CN117012683A - Solar cell offset correction method - Google Patents
Solar cell offset correction method Download PDFInfo
- Publication number
- CN117012683A CN117012683A CN202311278420.1A CN202311278420A CN117012683A CN 117012683 A CN117012683 A CN 117012683A CN 202311278420 A CN202311278420 A CN 202311278420A CN 117012683 A CN117012683 A CN 117012683A
- Authority
- CN
- China
- Prior art keywords
- offset
- sample
- measurement parameters
- preset template
- parameters
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 80
- 238000012937 correction Methods 0.000 title claims abstract description 48
- 238000005259 measurement Methods 0.000 claims abstract description 117
- 230000008569 process Effects 0.000 claims abstract description 48
- 238000012795 verification Methods 0.000 claims abstract description 43
- 238000012360 testing method Methods 0.000 claims abstract description 4
- 238000004364 calculation method Methods 0.000 claims description 66
- 238000012986 modification Methods 0.000 claims description 11
- 230000004048 modification Effects 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000010330 laser marking Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000013064 process characterization Methods 0.000 claims description 2
- 238000005305 interferometry Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 239000000523 sample Substances 0.000 description 120
- 238000012512 characterization method Methods 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The application discloses a solar cell offset correction method, which belongs to the technical field of solar cell processes and comprises the steps of receiving measurement parameters and laser measurement parameters of a sample cell and direction verification marks carried in the measurement parameters and the laser measurement parameters; determining a direction check mark and a corresponding sample battery direction offset; when the direction offset is greater than the set threshold, the stored preset template is automatically compared and the corresponding offset correction amount is returned, and the accuracy test is carried out according to the obtained parameter offset correction information, so that the original sample is subjected to offset correction. The scheme is not limited to the shape, the shape and the area volume of the sample battery, and the accuracy check and the offset correction can be performed after corresponding measurement parameters and measurement parameters are received. On the premise of obtaining the production of the high-performance solar battery, the production accuracy of the batch battery is optimized, and the cost and the energy consumption are greatly reduced.
Description
Technical Field
The application belongs to the technical field of solar cell processes, and particularly relates to a solar cell offset correction method.
Background
The first generation solar cell is represented by a crystalline silicon solar cell and comprises a monocrystalline silicon solar cell, a polycrystalline silicon solar cell and an amorphous silicon solar cell, the development of the solar cell is mature, the solar cell is widely applied to the commercial and civil fields, the second generation solar cell is mainly a compound semiconductor solar cell, and the solar cell has higher theoretical conversion efficiency, but has higher production cost, is difficult to civilian use and is generally only used in the fields of aerospace, military and the like. Third generation solar cells, also known as novel solar cells, mainly include inorganic, organic thin film solar cells, dye sensitized, quantum dot sensitized solar cells and perovskite solar cells. Solar cells of the past generation all need to be produced in batches, so that the solar cells are developed at a high speed corresponding to cities and are in great demand for the current market.
In research and practice of the prior art process, the present inventors found that, in the solar cell production process and the positioning process for each link in the production process in the development process, positioning abnormality occurs in the mass production mode due to different positioning algorithms of each apparatus, so that the cell cannot be normally produced.
Disclosure of Invention
In order to solve the above problems, the present application aims to provide a method for correcting the offset of a solar cell, which simplifies the structure and the manufacturing process and greatly reduces the cost and the energy consumption on the premise of obtaining a high-performance solar cell.
The application is realized by the following technical scheme:
the application discloses a solar cell offset correction method, which comprises the following steps:
the measuring parameters are used for representing process representing parameters of the sample battery and carrying the direction test mark of the sample battery;
the laser measurement parameters are used for representing process characterization parameters of the sample battery and carrying the direction verification mark of the sample battery;
the direction checking mark is carried by the measuring parameter and the laser measuring parameter and is used for inquiring and comparing a preset template group corresponding to the sample battery;
the preset template is used for recording and storing the measurement parameters and the laser measurement parameters of the sample battery, comprises the direction verification mark and is used for all the sample batteries according to the preset template;
the preset threshold is used for judging whether the direction offset of the sample battery is within the preset threshold range or not, and performing accuracy check on the measurement parameters and the laser measurement parameters of the sample battery according to the obtained direction offset;
preferably, the measured parameters and laser measurement parameters of the sample cell include, but are not limited to, sample length, width, offset angle, sample thickness, sample surface relief.
Preferably, the measuring method of the measuring parameters and the laser measuring parameters of the sample battery comprises microscope scanning, white light interference scanning, infrared laser ranging scanning, servo motor laser measuring, 3D modeling scanning and step measuring instrument.
