CN208460736U - The front electrode screen structure of laser doping selective emitter solar battery - Google Patents
The front electrode screen structure of laser doping selective emitter solar battery Download PDFInfo
- Publication number
- CN208460736U CN208460736U CN201821232145.4U CN201821232145U CN208460736U CN 208460736 U CN208460736 U CN 208460736U CN 201821232145 U CN201821232145 U CN 201821232145U CN 208460736 U CN208460736 U CN 208460736U
- Authority
- CN
- China
- Prior art keywords
- several
- solar battery
- front electrode
- laser doping
- mark points
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of front electrode screen structures of laser doping selective emitter solar battery, several first Mark points are formed with by the heavily doped region of the positive laser doping in solar battery, several 2nd Mark points are arranged in main gate line on front electrode screen structure, and several 2nd Mark points and several first Mark points correspond；The alignment for realizing the front electrode screen structure and solar battery is corresponded by several 2nd Mark points and several first Mark points, keeps several secondary grid lines corresponding with the heavily doped area of the laser doping of the solar battery；So that during silk-screen printing prepares electrode, the heavily doped area of the laser doping of solar battery is located just in the secondary grid line of the front printing of solar battery, so that secondary grid line and heavily doped region form Ohmic contact, to improve the transfer efficiency of crystal silicon solar batteries.
Description
Technical field
The utility model relates to crystal silicon solar batteries technical field more particularly to a kind of laser doping selective emitters
The front electrode screen structure of solar battery.
Background technique
Solar energy resources are abundant, widely distributed, are most potential renewable energy.With global energy shortage and
The features such as the problems such as environmental pollution, becomes increasingly conspicuous, and solar energy power generating is cleaned because of it, is safe and convenient, efficient, it has also become the world
Various countries' common concern and the new industry given priority to.
Crystal-silicon solar cell and component are the semiconductor devices for converting solar energy into electric energy, and the size of device is directly determined
Fixed final generated output is needed to design and be researched and developed by battery process, using sharp to obtain higher battery conversion efficiency
Photodoping selective emitter solar battery front electrode halftone graphic structure, can effectively improve crystal silicon battery transfer efficiency, from
And improve the generated energy of unit area.
Utility model content
The utility model proposes a kind of front electrode screen structure of laser doping selective emitter solar battery,
To improve the transfer efficiency of crystal silicon solar batteries.
To solve the above-mentioned problems, the utility model provides the following technical solutions:
A kind of front electrode screen structure of laser doping selective emitter solar battery, the front electrode halftone knot
Structure is used to be arranged in screen printing electrode mask plate of the front as front electrode of solar battery, wherein the sun
The heavily doped region of the positive laser doping of energy battery is formed with several first Mark points；The front electrode screen structure includes net
Frame is provided with screen cloth in the screen frame, be provided on the screen cloth several main gate lines, several secondary grid lines, several anti-EL break grid structure with
And several 2nd Mark points；
It is parallel to each other, is parallel to each other between several secondary grid lines, and several main grids between several main gate lines
Line is mutually perpendicular to several secondary grid lines；
Several secondary grid lines are corresponding with the heavily doped region of positive laser doping of the solar battery；
Every main gate line is solid or hollow out polygonized structure；
Every anti-EL of row break grid structure include several anti-EL being arranged at intervals between secondary grid line break grid section, and anti-EL break grid section
It is vertical with secondary grid line, and be parallel to each other between the disconnected grid structure of anti-EL；
Several 2nd Mark points are arranged in main gate line, and several 2nd Mark points and described several first
Mark point corresponds；It is corresponded by several 2nd Mark points and several first Mark points and realizes front electricity
The alignment of polar net plate structure and solar battery makes the heavily doped of several secondary grid lines and the laser doping of the solar battery
Area is corresponding.
In one embodiment of the utility model, the quantity of the main gate line is 3-20 root.
In one embodiment of the utility model, the width of the main gate line is 0.1 to 2.5mm, the main gate line
Length is 100 to 165mm.
In one embodiment of the utility model, the quantity of the pair grid line is 80-200 root.
In one embodiment of the utility model, the width of the pair grid line is 10um to 200um, the pair grid line
Length is 10mm to 165mm.
In one embodiment of the utility model, the quantity of the disconnected grid structure of the anti-EL is 2-30 row.
In one embodiment of the utility model, the quantity of the first Mark point is 4-6, the 1 Mark point it is straight
Diameter is 0.2-1.2mm, and the quantity of the 2nd Mark point is 4-6, and the diameter of the 2nd Mark point is 0.2-1.2mm.
