CN209297772U - A kind of room temperature coating single side single side disappears shadow super thick ITO conductive film - Google Patents
A kind of room temperature coating single side single side disappears shadow super thick ITO conductive film Download PDFInfo
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- CN209297772U CN209297772U CN201920094811.0U CN201920094811U CN209297772U CN 209297772 U CN209297772 U CN 209297772U CN 201920094811 U CN201920094811 U CN 201920094811U CN 209297772 U CN209297772 U CN 209297772U
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Abstract
Disappear shadow super thick ITO conductive film the utility model discloses a kind of room temperature coating single side single side, belong to photoelectric glass technical field, including TG substrate, it is plated on the first layer niobium pentaoxide film of TG upper surface of base plate, it is plated on the first layer silicon dioxide film of first layer niobium pentaoxide film upper surface, it is plated on the second layer niobium pentaoxide film of first layer silicon dioxide film upper surface, the second layer silicon dioxide film for being plated on second layer niobium pentaoxide film upper surface and the ITO conductive layer for being plated on second layer silicon dioxide film upper surface, wherein, niobium pentaoxide film and silicon dioxide film are spaced apart composition and disappear shadow layer, and, the thickness of ITO conductive layer is greater than the thickness for the shadow layer that disappears and is less than 2 times of the shadow thickness degree that disappears, niobium pentaoxide film and silicon dioxide film are spaced apart the refractive index for forming the shadow layer that disappears and glass surface is close, disappear shadow layer and the I TO conductive film cooperates the difference in reflection that ensure that ITO conductive film etching front and back less than 0.5%, and then can realize the shadow that disappears completely of super thick ITO conductive film at normal temperature.
Description
Technical field
Disappear shadow super thick the utility model relates to photoelectric glass technical field more particularly to a kind of room temperature coating single side single side
ITO conductive film.
Background technique
ITO conductive film, i.e. tin indium oxide (Indium-Tin Oxide) transparent conducting film glass, multi-pass cross ITO conductive film
Glass production line, using planar cathode magnetic control sputtering plating technology, sputters oxygen in the power house environment of high purification on ultra-thin glass
The high-tech product changing indium tin conductive film coating and being obtained through the high temperature anneal.ITO electropane is widely used for liquid
Crystal display (LCD), solar battery, microelectronics ITO electropane, photoelectron and various optical fields.
The major parameter of ITO conductive film has: surface square resistance, the uniformity of sheet resistance, light transmittance, reflectivity, erosion
Carve front and back reflectivity difference (disappear shadow characteristic), thermal stability, acidproof alkaline stability, damage resistant (resistance to post-production) etc..Wherein light
Transmitance is mainly related with base material used in ito film and ito film thickness.In the identical situation of base material, ito film
Sheet resistance is smaller, and the thickness of ito film layer is bigger, and light transmission rate has a degree of reduction accordingly.
The structure of existing ITO conductive film are as follows: Glass/BM/ITO tin indium oxide, wherein BM is insulating protective layer, and ITO is to lead
Electric layer, this structure is after being etched into pattern, and since the reflection differences of etching front and back are larger, ITO electrode line is seen very bright
It is aobvious, influence the appearance of touch screen.Under visible light, since the transmitance of entire film layer is relatively low, only 88% or so, if electric
The lower words of resistance value, transmitance can also be lower, and it is high to lead to reflectivity, therefore under visible light, etched pattern clearly, is used in
It will have a direct impact on the display effect of display screen on display screen.
ITO conductive film in prior art is realized on high temperature coating wire, is led although realizing on high temperature coating wire
Plated film difficulty when the ITO plated film of electric glass is smaller, and still, equipment used by high temperature coating wire is expensive, and high temperature plated film
Temperature is relatively difficult to control in the process, causes final plated film success rate lower.Moreover, realizing general thickness at normal temperature
During ITO conductive film, it is difficult to realize the shadow that disappears, for thicker ITO conductive film, due to its thickness and absorption and film layer
The variation of ingredient, etching front and back difference in reflection can be bigger, and when etching can generate in heavier shadow namely prior art not
In the presence of the ITO conductive film of the thicker room temperature sputter for the shadow that disappears completely.In other words, the ITO used at present more than 50 nanometers is conductive
Film does not do the shadow processing that disappears substantially, can be used only in place of the special circumstances without the shadow requirement that disappears.Room temperature plates ito film, plates with high temperature
ITO is compared, and square resistance is higher, so just generally carrying out for the electric conductivity maintained like and plating thicker ITO to realize height
Electric conductivity as warm plated film.Because thickness is big, thus compared with high temperature plated film, shadow is difficult to eliminate.