Preferably, the direction verification mark comprises printing mark points, laser marking, wet etching, physical cutting and material coating.
Preferably, the sample cell comprises a monocrystalline silicon solar cell, a polycrystalline silicon solar cell, an amorphous silicon solar cell, an inorganic thin film cell, an organic thin film cell, a dye sensitized cell, a perovskite solar cell, a perovskite stacked cell.
The solar cell offset correction method disclosed by the application is applied to correction of a cell substrate in a mass production process of solar cells, and comprises the following steps of:
step 1: receiving measurement parameters and laser measurement parameters of a sample battery, wherein the measurement parameters and the laser measurement parameters carry direction verification marks;
step 2: determining a direction check mark of the sample battery, and inquiring and comparing a preset template group corresponding to the sample battery to obtain a corresponding direction offset of the direction check mark;
step 3: when the direction offset is determined to be larger than a preset threshold value of the sample battery direction check mark according to the direction offset, judging whether the direction offset is in a preset template range or not;
step 4: if the direction offset is out of the range of the preset template, feeding back a corresponding offset correction amount, and performing accuracy verification according to the obtained parameter offset correction information.
Step 5: and the precision verification judges the precision range of the precision verification to provide a modification scheme for the measurement parameters and the laser measurement parameters of the sample batteries according to the corresponding preset threshold values of the different sample batteries.
Compared with the prior art, the application has the following beneficial technical effects:
the solar cell-based process deviation correcting method disclosed by the application is not limited to the sample cell in form, and the process deviation occurring in the solar cell-based process can be used for receiving the measurement parameters and the laser measurement parameters of the sample cell and carrying the direction verification mark; inquiring and comparing a preset template group corresponding to the direction check mark according to the direction check mark of the sample battery; when the direction offset is determined to be larger than a preset threshold value of the sample battery direction verification mark according to the direction offset, judging whether the direction offset is in a preset template range or not; if the direction offset is out of the range of the preset template, feeding back a corresponding offset correction amount, and performing accuracy verification according to the obtained parameter offset correction information; and the precision verification judges the precision range of the sample battery according to the corresponding preset threshold value of different sample batteries, and provides a modification scheme for the measurement parameters and the laser measurement parameters of the sample battery.
The solar cell offset correction method disclosed by the application is prepared in the process flow of mass cell production, and has the advantages of relatively large cost, relatively large loss ratio and relatively large process difficulty, and simplified flow.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a solar cell offset correction method according to an embodiment of the present application.
Fig. 2 is an interactive flowchart of a solar cell offset correction method according to an embodiment of the present application.
Fig. 3 is a schematic diagram of offset calculation of a solar cell according to an embodiment of the present application.
Detailed Description
The application is further described below with reference to examples and drawings, which are not intended to limit the scope of the claims. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more; the terms "center," "longitudinal," "transverse," "upper," "lower," "left," "right," "inner," "outer," "front," "rear," "head," "tail," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used as references to orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate description of the application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be configured and operated in a particular orientation, and are not to be construed as limiting the application. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 1, the method for correcting solar cell offset may include:
in step S101, a measurement parameter and a laser measurement parameter of the sample battery are received, and the measurement parameter and the laser measurement parameter carry a direction verification mark.
The sample cell is not limited to monocrystalline silicon solar cells, polycrystalline silicon solar cells, amorphous silicon solar cells, inorganic thin film cells, organic thin film cells, dye sensitized cells, perovskite solar cells and perovskite stacked cells, and various types of solar cells are known to be usable at present. The measured parameters and the laser measured parameters of the sample cell can be quantitatively identified by the length, width, offset angle, sample thickness and sample surface relief information of the sample cell. Meanwhile, the measuring parameters of the sample battery and the measuring method of the laser measuring parameters can be accurately characterized through microscope scanning, white light interference scanning, infrared laser ranging scanning, servo motor laser measurement, 3D modeling scanning or step measuring instrument.
It should be noted that the measured parameters and the laser measured parameters of the sample cell may include one or more parameters at the same time, where the same cell measured parameters may be quantitatively characterized by using the length, width, offset angle, sample thickness and sample surface relief information at the same time. When the sample battery is quantitatively characterized, the measurement parameters and the laser measurement parameter information can simultaneously comprise one or more measurement modes, for example, the length of the sample battery can be simultaneously or independently measured by microscope scanning, infrared laser ranging scanning, servo motor laser measurement, 3D modeling scanning and the like. More accurate characterization and quantization parameter information can be flexibly set according to actual needs.
