CN212694855U

CN212694855U - Low-impedance metal conductive film for large screen

Info

Publication number: CN212694855U
Application number: CN202020911725.7U
Authority: CN
Inventors: 胡业新; 吕敬波; 于佩强; 高毓康
Original assignee: Jiangsu Rijiu Optoelectronics Joint Stock Co ltd
Current assignee: Jiangsu Rijiu Optoelectronics Joint Stock Co ltd
Priority date: 2020-05-26
Filing date: 2020-05-26
Publication date: 2021-03-12
Anticipated expiration: 2030-05-26

Abstract

The utility model provides a low impedance metal conducting film for large screen, include the substrate layer, plate through magnetron sputtering technology metal silicon layer, metal functional layer, blackening layer, the upper protective layer on the low refraction face of substrate layer set up the lower protective layer on the substrate layer another side, do before the metal functional layer, do the one deck earlier metal silicon layer is bottomed as the tie coat, makes metal functional layer and substrate laminating are inseparabler, the metal functional layer passes through the indirect bonding of metal silicon layer is in on the substrate layer, reduce the phenomenon of droing, improve etching back adhesive force simultaneously, and make metal functional layer and substrate bonding are inseparabler, avoid etching back adhesive force bad broken string, and the light trap also reduces simultaneously, is applicable to the large screen and uses.

Description

Low-impedance metal conductive film for large screen

Technical Field

The utility model relates to a low impedance metal conducting film is used to large screen.

Background

In the prior art, an ITO conductive film is also used as a low-impedance metal conductive film for a large screen, and is a high-technology product obtained by sputtering an indium tin oxide conductive film coating on ultrathin glass by using a planar cathode magnetron sputtering technology and performing high-temperature annealing treatment. ITO conductive film glasses are widely used in liquid crystal displays, solar cells, microelectronic ITO conductive film glasses, optoelectronics, and various optical fields.

The main parameters of the ITO conductive film are as follows: surface square resistance, surface resistance uniformity, light transmittance, reflectivity difference before and after etching, thermal stability, acid and alkali stability, scratch resistance and the like. Wherein the light transmittance is mainly related to the base material used for the ITO film and the thickness of the ITO film. Under the condition that the substrate materials are the same, the smaller the surface resistance of the ITO film is, the larger the thickness of the ITO film layer is, and the light transmittance is correspondingly reduced to a certain degree.

The structure of the existing ITO conductive film is as follows: the structure is characterized in that the PET/IM/ITO indium tin oxide, wherein IM is a shadow eliminating layer, ITO is a conductive layer, and the ITO electrode wires are very obvious in appearance due to a large reflection difference before and after etching after the structure is etched into patterns, so that the appearance of the touch screen is influenced. Under visible light, the transmittance of the whole film layer is low and is only about 88%, and if the resistance value is lower, the transmittance is also lower, so that the reflectivity is high, therefore, the etching pattern is very obvious under visible light, and the display effect of the display screen can be directly influenced when the etching pattern is used on the display screen.

Because the ITO coating of the ITO conductive film in the prior art is plated on PET with a lower protective layer and then etched into the touch circuit board, although the touch circuit board is also transparent, the reflection is larger than that of the surface of the PET due to the different refractive index of the ITO coating and the PET, and a heavier shadow is generated.

In the prior art, the coating is prepared by different priming coats (copper nickel, zirconium oxide and the like) or the coating of copper layer evaporation is directly carried out on a base material, so that the falling phenomenon can be caused, the adhesive force is not strong, and the copper layer and the base material are not tightly bonded, thereby causing the generation of light holes.

SUMMERY OF THE UTILITY MODEL

The utility model discloses the technical problem that needs to solve provides a low impedance metal conducting film for large screen.

In order to solve the technical problem, the utility model provides a technical scheme is: a low-impedance metal conductive film for a large screen comprises a substrate layer, a metal silicon layer, a metal functional layer, a blackening layer, an upper protective layer and a lower protective layer, wherein the metal silicon layer is plated on a low-refraction surface of the substrate layer through a magnetron sputtering process, and the lower protective layer is arranged on the other surface of the substrate layer.

In some embodiments, the material of the lower protective layer is PET.

In some embodiments, the substrate layer is made of PET, CPO, PIA or CUP, has a thickness of 50-200um, and has a light transmittance of 90% or more.

In certain embodiments, the metallic functional layer is a copper plated layer, an aluminum plated layer, or a titanium plated layer.

In some embodiments, the material of the upper protection layer is CPP.

In some embodiments, the substrate layer is made of PET and has a thickness of 50um, 100um, 125um or 188 um.

In some embodiments, the metallic functional layer is a copper plating layer having a thickness of 100nm to 2000 nm.

In some embodiments, the blackening layer is 10-20nm thick.

In some embodiments, the metal silicon layer has a thickness of 3 to 6 nm.

The scope of the present invention is not limited to the technical solutions formed by specific combinations of the above technical features, and other technical solutions formed by arbitrary combinations of the above technical features or equivalent features should be covered. For example, the above features and the technical features (but not limited to) having similar functions disclosed in the present application are mutually replaced to form the technical solution.

