CN210325792U

CN210325792U - Novel power electronic power MOS module

Info

Publication number: CN210325792U
Application number: CN201921819561.9U
Authority: CN
Inventors: 周文定
Original assignee: Chengdu Scilicon Electric Co ltd
Current assignee: Chengdu Scilicon Electric Co ltd
Priority date: 2019-10-25
Filing date: 2019-10-25
Publication date: 2020-04-14
Anticipated expiration: 2029-10-25

Abstract

The utility model discloses a novel power electronic power MOS module. The power MOS module comprises two groups of power MOS modules, at least 2 MOS tubes connected in parallel in rows are integrated into each group of power MOS module, the source electrode of each MOS tube of each group of power MOS module is connected to the copper foil of the source electrode output end on one DBC board, and the drain electrode of each MOS tube is connected to the copper foil of the drain electrode input end on the DBC board. The utility model discloses with a plurality of MOS pipes side by side the in bank integration on the DBC board, guaranteed the uniformity of each MOS pipe performance, the overall arrangement is compact for the bigger electric current of power MOS module output is fit for bigger power.

Description

Novel power electronic power MOS module

Technical Field

The utility model relates to an electron electric power field, especially a novel power electronic power MOS module.

Background

With the development of electronic power technology, MOS transistors are more and more widely used due to their advantages of good high-frequency performance, small switching loss, high output impedance, small driving power, etc., but currently used power MOS transistors are usually packaged by a single chip, the single-transistor working current generally can only reach 100A-level working current, the parameter difference of each element is large, and the working current cannot meet the requirements of high-power users. At this moment, a plurality of MOS transistors need to be connected in parallel, so that a large current is shared by the plurality of MOS transistors, and a current born by a single MOS transistor is relatively small, so as to ensure safe and stable operation of a chip. In the MOS tube parallel module circuit, due to the wiring problem, a large parasitic capacitance and inductance are generated in the module, and the utilization rate of the module is low.

Disclosure of Invention

The utility model aims to provide a: the utility model provides a novel power electronic power MOS module, the MOS chip integration is power MOS module, improves the overall arrangement and the internal wiring of MOS, improves the module utilization ratio, exports bigger power, reduces the preparation volume of power MOS module, the effectual parasitic capacitance and the inductance that has reduced whole device.

The utility model adopts the technical scheme as follows:

the utility model discloses a novel power electronic power MOS module, the DBC board that has the copper foil including two-sided the covering, still be provided with power MOS module on the DBC board, power MOS module includes two sets of power MOS modules, and every group power MOS module has integrateed a plurality of parallelly connected in bank's MOS pipe, and a plurality of parallelly connected MOS pipe sources of every group power MOS module are connected to the source output end copper foil on a DBC board jointly, and the drain electrode is connected to the drain electrode input end copper foil on the DBC board.

The utility model discloses in, through with a plurality of MOS pipes side by side the in bank integration on the DBC board, the uniformity of each MOS pipe performance has been guaranteed, a plurality of MOS pipes of direct parallelly connected on the DBC board constitute power MOS module, the overall arrangement is compact, make the power MOS module export bigger electric current, be fit for bigger power, the source electrode output end copper foil on the source electrode output end of every group power MOS module is connected to a DBC board, the effectual parasitic inductance that has reduced whole device, the influence of parasitic capacitance etc..

Furthermore, the two groups of power MOS modules are arranged on the DBC board in a centrosymmetric distribution mode, and the copper foil at the source output end of one group of power MOS modules is connected with the copper foil at the drain input end of the other group of power MOS modules. The two groups of power MOS modules are integrated with a plurality of MOS tubes connected in parallel, the drain electrode of each group of power MOS modules is connected to the input loop, and the source electrode of each group of power MOS modules is connected to the output loop.

Furthermore, each group of power MOS module is divided into at least 2 power MOS small modules, and the grid of each power MOS small module is respectively connected with 1 grid end copper foil. The small power MOS modules are connected in parallel, and the grids of the small power MOS modules are not directly connected and are controlled by an external circuit, so that voltage spike pulses of the grids in the application of the device can be effectively reduced.

