CN209119075U - 裸片切割及堆叠式装置结构 - Google Patents

裸片切割及堆叠式装置结构 Download PDF

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CN209119075U
CN209119075U CN201822115839.6U CN201822115839U CN209119075U CN 209119075 U CN209119075 U CN 209119075U CN 201822115839 U CN201822115839 U CN 201822115839U CN 209119075 U CN209119075 U CN 209119075U
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bare die
substrate
side wall
encapsulant
bare
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G·哈里哈兰
R·沙威尔
I·辛格
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Xilinx Inc
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Xilinx Inc
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Abstract

本申请描述了用于从相应工件切割裸片的技术，以及将一个或多个切割的裸片结合到堆叠式装置结构中的技术。在一些实施例中，从工件切割裸片包括在切割线中化学蚀刻工件。在一些实施例中，从工件切割裸片包括在切割线中机械切割工件并沿着裸片的侧壁形成衬垫。裸片可以被结合到堆叠式装置结构中。裸片可以沿着附接到基板上的另一裸片而附接到基板上。封装物可以位于每一个裸片和基板之间，并且横向地位于裸片之间。

Description

裸片切割及堆叠式装置结构
技术领域
本申请的实施例大致涉及裸片切割(die singulation)以及堆叠式装置结构，特别地，涉及从工件切割裸片的工艺，用于改进堆叠式装置结构中的特性。
背景技术
通常来说，半导体加工工业已普遍开发出堆叠技术，其中形成在裸片上的集成电路被堆叠到另一基板上。堆叠技术的示例包括被称为2.5维集成电路(2.5DIC)的技术，其中一个或多个裸片(每一裸片上均形成有集成电路)被堆叠在中介层(interposer)上。另一示例包括被称为3维集成电路(3DIC)的技术，其中一个或多个裸片(每一裸片上均形成有集成电路)被堆叠在另一裸片(其上亦形成有集成电路)上。在另一示例中，可以实现具有或不具有中介层的多级堆叠式裸片。
堆叠技术的益处为更高的密度、更小的占用面积、更短的电气布线(electricalrouting)和更低的功耗。例如，裸片的垂直集成可以减小将堆叠式裸片连接至封装基板的面积。此外，在某些情况下，电信号的传导路径可包括垂直于至另一裸片的连接的部分，这可以减小电信号传播的距离。所减小的距离可以减小电阻，并且反过来可以降低功耗和传播延迟。
实用新型内容
本申请的实施例大致涉及用于切割裸片的技术以及涉及包括切割的裸片的堆叠式装置结构。本申请描述的各种切割工艺可以改善堆叠式装置结构的鲁棒性和可靠性。
本申请的一个实施例为一种结构。所述结构包括基板、附接到所述基板的第一裸片以及位于所述第一裸片和所述基板之间的封装物。所述第一裸片具有第一侧壁，所述第一侧壁具有至少一个第一凹痕。所述封装物被设置在所述第一凹痕中，并被粘合到所述第一凹痕的第一表面。
本申请的另一实施例为一种集成电路封装的方法。所述方法包括从第一工件切割第一裸片、将所述第一裸片附接到基板的第一区域以及在所述基板上形成封装物。切割所述第一裸片包括在第一切割线中从所述第一工件化学移除材料。所述封装物被进一步形成在所述第一区域和所述第一裸片之间，并被粘合到所述第一裸片的第一侧壁。
