CN209297773U - A kind of room temperature coating single side single side disappears shadow ITO conductive film - Google Patents
A kind of room temperature coating single side single side disappears shadow ITO conductive film Download PDFInfo
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- CN209297773U CN209297773U CN201920094813.XU CN201920094813U CN209297773U CN 209297773 U CN209297773 U CN 209297773U CN 201920094813 U CN201920094813 U CN 201920094813U CN 209297773 U CN209297773 U CN 209297773U
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Abstract
Disappear shadow ITO conductive film the utility model discloses a kind of room temperature coating single side single side, belong to photoelectric glass technical field, including TG substrate, it is plated on the niobium pentaoxide film of TG upper surface of base plate respectively, the silicon dioxide film for being plated on niobium pentaoxide film upper surface and the ITO conductive layer for being plated on silicon dioxide film upper surface, wherein, the thickness of silicon dioxide film is greater than 8 times of niobium pentaoxide film thickness and is less than 10 times of niobium pentaoxide film thickness, the thickness of ITO conductive layer is greater than 3 times of niobium pentaoxide film thickness and is less than 4 times of niobium pentaoxide film thickness, due to the shadow layer that disappears of niobium pentaoxide film and silicon dioxide film composition under the above-mentioned thickness cooperation of use, it may be implemented to form coating single side single side shadow eliminating structure under room temperature on TG substrate, ITO conductive film needs are avoided to realize on high temperature coating wire, letter Change the plated film difficulty of ITO conductive film, and improves the plated film success rate of ITO conductive film, meanwhile, solve the problems, such as that low temperature plating ITO disappears shadow.
Description
Technical field
The utility model relates to photoelectric glass technical field more particularly to a kind of room temperature coating single side single side the shadow ITO that disappears to lead
Electrolemma.
Background technique
ITO conductive film, i.e. tin indium oxide (Indium-Tin Oxide) transparent conducting film glass, multi-pass cross ITO conductive film
Glass production line, using planar cathode magnetic control sputtering plating technology, sputters oxygen in the power house environment of high purification on ultra-thin glass
The high-tech product changing indium tin conductive film coating and being obtained through the high temperature anneal.ITO electropane is widely used for liquid
Crystal display (LCD), solar battery, microelectronics ITO electropane, photoelectron and various optical fields.
The major parameter of ITO conductive film has: surface square resistance, the uniformity of sheet resistance, light transmittance, reflectivity, erosion
Carve front and back reflectivity difference (disappear shadow characteristic), thermal stability, acidproof alkaline stability, damage resistant (resistance to post-production) etc..Wherein light
Transmitance is mainly related with base material used in ito film and ito film thickness.In the identical situation of base material, ito film
Sheet resistance is smaller, and the thickness of ito film layer is bigger, and light transmission rate has a degree of reduction accordingly.
The structure of existing ITO conductive film are as follows: Glass/BM/ITO tin indium oxide, wherein BM is insulating protective layer, and ITO is to lead
Electric layer, this structure is after being etched into pattern, and since the reflection differences of etching front and back are larger, ITO electrode line is seen very bright
It is aobvious, influence the appearance of touch screen.Under visible light, since the transmitance of entire film layer is relatively low, only 88% or so, if electric
The lower words of resistance value, transmitance can also be lower, and it is high to lead to reflectivity, therefore under visible light, etched pattern clearly, is used in
It will have a direct impact on the display effect of display screen on display screen.
ITO conductive film in prior art is realized on high temperature coating wire, is led although realizing on high temperature coating wire
Plated film difficulty when the ITO plated film of electric glass is smaller, and still, equipment used by high temperature coating wire is expensive, and high temperature plated film
Temperature is relatively difficult to control in the process, causes final plated film success rate lower.
Summary of the invention
The utility model provides a kind of room temperature coating single side single side and disappears shadow ITO conductive film, it is intended to solve in prior art
Technological deficiency present in ITO conductive film.
