CN218647648U

CN218647648U - Double-sided ITO copper conductive film

Info

Publication number: CN218647648U
Application number: CN202223102371.XU
Authority: CN
Inventors: 张子键; 张爱国; 薛中; 刘凯; 刘凯华; 栗佳星
Original assignee: Jiaozuo Song Yang Photoelectric Technology Co ltd
Current assignee: Jiaozuo Song Yang Photoelectric Technology Co ltd
Priority date: 2022-11-22
Filing date: 2022-11-22
Publication date: 2023-03-17
Anticipated expiration: 2032-11-22

Abstract

The utility model discloses a double-sided ITO copper conductive film, which comprises a PET carrier film, wherein the upper end surface of the PET carrier film is provided with a first optical high-folding layer, the upper end surface of the first optical high-folding layer is magnetically controlled to sputter a first optical low-folding layer, the upper end surface of the first optical low-folding layer is magnetically controlled to sputter a first ITO conductive layer, and the upper end surface of the first ITO conductive layer is magnetically controlled to sputter a first copper conductive layer; and a second optical high-folding layer is arranged on the lower end face of the PET carrier film, a second optical low-folding layer is coated on the lower end face of the second optical high-folding layer in a magnetic control sputtering manner, a second ITO conductive layer is coated on the lower end face of the second optical low-folding layer in a magnetic control sputtering manner, and a second copper conductive layer is coated on the lower end face of the second ITO conductive layer in a magnetic control sputtering manner. The utility model has lower and more uniform resistance value and more sensitive reaction; after circuits are etched on the front side and the back side, the transmittance of the light source transmitting material is high, and the display is clearer; the film can be better combined with other film layers for manufacturing the display screen when the display screen is manufactured.

Description

Double-sided ITO copper conductive film

Technical Field

The utility model relates to a touch-sensitive screen field, especially a two-sided ITO copper conducting film.

Background

In the prior art, an ITO conductive film is also used as a low-impedance metal conductive film for a large screen, and is a high-technology product obtained by sputtering an indium tin oxide conductive film coating on ultrathin glass by using a planar cathode magnetron sputtering technology and performing high-temperature annealing treatment. ITO conductive film glasses are widely used in liquid crystal displays, solar cells, microelectronic ITO conductive film glasses, optoelectronics, and various optical fields.

The main parameters of the ITO conductive film are as follows: surface square resistance, surface resistance uniformity, light transmittance, reflectivity difference before and after etching, thermal stability, acid and alkali stability, scratch resistance and the like. Wherein the light transmittance is mainly related to the base material used for the ITO film and the thickness of the ITO film. Under the condition that the substrate material is the same, the smaller the surface resistance of the ITO film is, the larger the thickness of the ITO film layer is, and the light transmittance can be correspondingly reduced to a certain degree.

The existing ITO conductive film only has an ITO conductive layer on one surface, and only the ITO conductive layer has no copper conductive layer, and the resistance value of the copper conductive layer is lower than that of the ITO conductive layer, so the reaction sensitivity of the ITO conductive layer is lower than that of the copper conductive layer; if the copper conducting layer is simply added, the transmittance is influenced, and the display effect of the finally manufactured display screen is influenced to be better.

Disclosure of Invention

The utility model discloses a solve not enough that exist among the prior art, provide a two-sided ITO copper conducting film.

In order to achieve the purpose, the utility model is implemented according to the following technical scheme:

a double-sided ITO copper conductive film comprises a PET carrier film, wherein a first optical high-folding layer is arranged on the upper end face of the PET carrier film, a first optical low-folding layer is plated on the upper end face of the first optical high-folding layer in a magnetic control sputtering mode, a first ITO conductive layer is plated on the upper end face of the first optical low-folding layer in a magnetic control sputtering mode, and a first copper conductive layer is plated on the upper end face of the first ITO conductive layer in a magnetic control sputtering mode; the lower end face of the PET carrier film is provided with a second optical high-folding layer, the lower end face of the second optical high-folding layer is plated with a second optical low-folding layer in a magnetic control sputtering mode, the lower end face of the second optical low-folding layer is plated with a second ITO conducting layer in a magnetic control sputtering mode, and the lower end face of the second ITO conducting layer is plated with a second copper conducting layer in a magnetic control sputtering mode.

Further, the first optical high-folding layer and the second optical high-folding layer are polystyrene coatings, and the thicknesses of the first optical high-folding layer and the second optical high-folding layer are both 30-40 nanometers.

Further, the first optical low-refraction layer and the second optical low-refraction layer are silicon oxide coatings, and the thicknesses of the first optical low-refraction layer and the second optical low-refraction layer are both 15-25 nanometers.

Furthermore, the transmittance of the first optical low-refraction layer and the transmittance of the second optical low-refraction layer are greater than 93%.