本申请的另一实施例为一种结构。所述结构包括基板、附接到所述基板的第一裸片以及位于所述第一裸片和所述基板之间的封装物。所述第一裸片具有第一侧壁以及沿着所述第一侧壁的第一衬垫。所述封装物被粘合到所述第一衬垫。
本申请的另一实施例为一种集成电路封装的方法。所述方法包括从第一工件切割第一裸片、将所述第一裸片附接到基板的第一区域以及在所述基板上形成封装物。切割所述第一裸片包括在第一切割线中机械切割所述第一工件，并沿着所述第一裸片的第一侧壁形成第一衬垫。通过机械切割所述第一工件形成所述第一裸片的第一侧壁。所述封装物被进一步形成在所述第一区域和所述第一裸片之间。所述封装物被粘合到所述第一衬垫。
本申请的另一实施例为一种结构，所述结构包括：基板；第一裸片，所述第一裸片具有第一侧壁，所述第一侧壁具有至少一个第一凹痕，所述第一裸片被附接至所述基板；以及封装物，所述封装物位于所述第一裸片与所述基板之间，所述封装物被设置在所述第一凹痕中并被粘合到所述第一凹痕的第一表面。
在某些实施方式中，所述第一侧壁是波状侧壁，所述第一凹痕是所述波状侧壁的凹形表面。
在某些实施方式中，所述第一侧壁是具有一个或多个凹口的垂直侧壁，所述至少一个第一凹痕是所述一个或多个凹口。
在某些实施方式中，所述结构还包括第二裸片，所述第二裸片具有第二侧壁，所述第二侧壁具有至少一个第二凹痕，所述第二裸片被附接至所述基板，其中所述封装物还位于所述第二裸片与所述基板之间并且横向地位于所述第一侧壁与所述第二侧壁之间以及粘合至所述第一侧壁与所述第二侧壁，所述封装物还被设置在所述第二凹痕中并且粘合至所述第二凹痕的第二表面。
在某些实施方式中，所述第一侧壁是通过从工件切割所述第一裸片而形成，所述从工件切割所述第一裸片包括使用深反应离子蚀刻DRIE工艺。
在某些实施方式中，所述第一侧壁是通过从工件切割所述第一裸片而形成，所述从工件切割所述第一裸片包括使用各向异性蚀刻工艺以及随后的各向同性蚀刻工艺，其中至少一部分由所述各向异性蚀刻工艺形成的侧壁在所述各向同性蚀刻工艺期间被钝化。
在某些实施方式中，所述基板是具有集成电路的第二裸片，或者所述基板是中介层。
本申请的另一实施例为一种结构，所述结构包括：基板；第一裸片，所述第一裸片具有第一侧壁以及沿着所述第一侧壁的第一衬垫，所述第一裸片被附接至所述基板；以及封装物，所述封装物位于所述第一裸片和所述基板之间，所述封装物被粘合至所述第一衬垫。
在某些实施方式中，所述结构还包括第二裸片，所述第二裸片具有第二侧壁以及沿着所述第二侧壁的第二衬垫，所述第二裸片被附接至所述基板，其中所述封装物还位于所述第二裸片与所述基板之间，并且横向地位于所述第一裸片与所述第二裸片之间以及粘合至所述第二衬垫。
在某些实施方式中，所述第一衬垫是氮化物层。
在某些实施方式中，形成所述第一衬垫包括沿着所述第一侧壁沉积所述第一衬垫以及使用蚀刻工艺平滑所述第一衬垫。
在某些实施方式中，所述基板是具有集成电路的第二裸片，或者所述基板是中介层。
以上及其他方面可通过参考以下详细描述而被理解。
附图说明
可通过参考示例性实施方式而更详细地理解本申请的上述特征并获得本申请的更详细的描述，其中附图中描绘了部分示例性实施方式。然而应当注意，附图仅描述了典型的示例性实施方式并因此不应被视作限制本申请的范围，而本申请可能包含其他同等有效的实施例。
图1-图6为根据本申请的实施例处于用于形成堆叠式装置结构的一般工艺阶段的中间结构的横截面图；
图7为根据本申请的实施例用于形成堆叠式装置结构的一般工艺的流程图；
图8和图9为根据本申请的实施例处于第一裸片切割工艺阶段的中间结构的横截面图；
图10为根据本申请的实施例的第一裸片切割工艺的流程图；
图11为根据本申请的实施例的堆叠式装置结构的横截面图，其中堆叠式装置结构包括使用图8和图9的第一裸片切割工艺从工件切割的裸片；
图12-图17为根据本申请的实施例处于第二裸片切割工艺阶段的中间结构的横截面图；
图18为根据本申请的实施例的第二裸片切割工艺的流程图；
图19为根据本申请的实施例的堆叠式装置结构的横截面图，其中堆叠式装置结构包括使用图12至图17的第二裸片切割工艺从工件切割的裸片；
图20为根据本申请的实施例的堆叠式装置结构的横截面图，其中堆叠式装置结构包括使用修改版本的图12至图17的第二裸片切割工艺从工件切割的裸片；
