CN209087860U - The silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer - Google Patents

The silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer Download PDF

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CN209087860U
CN209087860U CN201822091559.6U CN201822091559U CN209087860U CN 209087860 U CN209087860 U CN 209087860U CN 201822091559 U CN201822091559 U CN 201822091559U CN 209087860 U CN209087860 U CN 209087860U
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amorphous silicon
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intrinsic layer
silicon
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郭小勇
易治凯
汪涛
王永谦
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Jiangsu Aikang Energy Research Institute Co., Ltd
Zhejiang Aikang Photoelectric Technology Co.,Ltd.
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Jiangsu Love Energy Research Institute Co Ltd
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

The utility model relates to a kind of lamination intrinsic layer silicon/crystalline silicon heterojunction solar battery electrode structure, it includes N-type crystalline silicon piece, the front of the N-type crystalline silicon piece is equipped with the face n amorphous silicon intrinsic layer first layer, the face the n amorphous silicon intrinsic layer second layer and the face n amorphous silicon intrinsic layer third layer, and the back side of the N-type crystalline silicon piece is equipped with the face p amorphous silicon intrinsic layer；The face the n amorphous silicon intrinsic layer first layer is deposited using pure silane, the face the n amorphous silicon intrinsic layer second layer is deposited using the mixed gas of silane and carbon dioxide deposition, the face the n amorphous silicon intrinsic layer third layer using the mixed gas of silane, carbon dioxide and hydrogen；Amorphous silicon doped layer is equipped on the outside of the face the n amorphous silicon intrinsic layer third layer and the face p amorphous silicon intrinsic layer, the outside of the amorphous silicon doped layer is equipped with TCO conductive film.The utility model can effectively be passivated crystal silicon surface and the transmitance of amorphous silicon intrinsic layer itself is high, promote the photoelectric conversion efficiency of battery.

Description

The silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer
Technical field
The utility model relates to photovoltaic high-efficiency battery technical field more particularly to a kind of silicon/crystalline silicon heterojunctions of lamination intrinsic layer Electrode of solar battery structure.
Background technique
" photovoltaic leader plan " is that National Energy Board is quasi- since 2015, and the photovoltaic all carried out every year later is helped special Item plan, it is intended that for the purpose of promoting photovoltaic power generation technology progress, industrial upgrading, market application and cost decline, pass through market branch Hold and experiment and demonstration, fan out from point to area, acceleration technique achievement is converted to market application, and fall behind technology, production capacity is eliminated, realize The year two thousand twenty photovoltaic power generation electricity consumption side cheap internet access target.The technology employed in " leader " plan and the component used are all capable The technology and product of industry technology clear ahead, efficient PERC, black silicon, N-type be two-sided, the high-efficiency batteries such as silicon heterogenous (HJT) are opened Hair is got more and more attention.Wherein the high transformation efficiency of silicon based hetero-junction (HJT) solar cell, high open circuit voltage, low-temperature coefficient, No photo attenuation (LID) becomes most one of popular research direction without advantages such as electroluminescent decaying (PID), low making technology temperature.
In HJT solar cell, intrinsic amorphous silicon and doped amorphous silicon film lamination form surface of crystalline silicon good blunt Change, separates and collect photo-generated carrier, therefore, amorphous silicon membrane is the important component of HJT battery, structure and characteristic The most important amorphous silicon membrane passivating technique haveing excellent performance of transfer efficiency and stability to solar cell is to obtain efficient HJT The key technology of battery.
As shown in Figure 1, the electrode structure of the HJT cell piece for the prior art.Amorphous silicon intrinsic layer is as Window layer and blunt Change layer, it is desirable that have good passivation effect to crystal silicon surface, the light transmission rate for meeting itself again is high.Single layer is intrinsic non-at present Crystal silicon is unable to satisfy high transmittance and matches with well passivated effect, so that the photoelectric conversion of HJT solar battery be inhibited to imitate Rate.
Utility model content
Purpose of the utility model is to overcome the above-mentioned shortcomings and provide a kind of silicon/crystalline silicon heterojunction solars of lamination intrinsic layer Cell electrode structure solves the problems, such as that Window layer passivation is contradicted with optical absorption in HJT battery and technique is difficult to control, improves The photoelectric conversion efficiency of HJT solar battery.