Furthermore, the transmittance of the first optical high-folding layer and the transmittance of the second optical high-folding layer are greater than 90%.

The thickness of the first ITO conducting layer and the thickness of the second ITO conducting layer are both 20-30 nanometers.

The thickness of the first copper conducting layer and the second copper conducting layer is 280-310 nanometers.

Compared with the prior art, the utility model is provided with two ITO conductive layers and copper conductive layers outside the two ITO conductive layers, so that the resistance of the whole double-sided ITO copper conductive film is lower and more uniform, and the reaction is more sensitive; in addition, a first optical high-folding layer and a second optical high-folding layer with the transmittance of more than 90 percent and a first optical low-folding layer and a second optical low-folding layer with the transmittance of more than 93 percent are arranged between the two ITO conductive layers, and the light source transmission material has high transmittance after circuits are etched on the front side and the back side in the visible light, so that the display is clearer; moreover, the layers of the double-sided ITO copper conductive film of the utility model are tightly combined, so that the plating layer is not easy to fall off to cause wire breakage when the thin circuit is made; the surface tension of the copper-plated conductive layers on the front and back surfaces is high, and the copper-plated conductive layers are easy to adhere to each other, so that the copper-plated conductive layers can be better combined with other film layers for manufacturing a display screen when the display screen is manufactured.

Drawings

Fig. 1 is a schematic structural diagram of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings and embodiments. The specific embodiments described herein are merely illustrative of the invention and do not limit the invention.

As shown in fig. 1, the present embodiment provides a double-sided ITO copper conductive film, including a PET carrier film 1, a first optical high-refractive layer 2 is disposed on an upper end surface of the PET carrier film 1, a first optical low-refractive layer 3 is magnetically sputtered on an upper end surface of the first optical high-refractive layer 2, a first ITO conductive layer 4 is magnetically sputtered on an upper end surface of the first optical low-refractive layer 3, and a first copper conductive layer 5 is magnetically sputtered on an upper end surface of the first ITO conductive layer 4; a second optical high-folding layer 6 is arranged on the lower end face of the PET carrier film 1, a second optical low-folding layer 7 is magnetically sputtered on the lower end face of the second optical high-folding layer 6, a second ITO conducting layer 8 is magnetically sputtered on the lower end face of the second optical low-folding layer 7, and a second copper conducting layer 9 is magnetically sputtered on the lower end face of the second ITO conducting layer 8.

In this embodiment, the first optical high-refractive layer 2 and the second optical high-refractive layer 6 are polystyrene coatings, the thicknesses of the first optical high-refractive layer and the second optical high-refractive layer are 30 to 40 nanometers, and the transmittances of the first optical high-refractive layer 2 and the second optical high-refractive layer 6 are greater than 90%.

In this embodiment, the first optical low-refractive layer 3 and the second optical low-refractive layer 7 are silicon oxide coatings, and the thicknesses of the first optical low-refractive layer 3 and the second optical low-refractive layer 7 are 15 to 25 nm; the transmittances of the first optical low-folded layer 3 and the second optical low-folded layer 7 are more than 93%.

The process comprises the following steps:

1. a, B surface is plated with optical high-folding layer and ITO conductive layer

After coating a first optical high-folding layer 2 and a second optical high-folding layer 6 on two sides of A, B of a PET carrier film, filling a proper amount of argon and oxygen into a silicon rotating target of a magnetron sputtering device under the high vacuum state of 10-7Torr, wherein the flow of the filled argon is 500sccm, and the flow of the filled oxygen is 200sccm; applying high-voltage direct current of 20A and 460V to ionize argon and oxygen into argon ions and oxygen ions, enabling the argon ions to impact a silicon target in an accelerating manner, sputtering silicon ions, combining the silicon ions and the oxygen ions to generate silicon oxide, and enabling the silicon oxide to be sputtered on the upper end face and the lower end face of a PET carrier film 1 in an accelerating manner in an electric field to form a first optical low-folded layer 3 and a second optical low-folded layer 7; filling a proper amount of argon and oxygen into an ITO rotating target of the magnetron sputtering device, wherein the flow of the argon is 150sccm, and the flow of the oxygen is 20sccm; applying high-voltage direct current of 20A and 460V to ionize argon and oxygen into argon ions and oxygen ions, enabling the argon ions to impact an ITO target in an accelerating manner, sputtering ITO ions, combining the ITO ions and the oxygen ions in an electric field and sputtering the ITO ions and the oxygen ions on the first optical low-folded layer 3 and the second optical low-folded layer 7 in an accelerating manner to form a first ITO conducting layer 4 and a second ITO conducting layer 8;

2. high temperature baking

Putting the A, B conductive films with the plated two surfaces into a roll-to-roll baking furnace with the set temperature of 150 ℃ for high-temperature baking for 60 minutes to crystallize the plated ITO conductive layer at high temperature to achieve stable property;

3. a, B surface pure copper plating conductive layer

Filling argon with the flow of 500sccm into a copper rotating target of magnetron sputtering equipment in a high vacuum state of 10-7Torr after crystallization; applying high-voltage direct current of 20A and 460V to ionize argon into argon ions, accelerating to impact a pure copper target material, and sputtering copper ions; copper ions are accelerated and sputtered on the first ITO conductive layer 4 and the second ITO conductive layer 8 in an electric field to form a first copper conductive layer 5 and a second copper conductive layer 9 with the thickness of about 300 nanometers respectively.

