US20120207988A1 - Coated glass and method for making the same - Google Patents
Coated glass and method for making the same Download PDFInfo
- Publication number
- US20120207988A1 US20120207988A1 US13/170,935 US201113170935A US2012207988A1 US 20120207988 A1 US20120207988 A1 US 20120207988A1 US 201113170935 A US201113170935 A US 201113170935A US 2012207988 A1 US2012207988 A1 US 2012207988A1
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- United States
- Prior art keywords
- conductive layer
- coated glass
- layer
- substrate
- target
- Prior art date
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- 239000011521 glass Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 41
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910000410 antimony oxide Inorganic materials 0.000 claims abstract description 18
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims abstract description 18
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 18
- 239000011787 zinc oxide Substances 0.000 claims abstract description 18
- 239000011701 zinc Substances 0.000 claims description 19
- 229910052787 antimony Inorganic materials 0.000 claims description 16
- 229910052718 tin Inorganic materials 0.000 claims description 16
- 229910052725 zinc Inorganic materials 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 3
- 238000001704 evaporation Methods 0.000 claims 3
- 239000002184 metal Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000007789 gas Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000003574 free electron Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000005344 low-emissivity glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3642—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating containing a metal layer
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3655—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating containing at least one conducting layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
- C03C2217/944—Layers comprising zinc oxide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
- C03C2217/948—Layers comprising indium tin oxide [ITO]
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/31—Pre-treatment
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
- C09K2323/03—Viewing layer characterised by chemical composition
- C09K2323/033—Silicon compound, e.g. glass or organosilicon
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
- C09K2323/06—Substrate layer characterised by chemical composition
- C09K2323/061—Inorganic, e.g. ceramic, metallic or glass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
Definitions
- the present disclosure relates to coated glass, particularly to a coated glass having a high conductivity property and a method for making the coated glass.
- a glass sheet with a transparent conductive film formed thereon is used widely as a transparent conductor for a photovoltaic device such as a solar cell or the like and an image display device such as a liquid crystal display, a plasma display panel, or the like.
- the glass sheet with a transparent conductive film is used as low-emissivity glass (Low-E glass), or electromagnetic wave shielding glass.
- the transparent conductive film an indium tin oxide (ITO) film has been known.
- ITO indium tin oxide
- FIG. 1 illustrates a cross-sectional view of an exemplary embodiment of a coated glass.
- FIG. 2 is a schematic view of a magnetron sputtering coating machine for manufacturing the glass in FIG. 1 .
- FIG. 1 shows a coated glass 10 according to an exemplary embodiment.
- the coated glass 10 includes a substrate 11 , a first conductive layer 13 , a metallic layer 15 and a second conductive layer 17 .
- the substrate 11 is made of glass.
- the first conductive layer 13 is coated on the substrate 11 .
- the metallic layer 15 is coated on the first conductive layer 13 .
- the second conductive layer 17 is coated on the metal layer 15 .
- the first conductive layer 13 , the metallic layer 15 and the second conductive layer 17 can be provided by deposition techniques, such as sputtering deposition.
- the first conductive layer 13 and the second conductive layer 17 are transparent, and each has a thickness of about 200 nm to about 400 nm.
- the first conductive layer 13 may consist essentially of tin oxide, antimony oxide and zinc oxide.
- the first conductive layer 13 is consisted of tin oxide, antimony oxide and zinc oxide.
- Zinc oxide of the first conductive layer 13 has a mole percentage in a range from about 30% to about 50%.
- the antimony oxide of the first conductive layer 13 has a mole percentage in a range from about 1% to about 5%. The remaining is tin oxide.
- the composition and proportion of the second conductive layer 17 is the same as the first conductive layer 13 .
- the metallic layer 15 is sandwiched between the first conductive layer 13 and the second conductive layer 17 .
- the metal layer 15 has a thickness of about 10 nm to about 25 nm.
- the metal layer 15 is made of high conductivity and high reflectivity material.
- the metal layer 15 is made of silver (Ag) or alloy (Al).
- the coated glass 10 has a resistivity of about 2 ⁇ 10 ⁇ 3 ohm-metres ( ⁇ -m) to 5 ⁇ 10 ⁇ 3 ⁇ -m.
- the thickness of the first conductive layer 13 and the second conductive layer 17 may effectively secure a high light transmission rate.