In one embodiment of the utility model, the shape of the solar battery is positive square piece or quadrangle with circular arc
Quasi- square piece, wherein the diameter of circular arc be greater than 150mm.
In one embodiment of the utility model, the substrate of the solar battery is monocrystalline silicon or polysilicon.
The utility model due to using the technology described above, is allowed to compared with prior art, have the advantages that following and product
Pole effect:
1) the front electrode screen structure of laser doping selective emitter solar battery provided by the utility model leads to
The heavily doped region crossed in the positive laser doping of solar battery is formed with several first Mark points, in front electrode halftone knot
Several 2nd Mark points are arranged in main gate line on structure, and several 2nd Mark points and several first Mark points one are a pair of
It answers；Corresponded by several 2nd Mark points and several first Mark points realize the front electrode screen structures with
The alignment of solar battery keeps several secondary grid lines corresponding with the heavily doped area of the laser doping of the solar battery；To
So that being located just on solar energy in the secondary grid line of the front printing of solar battery during silk-screen printing prepares electrode
The heavily doped area of the laser doping of battery, so that secondary grid line and heavily doped region form Ohmic contact, to improve crystal silicon solar batteries
Transfer efficiency.
Detailed description of the invention
Fig. 1 is the schematic diagram for the solar battery that the utility model embodiment is completed after laser doping selective emitter；
Fig. 2 is the schematic diagram of the solar cell front electrode screen structure of the utility model embodiment；
Fig. 3 is the partial enlarged view of the solar cell front electrode screen structure of the utility model embodiment.
In figure: 100- silicon wafer, the 1 Mark point of 101-, 200- front electrode halftone, 201- screen frame, 202- screen cloth, 203-
Main gate line, 204- pair grid line, the anti-EL of 205- disconnected grid structure, 300- front electrode halftone partial enlargement, the 2nd Mark point of 301-.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to the utility model proposes laser doping selective emitter solar
The front electrode screen structure of battery is described in further detail.According to following explanation and claims, the utility model
Advantages and features will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-accurate ratio, only
To convenient, lucidly aid illustration the utility model embodiment purpose.
Fig. 1-Fig. 3 is please referred to, as shown in Figure 1-Figure 3, the utility model embodiment provides a kind of laser doping selectivity
The front electrode screen structure of emitter solar battery, the front electrode screen structure in screen printing electrode for being arranged
In mask plate of the front of solar battery as front electrode, wherein the weight of the positive laser doping of the solar battery
Doped region is formed with several first Mark points 101, and specific first Mark point 101 is formed in the substrate (silicon wafer of solar battery
100) on；The front electrode screen structure 200 includes screen frame 201, screen cloth 202 is provided in the screen frame 201, on the screen cloth 202
It is provided with several main gate lines 203, several secondary grid lines 204, the disconnected grid structure 205 of several anti-EL and several 2nd Mark points 301；
It is parallel to each other, is parallel to each other between several secondary grid lines 204, and if described between several main gate lines 203
Dry main gate line 203 is mutually perpendicular to several secondary grid lines 204；
Several secondary grid lines 204 are corresponding with the heavily doped region of positive laser doping of the solar battery；
Every main gate line 203 is solid or hollow out polygonized structure；
The disconnected grid structure 205 of every anti-EL of row includes the disconnected grid section of several anti-EL being arranged at intervals between secondary grid line 204, and anti-EL
Disconnected grid section is vertical with secondary grid line 204, and is parallel to each other between the disconnected grid structure 205 of anti-EL；
Several 2nd Mark points 301 are arranged in main gate line 203, and several 2nd Mark points 301 with it is described
Several first Mark points 101 correspond；Pass through several 2nd Mark points 301 and several first Mark points 101 1
The one corresponding alignment for realizing the front electrode screen structure and solar battery makes several secondary grid lines 204 and the sun
The heavily doped area of the laser doping of energy battery is corresponding.So that during silk-screen printing prepares electrode, in solar battery
Front printing secondary grid line be located just on solar battery laser doping heavily doped area so that secondary grid line and heavily doped region
Ohmic contact is formed, to improve the transfer efficiency of crystal silicon solar batteries.
Wherein, the quantity of the main gate line 203 is 3-20 root.The width of the main gate line 203 is 0.1 to 2.5mm, described
The length of main gate line 203 is 100 to 165mm.
Wherein, the quantity of the secondary grid line 204 is 80-200 root.The width of the pair grid line 204 is 10um to 200um,
The length of the pair grid line 204 is 10mm to 165mm.
Wherein, the quantity of the disconnected grid structure 205 of the anti-EL is 2-30 row.