Meanwhile, the measurement parameters and the laser measurement parameters of the sample battery can simultaneously comprise one or more direction check marks, and the mark points can be printed, laser marked, wet etched, physical cut and material coated. The direction check mark can be a sample battery name, a sample battery unique mark, a sample battery limited azimuth and the like, can be composed of numbers, letters, characters, patterns and the like, is not limited in specific content, and more detailed direction check mark information can be flexibly set according to actual needs.
In step S102, a direction verification identifier of the sample battery is determined, and a preset template group corresponding to the sample battery is queried and compared to obtain a direction offset corresponding to the direction verification identifier.
In order to correct the effective process offset of each sample battery, the preset template group can be mapped and compared through the direction check marks carried by the sample battery, the measurement parameters carried by the sample battery and the different direction check marks of the laser measurement parameters are judged, the local preset template group is inquired, and the mapping relation between the stored preset template and the direction check marks is established.
The preset template group stores templates, and can control query comparison, for example, whether the preset template group has a direction check mark carried by a measurement parameter and a laser measurement parameter of a sample battery corresponding to the existing template or not can be judged, if the preset template group has the preset template, the direction offset corresponding to the direction check mark can be immediately obtained, and if the preset template group does not have the preset template, the preset template can be updated, created and replaced based on the direction check mark, and the preset template is added into the preset template group.
After the preset template group inquires and compares the direction check mark carried by the measurement parameter and the laser measurement parameter, calculating and obtaining the corresponding direction offset of the corresponding direction check mark. And then obtaining a corresponding direction offset, namely the process direction offset of the current sample battery, recording the corresponding direction offset in a preset template, selectively updating, creating and replacing the preset template based on the direction verification mark, and adding the preset template into a preset template group.
Based on a preset template, the system comprises parameter information such as measurement parameters, laser measurement parameters, direction verification marks, deflection angles and the like. One of the sample cells is specifically described with reference to FIG. 3, and is calculated, for example, by measuring parameters d1, d2, …, d8 and measuring parameters L1, L2, L3, L4 by laser light, as follows
，
Can obtain the deflection angle theta 1 ，θ 2 ，θ 3 ，θ 4 . And establishing a preset template through the three parameters.
In step S103, when it is determined that the direction deviation amount is greater than the preset threshold value of the sample battery direction check flag, it is determined whether the direction deviation amount is in the preset template range.
And when the direction offset is determined to be larger than the preset threshold value of the sample battery direction check mark according to the direction offset, if the direction offset is smaller than the preset threshold value of the sample battery direction check mark, whether the direction offset is in the preset template range is not continuously judged. For example, when the query contrast direction offset is less than a preset threshold, it may be determined that the sample cell process aspect is normal and no process offset occurs; the preset threshold value of the direction offset is flexibly adjusted according to the actual form of the sample battery, and the battery type, the battery form and the battery composition all affect the setting of the preset template and the preset threshold value, and the specific content is not limited herein.
When the direction offset is greater than a preset threshold of the sample battery direction check mark, it is further necessary to determine whether the direction offset is within a preset template range. If the direction offset is greater than the preset threshold value, and the calculation of the direction offset causes the whole process to exceed the range of the budget template, setting errors can exist for the original preset template, and the measurement parameters, the laser measurement number and the corresponding direction verification mark of the template need to be reset; or determining that the deviation exists in the new sample battery process compared with the standard sample battery process, wherein the standard sample battery process is flexibly adjusted according to the actual form of the sample battery, and the calculation of the direction offset is influenced by the battery type, the battery form and the battery composition.
Specifically, for the calculation of the directional offset, an example is given here, in which a specific explanation is given for one of the samples in fig. 3, for example, by measuring the laser measurement parameters d1, d2, …, d8, and the measurement parameters L1, L2, L3, L4, the deflection angle θ can be obtained 1 ，θ 2 ，θ 3 ，θ 4 。
The marks x, y, z are the lateral offset, the longitudinal offset and the offset angle, respectively, which represent the degree of offset of the printed pattern relative to the substrate, which represent the direction following the accepted mathematical prescription
,
It is expressed by the measured value
，
x, y are expressed as measured values
,
The above is merely a flow of calculating the directional shift of the battery in the form of the sample shown in fig. 3, and a further calculation method is not limited to this.
In step S104, if the direction offset is outside the preset template range, the corresponding offset correction amount is fed back, and the accuracy is verified according to the obtained parameter offset correction information.