Purpose of the utility model is realized as follows:
A kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer, it includes N-type crystalline silicon piece, the N The front of type crystal silicon chip is equipped with the face n amorphous silicon intrinsic layer first layer, the face the n amorphous silicon intrinsic layer second layer and the face n amorphous silicon sheet Layer third layer is levied, the back side of the N-type crystalline silicon piece is equipped with the face p amorphous silicon intrinsic layer；The face the n amorphous silicon intrinsic layer first layer It is deposited using pure silane, the face the n amorphous silicon intrinsic layer second layer is carried out using the mixed gas of silane and carbon dioxide Deposition, the face the n amorphous silicon intrinsic layer third layer are deposited using the mixed gas of silane, carbon dioxide and hydrogen；The n Amorphous silicon doped layer, the amorphous silicon doping are equipped on the outside of face amorphous silicon intrinsic layer third layer and the face p amorphous silicon intrinsic layer The outside of layer is equipped with TCO conductive film, and the outside of the TCO conductive film is equipped with several Ag electrodes.
A kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer, the face n amorphous silicon intrinsic layer first Layer with a thickness of 1 ~ 5nm, the face the n amorphous silicon intrinsic layer second layer with a thickness of 1 ~ 5nm, the face n amorphous silicon intrinsic layer the Three layers with a thickness of 2 ~ 6nm, overall thickness is 5 ~ 15nm.
A kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer, the face n amorphous silicon intrinsic layer first The band gap of layer is 1.4 ~ 1.6eV, and the band gap of the face the n amorphous silicon intrinsic layer second layer is 1.6 ~ 1.8eV, the face n amorphous silicon The band gap of intrinsic layer third layer is 1.5 ~ 1.7eV.
A kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer, the face n amorphous silicon intrinsic layer second The silane that uses of layer and carbon dioxide ratio is 10 ~ 50, the silane of the face the n amorphous silicon intrinsic layer third layer use, titanium dioxide In the mixed gas of carbon and hydrogen, the ratio of hydrogen and silane is 2 ~ 10, silane and carbon dioxide ratio is 2 ~ 10.
A kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer, the N-shaped amorphous silicon doped layer thickness For 4 ~ 8nm, the p-type amorphous silicon doped layer with a thickness of 7 ~ 15 nm.
A kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer, the TCO conductive film with a thickness of 70 ~ 110nm。
Compared with prior art, the utility model has the beneficial effects that
Light-receiving surface amorphous silicon intrinsic layer is used multiple deposition by the utility model, and each step is passed through different gaseous mixtures Body, the first step are passed through pure silane, and second step is passed through silane and carbon dioxide, and third step is passed through silane, carbon dioxide and hydrogen.It presses The amorphous silicon intrinsic layer of method preparation can effectively be passivated the transmission on crystal silicon surface and amorphous silicon intrinsic layer itself like this Rate is high, and the HJT solar battery open-circuit voltage and short circuit current of the utility model preparation are obviously improved, to promote battery Photoelectric conversion efficiency.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing HJT heterojunction solar battery.
Fig. 2 is the structural schematic diagram of the utility model HJT heterojunction solar battery.
Wherein:
N-type crystalline silicon piece 1, the face n amorphous silicon intrinsic layer first layer 2, the face the n amorphous silicon intrinsic layer second layer 3, the face n amorphous silicon Intrinsic layer third layer 4, the face p amorphous silicon intrinsic layer 5, amorphous silicon doped layer 6, TCO conductive film 7, Ag electrode 8.
Specific embodiment
Embodiment 1:
Referring to fig. 2, the utility model relates to a kind of lamination intrinsic layer silicon/crystalline silicon heterojunction solar battery electrode structure, It includes N-type crystalline silicon piece 1, and the front of the N-type crystalline silicon piece 1 is equipped with the face n amorphous silicon intrinsic layer first layer 2, the face n amorphous silicon The back side of the intrinsic layer second layer 3 and the face n amorphous silicon intrinsic layer third layer 4, the N-type crystalline silicon piece 1 is equipped with the face p amorphous silicon intrinsic Layer 5；
The face the n amorphous silicon intrinsic layer first layer 2 is deposited using pure silane, the face n amorphous silicon intrinsic layer second Layer 3 is deposited using the mixed gas of silane and carbon dioxide, and the ratio of silane and carbon dioxide is 30:1；The face n is non- Crystal silicon intrinsic layer third layer 4 is deposited using the mixed gas of silane, carbon dioxide and hydrogen, H2:SiH4:CO2=40:4: 1；
The outside of the face the n amorphous silicon intrinsic layer third layer 4 and the face p amorphous silicon intrinsic layer 5 is equipped with amorphous silicon doped layer 6, the outside of the amorphous silicon doped layer 6 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes 8.
