CN209766405U - 半导体封装 - Google Patents

半导体封装 Download PDF

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CN209766405U
CN209766405U CN201920870221.2U CN201920870221U CN209766405U CN 209766405 U CN209766405 U CN 209766405U CN 201920870221 U CN201920870221 U CN 201920870221U CN 209766405 U CN209766405 U CN 209766405U
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layer
semiconductor package
thickness
semiconductor chip
solder ball
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权容台
金熙喆
文承俊
沈智濔
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Nepes Co Ltd
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Nepes Co Ltd
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Abstract

本实用新型涉及一种半导体封装，其为使用焊球来电连接半导体芯片和印刷电路板的半导体封装，上述半导体封装还包括热缓冲层，上述热缓冲层位于上述半导体芯片的上部并将在半导体芯片产生的热量吸收和分散，上述热缓冲层通过增加上述半导体芯片和上述印刷电路板之间的间隔来减少热传导过程的偏差并具有上述焊球直径的7.5至50％的厚度。

Description

半导体封装
技术领域
本实用新型涉及一种半导体封装，尤其涉及一种层叠型半导体封装。
背景技术
通常，由于印刷电路板的电极端子和半导体芯片的焊盘通过导线电连接，因此通过引线键合(wire bonding)方法制造的半导体封装的尺寸大于半导体芯片的尺寸，而且，引线键合工艺所需的时间被延迟，因此在小型化和批量生产方面具有局限性。
尤其，随着上述半导体芯片的高集成化、高性能化和高速化，已经进行了各种努力来小型化和批量生产半导体封装，例如，提出了通过形成在半导体芯片的焊盘上的由焊料材料或金属材料制成的凸点直接连接半导体芯片的焊盘和印刷电路板的电极端子的半导体封装。
使用上述由焊料材料制成的凸点的半导体封装采用的代表性方法为倒装芯片球栅阵列(FCBGA，flip chip ball grid array)方法或晶圆级芯片尺寸规模封装(WLCSP，wafer level chip size/scale package)方法，而上述由金属材料制成的凸点的半导体封装采用的代表性方法为玻璃上芯片(chip-on-glass)/带载封装(TCP，tape carrierpackage)方法。
根据上述倒装芯片球栅阵列方法，使与半导体芯片的焊盘接触的由焊料材料制成的凸点和基板(substrate)的焊盘电连接，进行底部填充(underfill)以从外部环境或机械问题保护上述由焊料材料制成的凸点，然后通过在与上述半导体芯片接触的基板的背面附着焊球来与印刷电路板的电极端子电连接，以制造半导体封装。在晶圆级芯片尺寸级封装中，为了产品的轻薄短小，可以通过重新布置和由金属材料制成的凸点以使芯片尺寸和封装尺寸相同的方式制造。
根据上述玻璃上芯片方法，在半导体芯片的焊盘上形成由金属材料制成的凸点，通过含有各向异性导电颗粒的聚合物将该凸点和印刷电路板的电极端子热压缩和固化，从而通过由金属材料制成的凸点电连接半导体芯片的焊盘和印刷电路板的电极端子，以制造半导体封装。
下面将描述使用现有焊球(solder ball)将半导体芯片的焊盘电连接到印刷电路板的电极端子的半导体封装结构的示例。
图1为现有半导体封装的部分截面结构图。