Because of the application of the technical scheme, compared with the prior art, the utility model has the following advantages: the utility model provides a pair of low impedance metal conducting film for large screen has improved the processing procedure yield, through the metallic silicon layer as the tie coat, makes copper layer and substrate closely laminate, and the adhesive force improves, reduces the obscission, avoids etching back bad broken string of adhesive force, and the light trap also reduces simultaneously.

Drawings

Fig. 1 is a schematic structural view of the present invention;

wherein: reference numeral 10 denotes a base material layer, 11 denotes a metal silicon layer, 12 denotes a metal functional layer, 13 denotes a blackening layer, 14 denotes an upper protective layer, and 15 denotes a lower protective layer.

Detailed Description

Example 1:

a low-impedance metal conductive film for a large screen comprises a PET lower protective layer 15, a PET substrate layer 10, a metal silicon layer 11 which is plated on a low-refraction surface of the substrate layer through a magnetron sputtering process and is 5nm thick, a metal functional layer 12, a blackening layer 13 and a CPP upper protective layer 14. The thickness of the PET substrate layer 10 is 125um, the light transmittance is 95%, the metal functional layer 12 is a copper-plated layer, the thickness is between 100nm and 2000nm, and the thickness is determined according to impedance requirements (different impedance thicknesses). The blackening layer 13 is a mixture layer of copper nitride and copper oxide plated by a magnetron sputtering process, and has a thickness of 15 nm. At the moment, the low-impedance metal conductive film for the large screen has better performance.

The preparation method comprises the following steps:

the method comprises the following steps: the lower protective layer 15 is attached to one surface of the substrate layer 10;

step two: the metal silicon layer 11 is plated on the other low-refraction surface of the substrate layer 10 through a magnetron sputtering process;

step three: the metal functional layer 12 is plated on the metal silicon layer 11 through a magnetron sputtering process;

step four: the blackening layer 13 is plated on the metal functional layer 12 through a magnetron sputtering process;

step five: and attaching the upper protective layer 14 on the blackening layer 13 to finish the manufacturing.

The following are the test data using different materials as the primer:

1. the adhesion force and the light holes of different materials as the bottoming are compared, and the metal silicon layer has better adhesion force and fewer light holes as the bottoming

2. Compared with metal silicon with different thicknesses, the metal silicon layer with the thickness of 3-5nm can keep better adhesive force for a long time and has fewer light holes when being used as a base

3. Different materials as bottoming electrical property test (wire break test)

When the copper nickel and the aluminum oxide are respectively used as the bottoming, the electric property test has no communication phenomenon, and when the metal silicon is used as the bottoming, the passing rate of the electric property test is better

Example 2:

the utility model provides a low impedance metal conducting film for large screen includes lower protective layer 15, substrate layer 10, plates through magnetron sputtering technology metal silicon layer 11, metal function layer 12, blackened layer 13, upper protective layer 14 on the low refraction face of substrate layer, the material of lower protective layer 15 is PET, the material of substrate layer 10 is COP, thickness is 100um, the luminousness is 93%, metal silicon layer 11's thickness is 4nm, metal function layer 12 is the aluminized layer, thickness is between 100nm-2000nm, it is different according to impedance needs and decide (different impedance thickness), blackened layer 13 is for plating the mixture layer of the copper nitride that establishes and copper oxide through magnetron sputtering technology, thickness is 16nm, upper protective layer 14's material is CPP.

The preparation method comprises the following steps:

The above-mentioned embodiments are only for illustrating the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention, which should not be construed as limiting the scope of the present invention. All modifications made according to the spirit of the main technical scheme of the present invention shall be covered within the protection scope of the present invention.

Claims

1. The low-impedance metal conductive film for the large screen is characterized by comprising a base material layer (10), a metal silicon layer (11) plated on a low-refraction surface of the base material layer through a magnetron sputtering process, a metal functional layer (12), a blackening layer (13), an upper protective layer (14) and a lower protective layer (15) arranged on the other surface of the base material layer.

2. The low impedance metal conductive film for large screen of claim 1, wherein the material of the substrate layer (10) is PET, COP, PI or PC, the thickness is 50-200um, and the light transmittance is above 90%.

3. The low impedance metal conducting film for large screen according to claim 1, wherein said metal functional layer (12) is a copper plating layer, an aluminum plating layer or a titanium plating layer.

4. The low impedance metal conducting film for large screen of claim 1, wherein the material of said upper protection layer (14) is CPP.

5. The low impedance metal conducting film for large screen of claim 1, wherein the material of said lower protective layer (15) is PET.

6. The low impedance metal conductive film for the large screen of claim 1, wherein the material of the substrate layer (10) is PET, and the thickness is 50um, 100um, 125um or 188 um.

7. The low impedance metal conducting film for large screen according to claim 6, wherein said metal functional layer (12) is a copper plating layer with a thickness of 100nm to 2000 nm.

8. The low impedance metal conducting film for large screen of claim 7, wherein said blackened layer (13) has a thickness of 10-20 nm.

9. The low impedance metal conducting film for large screen of claim 8, wherein the thickness of said metal silicon layer (11) is 3-6 nm.