图21-图24为根据本申请的实施例处于第三裸片切割工艺阶段的中间结构的横截面图；
图25为根据本申请的实施例的第三裸片切割工艺的流程图；
图26为根据本申请的实施例的堆叠式装置结构，其中堆叠式装置结构包括使用图21至图24的第三裸片切割工艺从工件切割的裸片。
为便于理解，在可能的情况下，将使用相同的附图标记来表示附图中共同的相同元件。可预期的是，一个实施例的元件可被有益地结合到其他实施例中。
具体实施方式
本申请的实施例提供用于切割裸片的技术，并提供包括切割的裸片的堆叠式装置结构。本申请描述的各种切割工艺可以改善所述堆叠式装置结构的鲁棒性和可靠性。例如，本申请所述的切割工艺可用于减少可能在裸片处引起压力并由此导致裸片中产生裂缝的缺陷，这反过来可以减少堆叠式装置结构中的破裂。此外，例如，本申请所述的切割工艺可提供具有改善的粘合特性的表面，而具有改善的粘合特性的表面可减少堆叠式装置结构中的分层。通过本申请的说明书，这些和其他可能的优点将变得显而易见。
通常来说，在一些实施例中，可以使用非机械工艺(如使用化学蚀刻工艺)从相应的工件切割裸片。例如，化学蚀刻工艺可以是或可以包括等离子体切割工艺或其他蚀刻工艺，其可进一步包括各向异性和/或各向同性蚀刻工艺。化学蚀刻工艺可在切割的裸片的侧壁中形成一个或多个凹痕。所述一个或多个凹痕可以是或可以形成裸片的波纹状侧壁和/或裸片的侧壁中的一个或多个凹口(notch)。然后，可以将使用非机械工艺切割的一个或多个切割的裸片结合到堆叠式装置结构中，该堆叠式装置结构具有更好的鲁棒性和可靠性。
此外，在一些实施例中，还可以使用机械工艺从相应的工件切割裸片，如机械切割(例如机械锯切)。使用机械切割形成的裸片的侧壁可以在其上形成有衬垫(liner)。然后，可以将使用机械工艺切割的一个或多个切割的裸片结合到堆叠式装置结构中，该堆叠式装置结构具有更好的鲁棒性和可靠性。
下文参考附图描述了各种特征。应当注意，附图可以按比例或不按比例绘制，且在所述所有附图中，相似结构或功能的元件由相同的附图标记表示。还需注意的是，附图仅旨在方便描述特征。附图并非旨在作为本申请的详尽描述或作为本申请范围的限制。另外，所描述的实施例无需具有所示的所有方面或优点。即使未如此表示或未如此明确地描述，结合特定实施例描述的方面或优点不必限于该实施例，而是可在任何其他实施例中实施。
用于形成堆叠式装置结构的示例性工艺
图1-图6根据本申请的实施例描述了处于用于形成堆叠式装置结构的一般工艺阶段的中间结构的横截面图。图7为根据本申请的实施例用于形成堆叠式装置结构的一般工艺的流程图。在该一般工艺中大致描述了裸片的切割以及更多的切割的具体示例，并随后描述了所得到的堆叠式装置结构。
图1描述了在第一工件40(例如硅片)上形成的多个裸片42。例如，第一工件40可包括具有任何直径(如100mm、150mm、200mm、300mm、450mm或其他直径)以及任何厚度(如525μm、675μm、725μm、775μm、925μm或其他厚度)的半导体硅片。根据设计规格，裸片42形成在第一工件40上。裸片42可包括例如存储器、处理器、专用集成电路(ASIC)、可编程集成电路(如现场可编程门阵列(FPGA)或复杂可编程逻辑器件(CPLD))等。第一工件40上可形成任何数量的裸片42。第一工件40可以被处理使得电连接器44形成裸片42上。电连接器44可以包括微凸起(microbump)，例如每个微凸起都具有铜柱并在其上形成有焊料(如无铅焊料)。在其他实施例中，电连接器44可以是其他类型的电连接器。为方便起见，裸片42的形成有电连接器44的侧面被称为“前侧”或“活动侧”，而与裸片42的前侧相对的裸片42的一侧被称为“后侧”。切割线46位于相邻的裸片42之间并且沿着裸片42的边缘，其中裸片42的边缘沿着第一工件40的表面。各个切割线46围绕每个裸片42，使得每个裸片42可以通过移除第一工件40的切割线46内的部分而被从其他裸片42切割开(如切割晶片)。
