CN210617560U - Solar cell printing alignment structure - Google Patents
Solar cell printing alignment structure Download PDFInfo
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- CN210617560U CN210617560U CN201822158794.0U CN201822158794U CN210617560U CN 210617560 U CN210617560 U CN 210617560U CN 201822158794 U CN201822158794 U CN 201822158794U CN 210617560 U CN210617560 U CN 210617560U
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The utility model discloses a solar cell printing alignment structure, which comprises 4 laser positioning points carved on the front surface of a silicon wafer and 4 printing positioning points of a hole on a silk screen printing plate, and is characterized in that the laser positioning points are solid, and the printing positioning points are annular; the laser positioning point pattern, the inner edge pattern of the printing positioning point and the outer edge pattern of the printing positioning point are similar patterns, and the similarity ratio of the outer edge pattern of the printing positioning point to the laser positioning point pattern and the similarity ratio of the laser positioning point pattern to the inner edge pattern of the printing positioning point are all larger than 1. Use the utility model discloses a solar cell printing alignment structure prints, at printing overprinting in-process, through the discovery skew problem that can be timely of the dislocation condition of the positive solid ring internal laser setpoint of printing back battery piece to accurate judgement takes place the kind of skew, provides clear and definite direction for follow-up skew correction, thereby reduces the inefficacy risk that the printing skew caused.
Description
Technical Field
The utility model relates to a solar cell makes technical field, in particular to selective emitter electrode solar cell's printing alignment technique.
Background
Solar cells are devices that directly convert light energy into electrical energy by the photoelectric or photochemical effect. The crystalline silicon solar cell has the highest conversion efficiency and the most mature technology, still occupies the leading position in large-scale application and industrial production, but becomes the influencing factor of the wide application of the crystalline silicon solar cell due to the high cost price of the crystalline silicon. In order to reduce the electricity consumption cost of the crystalline silicon solar cell, the cost of the manufacturing link is reduced, and the improvement of the conversion efficiency of the cell is also an important direction.
In recent years, technologies such as PERC and black silicon have become mass production processes, and the conversion efficiency of solar cells has been significantly improved. Following these two technologies, selective emitter electrode technology (SE) has evolved to become the next generation of high efficiency battery technology. The Selective Emitter (SE) crystalline silicon solar cell is characterized by that the contact position of metal grid line (electrode) and silicon wafer is heavily doped, and the position between the electrodes is lightly doped, so that said structure can effectively reduce diffusion layer composition, raise short-wave response of light ray, reduce contact resistance of front metal electrode and silicon, and can make short-circuit current, open-circuit voltage and filling factor be well improved so as to raise conversion efficiency. The selective emitter electrode (SE) technology is mainly implemented by two techniques, one is wet method technology through wax spraying mask to implement contact area heavy doping and non-contact area light doping, and the other is to form heavy doping in the laser-affected area and light doping in the non-laser-affected area through laser doping. With the continuous progress of the laser technology, the laser doping technology will replace the traditional wet SE technology of wax spraying mask, and the efficiency of the solar cell is promoted to be continuously improved.
In the manufacturing process of the SE solar cell, firstly, heavy doping is carried out on a silicon wafer with high sheet resistance diffused in a grid line region in a graphical mode through the laser effect, a series of etching and front and back surface passivation are carried out, then, a front silver grid line is printed on the laser doping region of the silicon wafer through a screen printing method, and then, a finished cell is formed after back surface printing, drying and sintering.
In order to realize that the front silver grid line is completely printed in the laser doping area, the conventional method is to engrave 4 positioning points on the front surface of the silicon wafer while performing laser doping, as shown in fig. 1(a), when printing the front silver grid line, a high-definition camera configured by a printer identifies the 4 positioning points by grabbing the center or edge profile of a laser positioning point circle, as shown in fig. 1(b), and finally, accurate alignment is realized in a overprinting mode. In order to improve the production utilization rate and reduce the shading loss of the cell, the positioning point of the laser is designed to be a solid circle with the diameter phi of 5mm, the positioning point of the printing alignment is designed to be a solid circle with the diameter phi of 6mm (generally larger than the diameter of the positioning point of the laser), and 4 solid round points with the same size appear on the surface of the printed cell, as shown in fig. 1 (c). In the overprinting process of the pattern, if the positioning point of the laser is completely overlapped with the center of the positioning point of the printed pattern, the positive silver grid line and the laser pattern can be completely aligned, but when the positioning point of the laser is not overlapped with the center of the positioning point of the printed pattern, a certain amount of dislocation is generated, and the deviation condition of each area of the cell slice needs to be largely collected through a microscope to carry out alignment correction. When the method is used for monitoring the offset condition, the test difficulty is high, the accuracy is low, the accuracy is poor, and certain difficulty is brought to industrialization.