Furthermore, each power MOS small module integrates at least 1 MOS tube.

Furthermore, the source electrode of the MOS tube of each group of power MOS module is connected to the copper foil of the source electrode output end through an aluminum strip.

Furthermore, the MOS tube of each group of power MOS module is packaged on the copper foil of the input end of the drain electrode by adopting a patch. Adopt paster technology lug connection drain electrode input copper foil with the drain electrode of MOS pipe, not only can effectively reduce the preparation volume of power MOS module, can also reduce the path length of short current, reduce and generate heat, the drain electrode input copper foil is connected to the aluminium strip that need not extra setting again, and then can satisfy the requirement that the heavy current passes through with the drain electrode of MOS pipe.

Further, the DBC plate is made of aluminum nitride. The aluminum nitride ceramic DBC plate is high in heat conductivity, convenient to dissipate heat, high in hardness and long in service life.

To sum up, owing to adopted above-mentioned technical scheme, the beneficial effects of the utility model are that:

1. the utility model relates to a novel power electronic power MOS module, with a plurality of MOS pipes side by side the in bank integration on the DBC board, guaranteed the uniformity of each MOS pipe performance.

2. The utility model relates to a novel power electronic power MOS module, a plurality of MOS pipes of direct parallelly connected on the DBC board constitute power MOS module for power MOS module exports bigger electric current, is fit for bigger power.

3. The utility model relates to a novel power electronic power MOS module, the source electrode of every group power MOS module is connected to the source electrode output end copper foil on a DBC board, and the overall arrangement is compact, the effectual influence that reduces parasitic inductance, parasitic capacitance etc. of whole device.

4. The utility model relates to a novel power electronic power MOS module, the drain electrode of MOS pipe adopts paster technology lug connection drain electrode input copper foil, reduces the preparation volume of power MOS module, reduces the path length of short current, reduces and generates heat, can satisfy the requirement that the heavy current passes through.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:

fig. 1 is a schematic structural diagram of the present invention.

The reference numbers illustrate: the circuit comprises a 1-DBC board, a 2-MOS tube, a 3-grid end copper foil, a 4-source output end copper foil and a 5-drain input end copper foil.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention, i.e., the described embodiments are only some, but not all embodiments of the invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.

All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations where mutually exclusive features are expressly stated.

The features and properties of the present invention will be described in further detail with reference to the following examples.

Example 1

As shown in fig. 1, the utility model relates to a novel power electronic power MOS module, have DBC board 1 of copper foil including two-sided the covering, still be provided with power MOS module on the DBC board 1, power MOS module includes two sets of power MOS modules, and every group power MOS module has integrateed a plurality of MOS pipes 2 that connect in parallel in a row, and a plurality of MOS pipes 2 source electrodes that connect in parallel of every group power MOS module are connected to source output end copper foil 4 on a DBC board 1 jointly, and the drain electrode is connected to drain electrode input end copper foil 5 on the DBC board 1.

Specifically, the two groups of power MOS modules are arranged on the DBC board 1 in a centrosymmetric arrangement manner, wherein a source output end copper foil 4 of one group of power MOS modules is connected with a drain input end copper foil 5 of the other group. The two groups of power MOS modules are integrated with a plurality of MOS tubes 2 which are connected in parallel, the drain electrode of each group of power MOS module is connected to the input loop, and the source electrode of each group of power MOS module is connected to the output loop.

Specifically, each group of power MOS module is divided into at least 2 power MOS small modules, and the grid of each power MOS small module is respectively connected with 1 grid terminal copper foil 3. The small power MOS modules are connected in parallel, and the grids of the small power MOS modules are not directly connected and are controlled by an external circuit, so that voltage spike pulses of the grids in the application of the device can be effectively reduced.