- the coated glass 10 has a light transmission rate of about 85% to about 87.5%.
- a method for making the coated glass 10 may include the following steps:
- the substrate 11 is pretreated.
- the pre-treating process may include the following steps:
- the substrate 11 is cleaned in an ultrasonic cleaning device (not shown), which is filled with ethanol or acetone.
- the cleaning time is about 5 min to about 10 min.
- the substrate 11 is plasma cleaned. Referring to FIG. 2 , the substrate 11 is positioned in a plating chamber 21 of a vacuum sputtering machine 20 . The plating chamber is then evacuated to about 3.0 ⁇ 10 ⁇ 3 Pa to about 5.0 ⁇ 10 ⁇ 3 Pa. Argon (Ar) may be used as a working gas and be fed into the chamber 21 at a flow rate from about 200 to about 400 standard cubic centimeter per minute (sccm).
- the substrate 11 may be biased with negative bias voltage at a range of ⁇ 200 V to about ⁇ 300 V, then high-frequency voltage is produced in the plating chamber 21 and the Ar is ionized to plasma.
- the plasma then strikes the surface of the substrate 11 to clean the surface of the substrate 11 . Plasma cleaning the substrate 11 may take about 10 to about 20 minutes. The plasma cleaning process makes the substrate 11 form a coarse or rugged surface for enhance the bond between the substrate 11 and the layer on the substrate 11 .
- At least one target 23 is fixed in the plating chamber 21 .
- the target 23 is made of Sn powder, Sb powder, and Zn powder.
- the metal powers are mixed and are sintered to form the target 23 .
- the first conductive layer 13 is vacuum sputtered on the substrate 11 .
- the inside of the plating chamber 21 is heated from about 120° C. to about 200° C.
- Argon (Ar) as a working gas is fed into the chamber 21 at a flow rate of about 300 sccm.
- Oxygen (O 2 ) is used as reaction gas and is fed into the chamber at a flow rate of about 50 sccm to about 88 sccm.
- Power of about 5 kw to about 7 kw is now applied to the target 23 , and the substrate 11 may be biased with negative bias voltage of about ⁇ 100 V to about ⁇ 150 V to deposit the first conductive layer 12 on the substrate 11 .
- Depositing of the first conductive layer 13 may take from about 30 to about 50 minutes.
- the process of manufacturing the target 23 may include at least the following steps: mixing Sn, Sb, Zn powder to form a mixture.
- the Sn metal has an atomic percentage in a range from about 45% to about 65%.
- the Zn metal has an atomic percentage in a range from about 30% to about 45%.
- the Sb metal has an atomic percentage in a range from about 1% to about 5%.
- the mixture is pressed into a blank at a press force in a range from about 1.0 ⁇ 10 5 N to about 20 ⁇ 10 5 N.
- the blank is sintered at a temperature in the furnace from about 550° C. to about 650° C. from about 1.5 hours to about 3 hours.
- the metallic layer 15 is formed on the first conductive layer 13 by vacuum sputter deposition.
- At least one target 24 is provided.
- the target 24 is made of Ag or Al.
- Argon (Ar) as a working gas is fed into the chamber 21 at a flow rate of about 300 sccm. Power of about 2 kw to about 3 kw is now applied to the target 24 , and the substrate 11 may be biased with negative bias voltage to deposit the metallic layer 15 on the first conductive layer 12 .
- the negative bias voltage may be about ⁇ 100 V to about ⁇ 150 V.
- Depositing of the metal layer 15 may take about 30 to about 60 minutes.
- the metal layer 15 has a thickness of about 10 nm to about 25 nm.
- the second conductive layer 17 is formed on the metal layer 15 by vacuum sputter deposition.
- the target 23 is reopened.
- the inside of the plating chamber 21 is heated from about 120° C. to about 200° C.
- Argon (Ar) as a working gas is fed into the chamber 21 at a flow rate of about 300 sccm.
- Oxygen (O 2 ) is used as reaction gas, and is fed into the chamber, at a flow rate of about 50 sccm to about 88 sccm.
- the negative bias voltage may be about ⁇ 100 V to about ⁇ 150 V.
- Depositing of the second conductive layer 17 may take from about 30 to about 50 minutes.