The face the n amorphous silicon intrinsic layer first layer 2 with a thickness of 2nm, band gap 1.4eV；The face n amorphous silicon intrinsic layer The second layer 3 with a thickness of 2nm, band gap 1.7eV；The face the n amorphous silicon intrinsic layer third layer 4 with a thickness of 3nm, band gap is 1.6eV。
The utility model relates to a kind of lamination intrinsic layer silicon/crystalline silicon heterojunction solar battery electrode structure preparation side Method, including the following steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) positive intrinsic amorphous silicon layer being prepared by PECVD, front intrinsic amorphous silicon respectively uses three steps to deposit, and first Step is only passed through pure silane gas and forms the face n amorphous silicon intrinsic layer first layer 2, and second step is passed through silane and carbon dioxide gas mixture The face the n amorphous silicon intrinsic layer second layer 3 is formed, third step is passed through silane, carbon dioxide, hydrogen gas mixture and forms the face n amorphous silicon Intrinsic layer third layer 4；The face the n amorphous silicon intrinsic layer first layer 2 with a thickness of 2nm, band gap 1.4eV；The face n amorphous silicon The intrinsic layer second layer 3 with a thickness of 2nm, band gap 1.7eV；The face the n amorphous silicon intrinsic layer third layer 4 with a thickness of 3nm, band Gap is 1.6eV；
(3) intrinsic amorphous silicon layer that the back side is prepared by PECVD completes 7nm deposition using a step；
(4) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(5) N-shaped amorphous silicon doped layer is prepared using plasma enhanced chemical vapor deposition, with a thickness of 6nm；
(6) p-type amorphous silicon doped layer, overall thickness 10nm are prepared using plasma activated chemical vapour deposition；
(7) TCO conductive film 7 is deposited using RPD or PVD method, with a thickness of 100nm；
(8) positive back side Ag electrode 8 is formed by silk-screen printing；
(9) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 7；
(10) electrical property of test battery is carried out.
Embodiment 2:
Referring to fig. 2, the utility model relates to a kind of lamination intrinsic layer silicon/crystalline silicon heterojunction solar battery electrode structure, It includes N-type crystalline silicon piece 1, and the front of the N-type crystalline silicon piece 1 is equipped with the face n amorphous silicon intrinsic layer first layer 2, the face n amorphous silicon The back side of the intrinsic layer second layer 3 and the face n amorphous silicon intrinsic layer third layer 4, the N-type crystalline silicon piece 1 is equipped with the face p amorphous silicon intrinsic Layer 5；
The face the n amorphous silicon intrinsic layer first layer 2 is deposited using pure silane, the face n amorphous silicon intrinsic layer second Layer 3 is deposited using the mixed gas of silane and carbon dioxide, and the ratio of silane and carbon dioxide is 10:1；The face n is non- Crystal silicon intrinsic layer third layer 4 is deposited using the mixed gas of silane, carbon dioxide and hydrogen, H2:SiH4:CO2=8:4:2；
The outside of the face the n amorphous silicon intrinsic layer third layer 4 and the face p amorphous silicon intrinsic layer 5 is equipped with amorphous silicon doped layer 6, the outside of the amorphous silicon doped layer 6 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes 8.
