CN211182246U - Current sensor chip - Google Patents
Current sensor chip Download PDFInfo
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- CN211182246U CN211182246U CN202020020783.0U CN202020020783U CN211182246U CN 211182246 U CN211182246 U CN 211182246U CN 202020020783 U CN202020020783 U CN 202020020783U CN 211182246 U CN211182246 U CN 211182246U
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- current conductor
- magnetic field
- sensing unit
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- 239000004020 conductor Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 17
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- 230000005415 magnetization Effects 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
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- 229910052906 cristobalite Inorganic materials 0.000 description 1
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- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
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Abstract
A current sensor chip comprising: a substrate; the current conductor is arranged on the substrate and is connected with an external conductor to be tested through a connecting electrode; the magnetic resistance sensing units are symmetrically arranged on two sides of each current conductor and output detection signals through output electrodes. The utility model discloses bilateral symmetry at the current conductor sets up magnetic resistance sensing unit, utilizes magnetic resistance sensing unit as magnetic field detecting element, because inside the sensing part and the current conductor of sensor all were located the chip, can eliminate external magnetic field's interference, had higher stability, and magnetic resistance sensing unit power consumption is low moreover, can reduce the consumption of sensor. Simultaneously the utility model discloses a sensor can adopt semiconductor technology preparation, has not only improved the integrated level of product, and the structure is compacter, and the volume is littleer, has also reduced manufacturing cost, is convenient for realize large-scale production.
Description
Technical Field
The utility model belongs to the technical field of the current sensing, indicate especially to relate to a current sensor chip.
Background
When current flows through a conductor, a magnetic field is generated in space, the magnetic field is proportional to the magnitude of the current, and the magnetic field is distributed circumferentially around the conductor. The magnitude of the measured current can be detected by detecting the magnitude of the magnetic field generated by the current. The traditional current sensor adopting a magnetic field detection type has the defects of low sensitivity, unstable performance and the like because the interference magnetic field in the environment cannot be distinguished. In addition, along with the development of smart power grids and internet of things technologies, the requirements for chip-level current measurement schemes are more and more, and the traditional current sensor is limited in application due to low integration level, large size and poor manufacturing consistency.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a can avoid magnetic field interference, current sensor chip that the integrated level is high and preparation method thereof.
In order to achieve the above object, the present invention adopts the following technical solutions:
A current sensor chip comprising: a substrate; the current conductor is arranged on the substrate and is connected with an external current source to be measured through a connecting electrode; the magnetic resistance sensing units are symmetrically arranged on two sides of the current conductor and output detection signals through output electrodes.
Further, the current conductor comprises an even number of parallel conductor segments, the conductor segments are connected end to end, and the distance between adjacent conductor segments is larger than the width of the current conductor.
Further, the magnetoresistive sensing unit includes a pinned layer, a free layer, and a nonmagnetic layer between the pinned layer and the free layer; the magnetization direction of the pinned layer is perpendicular to the chip surface, and the magnetization direction of the free layer is parallel to the chip surface.
Further, an insulating layer is arranged between the magnetoresistive sensing units and the current conductor.
Further, the magnetoresistive sensing unit is a TMR unit or a GMR unit.
According to the above technical scheme, the utility model discloses utilize the magnetic field of current conductor in peripheral symmetric position department can produce the size the same in the z axle direction, the characteristic of opposite direction's magnetic field component, bilateral symmetry at current conductor sets up the magnetic resistance sensing unit, utilize the magnetic resistance sensing unit as magnetic field detecting element, the size of survey electric current according to the magnetic field intensity of being surveyed the electric current and producing, because sensing part and the current conductor of sensor all are located inside the chip, can eliminate external magnetic field's interference, have higher stability, and the magnetic resistance sensing unit power consumption is low, can reduce the consumption of sensor. Simultaneously the utility model discloses a sensor can adopt semiconductor technology preparation, has not only improved the integrated level of product, and the structure is compacter, and the volume is littleer, has also reduced manufacturing cost, is convenient for realize large-scale production.
Drawings
In order to illustrate the embodiments of the present invention more clearly, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained by those skilled in the art without inventive effort.
