CN219611596U - Half-bridge integrated device - Google Patents
Half-bridge integrated device Download PDFInfo
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- CN219611596U CN219611596U CN202320851702.5U CN202320851702U CN219611596U CN 219611596 U CN219611596 U CN 219611596U CN 202320851702 U CN202320851702 U CN 202320851702U CN 219611596 U CN219611596 U CN 219611596U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The utility model belongs to the technical field of power electronics, and particularly relates to a half-bridge integrated device, which comprises: at least four direct current positive ends of each half-bridge circuit are connected with each other, direct current negative ends of each half-bridge circuit are connected with each other, and alternating current output ends of each half-bridge circuit are connected with each other; the half-bridge circuit includes: the half-bridge subunit, a capacitor and two inductors; the half-bridge subunit is connected with the capacitor in parallel; one end of each inductor is connected with the alternating current output end of the half-bridge subunit, and the other ends of the two inductors are connected with each other; the connection point of the two inductors is an alternating current output end of the half-bridge circuit, the direct current P end of the half-bridge subunit is a direct current positive end of the half-bridge circuit, and the direct current N end of the half-bridge subunit is a direct current negative end of the half-bridge circuit. The utility model realizes compact layout of the devices by means of complete symmetry of the device layout structure and layering layout of the devices, and has the advantages of low parasitic parameters and high consistency.
Description
Technical Field
The utility model belongs to the technical field of power electronics, and particularly relates to a half-bridge integrated device.
Background
Since the 80 s of the 20 th century, various power electronics devices have been increasingly used in industry with the rapid development of power electronics technology. As demand increases, power electronics tend to have high capacity, high power density, and voltage and current levels of switching devices increase. Taking the insulated gate bipolar transistor of the switching device widely used at present as an example, the high-power IGBT module of 600V-6500V and 200A-3600A is widely used. Along with the maturity of silicon carbide material technology, silicon carbide MOSFET also gradually popularizes and applies in fields such as electric automobile, photovoltaic power generation gradually, and the silicon carbide device that matures at present is mainly still single tube device.
The IGBT has a faster switching speed, and the on and off time reaches microsecond level, and the silicon carbide device has a faster switching speed, and the on and off time reaches ten nanosecond level. However, due to the stray inductance in the line, the device will generate a very high current rise rate during switching, which will lead to a very high voltage spike during switching, which voltage spike may damage the switching device, while increasing switching losses and electromagnetic interference noise.
In order to suppress the voltage spikes of the switching tube, it is necessary to reduce the line stray inductance as much as possible, and to employ a snubber circuit of appropriate structural parameters to suppress and absorb the overvoltage. However, even if the structural design of the component is compact enough, the capacitor and the power semiconductor device are large in size, and the capacitor terminals are far away from the two ends of the device, the large parasitic inductance still cannot be avoided, so that the device still has large overvoltage when being turned off, and the threat is caused to the application of the device.
In order to improve the current capacity of the device, the current capacity is usually realized by directly connecting the chips in parallel, but current imbalance is unavoidable when the chips are connected in parallel due to the dispersion of chip parameters and the dispersion of loop parasitic parameters, and the current imbalance is particularly obvious when the chips are connected in parallel on a larger scale. Resulting in lower device current utilization and must be de-rated for use.
Disclosure of Invention
To overcome at least some of the problems in the related art, the present utility model provides a half-bridge integrated device.
In a first aspect, there is provided a half-bridge integrated device including: the direct current positive end of each half-bridge circuit is connected with each other, the direct current negative end of each half-bridge circuit is connected with each other, and the alternating current output end of each half-bridge circuit is connected with each other;
the half-bridge circuit includes: the half-bridge subunit, a capacitor and two inductors; the half-bridge subunit is connected with the capacitor in parallel; one end of each of the two inductors is connected with the alternating current output end of the half-bridge subunit, and the other ends of the two inductors are connected with each other;
the connecting point of the two inductors is an alternating current output end of the half-bridge circuit, a direct current P end of the half-bridge subunit is a direct current positive end of the half-bridge circuit, and a direct current N end of the half-bridge subunit is a direct current negative end of the half-bridge circuit.