The face the n amorphous silicon intrinsic layer first layer 2 with a thickness of 3nm, band gap 1.6eV；The face n amorphous silicon intrinsic layer The second layer 3 with a thickness of 2nm, band gap 1.8eV；The face the n amorphous silicon intrinsic layer third layer 4 with a thickness of 2nm, band gap is 1.7eV。
The utility model relates to a kind of lamination intrinsic layer silicon/crystalline silicon heterojunction solar battery electrode structure preparation side Method, including the following steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) positive intrinsic amorphous silicon layer being prepared by PECVD, front intrinsic amorphous silicon respectively uses three steps to deposit, and first Step is only passed through pure silane gas and forms the face n amorphous silicon intrinsic layer first layer 2, and second step is passed through silane and carbon dioxide gas mixture The face the n amorphous silicon intrinsic layer second layer 3 is formed, third step is passed through silane, carbon dioxide, hydrogen gas mixture and forms the face n amorphous silicon Intrinsic layer third layer 4；The face the n amorphous silicon intrinsic layer first layer 2 with a thickness of 3nm, band gap 1.6eV；The face n amorphous silicon The intrinsic layer second layer 3 with a thickness of 2nm, band gap 1.8eV；The face the n amorphous silicon intrinsic layer third layer 4 with a thickness of 2nm, band Gap is 1.7eV；
(3) intrinsic amorphous silicon layer that the back side is prepared by PECVD completes 7nm deposition using a step；
(4) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(5) N-shaped amorphous silicon doped layer is prepared using plasma enhanced chemical vapor deposition, with a thickness of 6nm；
(6) p-type amorphous silicon doped layer, overall thickness 10nm are prepared using plasma activated chemical vapour deposition；
(7) TCO conductive film 7 is deposited using RPD or PVD method, with a thickness of 100nm；
(8) positive back side Ag electrode 8 is formed by silk-screen printing；
(9) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 7；
(10) electrical property of test battery is carried out.
Embodiment 3:
Referring to fig. 2, the utility model relates to a kind of lamination intrinsic layer silicon/crystalline silicon heterojunction solar battery electrode structure, It includes N-type crystalline silicon piece 1, and the front of the N-type crystalline silicon piece 1 is equipped with the face n amorphous silicon intrinsic layer first layer 2, the face n amorphous silicon The back side of the intrinsic layer second layer 3 and the face n amorphous silicon intrinsic layer third layer 4, the N-type crystalline silicon piece 1 is equipped with the face p amorphous silicon intrinsic Layer 5；
The face the n amorphous silicon intrinsic layer first layer 2 is deposited using pure silane, the face n amorphous silicon intrinsic layer second Layer 3 is deposited using the mixed gas of silane and carbon dioxide, and the ratio of silane and carbon dioxide is 50:1；The face n is non- Crystal silicon intrinsic layer third layer 4 is deposited using the mixed gas of silane, carbon dioxide and hydrogen, H2:SiH4:CO2=60:10: 1；
The outside of the face the n amorphous silicon intrinsic layer third layer 4 and the face p amorphous silicon intrinsic layer 5 is equipped with amorphous silicon doped layer 6, the outside of the amorphous silicon doped layer 6 is equipped with TCO conductive film 7, and the outside of the TCO conductive film 7 is equipped with several Ag electrodes 8.
The face the n amorphous silicon intrinsic layer first layer 2 with a thickness of 2nm, band gap 1.5eV；The face n amorphous silicon intrinsic layer The second layer 3 with a thickness of 3nm, band gap 1.7eV；The face the n amorphous silicon intrinsic layer third layer 4 with a thickness of 3nm, band gap is 1.6eV。
The utility model relates to a kind of lamination intrinsic layer silicon/crystalline silicon heterojunction solar battery electrode structure preparation side Method, including the following steps:
(1) making herbs into wool, cleaning treatment are carried out to having a size of 156.75mm, with a thickness of the n type single crystal silicon piece 1 of 180um；
(2) positive intrinsic amorphous silicon layer being prepared by PECVD, front intrinsic amorphous silicon respectively uses three steps to deposit, and first Step is only passed through pure silane gas and forms the face n amorphous silicon intrinsic layer first layer 2, and second step is passed through silane and carbon dioxide gas mixture The face the n amorphous silicon intrinsic layer second layer 3 is formed, third step is passed through silane, carbon dioxide, hydrogen gas mixture and forms the face n amorphous silicon Intrinsic layer third layer 4；The face the n amorphous silicon intrinsic layer first layer 2 with a thickness of 2nm, band gap 1.5eV；The face n amorphous silicon The intrinsic layer second layer 3 with a thickness of 3nm, band gap 1.7eV；The face the n amorphous silicon intrinsic layer third layer 4 with a thickness of 3nm, band Gap is 1.6eV；
(3) intrinsic amorphous silicon layer that the back side is prepared by PECVD completes 7nm deposition using a step；
(4) choosing N-type amorphous silicon film is light-receiving surface doped layer；
(5) N-shaped amorphous silicon doped layer is prepared using plasma enhanced chemical vapor deposition, with a thickness of 6nm；
(6) p-type amorphous silicon doped layer, overall thickness 10nm are prepared using plasma activated chemical vapour deposition；
(7) TCO conductive film 7 is deposited using RPD or PVD method, with a thickness of 100nm；
(8) positive back side Ag electrode 8 is formed by silk-screen printing；
(9) solidification is so that form good Ohmic contact between silver grating line and TCO conductive film 7；
(10) electrical property of test battery is carried out.