When the deviation amount is determined and judged to be outside the range of the preset template according to the deviation amount, a certain deviation difference value exists between the deviation amount and the preset template, if the current deviation difference value is too large and exceeds the range of the preset template, the deviation correction amount for the sample battery exists, and the whole process deviation of the sample battery compared with the preset template can be determined. After the offset correction amount is determined, accuracy verification is performed by the offset correction information of the measurement parameter and the laser measurement parameter.
When the method needs to be described, one or more specific calculation methods exist in the mode of accuracy check, accuracy calculation is performed through offset correction, and specific accuracy check values of the current process for the current state of the sample battery are determined.
In step S105, the accuracy check determines that the accuracy range is a modification scheme for the measurement parameters and the laser measurement parameters of the sample battery according to the corresponding preset threshold values of the sample batteries.
Specifically, the accuracy calibration may be preset to a preset threshold, where for the sample battery for which the accuracy calibration is performed for the first time, no preset template is entered into the preset template group on the premise of the sample battery for which the accuracy calibration is not performed, the preset threshold needs to be preset in advance according to the sample battery, and the preset needs to be flexibly set according to actual needs, and specific content is not limited herein. After the accuracy verification is finished, an adjustment reference standard for the sample battery is provided through the accuracy verification, and a corresponding modification scheme is provided for process offset correction of the sample battery by combining a result of the accuracy verification and a result of the direction offset, wherein the modification scheme comprises length, width, offset angle, sample thickness and sample surface relief.
For the accuracy check, one of the sample cells is specifically described with reference to fig. 3. Obtaining deflection angle θ by measuring parameters d1, d2, …, d8 and measuring parameters L1, L2, L3, L4 by laser 1 ，θ 2 ，θ 3 ，θ 4 . In practical situations, the method is limited by mechanical precision, instrument precision, measurement operation precision and the like, and certain errors exist in measured values, namely a precision checking mode is needed to determine the feasibility of a scheme, and meanwhile, an adjustment reference standard is provided for a sample battery. Definition of the definition
Wherein alpha is 1 ，α 2 Is the amount of quadrature error, beta 1 ，β 2 Is the amount of parallel error.
η 1 ，η 2 As the distance accuracy check value omega 1 ，ω 2 For the angle accuracy check value, the condition needs to be met, namely, the measurement data is reliable, the scheme is completely feasible, and the angle accuracy check value can be completely used as a reference standard of a sample battery. Specifically, also exemplified herein for a threshold range, generally ω 1 ，ω 2 The offset angle is within 5 ° and the error ratio is within 1%, i.e. the angular error amount is typically less than 0.05 °. It should be emphasized again that the threshold range should be manually fine-tuned if necessary according to the conventional experimental conditions, the precision of the instrument and equipment, the regularity of the product, the machine repeatability, the manual operation errors, etc. for different equipment conditions.
For convenience of description, in the embodiment of the present application, only the examples are described for convenience of description, and it should not be understood that the sample battery type, the measurement parameters, the laser measurement parameters and the accompanying direction check marks and direction offsets included therein, and the offset correction amounts and the accuracy check results included therein, but the process of correcting the process offset is similar regardless of the number of measurement objects and measurement parameters, and can be understood according to the examples.
For further detailed description, in the embodiment of the present application, the whole calculation module and the accuracy verification module will be described in detail, and the whole interaction flow will be further described.
Referring to fig. 2, fig. 2 is an interactive flowchart of a solar cell offset correction method according to an embodiment of the present application, where the flowchart of the method shows a detailed description of a solar cell process offset correction method according to an embodiment of the present application, specifically:
201. and carrying out measurement operation on the sample battery, and recording measurement parameters by combining the operation requirement of the calculation module.
When the input of the measurement parameters is required to be executed, the parameter input sequence can be freely adjusted, the measurement parameters required by the sample battery can be freely selected under the condition of the calculation requirement of the calculation module, meanwhile, the parameters are not limited to a measurement mode and a measurement tool, the measurement parameters can be parameter symbols or parameter mathematical expressions and the like, and the measurement parameters can be composed of numbers, letters, special mathematical symbols and the like, and the specific content is not limited herein.
202. And (3) performing measurement operation on the sample battery, and recording laser measurement parameters by combining the operation requirement of the calculation module.
When the input of the laser measurement parameters is needed to be executed, the input sequence of the parameters can be freely adjusted, the laser measurement parameters needed by the sample battery can be freely selected under the condition of the calculation requirement of the calculation module, meanwhile, the parameters are not limited to a measurement mode and a measurement tool, the measurement parameters can be parameter symbols or parameter mathematical expression and the like, and the parameters can be composed of numbers, letters, special mathematical symbols and the like, and the specific content is not limited herein. When the laser calibration method is needed to be described, the laser measurement parameters also represent a series of application scenes such as the calculation module and the like, and the laser measurement method is also suitable for laser calibration scenes such as long-wave laser, short-wave laser, picosecond femtosecond laser and the like.