The utility model discloses in, through with a plurality of MOS pipe 2 side by side the in bank integration on DBC board 1, the uniformity of each MOS pipe 2 performance has been guaranteed, a plurality of MOS pipe 2 of direct parallelly connected on the DBC board 1, constitute power MOS module 2, the overall arrangement is compact, make the bigger electric current of power MOS module output, be fit for bigger power, the source electrode output end copper foil 4 on a DBC board 1 is connected to jointly to the source electrode of every group power MOS module, the effectual parasitic inductance that has reduced whole device, the influence of parasitic capacitance etc.

Example 2

This embodiment is a further description of the present invention.

As shown in fig. 1, this embodiment is based on embodiment 1, and in a preferred embodiment of the present invention, at least 1 MOS transistor 2 is integrated in each power MOS small module. By adopting the structure, each power MOS small module can integrate 1, 2 or a plurality of MOS tubes 2 according to actual requirements, so that the power MOS small module has higher integration level, is suitable for higher power and has higher reliability.

Example 3

This embodiment is a further description of the present invention.

As shown in fig. 1, on the basis of the above embodiment, in a preferred embodiment of the present invention, the source of the MOS transistor 2 of each power MOS module is connected to the copper foil 4 of the source output end through an aluminum tape.

The utility model relates to a preferred embodiment, MOS pipe 2 of every group power MOS module all adopts the paster encapsulation on drain electrode input end copper foil 5. Adopt paster technology lug connection drain electrode input copper foil 5 with the drain electrode of MOS pipe 2, not only can effectively reduce the preparation volume of power MOS module, can also reduce the path length of short current, reduce and generate heat, the aluminium strip that need not to additionally set up again connects drain electrode input copper foil 5, and then can satisfy the requirement of heavy current input with the drain electrode of MOS pipe 2.

Example 4

This embodiment is a further description of the present invention.

In this embodiment, on the basis of the above embodiment, in a preferred embodiment of the present invention, the DBC plate 1 is made of aluminum nitride. The aluminum nitride ceramic DBC plate 1 is high in heat conductivity, the MOS tube 2 is convenient to work and radiate, the hardness is high, and the service life is long.

The above description is only for the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can be covered within the protection scope of the present invention without the changes or substitutions conceived by the inventive work within the technical scope disclosed by the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope defined by the claims.

Claims

1. A novel power electronic power MOS module is characterized in that: including two-sided DBC board (1) that has the copper foil that covers, still be provided with the power MOS module on DBC board (1), the power MOS module includes two sets of power MOS modules, and every group power MOS module has integrateed at least 2 MOS pipes (2) that connect in parallel in bank, and MOS pipe (2) source electrode of every group power MOS module are connected to source output end copper foil (4) on a DBC board (1) jointly, and the drain electrode is connected to drain input end copper foil (5) on DBC board (1).

2. A novel power electronic power MOS module according to claim 1, characterized in that: the two groups of power MOS modules are arranged on the DBC board (1) in a centrosymmetric distribution mode, and a source electrode output end copper foil (4) of one group of power MOS modules is connected with a drain electrode input end copper foil (5) of the other group of power MOS modules.

3. A novel power electronic power MOS module according to claim 1 or 2, characterized in that: each group of power MOS module is divided into at least 2 power MOS small modules, and the grid of each power MOS small module is respectively connected with 1 grid terminal copper foil (3).

4. A novel power electronic power MOS module according to claim 1, characterized in that: at least 1 MOS tube (2) is integrated in each power MOS small module.

5. A novel power electronic power MOS module according to claim 1, characterized in that: and the source electrode of the MOS tube (2) of each group of power MOS module is connected to the copper foil (4) of the source electrode output end through an aluminum strip.

6. A novel power electronic power MOS module according to claim 1, characterized in that: and the MOS tube (2) of each group of power MOS module is packaged on the copper foil (5) at the input end of the drain electrode by adopting a patch.

7. A novel power electronic power MOS module according to claim 1, characterized in that: the DBC plate (1) is made of aluminum nitride.