CN209087856U - The efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree - Google Patents
The efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree Download PDFInfo
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- CN209087856U CN209087856U CN201822090104.2U CN201822090104U CN209087856U CN 209087856 U CN209087856 U CN 209087856U CN 201822090104 U CN201822090104 U CN 201822090104U CN 209087856 U CN209087856 U CN 209087856U
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Abstract
The utility model relates to a kind of high matching degree efficient silicon/crystalline silicon heterojunction solar battery electrode structure, it includes N-type crystalline silicon piece, the front and back of the N-type crystalline silicon piece is equipped with amorphous silicon intrinsic layer, the outside of the positive amorphous silicon intrinsic layer is equipped with N-shaped amorphous silicon doped layer, and the outside of the N-shaped amorphous silicon doped layer is equipped with the face n TCO conductive film；P-type amorphous silicon doped layer is equipped on the outside of the amorphous silicon intrinsic layer at the back side, the outside of the p-type amorphous silicon doped layer is equipped with the face p TCO conductive film；TCO of the face the n TCO conductive film using work function lower than the face p TCO conductive film is as electrically conducting transparent antireflection layer.The utility model is by way of double-sided deposition difference TCO, the face n uses the TCO of low work function, the face p uses the TCO of high work function, amorphous silicon doped layer is set to form good contact with TCO, reduce the contact resistance of amorphous silicon doped layer and TCO, contact loss is reduced, the photoelectric conversion efficiency of HJT solar battery is promoted.
Description
Technical field
The utility model relates to photovoltaic high-efficiency battery technical field more particularly to a kind of efficient crystal silicon of high matching degree are heterogeneous
Joint solar cell electrode structure.
Background technique
" photovoltaic leader plan " is that National Energy Board is quasi- since 2015, and the photovoltaic all carried out every year later is helped special
Item plan, it is intended that for the purpose of promoting photovoltaic power generation technology progress, industrial upgrading, market application and cost decline, pass through market branch
Hold and experiment and demonstration, fan out from point to area, acceleration technique achievement is converted to market application, and fall behind technology, production capacity is eliminated, realize
The year two thousand twenty photovoltaic power generation electricity consumption side cheap internet access target.The technology employed in " leader " plan and the component used are all capable
The technology and product of industry technology clear ahead, efficient PERC, black silicon, N-type be two-sided, the high-efficiency batteries such as silicon heterogenous (HJT) are opened
Hair is got more and more attention.Wherein the high transformation efficiency of silicon based hetero-junction (HJT) solar cell, high open circuit voltage, low-temperature coefficient,
No photo attenuation (LID) becomes most one of popular research direction without advantages such as electroluminescent decaying (PID), low making technology temperature.
During preparing HJT solar battery, PECVD plays most important angle in the aspect of performance for determining product
Color.The passivation layer that incidence surface is deposited is intrinsic layer (i), and in (n) layer of stacked on top p-doped, the same deposition intrinsic in the back side is blunt
Change layer (i) and stack (p) layer of boron-doping, the thickness of surface passivation layer i/p and i/n may each be about 12~20nm.Then positive and negative two
The transparent conductive film of about 50-100nm on the sputter of face is mostly used as electrically conducting transparent using traditional ITO (indium tin oxide) at present
Film layer can manufacture the conducting wire of tow sides with the mode of silk-screen low temperature silver paste on nesa coating, or use copper electroforming
Mode make the conducting wire of incidence surface, just complete the production of a HJT cell piece in this way.
As shown in Figure 1, the electrode structure of the HJT cell piece for the prior art.The prior art is front and back sides electrically conducting transparent oxygen
Compound film all uses ITO (indium tin oxide) as transparent conductive film layer.But transmission and film layer of the carrier between film layer
Band gap, work function it is related, for HJT battery, the face n and p in face of the work function requirement of TCO be it is different, the TCO in the face p is wanted
It asks with high work function, the TCO in the face n requires low work function.When two-sided TCO uses ITO structure, p, n can not be matched
The requirement in face can not further promote solar energy so that amorphous silicon doped layer and transparent conductive film layer can not be matched preferably
The photoelectric conversion efficiency of battery.
Utility model content
Purpose of the utility model is to overcome the above-mentioned shortcomings and provide a kind of efficient silicon/crystalline silicon heterojunction sun of high matching degree
Can cell electrode structure so that amorphous silicon doped layer and tco layer more can good match, form good contact.