In recent years, with the increasing maturity of technologies such as laser and printing, selective emitter electrode processes with industrial prospects begin to emerge, and advanced solar cell equipment manufacturers at home and abroad have mature production lines. Due to the difference of the laser, the transmission mechanism of the printing equipment and the alignment photographing system, the deformation of the screen printing plate can be increased along with the increase of the printing times, and the silver electrode and the laser grid line can be deviated due to the factors, so that the photoelectric conversion efficiency of the solar cell is influenced. Therefore, in order to accelerate the industrial application of the selective emitter electrode technology, higher precision requirements are put on the laser, the printing technology and the screen printing plate.
SUMMERY OF THE UTILITY MODEL
The utility model discloses to the problem that exists among the background art, provide a solar cell printing alignment graphic design for the quick accurate control and the alignment of real-time correction SE battery reduce the inefficacy risk that the printing skew caused simultaneously.
The technical scheme is as follows:
a solar cell printing alignment structure comprises 4 laser positioning points engraved on the front surface of a silicon wafer and 4 printing positioning points of a hole on a screen printing plate, and is characterized in that the laser positioning points are solid, and the printing positioning points are annular; the laser positioning point pattern, the inner edge pattern of the printing positioning point and the outer edge pattern of the printing positioning point are similar patterns, and the similarity ratio of the outer edge pattern of the printing positioning point to the laser positioning point pattern and the similarity ratio of the laser positioning point pattern to the inner edge pattern of the printing positioning point are all larger than 1.
Preferably, the similar figures are circular or square.
Preferably, the laser positioning point pattern is circular, and the diameter of the laser positioning point pattern is 2-10 mm; the diameter of the outer edge graph of the printing positioning point is 1-2mm larger than that of the laser positioning point graph, and the diameter of the inner edge graph of the printing positioning point is 1-2mm smaller than that of the laser positioning point graph.
Preferably, the diameter of the laser positioning point pattern is 5mm, the diameter of the outer edge pattern of the printing positioning point is 6mm, and the diameter of the inner edge pattern of the printing positioning point is 4 mm.
Preferably, the laser positioning point pattern is a square, and the side length is 2-10 mm; the side length of the outer edge graph of the printing positioning point is 1-2mm larger than that of the laser positioning point graph, and the side length of the inner edge graph of the printing positioning point is 1-2mm smaller than that of the laser positioning point graph.
Preferably, the side length of the laser positioning point graph is 5mm, the side length of the outer edge graph of the printing positioning point is 6mm, and the side length of the inner edge graph of the printing positioning point is 4 mm.
The beneficial effects of the utility model
Use the utility model discloses a solar cell printing alignment structure prints, at printing overprinting in-process, through the discovery skew problem that can be timely of the dislocation condition of the positive solid ring internal laser setpoint of printing back battery piece to accurate judgement takes place the kind of skew, provides clear and definite direction for follow-up skew correction, has played better additional role in large-scale volume production, thereby reduces the inefficacy risk that the printing skew caused.