- the above coated glass 10 may have a low resistivity since the metallic layer 15 is disposed between the first conductive layer 13 and the second conductive layer 17 . Since a plurality of free electrons is produced on the first conductive layer 13 and the second conductive layer 17 , this greatly increases the conductivity of the coated glass.
- the vacuum sputtering machine 20 is a medium frequency magnetron sputtering device (model No. SM-1100H) manufactured by South innovative Vacuum Technology Co., Ltd. located in Shenzhen, China.
- the substrate 11 is made of glass. Plasma cleaning the substrate 11 is with Ar at a flow rate of about 400 sccm. The substrate 11 is biased with ⁇ 300V negative bias voltage. Plasma cleaning the substrate 11 may take about 10 minutes.
- the first conductive layer 13 , the metallic layer 15 and the second conductive layer 17 are vacuum sputtered on the substrate 11 according to the parameters shown in TABLE 1.
- the coated glass 10 achieved from the first exemplary embodiment has a first conductive layer 13 and a second conductive layer 17 .
- Zinc oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 43% to about 44%.
- Antimony oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 4% to about 4.5%. The remaining is tin oxide.
- the coated glass 10 achieved from the first embodiment has a resistivity of about 3.78 ⁇ 10 ⁇ 3 ⁇ -m to 4 ⁇ 10 ⁇ 3 ⁇ -m.
- the coated glass 10 has a light transmission rate of about 85% to about 86%.
- the first conductive layer 13 , the metallic layer 15 and the second conductive layer 17 are vacuum sputtered on the substrate 11 according to the parameters shown in TABLE 2.
- Zinc oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 27% to about 28.5%.
- Antimony oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 4% to about 4.2%. The remaining is tin oxide.
- the coated glass 10 achieved from the first embodiment has a resistivity of about 1.98 ⁇ 10 ⁇ 3 ⁇ -m to 2.2 ⁇ 10 ⁇ 3 ⁇ -m.
- the coated glass 10 has a light transmission rate of about 86% to about 86.7%.
- the first conductive layer 13 , the metallic layer 15 and the second conductive layer 17 are vacuum sputtered on the substrate 11 according to the parameters shown in TABLE 3.
- Zinc oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 38% to about 39.3%.
- Antimony oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 4% to about 4.3%. The remaining is tin oxide.
- the coated glass 10 achieved from the first embodiment has a resistivity of about 2.3 ⁇ 10 ⁇ 3 ⁇ -m to 2.6 ⁇ 10 ⁇ 3 ⁇ -m.
- the coated glass 10 has a light transmission rate of about 86% to about 87%.
- the first conductive layer 13 , the metallic layer 15 and the second conductive layer 17 are vacuum sputtered on the substrate 11 according to the parameters shown in TABLE 4.
- Zinc oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 30% to about 32.8%.
- Antimony oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 1.5% to about 1.8%. The remaining is tin oxide.
- the coated glass 10 achieved from the first embodiment has a resistivity of about 2.87 ⁇ 10 ⁇ 3 ⁇ -m to 3.12 ⁇ 10 ⁇ 3 ⁇ -m.
- the coated glass 10 has a light transmission rate of about 85% to about 86%.
- the first conductive layer 13 , the metallic layer 15 and the second conductive layer 17 are vacuum sputtered on the substrate 11 according to the parameters shown in TABLE 5.
- Zinc oxide of the conductive layer 13 , 17 has a mole percentage in a range from about 37.5% to about 39%.
- Antimony oxide of the conductive layer 13 , 17 has a mole percentage in a range from about 2.5% to about 2.8%. The remaining is tin oxide.
- the coated glass 10 achieved from the first embodiment has a resistivity of about 4.4 ⁇ 10 ⁇ 3 ⁇ -m to 4.72 ⁇ 10 ⁇ 3 ⁇ -m.
- the coated glass 10 has a light transmission rate of about 87% to about 87.5%.
- the first conductive layer 13 , the metallic layer 15 and the second conductive layer 17 are vacuum sputtered on the substrate 11 according to the parameters shown in TABLE 6.
- Zinc oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 32% to about 33.1%.
- Antimony oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 0.7% to about 0.85%. The remaining is tin oxide.
- the coated glass 10 achieved from the first embodiment has a resistivity of about 4.8 ⁇ 10 ⁇ 3 ⁇ -m to 5.1 ⁇ 10 ⁇ 3 ⁇ -m.