参照图1，现有半导体封装包括：树脂涂膜(RCF，Resin Coated Film)2，布置在半导体芯片1的上部全面；重新布线层(RDL，Re-Distribution Layer)3，位于上述树脂涂膜2上部的一部分；钝化层4，以使上述重新布线层3的上部的中心部分暴露的方式形成在重新布线层3的周边上和树脂涂膜2的上面上；金属层(UBM，under bump metallization)5，与暴露的上述重新布线层3接触；焊球6，位于上述金属层5的上部；以及印刷电路板7，其电极部分与上述焊球6接触。
在如上所述的结构中，半导体芯片1可以为圆片级，且其厚度可以根据产品而不同。
上述结构为使用焊球6来电连接形成在半导体芯片1的电极部分和印刷电路板7的电极部分的结构，焊球6的厚度为约200μm。
并且，作为导电层的重新布线层3和金属层5的厚度分别为约6μm和9μm，而作为非导电层的树脂涂膜2和钝化层4的厚度分别为10μm。
上述焊球6、重新布线层3、金属层5、树脂涂膜2及钝化层4的厚度与半导体芯片1的厚度或发热程度无关地应用。
当测试具有上述结构的现有半导体封装时，通过印刷电路板7向半导体芯片1供电。此时，由于印刷电路板7自身的电阻分量和印刷电路板7与焊球6之间的接触电阻分量等而在印刷电路板7产生热量。
并且，在通过接收功率执行预定操作的半导体芯片1也由于其自身的电阻分量和接触电阻分量而产生热量。
此时，半导体芯片1的温度和印刷电路板7的温度会有差异，由于相互不同的热膨胀率而应力施加到焊球6。
尤其，虽然图1中示出一个焊球6，但在半导体封装中使用多个焊球，且半导体芯片1和印刷电路板7的长度(或宽度)方向的热膨胀程度的差异而应力施加到多个焊球6，且位于边缘处的焊球6承受比位于中心部分的焊球更大的应力。
由于上述应力而有可能在焊球6发生裂缝。
当在焊球6中产生裂缝时，半导体封装的特性由于电阻的增加而改变，在严重的情况下，有可能导致半导体封装处于无法使用的状态。
实用新型内容
技术问题
本实用新型要解决的技术问题在于提供可以防止在电连接半导体芯片和印刷电路板的焊球中发生裂缝的半导体封装。
并且，本实用新型要解决的技术问题在于提供具有物理上更稳定的接触结构的半导体封装。
解决问题的方案
为了解决上述技术问题，根据本实用新型的一方面的半导体封装为使用焊球来电连接半导体芯片和印刷电路板的半导体封装，上述半导体封装还包括热缓冲层，上述热缓冲层位于上述半导体芯片的上部并将在半导体芯片产生的热量吸收和分散，上述热缓冲层通过增加上述半导体芯片和上述印刷电路板之间的间隔来减少热传导过程的偏差并具有上述焊球直径的7.5至50％的厚度。
根据本实用新型的一实施例，上述热缓冲层可以为与半导体芯片的一面相接的树脂涂膜或形成在树脂涂膜上的钝化层。
根据本实用新型的一实施例，上述热缓冲层的厚度可以为15至100μm。
根据本实用新型的一实施例，上述钝化层可以具有多层结构，多层结构的最底层可以位于树脂涂膜的整个上部，且安置有上述焊球的金属层可以呈阶梯状位于多层结构的最高层的一部分。
根据本实用新型的一实施例，上述金属层可以包括作为与重新布线层接触的区域的台阶低的区域、位于上述钝化层的上部的台阶高的区域及连接上述台阶低的区域和上述台阶高的区域的台阶面，上述焊球的中心部分可以位于台阶低的区域，上述焊球的周边部分可以位于台阶高的区域。
根据本实用新型的一实施例，上述热缓冲层的厚度和上述半导体芯片的厚度可以被调整，使得半导体封装的整体厚度恒定。
根据本实用新型的一实施例，在上述热缓冲层的上部还可包括环氧模塑料，上述环氧模塑料支撑上述焊球的侧面部。
实用新型的效果
本实用新型具有如下效果，即，通过实际上提高焊球的高度来使半导体芯片和印刷电路板的温度差导致的影响最小化，以能够防止发生裂缝。
本实用新型具有如下效果，即，通过防止在焊球发生裂缝来能够提高半导体装置的耐久性和可靠性。
并且，本实用新型具有如下效果，即，通过物理装置来支撑焊球的侧面部，以能够提高耐久性和可靠性。
附图说明
图1为现有半导体封装的部分截面结构图。
图2为本实用新型的优选实施例的半导体封装的截面结构图。
图3为图2的部分详细图。
图4a至图4c为示出本实用新型的优选实施例的半导体封装的制造方法的制造工序流程截面图。
图5为示出根据钝化层的厚度的焊球的应力程度的模拟结果。
图6为示出在固定半导体封装的整体厚度的状态下调整钝化层和半导体芯片的厚度的情况下的根据钝化层的厚度的焊球的应力程度的模拟结果。
