di／dt特性。
本实用新型与传统的结构相比，可以大大地改善器件换向dv／dt耐量和di／dt耐量，改善器件的动态特性和门极触发特性。
图1、2是原结构的俯视图和剖面图
图3、4是本实用新型的俯视图和剖面图
实现本实用新型的最好方式是：用B－A1乳胶源代替常规的闭管Ga或Ga－A1扩散来完成P型扩散，控制其表面浓度为2×1018～8×1018cm－3，抛光后，进行高温热氧化，形成一层SiO2膜。最后，进行选择性POC13N型扩散，控制其结深为22～24μm， 表面浓度为6×1020～1×1021cm－3。在门极图形上，取短路点的直径0.25～0.3mm，间距为1.1～1.2mm，r0＝0.5mm，r1＝0.9mm，r2＝1.2mm，r3＝1.9mm，用这种门极结构研制出的200～500A，1000～1200V双向晶闸管其换向dv／dt耐量提高40～50v／μs，换向di／dt耐量提高了4～5A／μs。

Claims (1)

  1. 一种双向晶闸管的门极结构，其特征在于：在门极区N3发射区上设置了一排短路点。
CN 91217587 1991-07-10 1991-07-10 一种双向晶闸管的门极结构 Granted CN2118356U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 91217587 CN2118356U (zh) 1991-07-10 1991-07-10 一种双向晶闸管的门极结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 91217587 CN2118356U (zh) 1991-07-10 1991-07-10 一种双向晶闸管的门极结构

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CN2118356U true CN2118356U (zh) 1992-10-07

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Application Number Title Priority Date Filing Date
CN 91217587 Granted CN2118356U (zh) 1991-07-10 1991-07-10 一种双向晶闸管的门极结构

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CN (1) CN2118356U (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569375A (zh) * 2010-12-09 2012-07-11 意法半导体(图尔)公司 四象限三端双向可控硅开关

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569375A (zh) * 2010-12-09 2012-07-11 意法半导体(图尔)公司 四象限三端双向可控硅开关
CN102569375B (zh) * 2010-12-09 2016-06-01 意法半导体(图尔)公司 四象限三端双向可控硅开关

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