Purpose of the utility model is realized as follows:
A kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree, it includes N-type crystalline silicon piece, described
The front and back of N-type crystalline silicon piece is equipped with amorphous silicon intrinsic layer, and the outside of the positive amorphous silicon intrinsic layer is equipped with N-shaped
The outside of amorphous silicon doped layer, the N-shaped amorphous silicon doped layer is equipped with the face n TCO conductive film, the outside of the face the n TCO conductive film
Equipped with several Ag electrodes；P-type amorphous silicon doped layer is equipped on the outside of the amorphous silicon intrinsic layer at the back side, the p-type amorphous silicon is mixed
The outside of diamicton is equipped with the face p TCO conductive film, and the outside of the face the p TCO conductive film is equipped with several Ag electrodes；The face the n TCO is led
TCO of the electrolemma using work function lower than the face p TCO conductive film is as electrically conducting transparent antireflection layer.
A kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree, the face the n TCO conductive film use function
Function is the TCO of 3.5 ~ 4.7eV as electrically conducting transparent antireflection layer.
A kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree, the face the p TCO conductive film use function
Function is the TCO of 5.1 ~ 6.9eV as electrically conducting transparent antireflection layer.
A kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree, the thickness of the face the n TCO conductive film
For 70 ~ 110nm, the face the p TCO conductive film with a thickness of 70 ~ 110nm.
A kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree, the amorphous silicon intrinsic at the positive back side
Layer is with a thickness of 5 ~ 10nm.
A kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree, the N-shaped amorphous silicon adulterate thickness
Degree be 4 ~ 8nm, the p-type amorphous silicon doped layer with a thickness of 7 ~ 15 nm.
A kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree, the TCO conductive film with a thickness of 70 ~
110nm。
Compared with prior art, the utility model has the beneficial effects that
The utility model is by way of double-sided deposition difference TCO, and wherein the face n uses the TCO of low work function, and the face p uses
The TCO of high work function, make amorphous silicon doped layer and TCO formed it is good contact, to reduce connecing for amorphous silicon doped layer and TCO
Electric shock resistance, reduces contact loss, to promote the photoelectric conversion efficiency of HJT solar battery.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing HJT heterojunction solar battery.
Fig. 2 is the structural schematic diagram of the utility model HJT heterojunction solar battery.
Wherein:
N-type crystalline silicon piece 1, amorphous silicon intrinsic layer 2, N-shaped amorphous silicon doped layer 3, p-type amorphous silicon doped layer 4, the face n TCO are led
Electrolemma 5, the face p TCO conductive film 6, Ag electrode 7.
Specific embodiment
Embodiment 1:
Referring to fig. 2, the utility model relates to a kind of high matching degree efficient silicon/crystalline silicon heterojunction solar battery electrode knot
Structure, it includes N-type crystalline silicon piece 1, and the front and back of the N-type crystalline silicon piece 1 is equipped with amorphous silicon intrinsic layer 2；
The outside of the positive amorphous silicon intrinsic layer 2 is equipped with N-shaped amorphous silicon doped layer 3, the N-shaped amorphous silicon doped layer
3 outside is equipped with the face n TCO conductive film 5, and the outside of the face the n TCO conductive film 5 is equipped with several Ag electrodes 7；
P-type amorphous silicon doped layer 4, the p-type amorphous silicon doped layer 4 are equipped on the outside of the amorphous silicon intrinsic layer 2 at the back side
Outside be equipped with the face p TCO conductive film 6, the outside of the face the p TCO conductive film 6 is equipped with several Ag electrodes 7.
It is the ITO of 4.3eV as electrically conducting transparent antireflection layer that the face the n TCO conductive film 5, which uses work function,, the face n
TCO conductive film 5 with a thickness of 100nm；The face the p TCO conductive film 6 uses work function to subtract for the IWO of 5.8eV as electrically conducting transparent
Reflecting layer, the face the p TCO conductive film 6 with a thickness of 100nm.