图7为示出在本实用新型中根据钝化层的厚度施加到焊球的应力程度的图表。
图8至图10分别为本实用新型的另一实施例的半导体封装的部分截面结构图。
图11为本实用新型的另一实施例的半导体封装的截面结构图。
符号说明
10：半导体芯片
20：树脂涂膜
30：重新布线层
40：钝化层
50：金属层
60：焊球
70：印刷电路板
80：环氧模塑料
具体实施方式
下面，参照附图对本实用新型的半导体封装进行详细说明。
本实用新型的多个实施例是为了更加完整地向本实用新型所属技术领域的普通技术人员说明本实用新型而提供的，以下的实施例能够变形为多种不同的形态，本实用新型的范围并不局限于以下的实施例。相反，这些实施例为了使本实用新型变得更加充实和完整，并向本实用新型所属技术领域的普通技术人员完整地传递本实用新型的思想而提供。
本说明书所使用的术语仅为了说明特定实施例而使用，并不具有限定本实用新型的意图。如本说明书所述，只要在文脉上没有意味着明确的其他含义，单数的表示包括复数的表示。并且，本说明书所使用的“包括(comprise)”和/或“包含(comprising)”等术语是为了指定所记载的形状、数字、步骤、动作、部件、要素和/或它们的组合，而不是预先排除一个以上的其他形状、数字、动作、部件、要素和/或它们的组合的存在或附加可能性。如在本说明书中的使用，术语“和/或”包括所例举的相应的项目中的一种及一种以上的所有组合。
要理解的是，尽管在本说明书中使用了“第一”、“第二”、“第三”等术语来描述各种元件、组件、区域、层和/或部分，但这些元件、组件、区域、层和/或部分不应该受这些术语限制。这些术语并不指代特定的顺序、等级或优越，并且仅用于将一个元件、组件、区域、层和/或部分与另一元件、组件、区域、层和/或部分区分开。因此，在不脱离本实用新型的教导的情况下，下面讨论的第一元件、组件、区域、层和/或部分可以被称用第二元件、组件、区域、层和/或部分。
下面，参照示意性示出本实用新型的实施例的附图说明本实用新型的实施例。例如，在附图中，可以根据制造技术和/或公差对示出的形状进行变形。因此，本实用新型的示例性实施例并不局限于本说明书中示出的某些形状，并且可以包括在制造过程中引起的形状变型。
图2为本实用新型的优选实施例的半导体封装的截面结构图，图3为图2的主要部分的详细截面图。
分别参照图2和图3，本实用新型的优选实施例的半导体封装包括：半导体芯片10；树脂涂膜20，位于上述半导体芯片10的上部；重新布线层30，位于上述树脂涂膜20的上部且通过树脂涂膜20的开口区域与上述半导体芯片10的电极接触；钝化层40，位于除了上述重新布线层30的中心部分的周边区域的一部分和上述树脂涂膜20的上部全面，通过将热量吸收和分散来减少应力；金属层50，通过上述钝化层40的开口与上述重新布线层30接触且形成台阶；焊球60，布置在上述金属层50的上部，上述焊球60的中心部分位于上述金属层50的台阶低的区域，上述焊球60的周边部分位于金属层50的台阶高的区域；及印刷电路板70，平行布置在上述半导体芯片10的上部侧，使得电极与上述焊球60接触。
下面，对如上所述构成的本实用新型的优选实施例的半导体封装的构成和作用进行更详细的说明，且通过图4a至图4c的制造工序流程截面图详细说明制造方法。
如图4a所示，准备半导体芯片10。上述半导体芯片10为晶圆级芯片，其厚度根据基于特性、用途等的工序差异而不同。通常，半导体芯片10的厚度范围在250至368μm内。
在上述半导体芯片10的上部形成树脂涂膜20。在上述树脂涂膜20通过蚀刻工序形成有至少两个上下开口，且通过开口暴露半导体芯片10的电极部。
树脂涂膜20可以通过如旋涂法等的涂覆方法形成，并且可以通过光刻工艺形成开口。与半导体芯片10的厚度无关地，树脂涂膜20的厚度形成为10μm。
其次，通过沉积并图案化金属来形成与暴露的上述半导体芯片10的电极部分接触的重新布线层30。
由于形成在半导体芯片10上的电极部分的面积非常小，因此通过使用重新布线层30来扩展该面积以便于与外部接触。此时，为了扩展面积，可以改变用于与外部接触的电极的位置。
重新布线层30的厚度形成为6μm。
其次，如图4b所示，钝化层40形成在上述重新布线层30和树脂涂膜20的上部。上述钝化层40可以采用已知的绝缘膜、环氧树脂膜(SUEX)等。