Fig. 1a is a schematic structural diagram of an embodiment of the present invention;
FIG. 1b is a partial cross-sectional view of an embodiment of the present invention;
FIG. 2a is a schematic view of the position of the current conductor and the magnetoresistive sensing units;
FIG. 2b is a schematic diagram of the peripheral magnetic field when current is applied to the current conductor;
FIG. 2c is a schematic view of magnetic field lines at the left side of the magnetoresistive sensing unit when current is applied to the current conductor;
FIG. 2d is a schematic view of the magnetic field lines at the position of the magnetoresistive sensing units on the right side of the current conductor when current is applied to the current conductor;
Fig. 3 is a schematic structural diagram of a magnetic resistance sensing unit according to an embodiment of the present invention;
FIGS. 4a and 4b are schematic diagrams of the variation of the applied magnetic field in different directions of the magnetic sensing unit and the resulting resistance variation, respectively;
Fig. 5a to 5g are schematic diagrams of a preparation process according to an embodiment of the present invention.
Detailed Description
In order to make the above and other objects, features and advantages of the present invention more apparent, the following embodiments of the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1a and 1b, the current sensor of the present embodiment includes a substrate 1, a magneto-resistive sensing unit 2, and a current conductor 3, wherein the magneto-resistive sensing unit 2 and the current conductor 3 are disposed on the substrate 1, and an insulating layer (not numbered) is disposed between the magneto-resistive sensing unit 2 and the current conductor 3. The current conductor 3 may be in the form of a sheet or wire, the current conductor 3 comprising an even number of mutually parallel conductor segments. The current conductor 3 of this embodiment extends continuously and is substantially S-shaped on the substrate 1, and the current conductor 3 is connected to a current source to be measured outside the sensor through the connecting electrodes 4 and 5, so that the current to be measured can be conducted to the current conductor 3 inside the sensor. Preferably, the distance between adjacent conductor segments is larger than the width of the current conductors 3 to avoid mutual interference between adjacent current conductors. The current conductor which reciprocates for many times on the substrate 1 can improve the density of the magnetic resistance sensing part, increase the signal-to-noise ratio and realize higher integration of the sensing part. In other embodiments, the conductor segments may be independent of each other and connected end-to-end by wires or other conductive structures to form a parallel connection. When only a linear current conductor is disposed on the substrate 1, the two magneto-resistive sensing units on both sides of the current conductor can form a half-bridge output.
The magnetoresistive sensing units 2 are symmetrically disposed on both sides (in the width direction) of the current conductor 3. As shown in fig. 2b, when a current is conducted in the current conductor 3, the current generates a magnetic field at the periphery of the current conductor 3, the direction of the magnetic field being indicated by the arrow. The magnetic field vector on both sides of the current conductor 3 can be decomposed into two components, one in the x-axis direction (direction parallel to the chip surface) and the other in the z-axis direction (direction perpendicular to the chip surface). As shown in fig. 2c and 2d, the components of the magnetic field in the z-axis direction at symmetrical positions on both sides of the current conductor 3 (where the two magneto-resistive sensing cells 2 are located) are the same in magnitude and opposite in direction.
The magneto resistive sensing element 2 is arranged to sense a magnetic field generated by the current in the current conductor 3. The magnetoresistive sensing cells 2 may be magnetoresistive sensors such as TMR cells or GMR cells. As shown in FIG. 3, the magnetoresistive sensing unit 2 mainly includes a pinned layer 2-1, a free layer 2-2, and a nonmagnetic layer 2-3, and the nonmagnetic layer 2-3 is located between the pinned layer 2-1 and the free layer 2-2. The sense direction of the magnetoresistive sensing unit 2 is determined by the magnetization direction 2-1a of the pinned layer 2-1 and the magnetization direction 2-2a of the free layer 2-2. The magnetization direction 2-1a of the pinning layer 2-1 in the magnetoresistive sensing unit 2 is along the z-axis direction and does not change with the change of an external magnetic field; the spontaneous magnetization direction 2-2a of the free layer 2-2 is along the x-axis direction, and when an external magnetic field changes along the z-axis direction, the magnetization direction 2-2a of the free layer 2-2 is linearly transformed, so that the magnetoresistive sensing unit 2 is sensitive to the magnetic field along the z-axis direction, and can detect the magnitude of the magnetic field along the z-axis direction.