Summary of the invention
The utility model provides a kind of room temperature coating single side single side and disappears shadow super thick ITO conductive film, it is intended to solve prior art
In ITO conductive film present in technological deficiency.
Specific technical solution provided by the utility model is as follows:
A kind of room temperature coating single side single side provided by the utility model shadow super thick ITO conductive film that disappears includes TG substrate, is plated on
The first layer niobium pentaoxide film of the TG upper surface of base plate, the first layer for being plated on the first layer niobium pentaoxide film upper surface
Silicon dioxide film, is plated on the second layer at the second layer niobium pentaoxide film for being plated on first layer silicon dioxide film upper surface
The second layer silicon dioxide film of niobium pentaoxide film upper surface and the ITO for being plated on second layer silicon dioxide film upper surface are conductive
Layer, wherein niobium pentaoxide film and silicon dioxide film are spaced apart composition and disappear shadow layer, also, the thickness of the ITO conductive layer is big
In the shadow layer that disappears thickness and be less than 2 times of the shadow thickness degree that disappears.
Optionally, the thickness of the second layer niobium pentaoxide film is greater than the thickness of the first layer niobium pentaoxide film,
The thickness of the first layer silicon dioxide film is greater than the thickness of the second layer silicon dioxide film.
Optionally, the first layer niobium pentaoxide film with a thickness of 5.9 nanometers, the thickness of the first layer silicon dioxide film
Degree be 42.0 nanometers, the second layer niobium pentaoxide film with a thickness of 14.9 nanometers, the thickness of the second layer silicon dioxide film
Degree be 22.4 nanometers, the ITO conductive layer with a thickness of 141.7 nanometers.
Optionally, the TG substrate with a thickness of 0.7 millimeter, the ITO conductive film forms coating single side list at normal temperature
Face shadow eliminating structure.
The beneficial effects of the utility model are as follows:
The utility model embodiment provide a kind of room temperature coating single side single side disappear shadow super thick ITO conductive film include TG substrate,
It is plated on the first layer niobium pentaoxide film of TG upper surface of base plate, is plated on the first layer dioxy of first layer niobium pentaoxide film upper surface
SiClx film, is plated on second layer niobium pentaoxide film at the second layer niobium pentaoxide film for being plated on first layer silicon dioxide film upper surface
The second layer silicon dioxide film of upper surface and the ITO conductive layer for being plated on second layer silicon dioxide film upper surface, wherein five oxidations two
Niobium film and silicon dioxide film are spaced apart composition and disappear shadow layer, also, the thickness of ITO conductive layer is greater than the thickness of the shadow layer that disappears and small
In 2 times of the shadow thickness degree that disappears, the ITO conductive film thicker to thickness may be implemented using the shadow layer that disappears and carry out the shadow that disappears, wherein five oxygen
Change two niobium films and silicon dioxide film be spaced apart composition disappear the refractive index of shadow layer and the thicknesses of layers of ITO and refractive index it is close,
Disappear shadow layer and the ITO conductive film cooperate the difference in reflection that ensure that ITO conductive film etching front and back less than 0.5%, and then can be
In disappear completely shadow namely the prior art for realizing super thick ITO conductive film under room temperature, disappear shadow difficulty of room temperature plating ITO is high, super thick ITO
The shadow difficulty that disappears is bigger, and the application cooperates by adjusting the thickness of niobium pentaoxide film and silica coating and forms the shadow that disappears
Layer can effectively eliminate super thick ITO etching shadow.