图2描述了将第一工件40附接到支撑结构50以用于裸片42的切割(例如，在翻转第一工件40之后)。例如，支撑结构50可以为玻璃或硅载体基板，或金属框架，尽管也可以使用其他支撑结构。可使用粘合剂52将第一工件40附接在所述支撑结构50上，例如粘合剂52可以是紫外线(UV)胶带，其在暴露于UV光时会失去粘合特性。使用粘合剂52将第一工件40上的裸片42的活动侧粘合到支撑结构50，同时裸片42的后侧朝上背离支撑结构50。
图3描述了裸片42从第一工件40的切割，其在图7的框202中执行。第一工件40的沿着切割线46的部分被移除以切割裸片42。下文描述了示例性的切割工艺，这些示例性的切割工艺可以实现在所述一般工艺中用于形成堆叠式装置结构或其他类型的结构。图3并没有必要地描述由至少某些下述切割工艺形成的裸片42的各个方面，如裸片42的侧壁。此外，即使没有具体示出或描述每个侧壁，但由于第一工件40的沿着每个切割线46的部分可在切割期间被同时移除，因此后续附图所描述和示出的裸片42的侧壁的各个方面可普遍应用于裸片42的每个侧壁，。
图4描述了将至少其中一个裸片42附接到基板62(在第二工件60上形成)，其至少部分的在图7的框204中执行。第二工件60可包括诸如上述用于第一工件40的半导体硅片或可包括有机基板。在一些实施例中，基板62可以是在其上形成有集成电路的裸片或可以是中介层。当被实施为在其上形成有集成电路的裸片时，基板62可包括例如存储器、处理器、专用集成电路等。中介层通常不包括活动器件，如晶体管、二极管等。第二工件60上可形成任何数量的基板62。
与上述类似的，基板62亦同样具有“前侧”和“后侧”，但这些术语不一定隐含任何特定结构。第二工件60可通过前侧处理而被处理，使得电连接器64形成在基板62上。例如，在前侧处理期间，可至少部分地通过诸如第二工件60的半导体硅片来形成穿过基板通道(TSV)。TSV可电连接到基板62的前侧上的一个或多个再分布金属层。电连接器64可包括微凸起，例如每个微凸起具有铜柱并在其上形成有或没有形成焊料(如无铅焊料)。在其他示例中，电连接器64可以是其他类型的电连接器。切割线66可被设置在相邻的基板62之间并且沿着基板62的边缘，其中基板62的边缘沿着第二工件60的外部。
在从第一工件40切割裸片42后，裸片42被从粘合剂52分离，例如包括将粘合剂52暴露于紫外光而使粘合剂52失去粘合特性。然后可将裸片42放置在基板62的第一裸片附接区域上，同时裸片42的电连接器44在第一裸片附接区域中接触基板62的电连接器64。回流工艺可用来将电连接器44回流到电连接器64，例如将所述电连接器44和电连接器64的焊料回流到一起，以将裸片42物理地和电地附接到基板62。
类似地，裸片70可被附接到基板62的第二裸片附接区域。裸片70可以是裸片42中的一个裸片，或可以是形成在另一个工件上的另一个裸片。裸片70可经历类似于图1-3以及图7的框202和204所述的用于裸片42的一般工艺的处理。裸片70可包括例如存储器、处理器、专用集成电路、可编程IC等。裸片70可包括电连接器72，电连接器72可包括微凸起，每个微凸起都具有铜柱并在其上形成有焊料(如无铅焊料)。在其他实施例中，电连接器72可以是其他类型的电连接器。在从其工件切割裸片70后，可将裸片70放置在基板62的第二裸片附接区域上，同时裸片70的电连接器72在第二裸片附接区域中接触基板62的电连接器64。回流工艺可用来将电连接器72回流到电连接器64，例如将电连接器72和电连接器64的焊料回流到一起，以将裸片70物理地和电地附接到基板62。将电连接器72和电连接器64回流在一起的回流工艺可以与将电连接器44和电连接器64回流在一起的回流工艺相同或不同。在其他实施例中，其他的裸片也可以被附接到基板62。
在裸片42和裸片70被附接到基板62后，在图7的框206中，基板62上的裸片42和裸片70可以被封装。封装物68可以被形成在第二工件60的前侧上并形成在裸片42和裸片70之间。例如，封装物68可以是模塑底部填充(mold underfill，MUF)，其使用真空辅助模具系统进行分配和模制。在其他实施例中，封装物68可包括在不同操作中形成的多种材料，如使用分配工艺形成的毛细底部填充(capillary underfill,CUF)和随后使用压缩模制或其他模制工艺形成的模塑料(molding compound)。封装物68可在回流的电连接器44和电连接器64周围的裸片42和基板62之间形成、在回流的电连接器72和电连接器64周围的裸片70和基板62之间形成、以及在裸片42和裸片70的侧壁之间横向形成。