The quantity of the first Mark point 101 is 4-6, and the diameter of the 1 Mark point 101 is 0.2-1.2mm, described the
The quantity of 2 Mark points 301 is 4-6, and the diameter of the 2nd Mark point 301 is 0.2-1.2mm.
In one embodiment of the utility model, the shape of the solar battery is positive square piece or quadrangle with circular arc
Quasi- square piece, wherein the diameter of circular arc be greater than 150mm.Wherein, the substrate of solar battery is monocrystalline silicon or polysilicon.
The system of the front electrode screen structure of laser doping selective emitter solar battery provided by the utility model
Make method are as follows:
S1: carrying out laser doping on silicon wafer 100 after the diffusion, forms heavy doping in the region for needing to print grid line, together
When formed the 1 Mark point 101；
S2: in carrying out halftone manufacturing process, the 2nd Mark point 301 is formed in 203 region of main gate line of halftone；
S3: when preparing front electrode to silicon wafer progress silk-screen printing that the 1 Mark point 101 and the 2nd Mark point 301 is right
Standard makes to ensure that secondary grid line is printed on heavily doped regional center when silk-screen printing.
Using the above scheme, laser doping is carried out by silicon wafer 100 after the diffusion, selective emitter is formed, in shape
At the 1 Mark point 101 of formation while heavily doped area；When making halftone, the 2nd Mark point 301 is formed in main gate line；It is described
Mark point 101 and 301 position of the 2nd Mark point correspond, and in printing process, pass through the 1 Mark point 101 and second
Mark point 301 is precisely aligned, and secondary grid line 204 is made just to be printed on heavily doped area, forms good Ohmic contact, improves crystal silicon
Solar cell transfer efficiency.
Foregoing description is only the description to the utility model preferred embodiment, not to any limit of the scope of the utility model
Fixed, any change, the modification that the those of ordinary skill in the utility model field does according to the disclosure above content belong to right and want
Seek the protection scope of book.
Claims (9)
1. a kind of front electrode screen structure of laser doping selective emitter solar battery, which is characterized in that the front
Electrode screen structure is used to be arranged in screen printing electrode mask plate of the front as front electrode of solar battery,
Described in the heavily doped region of positive laser doping of solar battery be formed with several first Mark points；The front electrode halftone
Structure includes screen frame, is provided with screen cloth in the screen frame, and several main gate lines, several secondary grid lines, several anti-EL are provided on the screen cloth
Disconnected grid structure and several 2nd Mark points；
Be parallel to each other between several main gate lines, be parallel to each other between several secondary grid lines, and several main gate lines with
Several secondary grid lines are mutually perpendicular to；
Several secondary grid lines are corresponding with the heavily doped region of positive laser doping of the solar battery；
Every main gate line is solid or hollow out polygonized structure；
Every anti-EL of row grid structure of breaking includes that several anti-EL being arranged at intervals between secondary grid line break grid section, and anti-EL breaks grid section and secondary
Grid line is vertical, and is parallel to each other between the disconnected grid structure of anti-EL；
Several 2nd Mark points are arranged in main gate line, and several 2nd Mark points and several 1 Mark points
It corresponds；It corresponds by several 2nd Mark points and several first Mark points and realizes the front electrode halftone
The alignment of structure and solar battery makes the heavily doped area pair of the laser doping of several secondary grid lines and the solar battery
It answers.
2. the front electrode screen structure of laser doping selective emitter solar battery as described in claim 1, special
Sign is that the quantity of the main gate line is 3-20 root.
3. the front electrode screen structure of laser doping selective emitter solar battery as claimed in claim 1 or 2,
It is characterized in that, the width of the main gate line is 0.1 to 2.5mm, and the length of the main gate line is 100 to 165mm.
4. the front electrode screen structure of laser doping selective emitter solar battery as described in claim 1, special
Sign is that the quantity of the pair grid line is 80-200 root.
5. the front electrode screen structure of laser doping selective emitter solar battery as claimed in claim 1 or 2,
It is characterized in that, the width of the pair grid line is 10um to 200um, and the length of the pair grid line is 10mm to 165mm.
6. the front electrode screen structure of laser doping selective emitter solar battery as described in claim 1, special
Sign is that the quantity of the disconnected grid structure of the anti-EL is 2-30 row.
7. the front electrode screen structure of laser doping selective emitter solar battery as described in claim 1, special
Sign is that the quantity of the first Mark point is 4-6, and the diameter of the 1 Mark point is 0.2-1.2mm, the 2nd Mark point
Quantity be 4-6, the diameter of the 2nd Mark point is 0.2-1.2mm.