The utility model relates to a kind of high matching degree efficient silicon/crystalline silicon heterojunction solar battery electrode structure preparation
Method, including the following steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) double intrinsic amorphous silicon layers at the positive back side are prepared by PECVD, the amorphous silicon intrinsic layer 2 at the positive back side respectively uses
One step completes 7nm deposition；
(3) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(4) N-shaped amorphous silicon doped layer 3 is prepared using plasma enhanced chemical vapor deposition, with a thickness of 6nm；
(5) p-type amorphous silicon doped layer 4, overall thickness 10nm are prepared using plasma activated chemical vapour deposition；
(6) ITO is deposited in the face n TCO conductive film 5 using PVD method, is deposited using the method for RPD in the face p TCO conductive film 6
IWO, thickness are respectively 100nm；
(7) positive back side Ag electrode 7 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film；
(9) electrical property of test battery is carried out.
Embodiment 2:
Referring to fig. 2, the utility model relates to a kind of high matching degree efficient silicon/crystalline silicon heterojunction solar battery electrode knot
Structure, it includes N-type crystalline silicon piece 1, and the front and back of the N-type crystalline silicon piece 1 is equipped with amorphous silicon intrinsic layer 2；
The outside of the positive amorphous silicon intrinsic layer 2 is equipped with N-shaped amorphous silicon doped layer 3, the N-shaped amorphous silicon doped layer
3 outside is equipped with the face n TCO conductive film 5, and the outside of the face the n TCO conductive film 5 is equipped with several Ag electrodes 7；
P-type amorphous silicon doped layer 4, the p-type amorphous silicon doped layer 4 are equipped on the outside of the amorphous silicon intrinsic layer 2 at the back side
Outside be equipped with the face p TCO conductive film 6, the outside of the face the p TCO conductive film 6 is equipped with several Ag electrodes 7.
It is the AZO of 3.8eV as electrically conducting transparent antireflection layer, the face n that the face the n TCO conductive film 5, which uses work function,
TCO conductive film 5 with a thickness of 100nm；The face the p TCO conductive film 6 uses work function to subtract for the IMO of 6.8eV as electrically conducting transparent
Reflecting layer, the face the p TCO conductive film 6 with a thickness of 100nm.
The utility model relates to a kind of high matching degree efficient silicon/crystalline silicon heterojunction solar battery electrode structure preparation
Method, including the following steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) double intrinsic amorphous silicon layers at the positive back side are prepared by PECVD, the amorphous silicon intrinsic layer 2 at the positive back side respectively uses
One step completes 7nm deposition；
(3) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(4) N-shaped amorphous silicon doped layer 3 is prepared using plasma enhanced chemical vapor deposition, with a thickness of 6nm；
(5) p-type amorphous silicon doped layer 4, overall thickness 10nm are prepared using plasma activated chemical vapour deposition；
(6) TCO conductive film is deposited using PVD method, wherein the face n TCO conductive film 5 deposits AZO, and the face p TCO conductive film 6 is heavy
Product IMO, thickness is respectively 100nm；
(7) positive back side Ag electrode 7 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film；
(9) electrical property of test battery is carried out.
Embodiment 3:
Referring to fig. 2, the utility model relates to a kind of high matching degree efficient silicon/crystalline silicon heterojunction solar battery electrode knot
Structure, it includes N-type crystalline silicon piece 1, and the front and back of the N-type crystalline silicon piece 1 is equipped with amorphous silicon intrinsic layer 2；
The outside of the positive amorphous silicon intrinsic layer 2 is equipped with N-shaped amorphous silicon doped layer 3, the N-shaped amorphous silicon doped layer
3 outside is equipped with the face n TCO conductive film 5, and the outside of the face the n TCO conductive film 5 is equipped with several Ag electrodes 7；
P-type amorphous silicon doped layer 4, the p-type amorphous silicon doped layer 4 are equipped on the outside of the amorphous silicon intrinsic layer 2 at the back side
Outside be equipped with the face p TCO conductive film 6, the outside of the face the p TCO conductive film 6 is equipped with several Ag electrodes 7.
It is the TCO of 4.3eV as electrically conducting transparent antireflection layer that the face the n TCO conductive film 5, which uses work function, such as AZO,
ITO, the face the n TCO conductive film 5 with a thickness of 100nm；The face the p TCO conductive film 6 uses work function to make for the TCO of 6.3eV
For electrically conducting transparent antireflection layer, such as IWO, IMO, ITiO etc., the face p TCO conductive film 6 with a thickness of 100nm.