203. After the measurement parameters 201 and the laser measurement parameters 202 are received, the direction verification marks carried by the measurement parameters 201 and the laser measurement parameters 202 are determined, and the direction offset is calculated through the calculation module.
After the calculation module receives the measurement parameters and the laser measurement parameters, the direction verification marks can be extracted from the measurement parameters and the laser measurement parameters, parameter operation is carried out according to the calculation requirements of the calculation module, and the operation result can obtain the direction offset of the corresponding direction according to the parameters and the direction verification marks.
It should be noted that, when the measurement parameter and the laser measurement parameter and the corresponding direction check mark enter the calculation module to budget, if the calculation module fails to iterate, the calculation is abnormal and/or the calculation logic is wrong, the calculation module directly stops the calculation and requests to re-input the measurement parameter and the laser measurement parameter and the corresponding direction check mark. For example, when the parameter requirement of the calculation module on the current sample battery is length and width information, and the two information include direction check marks, if the measurement parameter and the laser measurement parameter do not include the parameter requirement of the calculation module on the current sample battery, the calculation module is interrupted and requires to input the parameter of the current sample battery again; the measurement parameters and the laser measurement parameters are assumed to be input according to the parameter requirement of the calculation module on the current sample battery, and the corresponding direction verification mark is also included, however, if calculation abnormality and/or calculation logic error occur due to parameter error or measurement error, the parameter of the current sample battery is immediately interrupted and required to be input again, and error prompt occurs due to the calculation formula and calculation flow existing in the calculation module.
204. And collecting the recorded direction check mark and the direction offset obtained through the calculation module, and comparing the calculation module result by the preset template group.
The preset templates of different types of sample batteries exist in the preset template group, and the adding and modifying modes of the preset templates can be realized by carrying out first measurement and determination on the brand-new type sample batteries and loading the sample batteries through a calculation module, carrying out measurement and determination on the brand-new process of the sample batteries and updating the sample batteries through the calculation module, carrying out multiple times of loading and correcting the sample batteries through the calculation module, and carrying out adjustment on individual parameters and template structures through manual processing. For example, when the printing process of a sample battery is optimally adjusted, the surface relief information of the sample is directly affected, the parameter measurement and characterization are performed through microscope scanning, the surface relief 3D reduction is performed through laser scanning, the direction check mark existing in the selected characterization result is sleeved into the calculation module for calculation, a brand new template is obtained, and meanwhile, the old template is updated to achieve the purpose of replacing the template of the old process by the new process or reestablishing a new process preset template and uploading the new process preset template to the preset template group.
And carrying out mathematical operation on the measurement parameters and the laser measurement parameters through a calculation module to obtain corresponding direction check marks and direction offset, searching corresponding preset templates from the preset template group through comparison of the direction check marks, and importing and comparing the direction offset with the preset templates.
205. After a preset template corresponding to the sample battery is obtained, the direction offset is imported into the preset template, and the comparison of the direction offset and the preset template range is inquired.
After the type of the sample battery, the calculation module parameters, the direction check mark and the direction offset are determined, the direction offset correction quantity is led into a preset template, and the comparison of the direction offset and the preset template range is inquired. The preset template has a certain limit on the direction offset, and the limit range can be determined by the morphology of the sample battery or the requirement of the process, and the limit range is not defined. For example, the battery processes can include laser marking, wet etching, physical cutting, material coating, etc., and each battery process has respective requirements for limiting the limiting range of the direction offset and even limiting the precision, and can be respectively preset and stored for taking at any time when the preset template is set. It should be noted that the comparison of the preset template range is only one current reference value, the reference value still needs to be subjected to more detailed parameter correction such as repeated calculation, accuracy verification and the like, and the correction of the directional offset of the sample battery can not be directly performed after the comparison of the preset template range is adopted independently.
Because of the precision requirement of the process, repeated calculation of the return offset must be performed at least once to improve the calculation accuracy, if the direction offset meets the requirement of the first result of the preset template range.
206. After inquiring and comparing the preset template range, the offset is returned to the calculation module at least once.
After the preset template range is queried and compared, the offset is returned, wherein the return flow is carried out at least once in the calculation of any new sample battery. It should be noted that, at least one pass-back calculation will not increase excessive operation time, and the sample battery or the brand-new battery technology for testing for the first time can be effectively checked through the pass-back, and because the brand-new technology is possible to have the situation that mathematical operation is not completely matched under the condition of the same sample battery or the same base template, the operation error of the part can be corrected through at least one pass-back, thereby improving operation accuracy and result scientificity.