上述钝化层40的厚度设定为下面将描述的焊球的直径的7.5至50％的厚度。也就是说，在焊球的直径为200μm时，上述钝化层40的厚度优选形成为15至100μm。
钝化层40将在半导体芯片10产生的热量吸收并分散在大面积上，从而起到减小作用在焊球60上的应力的作用。当厚度小于7.5％(15μm)时，吸热率相对较小，应力降低效果甚微。当厚度大于50％(100μm)时，半导体封装的厚度增加，导致制造工艺难度增加。
通过去除上述钝化层40的一部分来暴露下部的重新布线层30的上部中心的一部分，然后通过沉积并图案化金属来形成与重新布线层30接触的金属层50。此时，金属层50的厚度设定为9μm。
在通过去除上述钝化层40的一部分来暴露下部的重新布线层30时，在暴露重新布线层30的位置和剩下的钝化层40的上面产生台阶。该台阶的高度相同于钝化层40的厚度。
如上所述，在形成台阶的状态下形成金属层50时，在金属层50与重新布线层30相接的区域和位于钝化层40的上部的位置之间形成台阶。
其次，如图4c所示，在形成与上述金属层50接触的焊球60之后，将印刷电路板70的电极加热并焊接于焊球60。
如上所述，具有15至100μm的厚度的钝化层40可以通过将在半导体芯片10产生的热量吸收和分散来缓冲热冲击，以减少施加到焊球60的应力。
并且，若使钝化层40的厚度相对较大，则可以将印刷电路板70和半导体芯片10之间的距离保持更远，从而在热传导过程中的温度偏差减小，可以减小施加到焊球60的应力。
图5为示出根据钝化层40的厚度的焊球60的应力程度的模拟结果。
图5的(a)部分为在钝化层40形成为具有40μm的厚度时的模拟结果，图5的(b)部分为在钝化层40形成为具有70μm的厚度时的模拟结果，图5的(c)部分为在钝化层40形成为具有100μm的厚度时的焊球60的应力模拟结果。
如上所述，随着钝化层40的厚度增加，可以减小作用在焊球60上的应力。然而，若将钝化层40的厚度增加至大于100μm的范围，则如上所述制造工艺变得困难，并且半导体封装的厚度增加。
图6为在固定半导体封装的整体厚度的状态下调节钝化层40和半导体芯片10的厚度时的根据钝化层40的厚度的焊球60的应力程度的模拟结果。
将半导体封装的整体厚度固定为600μm(0.6mm)，并且与钝化层40的增加的厚度对应地减少半导体芯片10的厚度。通过抛光制造半导体芯片10的基板的背面等来可以充分地调节晶片级的半导体芯片10的厚度。
此时，如图5的实例所示，可知根据钝化层40的厚度增加而施加到焊球60的应力减少。
图7为示出根据钝化层40的厚度施加到焊球60的应力(Mpa)程度的图表。
在图7中，non fix示出如图5所示的实例仅调节钝化层40的厚度而不调节半导体芯片10的厚度的实例，而fix示出如图6所示调节半导体芯片10和钝化层40的厚度的实例。
半导体芯片10的厚度越小且钝化层40的厚度越大，施加到焊球60的应力的减少效果越大。
当半导体封装的厚度未固定到0.6mm的状态(图5的状态)下钝化层40的厚度分别为40μm、70μm及100μm时，施加到焊球60的应力减少至约18000Mpa、16000Mpa及15000Mpa，这并不是在焊球60产生裂缝的程度的强应力，而在将半导体封装的厚度固定为0.6mm的状态(图6的状态)下钝化层40的厚度分别为40μm、70μm及100μm时，施加到焊球60的应力逐渐减少。
尤其，当钝化层40的厚度为100μm时，应力减少至14000Mpa，这表示与不固定半导体封装的厚度的状态相比，更减少约1000Mpa的特征。
在不固定半导体封装的厚度的状态下，若钝化层40的厚度与以往相同地为10μm，则与施加到焊球60的应力相比，每个界面的应力总和数值减少24％。此时，界面为图5的A、B、C。
并且，可以确认，在固定半导体封装的厚度的状态下，每个界面的应力总和数值减少29％。
如上所述，可以通过调节钝化层40的厚度来减少施加到焊球60的应力，由此可以防止在焊球60发生裂缝。
再参照图3，在本实用新型中，通过将钝化层40形成为相对厚以能够减小由于热量引起的应力并使物理结构进一步稳定化。
与焊球60接触的金属层50通过形成钝化层40而形成有高度为15至100μm的台阶，而在位于其上部的焊球60的中心部分的高度h1和周边部分的高度h2之间发生差异。
换句话说，焊球60的下部侧外围与由上述钝化层40和金属层50形成的台阶境界面31相接并受到支撑，以呈现物理上更稳定的结构。