Preferably, the half-bridge subunit comprises: the first IGBT single tube and the second IGBT single tube are connected;
the P end of the first IGBT single tube is a direct current positive end of the half-bridge circuit, and the N end of the second IGBT single tube is a direct current negative end of the half-bridge circuit;
and a connecting point between the first IGBT single tube and the second IGBT single tube is connected with one ends of the two inductors.
Preferably, the half-bridge integrated device further includes: the PCB comprises a substrate, a first PCB and a second PCB;
the first PCB is fixed on the substrate through a nylon supporting column;
the second PCB is fixed on the first PCB through four first fixing pieces which are sequentially arranged.
Preferably, the first IGBT single tube and the second IGBT single tube are symmetrically arranged on the substrate;
the capacitors are arranged on the first PCB, and one first fixing piece is arranged between two adjacent capacitors at intervals;
the two inductors are symmetrically arranged on the second PCB.
Preferably, pins of the first IGBT single tube and pins of the second IGBT single tube are fixed on the first PCB by welding;
the capacitor is fixed on the first PCB board through welding, and the capacitor is respectively connected with pins of the first IGBT single tube and the second IGBT single tube through mounting holes on the first PCB board;
the two inductors are fixed on the second PCB board through welding.
Preferably, the half-bridge integrated device further includes: the ceramic piece is arranged between each IGBT single tube and the substrate;
each IGBT single tube and the corresponding ceramic piece are fixed on the substrate through the second fixing piece.
Preferably, the half-bridge integrated device further includes: at least four drive tabs;
the four driving inserting sheets are fixed on one side of the first PCB board through welding.
Preferably, the half-bridge integrated device further includes: the first copper bar, the second copper bar and the third copper bar;
the first copper bar is connected with the direct current positive end of the half-bridge circuit, the second copper bar is connected with the direct current negative end of the half-bridge circuit, and the third copper bar is connected with the alternating current output end of the half-bridge circuit.
Preferably, the first copper bar and the second copper bar are fixed on the first PCB through a third fixing piece;
the third copper bar is fixed on the second PCB through a fourth fixing piece.
Preferably, the inductance is: and a current equalizing inductor.
Preferably, the capacitor is an absorption capacitor.
The present utility model provides a half-bridge integrated device, comprising: the direct current positive end of each half-bridge circuit is connected with each other, the direct current negative end of each half-bridge circuit is connected with each other, and the alternating current output end of each half-bridge circuit is connected with each other; the half-bridge circuit includes: the half-bridge subunit, a capacitor and two inductors; the half-bridge subunit is connected with the capacitor in parallel; one end of each inductor is connected with the alternating current output end of the half-bridge subunit, and the other ends of the two inductors are connected with each other; the connection point of the two inductors is an alternating current output end of the half-bridge circuit, the direct current P end of the half-bridge subunit is a direct current positive end of the half-bridge circuit, and the direct current N end of the half-bridge subunit is a direct current negative end of the half-bridge circuit. The half-bridge integrated device provided by the utility model realizes compact layout of devices by means of complete symmetry of device layout structures and layering layout of devices, and has the advantages of low parasitic parameters and high consistency.
Drawings
In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the utility model, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a circuit diagram of a half-bridge integrated device provided by the present utility model;
fig. 2 is a schematic structural diagram of a half-bridge integrated device according to the present utility model;
fig. 3 is a left side view of a half-bridge integrated device provided by the present utility model;
fig. 4 is a right side view of a half-bridge integrated device provided by the present utility model;
fig. 5 is a schematic structural diagram of a half-bridge integrated device according to the present utility model;
fig. 6 is a rear view of a half-bridge integrated device provided by the present utility model;
FIG. 7 is a top view of a half-bridge integrated device provided by the present utility model;
in the figure, a 1-half-bridge circuit, a 2-direct current positive end, a 3-direct current negative end, a 4-alternating current output end, a 5-half-bridge subunit, a 6-capacitor, a 7-inductor, an 8-first IGBT single tube, a 9-second IGBT single tube, a 10-substrate, an 11-first PCB, a 12-second PCB, a 13-nylon support column, a 14-first fixing piece, a 15-ceramic piece, a 16-second fixing piece, a 17-driving inserting piece, a 18-first copper bar, a 19-second copper bar, a 20-third copper bar, a 21-first mounting hole, a 22-third fixing piece and a 23-fourth fixing piece.