- the coated glass 10 has a light transmission rate of about 86% to about 86.8%.
- the first conductive layer 13 , the metallic layer 15 and the second conductive layer 17 are vacuum sputtered on the substrate 11 according to the parameters shown in TABLE 7.
- Zinc oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 27.5% to about 29.3%.
- Antimony oxide of the first, second conductive layer 13 , 17 has a mole percentage in a range from about 4% to about 4.5%. The remaining is tin oxide.
- the coated glass 10 achieved from the first embodiment has a resistivity of about 4 ⁇ 10 ⁇ 3 ⁇ -m to 4.25 ⁇ 10 ⁇ 3 ⁇ -m.
- the coated glass 10 has a light transmission rate of about 86% to about 86.5%.
- the thickness of the first conductive layer 13 and the second conductive layer 17 may effectively secure a high light transmission rate.
Abstract
Description
- 1. Technical Field
- The present disclosure relates to coated glass, particularly to a coated glass having a high conductivity property and a method for making the coated glass.
- 2. Description of Related Art
- A glass sheet with a transparent conductive film formed thereon is used widely as a transparent conductor for a photovoltaic device such as a solar cell or the like and an image display device such as a liquid crystal display, a plasma display panel, or the like. For a building window, the glass sheet with a transparent conductive film is used as low-emissivity glass (Low-E glass), or electromagnetic wave shielding glass. As the transparent conductive film, an indium tin oxide (ITO) film has been known. However, since indium metal in use easily diffuse in the ITO film to affect conduct property, this causes ITO film to have unstable characteristics.
- Therefore, there is room for improvement within the art.
- Many aspects of the coated glass can be better understood with reference to the following figures. The components in the figures are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of the coated glass.
-
FIG. 1 illustrates a cross-sectional view of an exemplary embodiment of a coated glass. -
FIG. 2 is a schematic view of a magnetron sputtering coating machine for manufacturing the glass inFIG. 1 . -
FIG. 1 shows a coatedglass 10 according to an exemplary embodiment. The coatedglass 10 includes asubstrate 11, a firstconductive layer 13, ametallic layer 15 and a secondconductive layer 17. Thesubstrate 11 is made of glass. The firstconductive layer 13 is coated on thesubstrate 11. Themetallic layer 15 is coated on the firstconductive layer 13. The secondconductive layer 17 is coated on themetal layer 15. In this embodiment, the firstconductive layer 13, themetallic layer 15 and the secondconductive layer 17 can be provided by deposition techniques, such as sputtering deposition. The firstconductive layer 13 and the secondconductive layer 17 are transparent, and each has a thickness of about 200 nm to about 400 nm. The firstconductive layer 13 may consist essentially of tin oxide, antimony oxide and zinc oxide. In the exemplary embodiments, the firstconductive layer 13 is consisted of tin oxide, antimony oxide and zinc oxide. Zinc oxide of the firstconductive layer 13 has a mole percentage in a range from about 30% to about 50%. The antimony oxide of the firstconductive layer 13 has a mole percentage in a range from about 1% to about 5%. The remaining is tin oxide. The composition and proportion of the secondconductive layer 17 is the same as the firstconductive layer 13. - The
metallic layer 15 is sandwiched between the firstconductive layer 13 and the secondconductive layer 17. Themetal layer 15 has a thickness of about 10 nm to about 25 nm. Themetal layer 15 is made of high conductivity and high reflectivity material. In this exemplary embodiment, themetal layer 15 is made of silver (Ag) or alloy (Al). - In the coated glass, since some of ions of Sn4− and Zn2+ are replaced with the ions of Sb+3 and Sb+5 to produce a plurality of free electrons, this greatly increases the conductivity of the coated glass. The coated
glass 10 has a resistivity of about 2×10−3 ohm-metres (Ω-m) to 5×10−3 Ω-m. In addition, the thickness of the firstconductive layer 13 and the secondconductive layer 17 may effectively secure a high light transmission rate. The coatedglass 10 has a light transmission rate of about 85% to about 87.5%. - A method for making the coated
glass 10 may include the following steps: - The
substrate 11 is pretreated. The pre-treating process may include the following steps: - The
substrate 11 is cleaned in an ultrasonic cleaning device (not shown), which is filled with ethanol or acetone. The cleaning time is about 5 min to about 10 min. - The