图8为本实用新型的另一实施例的半导体封装的部分截面结构图。
如图8所示，在本实用新型中，钝化层40可以形成为包括第一钝化层41和第二钝化层42的多层结构。
此时，第一钝化层41可以以10μm的厚度形成在树脂涂膜20的上部整体，而第二钝化层42可以以能够在金属层50形成台阶的程度仅形成在上述第一钝化层41的上部。
上述第二钝化层42的厚度设定为5至90μm。
如上所述的结构可以通过增加钝化层40的表面积来使热量顺利排放到与印刷电路板70之间的空间。
并且，可以期待通过台阶面支撑焊球60的下部外围的物理结构的效果。
图9为本实用新型的另一实施例的半导体封装的部分截面结构图。
参照图9，在上面参照图3说明的结构中以包围上述焊球60的周边部分的方式进一步形成环氧模塑料(EMC，Epoxy Molding Compound)80的结构。
通过形成环氧树脂模塑料80，可以更有效地吸收热量和散热，并且可以更稳定地物理地支撑焊球60。
此时，环氧模塑料80的厚度形成为60μm。
如图10所示，环氧模塑料80也可以应用于如图8所示的实施例中。
图11为本实用新型的另一实施例的半导体封装的部分截面结构图。
在上述实施例中说明了将钝化层40形成为与以往相比更厚，即，将钝化层40的厚度形成为15至100μm，从而将在半导体芯片10产生的热量吸收和分散的实例。
参照图11，优选地，将树脂涂膜20的厚度设定为焊球60的直径的7.5至50％的厚度。也就是说，当焊球60的直径为200μm时，将上述厚度增加至15至100μm来可以吸收和分散在半导体芯片10产生的热量。此时，树脂涂膜可以具有单层或多层结构。
当增加上述树脂涂膜20的厚度时，可以将在操作时发生热量的半导体芯片10和印刷电路板70之间的距离保持为更远，从而，在热量的传导过程中，温度偏差减少，以能够降低施加到焊球60的应力。
为了使用与以往相比更厚的树脂涂膜20，在设置于上述半导体芯片10的芯片垫11上电连接重新布线层30的插头32的高度增加。
并且，在参照图11描述的本实用新型的另一实施例中可以应用在上面说明的实施例的特征结构。例如，可以在钝化层40上形成支撑焊球60的侧面的环氧模塑料80。
而且，可以通过与树脂涂膜20的增加的厚度对应地抛光半导体芯片10的背面来使整个半导体封装的厚度恒定。
如上所述，在本实用新型中，可以通过调节钝化层40或树脂涂膜20的厚度来用作热缓冲层，且通过使用热缓冲层来减少热量的吸收和分散、传导过程的温度偏差，以能够防止在焊球60发生裂缝。
本实用新型不限于上面的实施例，而且对本实用新型所属领域的技术人员显而易见的是，可在不偏离本实用新型的技术精神的情况下实施各种修改和改变。

Claims (7)

1.一种半导体封装，其为使用焊球来电连接半导体芯片和印刷电路板的半导体封装，上述半导体封装的特征在于，还包括热缓冲层，上述热缓冲层位于上述半导体芯片的上部并将在半导体芯片产生的热量吸收和分散，上述热缓冲层通过增加上述半导体芯片和上述印刷电路板之间的间隔来减少热传导过程的偏差并具有上述焊球直径的7.5至50％的厚度。
2.根据权利要求1所述的半导体封装，其特征在于，
热缓冲层为与半导体芯片的一面相接的树脂涂膜或形成在树脂涂膜上的钝化层。
3.根据权利要求2所述的半导体封装，其特征在于，
上述热缓冲层的厚度为15至100μm。
4.根据权利要求3所述的半导体封装，其特征在于，
上述钝化层具有多层结构，多层结构的最底层位于树脂涂膜的整个上部，且安置有上述焊球的金属层呈阶梯状位于多层结构的最高层的一部分。
5.根据权利要求4所述的半导体封装，其特征在于，
上述金属层包括作为与重新布线层接触的区域的台阶低的区域、位于上述钝化层的上部的台阶高的区域及连接上述台阶低的区域和上述台阶高的区域的台阶面，
上述焊球的中心部分位于台阶低的区域，上述焊球的周边部分位于台阶高的区域。
6.根据权利要求3所述的半导体封装，其特征在于，
上述热缓冲层的厚度和上述半导体芯片的厚度被调整，使得半导体封装的整体厚度恒定。
7.根据权利要求2所述的半导体封装，其特征在于，
在上述热缓冲层的上部还包括环氧模塑料，上述环氧模塑料支撑上述焊球的侧面部。
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