CN111312862A - Alignment marking mode of selective emitter battery - Google Patents
Alignment marking mode of selective emitter battery Download PDFInfo
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- CN111312862A CN111312862A CN202010269434.7A CN202010269434A CN111312862A CN 111312862 A CN111312862 A CN 111312862A CN 202010269434 A CN202010269434 A CN 202010269434A CN 111312862 A CN111312862 A CN 111312862A
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- mark points
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- grid line
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- 238000007639 printing Methods 0.000 claims abstract description 54
- 239000007787 solid Substances 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract description 2
- 238000007650 screen-printing Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a contraposition marking mode of a selective emitter battery, which comprises the step of carrying out printing contraposition by using laser mark points and printing mark points, and is characterized in that the printing mark points are arranged on a main grid line of a printing screen, the laser mark points are arranged at the positions, corresponding to the main grid line of the printing screen, on a battery silicon chip, and the laser mark points and the printing mark points are positioned in the same main grid line direction. According to the invention, the laser mark points and the screen printing mark points are both designed in the main grid line area, the laser mark points are designed in the hollow-out area of the main grid line, the printing mark points are designed in the solid area of the main grid line, the design of the positions of the two mark points is not required to be overlapped, the welding strip can cover the two mark points when the photovoltaic module is prepared, the appearance abnormity caused by the mark points can be completely avoided, the printing mark points are designed in the solid area of the main grid line and are shown in the hollow-out area during printing, compared with a conventional mode, the printing quantity of the mark points is reduced, the light absorption and utilization of the area of the mark points are increased, and the conversion efficiency of the battery is further improved.
Description
Technical Field
The invention relates to the field of solar cell manufacturing, in particular to a counterpoint marking mode of a selective emitter cell.
Background
In the current solar cell technology field, the application of high efficiency cell technology is continuously improved, for example, the conversion efficiency of a PERC high efficiency cell is continuously improved, and in the continuous superposition technology, one of the high efficiency cells can be doped by laser to prepare a selective emitter electrode (SE) cell. The preparation of selective emitter electrode cells has two main features: 1) the contact area of the metal grid line and the silicon wafer is a heavily doped area which can form good ohmic contact and improve the filling factor; 2) the light receiving area is a lightly doped area, short wave response can be improved, and minority carrier recombination is reduced due to low surface concentration, so that open-circuit voltage and short-circuit current are increased.
In the preparation process of a selective emitter electrode (SE) battery, an electrode is printed in a laser heavily doped region, for matching printing, 4 mark points are prepared when laser heavily doped is carried out on the front surface of the battery as shown in figure 1, 4 mark points are also prepared on a front printing screen as shown in figure 2, and accurate alignment is carried out through the mark points during printing. In the prior art, mark points are designed in regions except for thin grid lines and main grid lines, and the diameter of the printed mark points is 0.1mm larger than that of the mark points prepared on a battery silicon chip by laser, as shown in fig. 3 and 4, so that the printed mark points can cover the laser mark points, and therefore, a white point appears in the overlapped region of the two mark points, which not only influences the beauty of the battery, but also reduces the light absorption of the mark point region.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a method for alignment marking of a selective emitter cell, in which laser mark points and screen-printed mark points are both designed in a main gate line region, the laser mark points are designed in a hollow main gate line region, the printed mark points are designed in a solid main gate line region, the two mark point positions are not required to be overlapped, a solder strip covers the two mark points during the preparation of a photovoltaic module, so that the appearance abnormality caused by the mark points can be completely avoided, and the printed mark points are designed in the solid main gate line region and represent the hollow region during printing. The specific scheme is as follows:
a contraposition marking mode of a selective emitter battery comprises the step of carrying out printing contraposition by using laser mark points and printing mark points, and is characterized in that the printing mark points are arranged on main grid lines of a printing screen, the laser mark points are arranged on positions, corresponding to the main grid lines of the printing screen, on a battery silicon chip, and the laser mark points and the printing mark points are located on the same main grid line direction.
Further, the main grid line comprises a solid area and a hollow area, wherein the solid area and the hollow area are arranged on the main grid line in a staggered mode.
Further, the printed mark point is located in a solid area of the main grid line.
Further, the laser mark point is located in a hollow-out area corresponding to the main grid line.
Furthermore, the printing mark points are arranged on two main grid lines on the outermost side of the printing screen, and the laser mark points are correspondingly arranged on the two main grid lines which are the same as the printing mark points.
Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic diagram of a laser mark point on a battery silicon wafer in the prior art;
FIG. 2 is a schematic diagram of a prior art printing screen;
FIG. 3 is a schematic enlarged view of a part of a mark dot printed on a printing screen in the prior art;
FIG. 4 is a schematic diagram of a prior art battery after printing of electrodes;
FIG. 5 is a partially enlarged schematic view of a prior art battery mark point after electrode printing;
FIG. 6 is a schematic diagram of a laser mark point on a battery silicon wafer according to the present invention;
FIG. 7 is a schematic view of a printing screen according to the present invention;
FIG. 8 is a schematic enlarged view of a part of a mark dot printed on the printing screen of the present invention;
FIG. 9 is a schematic diagram of a battery of the present invention after printing of the electrodes;
FIG. 10 is an enlarged partial view of a mark point of a battery after printing of an electrode according to the present invention;
the method comprises the following steps of 1, 2, 3, 4, 5, 6, 61 and 62, wherein the laser mark points are laser mark points, the printing mark points are printing mark points, the overlapping mark points are overlapped mark points, the battery silicon chip is arranged on the battery silicon chip, the printing screen is arranged on the battery silicon chip, the main grid lines are arranged on the main grid lines, the hollow areas are arranged on the main grid lines, and the solid.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only.
Referring to fig. 6-10, the alignment marking method for the selective emitter cell in this embodiment includes performing printing alignment using laser mark points 1 and printing mark points 2, where the printing mark points 2 are disposed on the main gate lines 6 of the printing screen 5, the laser mark points 1 are disposed on the cell silicon wafer 4 at positions corresponding to the main gate lines 6 of the printing screen 5, and the laser mark points 1 and the printing mark points 2 are located in the same direction of the main gate lines 6. The bus bar 6 includes solid areas 62 and hollow areas 61, wherein the solid areas 62 and the hollow areas 61 are arranged on the bus bar 6 in a staggered manner. The printed mark dots 2 are located in the solid areas 62 of the bus bar 6. The laser mark point 1 is located in the hollow area 61 corresponding to the main grid line 6. The printing mark points 2 are arranged on two main grid lines 6 on the outermost side of the printing screen 5, and the laser mark points 1 are correspondingly arranged on the two main grid lines 6 which are the same as the printing mark points 2.
In this embodiment, as shown in fig. 7, there are five main gate lines 6 in the printing screen 5, each main gate line 6 has an 8-segment structure in which solid regions 61 and hollow-out spaces 62 are staggered, the print mark point 2 is located at the center of the solid regions at two ends of the first and fifth main gate lines 6, and is printed on the battery silicon wafer 4 to be an unprinted dot, and is located in the same vertical direction and at different horizontal heights as the laser mark point 1, and the laser mark point 1 is located at the center of the hollow-out regions 61 at two ends of the first and fifth main gate lines 6. After printing, the center positions of the solid areas 62 at the two ends of the first main grid line 6 and the fifth main grid line 6 are respectively provided with 2 unprinted circles, and the center positions of the hollow areas 61 at the outermost sides of the two ends are respectively provided with 2 laser processing mark circles. In this embodiment, the laser mark point 1 and the printed mark point 2 do not need to be overlapped and are both located in the main grid line 6 area, a welding strip can be completely covered when the photovoltaic module is manufactured, the printed mark point 2 is located in the solid main grid line 6 area 62, the printing amount can be reduced during printing, and the laser mark point 1 is located in the hollowed area 61 at the outermost end of the main grid line 6, so that damage to the laser mark point 1 area caused by welding contact can be avoided.
In other embodiments, laser mark points 1 and printed mark points 2 may be designed in other standard patterns, such as a cross shape.
It will be appreciated by persons skilled in the art that the embodiments of the invention described above and the accompanying drawings are only by way of example and are not limiting of the invention. The objects of the invention have been fully and effectively accomplished. The functional and structural principles of the present invention have been shown and described in the examples, and any variations or modifications of the embodiments of the present invention may be made without departing from the principles.
Claims (5)
1. A contraposition marking mode of a selective emitter battery comprises the step of carrying out printing contraposition by using laser mark points and printing mark points, and is characterized in that the printing mark points are arranged on main grid lines of a printing screen, the laser mark points are arranged on positions, corresponding to the main grid lines of the printing screen, on a battery silicon chip, and the laser mark points and the printing mark points are located on the same main grid line direction.
2. The selective emitter cell of claim 1, wherein the grid lines comprise solid areas and hollow areas, and the solid areas and the hollow areas are alternately arranged on the grid lines.
3. The selective emitter cell alignment mark pattern of claim 2, wherein the printed mark points are located on the solid areas of the bus bars.
4. The selective emitter cell alignment mark according to claim 3, wherein the laser mark point is located in a hollow region corresponding to the main grid line.