substrate 11 is plasma cleaned. Referring toFIG. 2 , thesubstrate 11 is positioned in aplating chamber 21 of avacuum sputtering machine 20. The plating chamber is then evacuated to about 3.0×10−3 Pa to about 5.0×10−3 Pa. Argon (Ar) may be used as a working gas and be fed into thechamber 21 at a flow rate from about 200 to about 400 standard cubic centimeter per minute (sccm). Thesubstrate 11 may be biased with negative bias voltage at a range of −200 V to about −300 V, then high-frequency voltage is produced in theplating chamber 21 and the Ar is ionized to plasma. The plasma then strikes the surface of thesubstrate 11 to clean the surface of thesubstrate 11. Plasma cleaning thesubstrate 11 may take about 10 to about 20 minutes. The plasma cleaning process makes thesubstrate 11 form a coarse or rugged surface for enhance the bond between thesubstrate 11 and the layer on thesubstrate 11. - At least one
target 23 is fixed in theplating chamber 21. In this exemplary embodiment, thetarget 23 is made of Sn powder, Sb powder, and Zn powder. The metal powers are mixed and are sintered to form thetarget 23. - The first
conductive layer 13 is vacuum sputtered on thesubstrate 11. During the process, the inside of theplating chamber 21 is heated from about 120° C. to about 200° C. Argon (Ar) as a working gas is fed into thechamber 21 at a flow rate of about 300 sccm. Oxygen (O2) is used as reaction gas and is fed into the chamber at a flow rate of about 50 sccm to about 88 sccm. Power of about 5 kw to about 7 kw is now applied to thetarget 23, and thesubstrate 11 may be biased with negative bias voltage of about −100 V to about −150 V to deposit the first conductive layer 12 on thesubstrate 11. Depositing of the firstconductive layer 13 may take from about 30 to about 50 minutes. - In this exemplary embodiment, the process of manufacturing the
target 23 may include at least the following steps: mixing Sn, Sb, Zn powder to form a mixture. The Sn metal has an atomic percentage in a range from about 45% to about 65%. The Zn metal has an atomic percentage in a range from about 30% to about 45%. The Sb metal has an atomic percentage in a range from about 1% to about 5%. The mixture is pressed into a blank at a press force in a range from about 1.0×105N to about 20×105 N. The blank is sintered at a temperature in the furnace from about 550° C. to about 650° C. from about 1.5 hours to about 3 hours. - After the first
conductive layer 13 is formed on thesubstrate 11, themetallic layer 15 is formed on the firstconductive layer 13 by vacuum sputter deposition. First, at least onetarget 24 is provided. Thetarget 24 is made of Ag or Al. During the process, the inside of theplating chamber 21 is heated from about 100° C. to about 120° C. Argon (Ar) as a working gas is fed into thechamber 21 at a flow rate of about 300 sccm. Power of about 2 kw to about 3 kw is now applied to thetarget 24, and thesubstrate 11 may be biased with negative bias voltage to deposit themetallic layer 15 on the first conductive layer 12. The negative bias voltage may be about −100 V to about −150 V. Depositing of themetal layer 15 may take about 30 to about 60 minutes. Themetal layer 15 has a thickness of about 10 nm to about 25 nm. - After the
metal layer 15 is formed on the firstconductive layer 13, the secondconductive layer 17 is formed on themetal layer 15 by vacuum sputter deposition. Thetarget 23 is reopened. During the process, the inside of theplating chamber 21 is heated from about 120° C. to about 200° C. Argon (Ar) as a working gas is fed into thechamber 21 at a flow rate of about 300 sccm. Oxygen (O2) is used as reaction gas, and is fed into the chamber, at a flow rate of about 50 sccm to about 88 sccm. Power of about 5 kw to about 7 kw is now applied to thetarget 23, and thesubstrate 11 may be biased with negative bias voltage to deposit the secondconductive layer 17 on themetallic layer 15. The negative bias voltage may be about −100 V to about −150 V. Depositing of the secondconductive layer 17 may take from about 30 to about 50 minutes. - The above coated
glass 10 may have a low resistivity since themetallic layer 15 is disposed between the firstconductive layer 13 and the secondconductive layer 17. Since a plurality of free electrons is produced on the firstconductive layer 13 and the secondconductive layer 17, this greatly increases the conductivity of the coated glass. - The present disclosure is described further in detail using examples as follows, but is not limited by the following examples.