Detailed Description
The following describes the embodiments of the present utility model in further detail with reference to the drawings.
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments of the present utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
As disclosed in the background art, various power electronic devices have been increasingly used in industry with rapid development of power electronic technology since the 80 s of the 20 th century. As demand increases, power electronics tend to have high capacity, high power density, and voltage and current levels of switching devices increase. Taking the insulated gate bipolar transistor of the switching device widely used at present as an example, the high-power IGBT module of 600V-6500V and 200A-3600A is widely used. Along with the maturity of silicon carbide material technology, silicon carbide MOSFET also gradually popularizes and applies in fields such as electric automobile, photovoltaic power generation gradually, and the silicon carbide device that matures at present is mainly still single tube device.
The IGBT has a faster switching speed, and the on and off time reaches microsecond level, and the silicon carbide device has a faster switching speed, and the on and off time reaches ten nanosecond level. However, due to the stray inductance in the line, the device will generate a very high current rise rate during switching, which will lead to a very high voltage spike during switching, which voltage spike may damage the switching device, while increasing switching losses and electromagnetic interference noise.
In order to suppress the voltage spikes of the switching tube, it is necessary to reduce the line stray inductance as much as possible, and to employ a snubber circuit of appropriate structural parameters to suppress and absorb the overvoltage. However, even if the structural design of the component is compact enough, the capacitor and the power semiconductor device are large in size, and the capacitor terminals are far away from the two ends of the device, the large parasitic inductance still cannot be avoided, so that the device still has large overvoltage when being turned off, and the threat is caused to the application of the device.
In order to improve the current capacity of the device, the current capacity is usually realized by directly connecting the chips in parallel, but current imbalance is unavoidable when the chips are connected in parallel due to the dispersion of chip parameters and the dispersion of loop parasitic parameters, and the current imbalance is particularly obvious when the chips are connected in parallel on a larger scale. Resulting in lower device current utilization and must be de-rated for use.
In order to improve the problems, the utility model provides a half-bridge integrated device, which realizes compact layout of the device by means of complete symmetry of device layout structure and layered layout of the device, and has the advantages of low parasitic parameters and high consistency.
The above-described scheme is explained in detail below.
Example 1
The present utility model provides a half-bridge integrated device, as shown in fig. 1, comprising a half-bridge integrated device comprising: at least four half-bridge circuits 1, the direct current positive terminals 2 of each half-bridge circuit 1 are connected with each other, the direct current negative terminals 3 of each half-bridge circuit 1 are connected with each other, and the alternating current output terminals 4 of each half-bridge circuit 1 are connected with each other;
the half-bridge circuit 1 includes: a half-bridge subunit 5, a capacitor 6 and two inductors 7; the half-bridge subunit 5 is connected with the capacitor 6 in parallel; one end of each of the two inductors 7 is connected with the alternating current output end 4 of the half-bridge subunit 5, and the other ends of the two inductors are connected with each other;
the connection point of the two inductors 7 is an alternating current output end 4 of the half-bridge circuit 1, the direct current P end of the half-bridge subunit 5 is a direct current positive end 2 of the half-bridge circuit 1, and the direct current N end of the half-bridge subunit 5 is a direct current negative end 3 of the half-bridge circuit 1.
In some embodiments, the capacity of the capacitor 6 may be, but is not limited to,: 0.1uF.
Further, the half-bridge subunit 5 includes: the first IGBT single tube 8 and the second IGBT single tube 9, and the first IGBT single tube 8 is connected with the second IGBT single tube 9;
the P end of the first IGBT single tube 8 is the direct current positive end 2 of the half-bridge circuit 1, and the N end of the second IGBT single tube 9 is the direct current negative end 3 of the half-bridge circuit 1;
the connection point between the first IGBT single tube 8 and the second IGBT single tube 9 is connected to one end of the two inductors 7.
In some embodiments, the IGBT single tube may be, but is not limited to, composed of a transistor antiparallel with a diode.