207. Obtaining the result of inquiring the budget template and comparing the offset with the preset template range, and recalculating
And acquiring the offset correction quantity which is returned to the calculation module, reintroducing the offset correction quantity, calling a preset template of the sample battery from the preset template group, and carrying out calculation again. The calculation uses the same calculation template, the same calculation precision and the same calculation logic compared with the first calculation, but the final calculation result is changed based on the brand new offset correction amount. And the calculation result is subjected to budget template comparison again, and the next selection is performed according to the comparison result. For example, if the calculation result cannot pass the comparison of the budget template and exceeds the range value of the budget template, the calculation result needs to be transmitted back to the calculation module again and corrected again for calculation; if the calculation result is in the range value of the budget template through the comparison of the budget template, the next verification can be performed without the need of carrying out the budget template comparison again.
208. And returning at least once and completing operation, and comparing the offset correction quantity of the parameter offset correction quantity with a preset template to ensure that the offset correction quantity is in a preset template range and checking the parameter accuracy by the parameter offset correction information.
And when the direction offset calculated at least twice is compared with the budget template, if the calculation result is within the range value of the budget template through the comparison of the budget template, the parameter offset correction information is subjected to parameter precision verification. The parameter deviation correction information is only the measurement parameters, laser measurement parameters, direction check marks, direction deviation correction amounts and the like of the sample battery. And (3) checking the parameter precision of the parameters, and finally obtaining the precision value of the current sample battery in the sample battery process, wherein the precision value is not an actual modifiable value, is only a reference value, and can be comprehensively evaluated through the reference value.
209. And obtaining a verification reference value after the accuracy verification is carried out, and judging an accuracy verification threshold value.
When the final check reference value is obtained through accuracy check, the reference value is subjected to accuracy check threshold judgment, the accuracy value is only the reference value, and if the accuracy check reference value is smaller than the accuracy check threshold, the parameter deviation correction information is correct, so that the actual sample adjustment can be directly performed. It should be noted that, the accuracy check threshold value can be freely adjusted manually according to the accuracy of the sample battery and the sample battery process. For example, the sample length width accuracy requirement is 0.1 μm, then the accuracy check can be set to 0.05; if the laser cutting precision is required to be 0.01 mu m, the precision check can be set to be 0.005; if the sample material coating accuracy is required to be 0.001 μm, the accuracy check can be set to 0.0005. The above examples are only single examples, and the actual precision requirement and the precision verification setting can be flexibly set according to the actual needs, and the specific content is not limited herein.
210. When the accuracy check threshold value is judged to pass, the parameter deviation correction information is in the threshold value range, namely the sample battery modification scheme can be returned, and the battery process can be directly adjusted.
And the accuracy check threshold value is judged to pass through, and the parameter deviation correction information is in the threshold value range, so that the sample battery modification scheme can be returned. The sample battery modification scheme is proved to be in line with the current sample battery form and the current sample battery process after the accuracy check threshold value is judged by the information. The measuring parameters, the laser measuring parameters and the direction deviation correction amount contained in the scheme can be directly applied to solar cell processes such as screen printing, laser scanning, infrared laser cutting and material coating, the process flow arrangement can be greatly simplified through the process deviation correction, the process flow inspection is shortened, the rechecking time is shortened, the process flow productivity is improved, the process flow production precision is improved, and finally the whole process flow production of the solar cell is facilitated. It should be noted that, if the morphology of the sample battery is not changed, the preset templates recorded by the preset template group under the condition that the production process of the sample battery is not changed, including the precision check reference value and the sample battery reference scheme, are all repeatedly cited.
It should be noted that the foregoing description is only one of the embodiments of the present application, and all equivalent modifications of the system described in the present application are included in the scope of the present application. Those skilled in the art can substitute the described specific examples in a similar way without departing from the structure of the application or exceeding the scope of the application as defined by the claims, all falling within the scope of protection of the application.
Claims (11)
1. A method for correcting solar cell offset, comprising:
receiving measurement parameters and laser measurement parameters of a sample battery, wherein the measurement parameters and the laser measurement parameters carry direction verification marks;
determining a direction check mark of a sample battery, inquiring and comparing a preset template group corresponding to the direction check mark, and obtaining a corresponding direction offset of the direction check mark;
when the direction offset is determined to be larger than a preset threshold value corresponding to the sample battery according to the direction offset, judging whether the direction offset is in a preset template range or not;
if the direction offset is out of the range of the preset template, feeding back a corresponding offset correction amount, and performing accuracy verification according to the obtained parameter offset correction information;
and the precision verification judges the precision range of the precision verification to provide a modification scheme for the measurement parameters and the laser measurement parameters of the sample batteries according to the corresponding preset threshold values of the different sample batteries.