图5描述了第二工件60上的后侧处理。例如，在后侧处理期间，通过研磨或抛光半导体硅片(通过使用如化学机械抛光(CMP))，可透过第二工件60的半导体硅片暴露TSV。在基板62的后侧上可以形成一个或多个再分布金属层，其中TSV可以电连接到所述一个或多个再分布金属层。电连接器80形成在基板62的后侧上，而电连接器80也电连接到所述一个或多个再分布金属层。电连接器80可包括受控塌陷芯片连接(C4)凸起，其中每个凸起均具有凸起下金属化(under bump metallization,UBM)并在其上形成有焊料(如无铅焊料)。在其他实施例中，电连接器80可以是其他类型的电连接器，例如球栅阵列(BGA)球。
图6是描述了从第二工件60切割基板62后的堆叠式装置结构，其中切割在图7的框208中执行。沿着切割线66的第二工件60和封装物68的部分可通过基板62的切割而被移除。基板62的切割例如可通过使用机械锯切而进行切割。
图1-6所示及描述的一般工艺仅为形成堆叠式装置结构的示例性工艺。所描述的操作流程可以任何逻辑顺序来执行。例如，切割基板62、将裸片42和裸片70附接到基板62和/或形成封装物68的顺序可被修改和替换成任何逻辑顺序。
此外，图1-图6中的一些组件已被描述成具有特定特性和/或被描述为特定组件。这些仅为示例，旨在传达本申请的实施例的各个方面。本领域普通技术人员将容易地理解对这些组件做出的各项修改和/或替换。
第一示例裸片切割工艺
图8和图9根据本申请的实施例描述了处于第一裸片切割工艺阶段的中间结构的横截面图。图10为根据本申请的实施例的第一裸片切割工艺的流程图。第一裸片切割工艺可在图7的框202处执行。
图8描述了在切割线46中激光切槽后的图2的中间结构的一部分，其中激光切槽在图10的框222中执行。然后，图9描述了使用等离子切割进行切割后的裸片42，其中使用等离子切割裸片在图10的框224中执行。本实施例中的等离子切割可使用深度反应离子蚀刻(DRIE)，如博世(Bosch)DRIE工艺。本实施例中的等离子切割在裸片42上形成波状侧壁88，例如每个侧壁都具有一些列垂直的凹形表面。每个弯曲表面可具有约0.1μm至约50μm范围内的曲率半径90、约0.1μm至约100μm范围内的深度92以及约0.1μm至约100μm范围内的高度94。可通过控制等离子切割的工艺参数(如等离子能量)来控制曲率半径90、深度92和高度94。
图11根据本申请实施例描述了堆叠式装置结构的横截面图，其中堆叠式装置结构包括使用图8和图9的第一裸片切割工艺从工件切割的裸片42和裸片70。图11的堆叠式装置结构与图6的堆叠式装置结构相似。在图11中，每个裸片42和裸片70都具有波状侧壁88，封装物68粘合在波状侧壁88上。
通过使用等离子切割而非机械锯切工艺来切割裸片42和裸片70，可避免由机械锯切引起的沿着裸片42和裸片70的侧壁的缺陷。例如，机械锯切会沿着裸片的侧壁引起破裂和碎裂。这些缺陷可由诸如切割锯的刀片类型、刀片的砂粒尺寸、刀片的振动以及在机械锯切切割裸片期间刀片的磨损和撕裂引起。这些缺陷可以是破裂的来源，而所述破裂可以传播到裸片的活动部分中和/或可以是导致局部压力集中区域的原因。缺陷和/或由缺陷引起的压力可导致封装物在裸片侧壁处的分层和/或低介电常数(low-k)介电层(例如，用于中间金属化层)在裸片侧壁处的分层或破裂。通过避免使用机械锯切工艺来切割裸片42和裸片70，可避免由机械锯切引起的诸如破裂和碎裂的缺陷。因此，堆叠式装置结构中的分层和破裂的发生可以被减少，同时堆叠式装置结构中的局部压力集中区域的情况也可以被减少。
此外，与使用例如机械锯切工艺形成的笔直和垂直的侧壁相比，裸片42和裸片70的波状侧壁88具有更大的表面面积。封装物68粘合至该更大的表面面积，这又使得相应的裸片42/裸片70与封装物68之间有更大的粘合力。另外，裸片42和裸片70的波状侧壁88可减少破裂的影响。波状侧壁88的更大的表面面积可增加破裂到达裸片42和裸片70的活动部分所必须传播的距离。此外，波状侧壁88可沿着侧壁产生不连续性，该不连续性可以与传播的破裂相交并使这些传播的破裂停止传播。因此，堆叠式装置结构中的破裂的不利影响可以被减少。