Further, as shown in fig. 2, the half-bridge integrated device further includes: a substrate 10, a first PCB 11 and a second PCB 12;
the first PCB 11 is fixed on the substrate 10 through a nylon support column 13;
the second PCB 12 is fixed to the first PCB 11 by four first fixing members 14 arranged in sequence.
As shown in fig. 3 and 4, one end of the first PCB 11 may be fixed to one end of the substrate 10 by one nylon support post 13, and the other end may be fixed to the other end of the substrate 10 by two nylon support posts 13.
In some embodiments, but not limited to, mounting holes matching the size of the nylon support posts 13 may be provided on the first PCB board 11 such that the nylon support posts 13 are fixed to the substrate 10 after passing through the mounting holes matching the size of the nylon support posts 13.
Further, the first IGBT single tube 8 and the second IGBT single tube 9 are symmetrically arranged on the substrate 10;
the capacitors 6 are arranged on the first PCB 11, and a first fixing piece 14 is arranged between two adjacent capacitors 6 at intervals;
the two inductors 7 are symmetrically arranged on the second PCB 12.
In some embodiments, the first fixture 14 may be, but is not limited to, an m3×23 patch screw.
As shown in fig. 7, the first mounting holes 21 may be provided on the second PCB 12, but not limited to, one inductor 7 corresponds to two first mounting holes 21, so that each inductor 7 is fixed on the second PCB 12 through the two first mounting holes 21 corresponding thereto.
It can be understood that by symmetrically arranging the two inductors 7 on the second PCB 12, and welding one end of the inductor 7 in the first mounting hole 21 on the PCB, and welding the other end in the mounting hole of the ac output end 4, the ac impedance of the half-bridge circuit 1 is consistent, and the current sharing consistency of each half-bridge circuit 1 is ensured.
Further, pins of the first IGBT single tube 8 and the second IGBT single tube 9 are fixed on the first PCB 11 through welding;
the capacitor 6 is fixed on the first PCB 11 through welding, and the capacitor 6 is connected with pins of the first IGBT single tube 8 and the second IGBT single tube 9 through second mounting holes on the first PCB 11 respectively;
the two inductors 7 are fixed to the second PCB 12 by soldering.
It should be noted that, the second mounting hole is a hole punched on the first PCB 11, and normal communication of components and the like arranged on the first PCB 11 is not affected.
When the half-bridge integrated device includes four half-bridge circuits 1, there are four first IGBT single tubes 8, four second IGBT single tubes 9, four capacitors 6, and eight inductors 7. As shown in fig. 2-5, four first IGBT single tubes 8 are sequentially arranged on one side of the substrate 10, and four second IGBT single tubes 9 are sequentially arranged on the other side of the substrate 10; the four capacitors 6 are sequentially arranged at the middle position of the first PCB 11; eight inductors 7 are divided into two groups, each group is provided with four inductors 7, one group of inductors 7 are sequentially arranged on one side of the second PCB 12, and the other group of inductors 7 are sequentially arranged on the other side of the second PCB 12.
It can be appreciated that the capacitor 6 is connected across the half-bridge subunit 5 formed by the IGBT single tubes, so that the overvoltage absorption effect is greatly improved.
Further, the half-bridge integrated device further includes: a ceramic sheet 15 disposed between each IGBT single tube and the substrate 10;
each IGBT single tube and its corresponding ceramic plate 15 are fixed to the substrate 10 by means of a second fixing member 16.
Specifically, as shown in fig. 2 and 6, the second fixing member 16 may, but is not limited to, take the form of a spring pressing sheet and a screw, wherein the spring pressing sheet presses two adjacent IGBT single tubes and the ceramic sheet 15 below the IGBT single tubes, and then the spring pressing sheet is fixed by the screw, so that the IGBT single tubes and the ceramic sheet 15 below the IGBT single tubes are fixed on the substrate 10.
It can be appreciated that the heat generated by the IGBT single tube is transferred to the substrate 10 through the ceramic sheet 15, thereby performing a heat dissipation function. In addition, the ceramic sheet 15 has an insulating effect.
Further, the half-bridge integrated device further includes: at least four drive tabs 17;
the four driving inserting pieces 17 are fixed on one side of the first PCB 11 through welding;
wherein the number of driving tabs 17 corresponds to the number of half-bridge subunits 5.