Drawings
FIG. 1(a) is a diagram of a laser doping pattern in a selective emitter alignment structure in the prior art
FIG. 1(b) is a diagram showing a printed pattern in a selective emitter electrode alignment structure in the prior art
FIG. 1(c) is a diagram showing a pattern printed in a selective emitter electrode alignment structure in the prior art
FIG. 2(a) shows a laser doping pattern in a selective emitter electrode alignment structure according to the present invention
FIG. 2(b) is a diagram of a pattern printed in the selective emitter electrode alignment structure of the present invention
FIG. 2(c) is a diagram of the selective emitter electrode alignment structure of the present invention after printing
FIG. 3(a) shows the perfect alignment in the alignment pattern shift category of the present invention
FIG. 3(b) shows the x-direction shift in the alignment pattern shift pattern of the present invention
FIG. 3(c) shows the y-direction shift in the alignment pattern shift pattern of the present invention
FIG. 3(d) shows the angle shift in the alignment pattern shift pattern of the present invention
FIG. 4(a) shows the x-direction shift of the printed pattern after the shift of the alignment pattern according to the present invention
FIG. 4(b) shows the y-direction shift of the printed pattern after the shift of the alignment pattern according to the present invention
FIG. 4(c) shows the angle shift of the printed pattern after the offset of the alignment pattern according to the present invention
FIG. 4(d) shows the offset of the alignment pattern according to the present invention occurring in the printed pattern while x and y offsets occur
FIG. 4(e) shows the offset of the alignment pattern according to the present invention occurring in the printed pattern at the same time as the offset of x, y and angle
FIG. 4(f) shows that the alignment pattern of the present invention is offset-free in the printed pattern after offset printing
Detailed Description
The present invention will be further explained with reference to the following examples, but the scope of the present invention is not limited thereto:
with reference to fig. 2(a) - (c), a novel solar cell printing alignment pattern is designed to quickly and accurately monitor and correct the alignment of the SE cell in real time, while reducing the risk of failure due to printing offset. In this embodiment, 4 laser positioning points 2 are designed to be a solid circle with a diameter of Φ 5mm, a printing positioning point 3 for printing alignment is designed to be an outer diameter of Φ 6mm, and a solid ring with an inner diameter of Φ 4mm is as shown in fig. 2(b) (generally, the laser positioning point is larger than the inner diameter of the printing positioning point but smaller than the outer diameter of the printing positioning point), when a front silver grid line is printed, a high-definition camera configured by a printer identifies the 4 laser positioning points 2 by grabbing the center or edge contour of the laser positioning point circle, as shown in fig. 2(a), and then accurate alignment is realized by overprinting. The surface of the printed battery piece is provided with 4 solid circular rings 4 with the same size as shown in fig. 2(c), and the middle of each circular ring is completely filled with the laser positioning points 2.
In the overprinting process of the pattern, if x, y and angle deviation or combined deviation of the positive silver grid line and the laser doping pattern occurs, the deviation type can be accurately judged through the deviation position of the laser positioning point in the solid circular ring, as shown in fig. 3(a) - (d). FIG. 3(a) is a complete alignment, with the laser locating points filled in the solid rings; FIG. 3(b) shows that when the x-direction offset occurs, the laser positioning points are horizontally dislocated along the x-direction; FIG. 3(c) shows that the laser positioning points are horizontally dislocated along the y direction when the y direction shift occurs; when the angle of the laser positioning point is shifted in fig. 3(d), the laser positioning point is displaced along the x and y directions. FIGS. 4(a) - (f) are views showing the appearance of the offset of the anchor points and the positive silver grid lines when the offset occurs, and FIG. 4(a) is a printed image with x-direction misalignment corresponding to FIG. 3 (b); FIG. 4(b) is a printed pattern with y-direction misalignment corresponding to FIG. 3 (c); FIG. 4(c) is a diagram corresponding to FIG. 3(d) showing a printed pattern with an angular offset; if x, y and angle combined offset occurs, regular dislocation occurs along different directions as shown in fig. 4(d) and fig. 4 (e); FIG. 4(f) corresponds to FIG. 3(a) for a fully aligned post-printed pattern.
The type of the deviation can be rapidly and accurately judged according to the dislocation condition of the laser positioning point 2 in the solid ring 4 in the printed battery piece 1, a clear direction is provided for subsequent correction, and a good auxiliary effect is achieved in scale mass production.
According to the actual requirements, the cell printing alignment structure can be designed into a solid circle with the diameter phi of 1-10mm or a solid square with the side length of 1-10mm as the laser positioning point 2, and can be designed into a solid ring with the inner and outer diameters of 1-10mm respectively or a solid square ring with the inner and outer lengths of 1-10mm respectively as the printing positioning point 3. Wherein, the outer diameter size (or the outer edge length) of the printing positioning point 3 is 1-2mm larger than the inner diameter size (or the inner edge length) of the printing positioning point 3, and the diameter of the laser positioning point 2 is 1-2mm larger than the inner diameter size (or the inner edge length) of the printing positioning point.