第二示例裸片切割工艺
图12-图17根据本申请的实施例描述了处于第二裸片切割工艺阶段的中间结构的横截面图。图18为根据本申请的实施例的第二裸片切割工艺的流程图。第二裸片切割工艺可以在图7中的框202处执行。
图12描述了在切割线46中激光切槽后的图2的中间结构的一部分，其中激光切槽在图18的框232中执行。在图13中，掩膜(mask)100被沉积在裸片42的后侧上，并被图形化(patterned)以暴露切割线46，其在图18的框234中执行。掩膜100可包含或可以是任何合适的硬掩膜材料，如氮化硅、氮氧化硅、氮化硅碳(silicon carbon nitride)或其他材料，并可通过旋转涂布、化学气相沉积(CVD)、物理气相沉积(PVD)或其他沉积技术来沉积。掩膜100可使用光刻工艺和蚀刻工艺进行图形化。掩膜100一旦被图形化，则具有对应于切割线46的掩膜开口。
在掩膜被图形化的情况下，可在各向异性蚀刻工艺期间使用掩膜100以在相应的切割线46中形成具有垂直侧壁的凹槽102，其在图18的框236中执行。各向异性蚀刻工艺可以是等离子切割工艺、活性离子蚀刻(RIE)或其他各向异性蚀刻工艺。凹槽102可以被形成至第一工件40中的深度104，其中深度104在约0.1μm至约100μm的范围内。
图14和图15描述了在凹槽102的侧壁上的钝化膜106的形成，其在图18的框238中执行。在所示的实施例中，钝化膜106被独立于图13所述的蚀刻工艺而形成，但在其他实施例中，凹槽102的侧壁上的钝化膜106可作为图13所述的蚀刻工艺的副产物而形成。在图14中，钝化膜106被共形地沉积在掩膜100上，并且沿着侧壁以及位于凹槽102的底表面上。钝化膜106可包括或可以是蚀刻选择率(etch selectivity)与第一工件40的材料不同的任何材料。例如，钝化膜106可以包括或可以是氮氧化硅、碳化硅、氮化硅碳、氮化硅或其他材料，并且可使用CVD、原子层沉积(ALD)或其他保形沉积技术来沉积。在图15中，钝化膜106的水平部分被移除，如通过使用各向异性蚀刻工艺，例如RIE。钝化膜106可保留在凹槽102的侧壁上，而第一工件40在相应的切割线46中的表面(例如凹槽102的底表面)可以被暴露。
图16描述了在钝化膜106下方裸片42中凹口110的形成，其在图18的框240中执行。可使用各向同性蚀刻工艺形成凹口110，其中各向同性蚀刻工艺可以是RIE、湿法蚀刻工艺或其他各向同性蚀刻工艺。钝化膜106防止蚀刻工艺蚀刻由钝化膜106覆盖的裸片42的侧壁(例如，因为蚀刻选择率的差异)。各向同性蚀刻工艺垂直地在切割线46中蚀刻第一工件40，并且沿着凹槽102的底部穿过暴露的表面横向蚀刻裸片42，形成裸片42中的凹口110。凹口110被描述为具有方形轮廓，但在其他示例中，凹口110可具有半圆形或半椭圆形轮廓。每个凹口110可具有沿着裸片42的对应侧壁的深度112，该深度112在约0.1μm至约100μm的范围内，并具有从相应侧壁进入裸片42的深度114，该深度114在约0.1μm至约100μm的范围内。
图17描述了进一步的蚀刻以切割裸片42，其在图18的框242中执行。各向异性蚀刻工艺可在切割线46中穿过第一工件40的剩余部分蚀刻。各向异性蚀刻工艺可以是等离子切割工艺、活性离子蚀刻(RIE)或其他各向异性蚀刻工艺。然后掩膜100可以被移除，如使用湿法蚀刻工艺、等离子灰化工艺或其他工艺。图17描述了保留在裸片42的侧壁上部(如在凹口110的上方)的钝化膜106。在一些实施例中，可通过诸如移除掩膜100的工艺或其他工艺来移除钝化膜106。在其他实施例中，例如，当钝化膜作为各向异性蚀刻工艺的副产物而形成时，钝化膜可以沿着裸片42的侧壁(如在所述凹口110的上方和下方)并且沿着凹口110的表面。
图19根据本申请的实施例描述了堆叠式装置结构的横截面图，其中堆叠式装置结构包括使用图12至图17的第二裸片切割工艺从工件切割的裸片42和70。图19的堆叠式装置结构与图6的堆叠式装置结构类似。在图19中，每个裸片42和裸片70在侧壁中均具有相应的凹口110，并且封装物68被设置在每个凹口110的表面中并粘合至每个凹口110的表面。