By the embodiments of the present invention data and amorphous silicon intrinsic layer structure difference other parameters existing skill all the same The electrical property of art comparison, the utility model and the prior art is compared referring to following table, mainly from open-circuit voltage Voc, short circuit current Isc It is embodied with fill factor FF, the promotion of the solar battery unit for electrical property parameters of available the utility model makes solar battery Transfer efficiency Eta have absolutely promoted 1%.
Voc(mV) Isc(mA/cm2) FF(%) Eta(%)
The prior art 736.5 38.42 79.97 22.628
Embodiment 1 738.4 38.51 79.95 22.734
Embodiment 2 737.5 38.58 79.8 22.705
Embodiment 3 738 38.55 79.9 22.731
The above is only the specific application examples of the utility model, do not constitute any limit to the protection scope of the utility model System.Any technical scheme formed by adopting equivalent transformation or equivalent replacement, all fall within the utility model rights protection scope it It is interior.

Claims (6)

1. a kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer, it includes N-type crystalline silicon piece (1), special Sign is: the front of the N-type crystalline silicon piece (1) is equipped with the face n amorphous silicon intrinsic layer first layer (2), the face n amorphous silicon intrinsic layer the The back side of two layers (3) and the face n amorphous silicon intrinsic layer third layer (4), the N-type crystalline silicon piece (1) is equipped with the face p amorphous silicon intrinsic layer (5)；The face the n amorphous silicon intrinsic layer first layer (2) is deposited using pure silane, the face the n amorphous silicon intrinsic layer second layer (3) deposited using the mixed gas of silane and carbon dioxide, the face the n amorphous silicon intrinsic layer third layer (4) using silane, The mixed gas of carbon dioxide and hydrogen is deposited；The face the n amorphous silicon intrinsic layer third layer (4) and the face p amorphous silicon intrinsic It is equipped with amorphous silicon doped layer (6) on the outside of layer (5), the outside of the amorphous silicon doped layer (6) is equipped with TCO conductive film (7), institute The outside for stating TCO conductive film (7) is equipped with several Ag electrodes (8).
2. a kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer according to claim 1, feature Be: the face the n amorphous silicon intrinsic layer first layer (2) with a thickness of 1 ~ 5nm, the face the n amorphous silicon intrinsic layer second layer (3) With a thickness of 1 ~ 5nm, the face the n amorphous silicon intrinsic layer third layer (4) with a thickness of 2 ~ 6nm, overall thickness is 5 ~ 15nm.
3. a kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer according to claim 1, feature Be: the band gap of the face the n amorphous silicon intrinsic layer first layer (2) is 1.4 ~ 1.6eV, the face the n amorphous silicon intrinsic layer second layer (3) band gap is 1.6 ~ 1.8eV, and the band gap of the face the n amorphous silicon intrinsic layer third layer (4) is 1.5 ~ 1.7eV.
4. a kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer according to claim 1, feature Be: the silane and carbon dioxide ratio that the face the n amorphous silicon intrinsic layer second layer (3) uses is 10 ~ 50, the face n amorphous In the mixed gas of silane, carbon dioxide and hydrogen that silicon intrinsic layer third layer (4) uses, the ratio of hydrogen and silane is 2 ~ 10, silane and carbon dioxide ratio are 2 ~ 10.
5. a kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer according to claim 1, feature Be: the N-shaped amorphous silicon doped layer with a thickness of 4 ~ 8nm, the p-type amorphous silicon doped layer with a thickness of 7 ~ 15 nm.
6. a kind of silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer according to claim 1, feature Be: the TCO conductive film (7) is with a thickness of 70 ~ 110nm.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116646429A (en) * 2023-05-30 2023-08-25 眉山琏升光伏科技有限公司 Carbon dioxide gradient layering doping passivation amorphous silicon method and solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116646429A (en) * 2023-05-30 2023-08-25 眉山琏升光伏科技有限公司 Carbon dioxide gradient layering doping passivation amorphous silicon method and solar cell

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