As shown in fig. 7, four driving tabs 17 may be, but are not limited to, soldered to the end of the first PCB board 11 where one nylon support post 13 is located. It will be appreciated that four driving tabs 17 are soldered to the end of the first PCB 11 where one nylon support post 13 is provided to facilitate the arrangement of the four driving tabs 17.
It should be noted that, by soldering the driving tab 17 on the first PCB board 11, the driving signal may directly drive the four-way half-bridge circuit 1.
Further, as shown in fig. 2 to 7, the half-bridge integrated device further includes: a first copper bar 18, a second copper bar 19 and a third copper bar 20;
the first copper bar 18 is connected with the direct current positive end 2 of the half-bridge circuit 1, the second copper bar 19 is connected with the direct current negative end 3 of the half-bridge circuit 1, and the third copper bar 20 is connected with the alternating current output end 4 of the half-bridge circuit 1.
It should be noted that, the three copper bar structures are arranged to be geometrically symmetrical, and each half-bridge circuit 1 realizes that the current paths are completely consistent through equal-length connection, so that the circuit has the advantages of good current sharing characteristic and high reliability. The problem that the parallel performance of chips of the IGBT module is poor due to space arrangement and the stability of a system is affected in the prior art is solved, and the miscellaneous feeling of connecting copper bars is reduced, so that the comprehensive performance of an IGBT single tube is improved.
Further, as shown in fig. 3 and 4, the first copper bar 18 and the second copper bar 19 are fixed on the first PCB 11 by the third fixing member 22;
the third copper bar 20 is fixed on the second PCB board 12 by a fourth fixing member 23.
It should be noted that the embodiments of the present utility model are not limited to the "third fixing member 22" and the "fourth fixing member 23", and may be selected by those skilled in the art according to actual needs, and the "third fixing member 22" and the "fourth fixing member 23" may be, but are not limited to, a combination of a screw and a nut.
In some embodiments, a third mounting hole may be provided on the first PCB 11, so that the third fixing member 22 passes through the third mounting hole to fix the first copper bar 18 and the second copper bar 19 on the first PCB 11; a fourth mounting hole may be provided on the second PCB board 12, but is not limited to, so that the fourth fixing member 23 passes through the fourth mounting hole to fix the third copper bar 20 to the second PCB board 12.
Further, the inductor 7 is a current equalizing inductor 7.
In some embodiments, the current sharing inductor 7 may be, but is not limited to, a differential mode inductor or a common mode inductor;
it should be noted that, because each device is tightly combined with the capacitor 6, parasitic inductance is smaller, so that voltage overshoot of the device is smaller and switching speed is faster; and then current equalization of each half-bridge circuit 1 is realized through the current equalizing inductor.
Further, the capacitor 6 is an absorption capacitor.
The capacitor 6 is an absorption capacitor, and since each device is tightly combined with the absorption capacitor, parasitic inductance is small, and thus voltage overshoot of the device is small, switching speed is high, and reliability is high.
The present utility model provides a half-bridge integrated device, comprising: at least four half-bridge circuits 1, the direct current positive terminals 2 of each half-bridge circuit 1 are connected with each other, the direct current negative terminals 3 of each half-bridge circuit 1 are connected with each other, and the alternating current output terminals 4 of each half-bridge circuit 1 are connected with each other; the half-bridge circuit 1 includes: a half-bridge subunit 5, a capacitor 6 and two inductors 7; the half-bridge subunit 5 is connected with the capacitor 6 in parallel; one end of each of the two inductors 7 is connected with the alternating current output end 4 of the half-bridge subunit 5, and the other ends of the two inductors are connected with each other; the connection point of the two inductors 7 is an alternating current output end 4 of the half-bridge circuit 1, the direct current P end of the half-bridge subunit 5 is a direct current positive end 2 of the half-bridge circuit 1, and the direct current N end of the half-bridge subunit 5 is a direct current negative end 3 of the half-bridge circuit 1. The half-bridge integrated device provided by the utility model realizes compact layout of devices by means of complete symmetry of device layout structures and layering layout of devices, and has the advantages of low parasitic parameters and high consistency.