图20根据本申请的实施例描述了堆叠式装置结构的横截面图，其中堆叠式装置结构包括使用修改版本的图12至图17的第二裸片切割工艺从工件切割的裸片42和70。图20的堆叠式装置结构与图6的堆叠式装置结构类似。在图20中，每个裸片42和70在侧壁中具有多个凹口110，封装物68被设置在每个凹口110的表面中并粘合至每个凹口110的表面。在所示的实施中，裸片42和70的每个侧壁具有三个凹口110，而其他实施例中，每个侧壁可具有任意数量的凹口110，如两个、四个或其他数量。此外，裸片42的每个侧壁中的凹口110的数量可以与裸片70的每个侧壁中的凹口110的数量不同。通过重复适当次数的图13-图16以及图18的框236-框240的蚀刻和钝化操作，可在裸片42和70的侧壁中形成多个凹口110。可通过控制蚀刻工艺的持续时间和/或蚀刻化学过程来控制深度104、112和114，以提供合适的深度而得到侧壁中期望数量的凹口110。
与第一示例裸片切割工艺一样，通过使用蚀刻而非机械锯切工艺来切割裸片42和70，可避免由机械锯切引起的沿着裸片42和70侧壁的缺陷。通过避免使用机械锯切工艺来切割裸片42和70，可避免由机械锯切引起的诸如破裂和碎裂的缺陷。因此，堆叠式装置结构中的分层和破裂的发生可以被减少，并且堆叠式装置结构中的局部压力集中区的情况也可以被减少。
此外，与例如可使用机械锯切工艺形成的竖直和垂直的侧壁相比，具有一个或多个凹口110的裸片42和70的侧壁具有更大的表面面积。封装物68粘合到该更大的表面面积，这又使得相应的裸片42/70与封装物68之间具有更大的粘合力。相邻裸片42和70中的凹口110可使用封装物68提供内部锁定。另外，具有一个或多个凹口110的裸片42和70的侧壁可减少裂缝的影响。侧壁的更大的表面面积可增加裂缝到达裸片42和70的活动部分所必需传播的距离。此外，凹口110可沿着所述侧壁产生不连续性，不连续性可与传播的裂缝相交，并使传播的裂缝停止传播。更进一步地说，凹口110可提供交替的压力集中区。通过将凹口110放置的远离裸片42和70的活动部分，裂缝可以被转移远离裸片42和70的活动部分。因此，堆叠式装置结构中裂缝的不利影响可以被减少。
第三示例裸片切割工艺
图21-24根据本申请的实施例描述了处于第三裸片切割工艺阶段的中间结构的横截面图。图25为根据本申请的实施例的第三裸片切割工艺的流程图。第三裸片切割工艺可以在图7中的框202处执行。
图21描述了在切割线46中激光切槽之后的图2的中间结构的一部分，其中激光切槽在图25的框252中执行。然后，图22描述了沿着切割线46使用诸如机械切割(如机械锯切)而被切割的裸片42，其中机械切割在图25的框254中执行。
图23描述了沿着裸片42的侧壁的衬垫(liner)120的形成，其在图25的框256中执行。衬垫120可以包括或者可以是氮化物，例如氮化硅或其他材料，并且可以使用旋转涂布、CVD或其他沉积工艺形成。图24描述了平滑衬垫120，其在图25的框258中执行。例如，可以使用蚀刻工艺来平滑衬垫120，以实现衬垫120的光滑外表面。例如，也可以实施倾斜定向蚀刻工艺和/或各向同性蚀刻工艺以平滑衬垫120的外表面。在一些实施例中，图24的平滑操作可以省略，例如当衬垫120被以足够的光滑度沉积时。在某些实施例中，衬垫120的厚度(如在垂直于裸片的支撑侧壁的方向上)在约0.1μm至约100μm的范围内。而在一些实施例中，外表面的表面粗糙度在约0.1nm RMS至约1,000nm RMS的范围内。
图26根据本申请的实施例描述了堆叠式装置结构，其中堆叠式装置结构包括使用图21至图24的第三裸片切割工艺从工件切割的裸片42和70。图26的堆叠式装置结构与图6的堆叠式装置结构类似。在图26中，每个裸片42和70具有笔直且垂直的侧壁，在侧壁上形成有相应的衬垫120。封装物68粘合至衬垫120。
