CN210945856U - 一种生长碳化硅多晶体的生长装置 - Google Patents
一种生长碳化硅多晶体的生长装置 Download PDFInfo
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- CN210945856U CN210945856U CN201922027627.7U CN201922027627U CN210945856U CN 210945856 U CN210945856 U CN 210945856U CN 201922027627 U CN201922027627 U CN 201922027627U CN 210945856 U CN210945856 U CN 210945856U
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- graphite
- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 84
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 84
- 239000010439 graphite Substances 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 48
- 230000008569 process Effects 0.000 abstract description 21
- 239000002994 raw material Substances 0.000 abstract description 11
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000000815 Acheson method Methods 0.000 description 1
- 239000006004 Quartz sand Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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CN201922027627.7U CN210945856U (zh) | 2019-11-21 | 2019-11-21 | 一种生长碳化硅多晶体的生长装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114214723A (zh) * | 2021-12-14 | 2022-03-22 | 山东大学 | 一种准本征半绝缘碳化硅单晶的制备方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114214723A (zh) * | 2021-12-14 | 2022-03-22 | 山东大学 | 一种准本征半绝缘碳化硅单晶的制备方法 |
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Effective date of registration: 20240809 Address after: 410000 No. 399, Changxing Road, Changsha hi tech Development Zone, Changsha City, Hunan Province Patentee after: Hunan San'an Semiconductor Co.,Ltd. Country or region after: China Address before: 362211 enterprise operation center building, Jiangpu community, Chendai Town, Jinjiang City, Quanzhou City, Fujian Province Patentee before: FUJIAN NORSTEL MATERIAL TECHNOLOGIES Co.,Ltd. Country or region before: China |