Finally, it should be noted that: the above embodiments are only for illustrating the technical aspects of the present utility model and not for limiting the same, and although the present utility model has been described in detail with reference to the above embodiments, it should be understood by those of ordinary skill in the art that: modifications and equivalents may be made to the specific embodiments of the utility model without departing from the spirit and scope of the utility model, which is intended to be covered by the claims.
Claims (11)
1. A half-bridge integrated device, the half-bridge integrated device comprising: the direct current positive end of each half-bridge circuit is connected with each other, the direct current negative end of each half-bridge circuit is connected with each other, and the alternating current output end of each half-bridge circuit is connected with each other;
the half-bridge circuit includes: the half-bridge subunit, a capacitor and two inductors; the half-bridge subunit is connected with the capacitor in parallel; one end of each of the two inductors is connected with the alternating current output end of the half-bridge subunit, and the other ends of the two inductors are connected with each other;
the connecting point of the two inductors is an alternating current output end of the half-bridge circuit, a direct current P end of the half-bridge subunit is a direct current positive end of the half-bridge circuit, and a direct current N end of the half-bridge subunit is a direct current negative end of the half-bridge circuit.
2. The half-bridge integrated device of claim 1, wherein the half-bridge subunit comprises: the first IGBT single tube and the second IGBT single tube are connected;
the P end of the first IGBT single tube is a direct current positive end of the half-bridge circuit, and the N end of the second IGBT single tube is a direct current negative end of the half-bridge circuit;
and a connecting point between the first IGBT single tube and the second IGBT single tube is connected with one ends of the two inductors.
3. The half-bridge integrated device of claim 2, wherein the half-bridge integrated device further comprises: the PCB comprises a substrate, a first PCB and a second PCB;
the first PCB is fixed on the substrate through a nylon supporting column;
the second PCB is fixed on the first PCB through four first fixing pieces which are sequentially arranged.
4. The half-bridge integrated device according to claim 3, wherein the first IGBT single tube and the second IGBT single tube are symmetrically arranged on the substrate;
the capacitors are arranged on the first PCB, and one first fixing piece is arranged between two adjacent capacitors at intervals;
the two inductors are symmetrically arranged on the second PCB.
5. The half-bridge integrated device of claim 4, wherein pins of the first IGBT single tube and the second IGBT single tube are each fixed to the first PCB board by soldering;
the capacitor is fixed on the first PCB board through welding, and the capacitor is respectively connected with pins of the first IGBT single tube and the second IGBT single tube through mounting holes on the first PCB board;
the two inductors are fixed on the second PCB board through welding.
6. The half-bridge integrated device of claim 3, wherein the half-bridge integrated device further comprises: the ceramic piece is arranged between each IGBT single tube and the substrate;
each IGBT single tube and the corresponding ceramic piece are fixed on the substrate through the second fixing piece.
7. The half-bridge integrated device of claim 3, wherein the half-bridge integrated device further comprises: at least four drive tabs;
the four driving inserting sheets are fixed on one side of the first PCB board through welding.
8. The half-bridge integrated device of claim 3, wherein the half-bridge integrated device further comprises: the first copper bar, the second copper bar and the third copper bar;
the first copper bar is connected with the direct current positive end of the half-bridge circuit, the second copper bar is connected with the direct current negative end of the half-bridge circuit, and the third copper bar is connected with the alternating current output end of the half-bridge circuit.
9. The half-bridge integrated device of claim 8, wherein the first copper bar and the second copper bar are both fixed to the first PCB board by a third fixing member;
the third copper bar is fixed on the second PCB through a fourth fixing piece.
10. The half-bridge integrated device of claim 1, wherein the inductance is: and a current equalizing inductor.
11. The half-bridge integrated device of claim 1, wherein the capacitance is an absorption capacitance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320851702.5U CN219611596U (en) | 2023-04-17 | 2023-04-17 | Half-bridge integrated device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320851702.5U CN219611596U (en) | 2023-04-17 | 2023-04-17 | Half-bridge integrated device |
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| Publication Number | Publication Date |
|---|---|
| CN219611596U true CN219611596U (en) | 2023-08-29 |
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| CN202320851702.5U Active CN219611596U (en) | 2023-04-17 | 2023-04-17 | Half-bridge integrated device |
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- 2023-04-17 CN CN202320851702.5U patent/CN219611596U/en active Active
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