2. The method of claim 1, wherein the step of determining whether the directional offset is within a predetermined template range comprises:
leading the known measurement parameters and laser measurement parameters of the sample battery into a preset template range;
and carrying out process flow calculation according to the acquired measurement parameters and the laser measurement parameters, and obtaining corresponding direction offset to compare the preset threshold value.
3. The method of claim 1, wherein the measured and laser measured parameters of the sample cell further comprise length, width, offset angle, sample thickness, and sample surface relief information of the sample cell.
4. The method of claim 1, wherein the method of measuring the measured parameters and laser measured parameters of the sample cell comprises a microscope scan, a white light interferometry scan, an infrared laser ranging scan, a servo motor laser measurement, a 3D modeling scan, or a step gauge.
5. The method of claim 1, wherein the sample cell comprises a monocrystalline silicon solar cell, a polycrystalline silicon solar cell, an amorphous silicon solar cell, an inorganic thin film cell, an organic thin film cell, a dye sensitized cell, a perovskite solar cell, or a perovskite stacked cell.
6. The method for correcting solar cell offset according to any one of claims 1 to 5, further comprising, after the steps of querying and determining the preset template group corresponding to the direction check mark:
when the direction verification mark is in the preset template group, the preset template is not required to be set, and a preset template corresponding to the sample battery is obtained from a local preset template group;
and calculating the direction offset according to the obtained preset template corresponding to the sample battery.
7. The method for correcting solar cell offset according to claim 6, further comprising, after the step of querying and determining the preset template group corresponding to the direction check mark:
when the direction checking mark is not in the preset template group, the preset template is set first,
and calculating the direction offset according to the obtained preset template corresponding to the sample battery.
8. The method for correcting solar cell misalignment as claimed in claim 7, wherein,
the measuring parameters are used for representing process representing parameters of the sample battery and carrying a direction test mark of the sample battery;
the laser measurement parameters are used for representing process characterization parameters of the sample battery and carrying a direction verification mark of the sample battery;
the direction checking mark, the measuring parameter and the mark carried by the laser measuring parameter are used for inquiring and comparing a preset template group corresponding to the sample battery;
the preset template is used for recording and storing the measurement parameters and the laser measurement parameters of the sample battery, containing the direction verification mark and being used for all the sample batteries according to the preset template;
the preset threshold is used for judging whether the direction offset of the sample battery is within the preset threshold range or not, and performing accuracy verification according to the obtained direction offset and the measurement parameters and the laser measurement parameters of the sample battery;
and the precision verification is used for judging that the corresponding preset threshold values exist in different sample batteries, and the precision range is used for providing a modification scheme for the measurement parameters and the laser measurement parameters of the sample batteries.
9. The method of claim 7, wherein the direction check mark comprises printed mark points, laser marking, wet etching, physical cutting, and material coating information.
10. The method of correcting for solar cell misalignment according to claim 7 wherein the creation of the preset template comprises the calculation of the following formula by laser measurement parameters d1, d2, …, d8 and measurement parameters L1, L2, L3, L4
，
Can obtain the deflection angle theta 1 ，θ 2 ，θ 3 ，θ 4 And establishing a preset template through the three parameters.