- All of the embodiments are finished by a
vacuum sputtering machine 20, and is plasma cleaned at the same parameter. Thevacuum sputtering machine 20 is a medium frequency magnetron sputtering device (model No. SM-1100H) manufactured by South Innovative Vacuum Technology Co., Ltd. located in Shenzhen, China. Thesubstrate 11 is made of glass. Plasma cleaning thesubstrate 11 is with Ar at a flow rate of about 400 sccm. Thesubstrate 11 is biased with −300V negative bias voltage. Plasma cleaning thesubstrate 11 may take about 10 minutes. - The first
conductive layer 13, themetallic layer 15 and the secondconductive layer 17 are vacuum sputtered on thesubstrate 11 according to the parameters shown in TABLE 1. Thecoated glass 10 achieved from the first exemplary embodiment has a firstconductive layer 13 and a secondconductive layer 17. Zinc oxide of the first, secondconductive layer conductive layer -
TABLE 1 Target bias (atomic Power voltage Ar O2 T Time Thickness Example I percentage) (kw) (V) (sccm) (sccm) (° C.) (minutes) (nm) First layer 50% Sn, 5 −150 300 60 150 35 328 13 5% Sb, 45% Zn metallic layer Ag 2.5 −100 300 — 100 30 15 15 second layer 50% Sn, 5 −150 300 60 150 35 330 17 5% Sb, 45% Zn - The
coated glass 10 achieved from the first embodiment has a resistivity of about 3.78×10−3 Ω-m to 4×10−3 Ω-m. Thecoated glass 10 has a light transmission rate of about 85% to about 86%. - The first
conductive layer 13, themetallic layer 15 and the secondconductive layer 17 are vacuum sputtered on thesubstrate 11 according to the parameters shown in TABLE 2. Zinc oxide of the first, secondconductive layer conductive layer -
TABLE 2 Target bias (atomic Power voltage Ar O2 T Time Thickness Example 2 percentage) (kw) (V) (sccm) (sccm) (° C.) (minutes) (nm) First layer 65% Sn, 5 −150 300 75 150 40 363 13 5% Sb, 30% Zn metallic layer Ag 2.5 −100 300 — 100 30 16 15 second layer 65% Sn, 5 −150 300 75 150 40 363 17 5% Sb, 30% Zn - The
coated glass 10 achieved from the first embodiment has a resistivity of about 1.98×10−3Ω-m to 2.2×10−3 Ω-m. Thecoated glass 10 has a light transmission rate of about 86% to about 86.7%. - The first
conductive layer 13, themetallic layer 15 and the secondconductive layer 17 are vacuum sputtered on thesubstrate 11 according to the parameters shown in TABLE 3. Zinc oxide of the first, secondconductive layer conductive layer -
TABLE 3 Target bias (atomic Power voltage Ar O2 T Time Thickness Example 3 percentage) (kw) (V) (sccm) (sccm) (° C.) (minutes) (nm) First layer 55% Sn, 6 −150 300 65 200 35 300 13 5% Sb, 40% Zn metallic layer Al 3 −100 300 — 100 30 17.5 15 second layer 55% Sn, 6 −150 300 65 200 35 305 17 5% Sb, 40% Zn - The
coated glass 10 achieved from the first embodiment has a resistivity of about 2.3 ×10−3 Ω-m to 2.6×10−3 Ω-m. Thecoated glass 10 has a light transmission rate of about 86% to about 87%. - The first
conductive layer 13, themetallic layer 15 and the secondconductive layer 17 are vacuum sputtered on thesubstrate 11 according to the parameters shown in TABLE 4. Zinc oxide of the first, secondconductive layer conductive layer -
TABLE 4 Target bias (atomic Power voltage Ar O2 T Time Thickness Example 4 percentage) (kw) (V) (sccm) (sccm) (° C.) (minutes) (nm) First layer 64% Sn, 5 −150 300 55 180 30 328 13 2% Sb, 34% Zn metallic layer Al 2.6 −100 300 — 100 30 16 15 second layer 64% Sn, 6 −150 300 55 150 30 326 17 2% Sb, 34% Zn - The
coated glass 10 achieved from the first embodiment has a resistivity of about 2.87×10−3 Ω-m to 3.12×10−3 Ω-m. Thecoated glass 10 has a light transmission rate of about 85% to about 86%. - The first