通过使用沿着裸片42和70的侧壁的衬垫120，由机械锯切工艺引起的沿着裸片42和70的侧壁的任何缺陷可被衬垫120覆盖。由衬垫120覆盖缺陷可减少或减轻缺陷可能对封装物68产生的影响。此外，衬垫120可以是应力缓冲层，其可以阻止破裂传播到相应的衬垫120以外。
***
尽管图11、19、20和26的堆叠式装置结构被示出并描述为包括根据本申请所述示例工艺而形成的两个裸片42和70，但在一些实施例中，堆叠式装置结构可包括根据本申请所述示例工艺之一而形成的一个裸片，以及使用机械锯切工艺而切割的一个或多个裸片。根据本申请实施例的堆叠式装置结构可包括根据本申请所述任何示例工艺而切割的任何数量的裸片，除此此外，堆叠式装置结构可包括使用机械锯切工艺而切割的任何数量的裸片。
本申请实施例的某些方面可允许更稳健的堆叠式装置结构。如上所述，由机械锯切引起的缺陷的影响可以被消除或减轻。这使得堆叠式装置结构更加可靠，并且出现引起堆叠式装置结构失效的缺陷的可能性变低。因此，根据本申请描述的某些实施例形成的堆叠式装置结构可能更适用于需要高可靠性的应用，如汽车、军事或航空航天应用。
如本申请所使用的(包括权利要求)，表示项目列中的“至少一个”的术语表示那些项目的任何组合，包括单个成员。作为示例，“x、y和z中的至少一个”包括：x、y、z、x-y、x-z、y-z、x-y-z及其任何组合(如，x-y-y和x-x-y-z)。
虽然前述内容是针对本申请的具体实施例，但是在不背离本申请的基本范围的前提下，可以设想其它和另外的实施例，并且本发明的基本范围由所附的权利要求确定。

Claims (12)

1.一种结构，其特征在于，所述结构包括：
基板；
第一裸片，所述第一裸片具有第一侧壁，所述第一侧壁具有至少一个第一凹痕，所述第一裸片被附接至所述基板；以及
封装物，所述封装物位于所述第一裸片与所述基板之间，所述封装物被设置在所述第一凹痕中并被粘合到所述第一凹痕的第一表面。
2.根据权利要求1所述的结构，其特征在于，所述第一侧壁是波状侧壁，所述第一凹痕是所述波状侧壁的凹形表面。
3.根据权利要求1所述的结构，其特征在于，所述第一侧壁是具有一个或多个凹口的垂直侧壁，所述至少一个第一凹痕是所述一个或多个凹口。
4.根据权利要求1所述的结构，其特征在于，所述结构还包括第二裸片，所述第二裸片具有第二侧壁，所述第二侧壁具有至少一个第二凹痕，所述第二裸片被附接至所述基板，其中所述封装物还位于所述第二裸片与所述基板之间并且横向地位于所述第一侧壁与所述第二侧壁之间以及粘合至所述第一侧壁与所述第二侧壁，所述封装物还被设置在所述第二凹痕中并且粘合至所述第二凹痕的第二表面。
5.根据权利要求1所述的结构，其特征在于，所述第一侧壁是通过从工件切割所述第一裸片而形成，所述从工件切割所述第一裸片包括使用深反应离子蚀刻DRIE工艺。
6.根据权利要求1所述的结构，其特征在于，所述第一侧壁是通过从工件切割所述第一裸片而形成，所述从工件切割所述第一裸片包括使用各向异性蚀刻工艺以及随后的各向同性蚀刻工艺，其中至少一部分由所述各向异性蚀刻工艺形成的侧壁在所述各向同性蚀刻工艺期间被钝化。
7.根据权利要求1所述的结构，其特征在于，所述基板是具有集成电路的第二裸片，或者所述基板是中介层。
8.一种结构，其特征在于，所述结构包括：
基板；
第一裸片，所述第一裸片具有第一侧壁以及沿着所述第一侧壁的第一衬垫，所述第一裸片被附接至所述基板；以及
封装物，所述封装物位于所述第一裸片和所述基板之间，所述封装物被粘合至所述第一衬垫。
9.根据权利要求8所述的结构，其特征在于，所述结构还包括第二裸片，所述第二裸片具有第二侧壁以及沿着所述第二侧壁的第二衬垫，所述第二裸片被附接至所述基板，其中所述封装物还位于所述第二裸片与所述基板之间，并且横向地位于所述第一裸片与所述第二裸片之间以及粘合至所述第二衬垫。
10.根据权利要求8所述的结构，其特征在于，所述第一衬垫是氮化物层。
11.根据权利要求8所述的结构，其特征在于，形成所述第一衬垫包括沿着所述第一侧壁沉积所述第一衬垫以及使用蚀刻工艺平滑所述第一衬垫。
12.根据权利要求8所述的结构，其特征在于，所述基板是具有集成电路的第二裸片，或者所述基板是中介层。
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