Specific technical solution provided by the utility model is as follows:
A kind of room temperature coating single side single side provided by the utility model disappear shadow ITO conductive film include TG substrate, be plated on it is described
The niobium pentaoxide film of TG upper surface of base plate, the silicon dioxide film for being plated on niobium pentaoxide film upper surface and it is plated on described two
The ITO conductive layer of silicon oxide film upper surface, wherein the thickness of the silicon dioxide film is greater than the niobium pentaoxide film thickness
8 times and it is less than 10 times of the niobium pentaoxide film thickness, the thickness of the ITO conductive layer is greater than the niobium pentaoxide film thickness
3 times of degree and it is less than 4 times of the niobium pentaoxide film thickness, and the ITO conductive film forms coating single side list at normal temperature
Face shadow eliminating structure.
Optionally, the ITO conductive layer with a thickness of 21.4 nanometers, the niobium pentaoxide film thickness be 6.2 nanometers, institute
State silicon dioxide film with a thickness of 59.6 nanometers.
The beneficial effects of the utility model are as follows:
It includes TG substrate, respectively that the utility model embodiment, which provides a kind of room temperature coating single side single side shadow ITO conductive film that disappears,
It is plated on the niobium pentaoxide film of TG upper surface of base plate, the silicon dioxide film of niobium pentaoxide film upper surface is plated on and is plated on titanium dioxide
The ITO conductive layer of silicon fiml upper surface, wherein the thickness of silicon dioxide film is greater than 8 times of niobium pentaoxide film thickness and less than five
10 times of two niobium film thicknesses are aoxidized, the thickness of ITO conductive layer is greater than 3 times of niobium pentaoxide film thickness and is less than niobium pentaoxide
4 times of film thickness, the refractive index of niobium pentaoxide film are far longer than the refractive index of silicon dioxide film, so niobium pentaoxide film and
Silicon dioxide film, which cooperates, forms the shadow layer that disappears, before which ensure that ITO conductive film etching with ITO conductive layer mutual cooperation
Difference in reflection afterwards less than 0.5%, also, due to the above-mentioned thickness of use cooperation under niobium pentaoxide film and silicon dioxide film group
At the shadow layer that disappears, may be implemented on TG substrate to form coating single side single side shadow eliminating structure under room temperature, avoid ITO conductive film needs
It is realized on high temperature coating wire, simplifies the plated film difficulty of ITO conductive film, and improve the plated film success rate of ITO conductive film.
Detailed description of the invention
It, below will be to required in embodiment description in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing to be used is briefly described, it should be apparent that, the accompanying drawings in the following description is only some realities of the utility model
Example is applied, it for those of ordinary skill in the art, without creative efforts, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is that a kind of room temperature coating single side single side of the utility model embodiment disappears the structural schematic diagram of shadow ITO conductive film；
Fig. 2 be the utility model embodiment a kind of room temperature coating single side single side disappear shadow ITO conductive film etching front and back it is anti-
Penetrate curve synoptic diagram.
Specific embodiment
It is practical to this below in conjunction with attached drawing in order to keep the purpose of this utility model, technical solution and advantage clearer
It is novel to be described in further detail, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work
Under the premise of all other embodiment obtained, fall within the protection scope of the utility model.
It is conductive below in conjunction with a kind of disappear shadow ITO of room temperature coating single side single side of Fig. 1 ~ Fig. 2 to the utility model embodiment
Film is described in detail.
With reference to shown in Fig. 1, Fig. 2, a kind of room temperature coating single side single side provided by the embodiment of the utility model shadow ITO that disappears is conductive
Film include TG substrate 1, be plated on respectively TG substrate 1 upper surface niobium pentaoxide film 2, be plated on 2 upper surface of niobium pentaoxide film
Silicon dioxide film 3 and be plated on the ITO conductive layer 4 of 3 upper surface of silicon dioxide film, wherein the thickness of silicon dioxide film 3 is greater than five
Aoxidize ten times of two niobium films, 2 thickness.Due to, the niobium pentaoxide contained in niobium pentaoxide film 2 is the refraction materials, and two
The silica contained in silicon oxide film 3 is low-index material, and then the two composition that cooperates disappears shadow layer, this disappear shadow layer with
ITO conductive layer, which cooperates, improves the difference in reflection of ITO conductive film etching front and back.Wherein, it sets the thickness of silicon dioxide film 3 to
Greater than 8 times of 2 thickness of niobium pentaoxide film and it is less than 10 times of niobium pentaoxide film thickness, moreover, refering to what is shown in Fig. 2, ITO is led
The thickness of electric layer 4 is greater than 3 times of 2 thickness of niobium pentaoxide film and less than 4 times of 2 thickness of niobium pentaoxide film, is arranged such not
It can only guarantee that ITO conductive film etches the difference in reflection of front and back less than 0.5%, and due to five under the cooperation of the above-mentioned thickness of use
The shadow layer that disappears for aoxidizing two niobium films and silicon dioxide film composition, may be implemented on TG substrate to form coating single side single side under room temperature and disappears
Shadow structure avoids ITO conductive film needs from realizing on high temperature coating wire, simplifies the plated film difficulty of ITO conductive film, and improve
The plated film success rate of ITO conductive film.