Further, the double-sided ITO copper conductive film prepared above was subjected to optical detection, impedance and linearity detection, and physical property detection, respectively, by a conventional method in the art, and its performance parameters are specifically shown in tables 1, 2, 3, and 4.

TABLE 1

TABLE 2

TABLE 3

TABLE 4

As can be seen from table 1, the prepared double-sided ITO copper conductive film is provided with the first optical high-folding layer with the transmittance of more than 90%, the second optical high-folding layer, the first optical low-folding layer with the transmittance of more than 93%, and the second optical low-folding layer, under visible light, the transmittance of the light source transmission material is high after the front and back surfaces are etched, the display is clearer, and therefore, the display effect of the display screen using the double-sided ITO copper conductive film is better.

As can be seen from tables 2 and 3, the resistances of the front and back surfaces of the double-sided ITO copper conductive film are uniform, and the current is more stable when a certain voltage is applied to the circuit after the circuit is subsequently etched.

As can be seen from table 4, the cross section test ASTM rating is up to 5B, i.e., the edge of the cut is completely smooth, and the edge of the grid does not peel off, and the first copper conductive layer 5, the first ITO conductive layer 4, the first optical low-fold layer 3, the first optical high-fold layer 2, the second optical high-fold layer 6, the second optical low-fold layer 7, the second ITO conductive layer 8, and the second copper conductive layer 9 on the prepared double-sided ITO copper conductive film are tightly bonded to the PET carrier film 1, so that the plating layer is not easy to fall off to cause wire breakage when making fine lines; the front and back surface dyne values of the prepared double-sided ITO copper conductive film reach 44dyn/cm, which shows that the front and back surfaces of the double-sided ITO copper conductive film are easy to adhere, so that the double-sided ITO copper conductive film can be better combined with other film layers for manufacturing a display screen when the display screen is manufactured.

The technical scheme of the utility model is not limited to the restriction of above-mentioned specific embodiment, all according to the utility model discloses a technical scheme makes technical deformation, all falls into within the protection scope of the utility model.

Claims

1. A two-sided ITO copper conducting film, includes PET carrier film, its characterized in that: the upper end face of the PET carrier film is provided with a first optical high-folding layer, the upper end face of the first optical high-folding layer is plated with a first optical low-folding layer through magnetron sputtering, the upper end face of the first optical low-folding layer is plated with a first ITO conducting layer through magnetron sputtering, and the upper end face of the first ITO conducting layer is plated with a first copper conducting layer through magnetron sputtering; a second optical high-folding layer is arranged on the lower end face of the PET carrier film, a second optical low-folding layer is magnetically sputtered on the lower end face of the second optical high-folding layer, a second ITO conductive layer is magnetically sputtered on the lower end face of the second optical low-folding layer, and a second copper conductive layer is magnetically sputtered on the lower end face of the second ITO conductive layer.

2. The double-sided ITO copper conductive film according to claim 1, characterized in that: the first optical high-refraction layer and the second optical high-refraction layer are polystyrene coatings, and the thicknesses of the first optical high-refraction layer and the second optical high-refraction layer are both 30-40 nanometers.

3. The double-sided ITO copper conductive film according to claim 1, characterized in that: the first optical low-refraction layer and the second optical low-refraction layer are silicon oxide coatings, and the thicknesses of the first optical low-refraction layer and the second optical low-refraction layer are both 15-25 nanometers.

4. The double-sided ITO copper conductive film according to claim 1, characterized in that: the transmittance of the first optical low-refraction layer and the transmittance of the second optical low-refraction layer are greater than 93%.

5. The double-sided ITO copper conductive film according to claim 1, characterized in that: the transmittance of the first optical high-folding layer and the transmittance of the second optical high-folding layer are greater than 90%.

6. The double-sided ITO copper conductive film according to claim 1, characterized in that: the thickness of the first ITO conducting layer and the thickness of the second ITO conducting layer are both about 20-30 nanometers.

7. The double-sided ITO copper conductive film according to claim 1, characterized in that: the thickness of the first copper conducting layer and the second copper conducting layer is about 280-310 nanometers.