Detailed description of the invention
It, below will be to required in embodiment description in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing to be used is briefly described, it should be apparent that, the accompanying drawings in the following description is only some realities of the utility model
Example is applied, it for those of ordinary skill in the art, without creative efforts, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is that a kind of the disappear structure of shadow super thick ITO conductive film of room temperature coating single side single side of the utility model embodiment is shown
It is intended to；
Fig. 2 disappears for a kind of room temperature coating single side single side of the utility model embodiment before and after shadow super thick ITO conductive film etching
Reflectivity curve schematic diagram.
Specific embodiment
It is practical to this below in conjunction with attached drawing in order to keep the purpose of this utility model, technical solution and advantage clearer
It is novel to be described in further detail, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work
Under the premise of all other embodiment obtained, fall within the protection scope of the utility model.
Disappear shadow super thick ITO below in conjunction with a kind of room temperature coating single side single side of Fig. 1 ~ Fig. 2 to the utility model embodiment
Conductive film is described in detail.
With reference to shown in Fig. 1, Fig. 2, a kind of room temperature coating single side single side provided by the embodiment of the utility model disappears shadow super thick ITO
Conductive film includes TG substrate 1, the first layer niobium pentaoxide film 2 for being plated on 1 upper surface of TG substrate, is plated on first layer niobium pentaoxide
The first layer silicon dioxide film 3 of 2 upper surface of film, the second layer niobium pentaoxide film for being plated on 3 upper surface of first layer silicon dioxide film
4, it is plated on the second layer silicon dioxide film 5 of 4 upper surface of second layer niobium pentaoxide film and is plated on table on second layer silicon dioxide film 5
The ITO conductive layer 6 in face, wherein niobium pentaoxide film and silicon dioxide film are spaced apart composition and disappear shadow layer, also, ITO conductive layer
6 thickness is greater than the thickness for the shadow layer that disappears and less than 2 times of the shadow thickness degree that disappears, and may be implemented using the shadow layer that disappears thicker to thickness
ITO conductive film carries out the shadow that disappears, wherein disappears shadow layer refering to what is shown in Fig. 2, niobium pentaoxide film and silicon dioxide film are spaced apart composition
Refractive index and glass surface it is close, this disappear shadow layer and ITO conductive film cooperate it is anti-before and after ensure that ITO conductive film etching
Difference is penetrated less than 0.5%, and then can realize the shadow that disappears completely of super thick ITO conductive film at normal temperature.
Further, refering to what is shown in Fig. 1, the thickness of second layer niobium pentaoxide film 4 is greater than first layer niobium pentaoxide film 2
Thickness, the thickness of first layer silicon dioxide film 3 is greater than the thickness of second layer silicon dioxide film 5.Specifically, first layer five aoxidizes
Two niobium films 2 with a thickness of 5.9 nanometers, first layer silicon dioxide film 3 with a thickness of 42.0 nanometers, second layer niobium pentaoxide film 4
With a thickness of 14.9 nanometers, second layer silicon dioxide film 5 with a thickness of 22.4 nanometers, ITO conductive layer 6 is received with a thickness of 141.7
Rice.Refering to what is shown in Fig. 1, TG substrate 1 with a thickness of 0.7 millimeter, the ITO conductive film of the utility model embodiment is formed at normal temperature
Coating single side single side shadow eliminating structure.
A kind of room temperature coating single side single side of the utility model embodiment disappear shadow super thick ITO conductive film use the shadow layer that disappears be
Applicant pays the technical solution obtained after huge creative work, wherein the shadow layer that disappears includes spaced five oxygen
Change two niobium films and silicon dioxide film, particularly, first layer niobium pentaoxide film 2 with a thickness of 5.9 nanometers, first layer titanium dioxide
Silicon fiml 3 with a thickness of 42.0 nanometers, second layer niobium pentaoxide film 4 with a thickness of 14.9 nanometers, second layer silicon dioxide film 5
With a thickness of 22.4 nanometers, the reflectivity curve of the ITO conductive film etching front and back of the shadow layer that disappears of this kind of structure and composition as shown in Fig. 2,
It ensure that ITO conductive film etches the difference in reflection of front and back less than 0.5%, and then can realize the complete of super thick ITO conductive film at normal temperature
It totally disappeared shadow.