5. The selective emitter battery alignment mark method according to claim 1, wherein the printed mark points are disposed on two outermost main grid lines on the printing screen, and the laser mark points are correspondingly disposed on the same two main grid lines as the printed mark points.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010269434.7A CN111312862A (en) | 2020-04-08 | 2020-04-08 | Alignment marking mode of selective emitter battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010269434.7A CN111312862A (en) | 2020-04-08 | 2020-04-08 | Alignment marking mode of selective emitter battery |
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| Publication Number | Publication Date |
|---|---|
| CN111312862A true CN111312862A (en) | 2020-06-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010269434.7A Pending CN111312862A (en) | 2020-04-08 | 2020-04-08 | Alignment marking mode of selective emitter battery |
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| Country | Link |
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| CN (1) | CN111312862A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112428714A (en) * | 2020-10-21 | 2021-03-02 | 浙江爱旭太阳能科技有限公司 | Alignment method of electrode printing system of SE (selective emitter) laminated cell |
| CN112477459A (en) * | 2020-10-21 | 2021-03-12 | 浙江爱旭太阳能科技有限公司 | Alignment method of SE (selective emitter) laminated cell printing system |
| CN112510099A (en) * | 2020-11-30 | 2021-03-16 | 晶科能源科技（海宁）有限公司 | Solar cell module, solar cell and manufacturing method thereof |
| CN114914326A (en) * | 2021-02-09 | 2022-08-16 | 环晟光伏(江苏)有限公司 | Laser sintering method for solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000757A (en) * | 2012-09-27 | 2013-03-27 | 奥特斯维能源（太仓）有限公司 | SE (selective emitter) process convenient for printing alignment |
| CN203085566U (en) * | 2013-02-17 | 2013-07-24 | 英利集团有限公司 | Selective emitter solar battery and battery piece |
| CN105264302A (en) * | 2013-05-22 | 2016-01-20 | 三星Sdi株式会社 | Method for manufacturing solar cell having selective emitter and solar cell manufactured thereby |
| CN208460736U (en) * | 2018-08-01 | 2019-02-01 | 国家电投集团西安太阳能电力有限公司 | The front electrode screen structure of laser doping selective emitter solar battery |
| CN110459616A (en) * | 2018-10-17 | 2019-11-15 | 协鑫集成科技股份有限公司 | Silicon substrate, solar battery sheet and forming method thereof, printing screen plate |
-
2020
- 2020-04-08 CN CN202010269434.7A patent/CN111312862A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000757A (en) * | 2012-09-27 | 2013-03-27 | 奥特斯维能源（太仓）有限公司 | SE (selective emitter) process convenient for printing alignment |
| CN203085566U (en) * | 2013-02-17 | 2013-07-24 | 英利集团有限公司 | Selective emitter solar battery and battery piece |
| CN105264302A (en) * | 2013-05-22 | 2016-01-20 | 三星Sdi株式会社 | Method for manufacturing solar cell having selective emitter and solar cell manufactured thereby |
| CN208460736U (en) * | 2018-08-01 | 2019-02-01 | 国家电投集团西安太阳能电力有限公司 | The front electrode screen structure of laser doping selective emitter solar battery |
| CN110459616A (en) * | 2018-10-17 | 2019-11-15 | 协鑫集成科技股份有限公司 | Silicon substrate, solar battery sheet and forming method thereof, printing screen plate |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112428714A (en) * | 2020-10-21 | 2021-03-02 | 浙江爱旭太阳能科技有限公司 | Alignment method of electrode printing system of SE (selective emitter) laminated cell |
| CN112477459A (en) * | 2020-10-21 | 2021-03-12 | 浙江爱旭太阳能科技有限公司 | Alignment method of SE (selective emitter) laminated cell printing system |
| CN112428714B (en) * | 2020-10-21 | 2022-09-09 | 浙江爱旭太阳能科技有限公司 | Alignment method of electrode printing system of SE (selective emitter) laminated cell |
| CN112510099A (en) * | 2020-11-30 | 2021-03-16 | 晶科能源科技（海宁）有限公司 | Solar cell module, solar cell and manufacturing method thereof |
| CN112510099B (en) * | 2020-11-30 | 2022-05-20 | 晶科能源(海宁)有限公司 | Solar cell module, solar cell and manufacturing method thereof |
| CN114914326A (en) * | 2021-02-09 | 2022-08-16 | 环晟光伏(江苏)有限公司 | Laser sintering method for solar cell |
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Application publication date: 20200619 |
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| RJ01 | Rejection of invention patent application after publication |