The utility model discloses can be used for the counterpoint of list, polycrystal selectivity emitter electrode technique simultaneously for the alignment of quick accurate control and real-time correction SE battery.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications, additions and substitutions for the specific embodiments described herein may be made by those skilled in the art without departing from the spirit of the invention or exceeding the scope of the invention as defined in the accompanying claims.
Claims (6)
1. A solar cell printing alignment structure comprises 4 laser positioning points engraved on the front surface of a silicon wafer and 4 printing positioning points of a hole on a screen printing plate, and is characterized in that the laser positioning points are solid, and the printing positioning points are annular; the laser positioning point pattern, the inner edge pattern of the printing positioning point and the outer edge pattern of the printing positioning point are similar patterns, and the similarity ratio of the outer edge pattern of the printing positioning point to the laser positioning point pattern and the similarity ratio of the laser positioning point pattern to the inner edge pattern of the printing positioning point are all larger than 1.
2. The solar cell printing alignment structure of claim 1, wherein the similar patterns are circular or square.
3. The solar cell printing alignment structure of claim 2, wherein the laser positioning dot pattern is a circle with a diameter of 2-10 mm; the diameter of the outer edge graph of the printing positioning point is 1-2mm larger than that of the laser positioning point graph, and the diameter of the inner edge graph of the printing positioning point is 1-2mm smaller than that of the laser positioning point graph.
4. The solar cell printing alignment structure of claim 3, wherein the laser positioning dot pattern has a diameter of 5mm, the outer edge pattern of the printing positioning points has a diameter of 6mm, and the inner edge pattern of the printing positioning points has a diameter of 4 mm.
5. The solar cell printing alignment structure of claim 2, wherein the laser positioning dot pattern is square with a side length of 2-10 mm; the side length of the outer edge graph of the printing positioning point is 1-2mm larger than that of the laser positioning point graph, and the side length of the inner edge graph of the printing positioning point is 1-2mm smaller than that of the laser positioning point graph.
6. The solar cell printing alignment structure of claim 5, wherein the side length of the laser positioning point pattern is 5mm, the side length of the outer edge pattern of the printing positioning point is 6mm, and the side length of the inner edge pattern of the printing positioning point is 4 mm.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112428714A (en) * | 2020-10-21 | 2021-03-02 | 浙江爱旭太阳能科技有限公司 | Alignment method of electrode printing system of SE (selective emitter) laminated cell |
CN114801439A (en) * | 2021-01-29 | 2022-07-29 | 环晟光伏(江苏)有限公司 | Solar cell SE distribution printing screen structure and printing method thereof |
CN117012683A (en) * | 2023-10-07 | 2023-11-07 | 深圳黑晶光电技术有限公司 | Solar cell offset correction method |
CN117712232A (en) * | 2024-02-05 | 2024-03-15 | 晶科能源(海宁)有限公司 | Solar cell preparation method, solar cell and photovoltaic module thereof |
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2018
- 2018-12-21 CN CN201822158794.0U patent/CN210617560U/en active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112428714A (en) * | 2020-10-21 | 2021-03-02 | 浙江爱旭太阳能科技有限公司 | Alignment method of electrode printing system of SE (selective emitter) laminated cell |
CN112428714B (en) * | 2020-10-21 | 2022-09-09 | 浙江爱旭太阳能科技有限公司 | Alignment method of electrode printing system of SE (selective emitter) laminated cell |
CN114801439A (en) * | 2021-01-29 | 2022-07-29 | 环晟光伏(江苏)有限公司 | Solar cell SE distribution printing screen structure and printing method thereof |
CN117012683A (en) * | 2023-10-07 | 2023-11-07 | 深圳黑晶光电技术有限公司 | Solar cell offset correction method |
CN117012683B (en) * | 2023-10-07 | 2023-12-22 | 深圳黑晶光电技术有限公司 | Solar cell offset correction method |
CN117712232A (en) * | 2024-02-05 | 2024-03-15 | 晶科能源(海宁)有限公司 | Solar cell preparation method, solar cell and photovoltaic module thereof |
CN117712232B (en) * | 2024-02-05 | 2024-05-07 | 晶科能源(海宁)有限公司 | Solar cell preparation method, solar cell and photovoltaic module thereof |
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