The utility model embodiment provide a kind of room temperature coating single side single side disappear shadow super thick ITO conductive film include TG substrate,
It is plated on the first layer niobium pentaoxide film of TG upper surface of base plate, is plated on the first layer dioxy of first layer niobium pentaoxide film upper surface
SiClx film, is plated on second layer niobium pentaoxide film at the second layer niobium pentaoxide film for being plated on first layer silicon dioxide film upper surface
The second layer silicon dioxide film of upper surface and the ITO conductive layer for being plated on second layer silicon dioxide film upper surface, wherein five oxidations two
Niobium film and silicon dioxide film are spaced apart composition and disappear shadow layer, also, the thickness of ITO conductive layer is greater than the thickness of the shadow layer that disappears and small
In 2 times of the shadow thickness degree that disappears, the ITO conductive film thicker to thickness may be implemented using the shadow layer that disappears and carry out the shadow that disappears, wherein five oxygen
Change two niobium films and silicon dioxide film be spaced apart composition disappear the refractive index of shadow layer and the thicknesses of layers of ITO and refractive index it is close,
Disappear shadow layer and the ITO conductive film cooperate the difference in reflection that ensure that ITO conductive film etching front and back less than 0.5%, and then can be
In disappear completely shadow namely the prior art for realizing super thick ITO conductive film under room temperature, disappear shadow difficulty of room temperature plating ITO is high, super thick ITO
The shadow difficulty that disappears is bigger, and the application cooperates by adjusting the thickness of niobium pentaoxide film and silica coating and forms the shadow that disappears
Layer can effectively eliminate super thick ITO etching shadow.
Obviously, those skilled in the art the utility model embodiment can be carried out various modification and variations without departing from
The spirit and scope of the utility model embodiment.In this way, if these modifications and variations of the utility model embodiment belong to this
Within the scope of utility model claims and its equivalent technologies, then the utility model is also intended to encompass these modification and variations and exists
It is interior.
Claims (4)
- The shadow super thick ITO conductive film 1. a kind of room temperature coating single side single side disappears, which is characterized in that the ITO conductive film includes TG base Plate, is plated on the first layer niobium pentaoxide film upper surface at the first layer niobium pentaoxide film for being plated on the TG upper surface of base plate First layer silicon dioxide film, be plated on first layer silicon dioxide film upper surface second layer niobium pentaoxide film, be plated on institute It states the second layer silicon dioxide film of second layer niobium pentaoxide film upper surface and is plated on second layer silicon dioxide film upper surface ITO conductive layer, wherein niobium pentaoxide film and silicon dioxide film are spaced apart composition and disappear shadow layer, also, the ITO is conductive The thickness of layer is greater than the thickness of the shadow layer that disappears and is less than 2 times of the shadow thickness degree that disappears.
- 2. ITO conductive film according to claim 1, which is characterized in that the thickness of the second layer niobium pentaoxide film is big It is greater than the second layer titanium dioxide in the thickness of the thickness of the first layer niobium pentaoxide film, the first layer silicon dioxide film The thickness of silicon fiml.
- 3. ITO conductive film according to claim 1, which is characterized in that the first layer niobium pentaoxide film with a thickness of 5.9 nanometers, the first layer silicon dioxide film with a thickness of 42.0 nanometers, the second layer niobium pentaoxide film with a thickness of 14.9 nanometers, the second layer silicon dioxide film with a thickness of 22.4 nanometers, the ITO conductive layer with a thickness of 141.7 nanometers.
- 4. ITO conductive film according to claim 3, which is characterized in that the TG substrate with a thickness of 0.7 millimeter, it is described ITO conductive film forms coating single side single side shadow eliminating structure at normal temperature.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920094811.0U CN209297772U (en) | 2019-01-21 | 2019-01-21 | A kind of room temperature coating single side single side disappears shadow super thick ITO conductive film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920094811.0U CN209297772U (en) | 2019-01-21 | 2019-01-21 | A kind of room temperature coating single side single side disappears shadow super thick ITO conductive film |
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| CN209297772U true CN209297772U (en) | 2019-08-23 |
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| CN201920094811.0U Active CN209297772U (en) | 2019-01-21 | 2019-01-21 | A kind of room temperature coating single side single side disappears shadow super thick ITO conductive film |
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