The utility model relates to a kind of high matching degree efficient silicon/crystalline silicon heterojunction solar battery electrode structure preparation
Method, including the following steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) double intrinsic amorphous silicon layers at the positive back side are prepared by PECVD, the amorphous silicon intrinsic layer 2 at the positive back side respectively uses
One step completes 7nm deposition；
(3) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(4) N-shaped amorphous silicon doped layer 3 is prepared using plasma enhanced chemical vapor deposition, with a thickness of 6nm；
(5) p-type amorphous silicon doped layer 4, overall thickness 10nm are prepared using plasma activated chemical vapour deposition；
(6) TCO conductive film is deposited using PVD method, wherein the face n TCO conductive film 5 deposits ITO, and the face p TCO conductive film 6 is heavy
Product ITiO, thickness is respectively 100nm；
(7) positive back side Ag electrode 7 is formed by silk-screen printing；
(8) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film；
(9) electrical property of test battery is carried out.
By the embodiments of the present invention data and the two-sided TCO structure difference other parameters prior art pair all the same
Than the electrical property of the utility model and the prior art is compared referring to following table, mainly from open-circuit voltage Voc, short circuit current Isc and is filled out
Factor FF embodiment is filled, the promotion of the solar battery unit for electrical property parameters of available the utility model makes turning for solar battery
Change the promotion that efficiency Eta has absolute 0.1%.
| Voc(mV) | Isc(mA/cm2) | FF(%) | Eta(%) | |
| The prior art | 736.4 | 38.52 | 80 | 22.693 |
| Embodiment 1 | 736.6 | 38.53 | 80.35 | 22.804 |
| Embodiment 2 | 736.9 | 38.5 | 80.25 | 22.767 |
| Embodiment 3 | 736.5 | 38.55 | 80.28 | 22.793 |
The above is only the specific application examples of the utility model, do not constitute any limit to the protection scope of the utility model
System.Any technical scheme formed by adopting equivalent transformation or equivalent replacement, all fall within the utility model rights protection scope it
It is interior.
Claims (6)
1. a kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree, it includes N-type crystalline silicon piece (1), institute
The front and back for stating N-type crystalline silicon piece (1) is equipped with amorphous silicon intrinsic layer (2), it is characterised in that: the positive amorphous silicon
The outside of intrinsic layer (2) is equipped with N-shaped amorphous silicon doped layer (3), and the outside of the N-shaped amorphous silicon doped layer (3) is equipped with the face n TCO
The outside of conductive film (5), the face the n TCO conductive film (5) is equipped with several Ag electrodes (7)；The amorphous silicon intrinsic layer at the back side
(2) outside is equipped with p-type amorphous silicon doped layer (4), and the outside of the p-type amorphous silicon doped layer (4) is equipped with the face p TCO conductive film
(6), the outside of the face the p TCO conductive film (6) is equipped with several Ag electrodes (7)；The face the n TCO conductive film (5) uses work function
Lower than the face p TCO conductive film (6) TCO as electrically conducting transparent antireflection layer.
2. a kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree according to claim 1, special
Sign is: it is the TCO of 3.5 ~ 4.7eV as electrically conducting transparent antireflection layer that the face the n TCO conductive film (5), which uses work function,.
3. a kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree according to claim 1, special
Sign is: it is the TCO of 5.1 ~ 6.9eV as electrically conducting transparent antireflection layer that the face the p TCO conductive film (6), which uses work function,.
4. a kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree according to claim 1, special
Sign is: the face the n TCO conductive film (5) with a thickness of 70 ~ 110nm, the face the p TCO conductive film (6) with a thickness of 70 ~
110nm。
5. a kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree according to claim 1, special
Sign is: the amorphous silicon intrinsic layer (2) is with a thickness of 5 ~ 10nm.
6. a kind of efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree according to claim 1, special
Sign is: the N-shaped amorphous silicon doped layer (3) with a thickness of 4 ~ 8nm, the p-type amorphous silicon doped layer (4) with a thickness of 7 ~ 15
nm。
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Effective date of registration: 20220329 Address after: 313100 zheneng Smart Energy Technology Industrial Park, Meishan Town, Changxing County, Huzhou City, Zhejiang Province Patentee after: Zhejiang Aikang Photoelectric Technology Co.,Ltd. Patentee after: Jiangsu Aikang Energy Research Institute Co., Ltd Address before: No. 188, Huachang Road, yangshe Town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee before: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. |