Specifically, refering to what is shown in Fig. 1, being provided with niobium pentaoxide film 2,3 and of silicon dioxide film in the unilateral side of TG substrate 1
ITO conductive layer 4 namely niobium pentaoxide film 2, silicon dioxide film 3 and ITO conductive layer 4 are only distributed only over the unilateral side of TG substrate 1,
And then the ITO conductive film of the utility model embodiment forms coating single side single side shadow eliminating structure, can satisfy the list of ITO conductive film
The film-coated single-faced shadow effect that disappears in face.
Further, refering to what is shown in Fig. 1, ITO conductive layer 4 with a thickness of 21.4 nanometers, niobium pentaoxide film 2 with a thickness of
6.2 nanometers, silicon dioxide film 3 with a thickness of 59.6 nanometers, through a large amount of experiments have shown that, the niobium pentaoxide film under the thickness
2, the shadow effect that disappears that silicon dioxide film 3 and ITO conductive layer 4 are matched after the ITO conductive film being combined into etches is best, also, the thickness
Niobium pentaoxide film 2, silicon dioxide film 3 and ITO conductive layer 4 under degree, which match the shadow layer that disappears being combined into, may be implemented on TG substrate
Coating single side single side shadow eliminating structure is formed under room temperature, is avoided ITO conductive film needs from realizing on high temperature coating wire, is simplified ITO
The plated film difficulty of conductive film, and improve the plated film success rate of ITO conductive film.
Obviously, those skilled in the art the utility model embodiment can be carried out various modification and variations without departing from
The spirit and scope of the utility model embodiment.In this way, if these modifications and variations of the utility model embodiment belong to this
Within the scope of utility model claims and its equivalent technologies, then the utility model is also intended to encompass these modification and variations and exists
It is interior.
Claims (2)
- The shadow ITO conductive film 1. a kind of room temperature coating single side single side disappears, which is characterized in that the ITO conductive film includes TG substrate, plating In the TG upper surface of base plate niobium pentaoxide film, be plated on the silicon dioxide film of niobium pentaoxide film upper surface and be plated on The ITO conductive layer of the silicon dioxide film upper surface, wherein the thickness of the silicon dioxide film is greater than the niobium pentaoxide film 8 times of thickness and it is less than 10 times of the niobium pentaoxide film thickness, the thickness of the ITO conductive layer is greater than five oxidation two 3 times of niobium film thickness and it is less than 4 times of the niobium pentaoxide film thickness, and the ITO conductive film forms single side at normal temperature Film-coated single-faced shadow eliminating structure.
- 2. ITO conductive film according to claim 1, which is characterized in that the ITO conductive layer with a thickness of 21.4 nanometers, The niobium pentaoxide film thickness be 6.2 nanometers, the silicon dioxide film with a thickness of 59.6 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920094813.XU CN209297773U (en) | 2019-01-21 | 2019-01-21 | A kind of room temperature coating single side single side disappears shadow ITO conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920094813.XU CN209297773U (en) | 2019-01-21 | 2019-01-21 | A kind of room temperature coating single side single side disappears shadow ITO conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209297773U true CN209297773U (en) | 2019-08-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920094813.XU Active CN209297773U (en) | 2019-01-21 | 2019-01-21 | A kind of room temperature coating single side single side disappears shadow ITO conductive film |
Country Status (1)
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| CN (1) | CN209297773U (en) |
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2019
- 2019-01-21 CN CN201920094813.XU patent/CN209297773U/en active Active
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