8. the front electrode screen structure of laser doping selective emitter solar battery as described in claim 1, special
Sign is, the shape of the solar battery is positive square piece or quadrangle has the quasi- square piece of circular arc, and wherein the diameter of circular arc is greater than
150mm。
9. the front electrode screen structure of laser doping selective emitter solar battery as described in claim 1, special
Sign is that the substrate of the solar battery is monocrystalline silicon or polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821232145.4U CN208460736U (en) | 2018-08-01 | 2018-08-01 | The front electrode screen structure of laser doping selective emitter solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821232145.4U CN208460736U (en) | 2018-08-01 | 2018-08-01 | The front electrode screen structure of laser doping selective emitter solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208460736U true CN208460736U (en) | 2019-02-01 |
Family
ID=65180721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821232145.4U Active CN208460736U (en) | 2018-08-01 | 2018-08-01 | The front electrode screen structure of laser doping selective emitter solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208460736U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312862A (en) * | 2020-04-08 | 2020-06-19 | 江苏润阳悦达光伏科技有限公司 | Alignment marking mode of selective emitter battery |
-
2018
- 2018-08-01 CN CN201821232145.4U patent/CN208460736U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312862A (en) * | 2020-04-08 | 2020-06-19 | 江苏润阳悦达光伏科技有限公司 | Alignment marking mode of selective emitter battery |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102184973B (en) | Positive electrode structure of solar battery plate | |
| CN102810578B (en) | A kind of solar cell and main gate line thereof | |
| CN203932074U (en) | A kind of electrode structure at right side of solar cell | |
| CN103840017B (en) | A kind of Graphene silica-based solar cell and manufacture method thereof | |
| CN202076274U (en) | Four-'hui' type positive electrode structure for solar battery | |
| CN202142542U (en) | X type positive electrode structure used for solar battery | |
| CN108766923A (en) | The front electrode screen structure and preparation method of solar cell | |
| CN105826409B (en) | A kind of preparation method of local back field N-type solar cell | |
| CN202736935U (en) | Solar cell and main grid line thereof | |
| CN101609848A (en) | The positive backplate and the manufacture method thereof of screen printing crystalline silicon solar cell | |
| CN110047952A (en) | A kind of solar battery Al grid line structure and preparation method thereof | |
| CN108922938A (en) | A kind of back contacts heterojunction solar battery and preparation method thereof | |
| CN104332522B (en) | Graphene double-junction solar battery and preparation method thereof | |
| CN208460736U (en) | The front electrode screen structure of laser doping selective emitter solar battery | |
| CN209071340U (en) | A kind of SE-PERC monocrystaline silicon solar cell | |
| CN108110087A (en) | A kind of preparation method of low line width MWT silicon solar cells | |
| CN105552145B (en) | A kind of crystal silicon solar batteries | |
| CN111370391A (en) | Novel SE Mark point pattern structure and preparation method thereof | |
| CN206820002U (en) | The grid line structure and solar battery sheet of a kind of solar cell | |
| CN106981528B (en) | Back electrode of P-type PERC double-sided solar cell and cell | |
| CN206685399U (en) | A kind of crystal silicon solar battery component | |
| CN106356414B (en) | A kind of crystal silicon solar battery secondary printing electrode structure at right side and preparation method thereof | |
| CN203150564U (en) | Solar cell front face grid line segmented cell piece | |
| CN203521432U (en) | Electrode structure of solar cell sheet | |
| CN111477718A (en) | Simple IBC battery electrode manufacturing process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210527 Address after: No. 589, Chang'an Street, Xi'an Aerospace base, Shaanxi Province, 710099 Patentee after: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Patentee after: Huanghe hydropower Xining Solar Power Co.,Ltd. Patentee after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee after: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee after: YELLOW RIVER HYDROPOWER PHOTOVOLTAIC INDUSTRY TECHNOLOGY Co.,Ltd. Patentee after: PHOTOVOLTAIC INDUSTRY TECHNOLOGY BRANCH OF QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Address before: 710100 Shaanxi Xi'an space base east Chang'an Avenue 589 Patentee before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Patentee before: XINING BRANCH OF SPIC XI'AN SOLAR POWER Co.,Ltd. Patentee before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee before: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee before: YELLOW RIVER HYDROPOWER PHOTOVOLTAIC INDUSTRY TECHNOLOGY Co.,Ltd. Patentee before: PHOTOVOLTAIC INDUSTRY TECHNOLOGY BRANCH OF QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. |