conductive layer 13, themetallic layer 15 and the secondconductive layer 17 are vacuum sputtered on thesubstrate 11 according to the parameters shown in TABLE 5. Zinc oxide of theconductive layer conductive layer -
TABLE 5 Target bias (atomic Power voltage Ar O2 T Time Thickness Example 5 percentage) (kw) (V) (sccm) (sccm) (° C.) (minutes) (nm) First layer 57% Sn, 5 −150 300 68 120 35 313 13 3% Sb, 40% Zn metallic layer Ag 2.8 −100 300 — 100 30 18.5 15 second layer 57% Sn, 5 −150 300 55 120 35 311 17 3% Sb, 40% Zn - The
coated glass 10 achieved from the first embodiment has a resistivity of about 4.4×10−3 Ω-m to 4.72×10−3 Ω-m. Thecoated glass 10 has a light transmission rate of about 87% to about 87.5%. - The first
conductive layer 13, themetallic layer 15 and the secondconductive layer 17 are vacuum sputtered on thesubstrate 11 according to the parameters shown in TABLE 6. Zinc oxide of the first, secondconductive layer conductive layer -
TABLE 6 Target bias (atomic Power voltage Ar O2 T Time Thickness Example 6 percentage) (kw) (V) (sccm) (sccm) (° C.) (minutes) (nm) First layer 65% Sn, 5 −150 300 80 150 40 328 13 1% Sb, 34% Zn metallic layer Al 2.5 −100 300 — 100 30 15.6 15 second layer 65% Sn, 5 −150 300 80 150 40 327 17 1% Sb, 34% Zn - The
coated glass 10 achieved from the first embodiment has a resistivity of about 4.8×10−3 Ω-m to 5.1×10−3 Ω-m. Thecoated glass 10 has a light transmission rate of about 86% to about 86.8%. - The first
conductive layer 13, themetallic layer 15 and the secondconductive layer 17 are vacuum sputtered on thesubstrate 11 according to the parameters shown in TABLE 7. Zinc oxide of the first, secondconductive layer conductive layer -
TABLE 7 Target bias (atomic Power voltage Ar O2 T Time Thickness Example 7 percentage) (kw) (V) (sccm) (sccm) (° C.) (minutes) (nm) First layer 65% Sn, 6 −150 300 85 180 40 361 13 5% Sb, 30% Zn metallic layer Ag 3 −100 300 — 100 30 16.7 15 second layer 65% Sn, 5 −150 300 85 180 40 363 17 5% Sb, 30% Zn - The
coated glass 10 achieved from the first embodiment has a resistivity of about 4×10−3 Ω-m to 4.25 ×10−3 Ω-m. Thecoated glass 10 has a light transmission rate of about 86% to about 86.5%. - In the coated glass, since some of ions of Sn4− and Zn2+ are replaced with the ions of Sb+3 and Sb+5 to produce a plurality of free electrons, this greatly increases the conductivity of the coated glass. In addition, the thickness of the first
conductive layer 13 and the secondconductive layer 17 may effectively secure a high light transmission rate. - It is believed that the exemplary embodiment and its advantages will be understood from the foregoing description, and it will be apparent that various changes may be made thereto without departing from the spirit and scope of the disclosure or sacrificing all of its advantages, the examples hereinbefore described merely being preferred or exemplary embodiment of the disclosure.
Claims (14)
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CN103938166A (en) * | 2013-01-23 | 2014-07-23 | 香港生产力促进局 | High-energy pulse-type magnetron sputtering method and magnetron sputtering device |
CN103981494A (en) * | 2013-02-12 | 2014-08-13 | 三星显示有限公司 | Deposition apparatus and method of manufacturing organic light emitting display apparatus using the same |
CN111876738A (en) * | 2020-07-25 | 2020-11-03 | 童玲 | Vacuum magnetron sputtering coating machine for preparing low-emissivity glass |
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CN105603373B (en) * | 2015-12-24 | 2018-11-16 | 中国电子科技集团公司第三十三研究所 | A method of improving shield glass ghz band electromagnet shield effect |
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US8409694B2 (en) | 2013-04-02 |
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