As shown in FIG. 4a, when the direction of the applied magnetic field 100 changes in the negative direction along the z-axis, the magnetization direction 2-2a of the free layer gradually rotates in the direction indicated by the arrow 101 in FIG. 4a to be parallel to the magnetization direction 2-1a of the pinned layer with the change of the external magnetic field, and the resistance of the magnetoresistive sensing element gradually decreases, and the change of the resistance is shown by the curve a. When the direction of the applied magnetic field 100 is along the positive z-axis direction as shown in FIG. 4b, the magnetization direction 2-2a of the free layer rotates along the direction of arrow 101 in FIG. 4b with the changing direction of the external magnetic field, and the resistance of the MR sensing unit changes as shown by curve b. Since the magnetic fields on both sides of the current conductor have opposite components in the z-axis direction, the magnetoresistive sensing units on both sides of the current conductor will produce opposite magnetoresistive response conditions.
The magneto-resistive sensing unit 2 is in bridge connection through the input electrodes and the output electrodes (6, 7, 8, 9), so that differential output is realized. For example, the magnetoresistive sensing units 2 on the substrate 1 are divided into 4 groups, and when current passes through the current conductor, the four groups of magnetoresistive sensing units can form a push-pull full-bridge differential output.
The following describes the preparation process of an embodiment of the present invention with reference to fig. 5a to 5 g:
As shown in fig. 5a, a substrate 1 is provided, the surface of the substrate 1 is flat, can be a silicon wafer or glass, has good insulating property, has a resistivity of more than 10M Ω cm, and is subjected to pretreatment such as cleaning and drying;
As shown in fig. 5b, the magnetoresistive sensing units 2 are deposited on the substrate 1 by magnetron sputtering, vacuum evaporation or electroplating;
As shown in fig. 5c, a first insulating layer 4 is deposited on the substrate 1 by magnetron sputtering or ion beam evaporation, the first insulating layer 4 covers the magnetoresistive sensing units 2 and the exposed surface of the substrate 1, and the first insulating layer 4 is polished by a polishing process;
As shown in fig. 5d, the current conductor 3 is deposited on the first insulating layer 4 by vacuum evaporation;
As shown in fig. 5e, a second insulating layer 5 is deposited on the first insulating layer 4, the second insulating layer 5 covering the current conductor 3 and the exposed surface of the first insulating layer 4; the first and second insulating layers can be made of Al 2O3、SiO2And the like; the second insulating layer 5 is used as a protective layer and can play a role in isolating water vapor and oxygen;
As shown in fig. 5f, through holes Q penetrating to the upper surface of the current conductor 3 and the upper surface of the magneto-resistive sensing unit 2 are respectively formed on the insulating layer by using a dry etching method;
As shown in fig. 5g, an electrode layer 6 is deposited in the through-hole Q by vacuum evaporation to form a connection electrode of the current conductor 3 and an output electrode of the magnetoresistive sensing cell 2, respectively.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (5)
1. A current sensor chip, comprising:
A substrate;
The current conductor is arranged on the substrate and is connected with an external current source to be measured through a connecting electrode;
The magnetic resistance sensing units are symmetrically arranged on two sides of the current conductor and output detection signals through output electrodes.
2. The current sensor chip of claim 1, wherein: the current conductor comprises an even number of parallel conductor segments, the conductor segments are connected end to end, and the distance between adjacent conductor segments is larger than the width of the current conductor.
3. The current sensor chip of claim 1 or 2, wherein: the magnetoresistive sensing unit includes a pinned layer, a free layer, and a nonmagnetic layer between the pinned layer and the free layer; the magnetization direction of the pinned layer is perpendicular to the chip surface, and the magnetization direction of the free layer is parallel to the chip surface.
4. The current sensor chip of claim 1, wherein: an insulating layer is arranged between the magnetoresistive sensing units and the current conductor.
5. The current sensor chip of claim 1, wherein: the magnetic resistance sensing unit is a TMR unit or a GMR unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020020783.0U CN211182246U (en) | 2020-01-07 | 2020-01-07 | Current sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020020783.0U CN211182246U (en) | 2020-01-07 | 2020-01-07 | Current sensor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211182246U true CN211182246U (en) | 2020-08-04 |
Family
ID=71803898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020020783.0U Withdrawn - After Issue CN211182246U (en) | 2020-01-07 | 2020-01-07 | Current sensor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211182246U (en) |
-
2020
- 2020-01-07 CN CN202020020783.0U patent/CN211182246U/en not_active Withdrawn - After Issue
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