11. The method of correcting for solar cell misalignment according to claim 7, wherein the deflection angle θ is obtained by measuring laser measurement parameters d1, d2, …, d8 and measurement parameters L1, L2, L3, L4 1 ，θ 2 ，θ 3 ，θ 4 The x, y, θ are the lateral offset, the longitudinal offset, and the offset angle, respectively, which represent the degree of offset of the printed pattern relative to the substrate, which represent the direction following the accepted mathematical prescription
,
It is expressed by the measured value
，
x, y are expressed as measured values
。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311278420.1A CN117012683B (en) | 2023-10-07 | 2023-10-07 | Solar cell offset correction method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311278420.1A CN117012683B (en) | 2023-10-07 | 2023-10-07 | Solar cell offset correction method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117012683A true CN117012683A (en) | 2023-11-07 |
| CN117012683B CN117012683B (en) | 2023-12-22 |
Family
ID=88576578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311278420.1A Active CN117012683B (en) | 2023-10-07 | 2023-10-07 | Solar cell offset correction method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117012683B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117705175A (en) * | 2024-02-05 | 2024-03-15 | 宁德时代新能源科技股份有限公司 | Verification method and device of detection equipment, coating system and electronic equipment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07280741A (en) * | 1994-04-01 | 1995-10-27 | Hitachi Electron Eng Co Ltd | Position shift correcting method for wafer |
| US20070037301A1 (en) * | 2005-08-15 | 2007-02-15 | Igor Jekauc | Method and apparatus for monitoring precision of wafer placement alignment |
| US20090073405A1 (en) * | 2007-08-24 | 2009-03-19 | Nikon Corporation | Movable body drive method and movable body drive system, and pattern formation method and pattern formation apparatus |
| US20160313256A1 (en) * | 2015-04-21 | 2016-10-27 | Kla-Tencor Corporation | Systems and Methods for Run-Time Alignment of a Spot Scanning Wafer Inspection System |
| CN210617560U (en) * | 2018-12-21 | 2020-05-26 | 环晟光伏(江苏)有限公司 | Solar cell printing alignment structure |
| CN111634133A (en) * | 2020-05-09 | 2020-09-08 | 浙江爱旭太阳能科技有限公司 | Method for adjusting solar cell grid line offset and application thereof |
| CN115424969A (en) * | 2021-12-25 | 2022-12-02 | 微见智能封装技术(深圳)有限公司 | Real-time deviation rectifying method and system based on die bonder |
-
2023
- 2023-10-07 CN CN202311278420.1A patent/CN117012683B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07280741A (en) * | 1994-04-01 | 1995-10-27 | Hitachi Electron Eng Co Ltd | Position shift correcting method for wafer |
| US20070037301A1 (en) * | 2005-08-15 | 2007-02-15 | Igor Jekauc | Method and apparatus for monitoring precision of wafer placement alignment |
| US20090073405A1 (en) * | 2007-08-24 | 2009-03-19 | Nikon Corporation | Movable body drive method and movable body drive system, and pattern formation method and pattern formation apparatus |
| US20160313256A1 (en) * | 2015-04-21 | 2016-10-27 | Kla-Tencor Corporation | Systems and Methods for Run-Time Alignment of a Spot Scanning Wafer Inspection System |
| CN210617560U (en) * | 2018-12-21 | 2020-05-26 | 环晟光伏(江苏)有限公司 | Solar cell printing alignment structure |
| CN111634133A (en) * | 2020-05-09 | 2020-09-08 | 浙江爱旭太阳能科技有限公司 | Method for adjusting solar cell grid line offset and application thereof |
| CN115424969A (en) * | 2021-12-25 | 2022-12-02 | 微见智能封装技术(深圳)有限公司 | Real-time deviation rectifying method and system based on die bonder |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117705175A (en) * | 2024-02-05 | 2024-03-15 | 宁德时代新能源科技股份有限公司 | Verification method and device of detection equipment, coating system and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117012683B (en) | 2023-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN117012683B (en) | Solar cell offset correction method | |
| CN107045267B (en) | The optimization method and system of alignment precision correction | |
| CN108628107A (en) | Overlay error measurement method and overlay mark | |
| CN104251695B (en) | System and centering measurement method thereof are measured in a kind of laser alignment | |
| CN109115191A (en) | The multi-faceted coordinate measuring method of total station | |
| CN108917600A (en) | A kind of labyrinth blank processing positioning method based on three-dimensional reverse | |
| CN112706145B (en) | Mark3 type LNG ship datum axis marking method | |
| CN110516350B (en) | ERS point error correction method based on anisotropic weighting | |
| CN101413785A (en) | Error compensation method of positioning system based on double-rotating laser plane transmitter network | |
| CN111723441B (en) | Plastic part pre-deformation part modeling method, system, device and storage medium | |
| CN111504283A (en) | Method for calibrating point position of airplane assembly measurement field | |
| CN103915378A (en) | Etching method for improving uniformity of contact hole line width | |
| CN108333881A (en) | A kind of splicing adjustment method applied to write-through exposure machine | |
| CN111891176A (en) | Track measurement data integral adjustment method based on track geometric state measuring instrument | |
| CN111895921B (en) | Compensation method for improving measurement precision of system to height difference | |
| CN112729214A (en) | Measuring method for correcting reference point coordinates based on test data | |
| CN102566322A (en) | Multiple photoetching equipment correcting method | |
| CN117141110B (en) | Screen printing morphology analysis and regulation method | |
| CN102200692A (en) | Method for controlling exposure energy | |
| CN108995829B (en) | Platform on-orbit calibration method | |
| CN112355712B (en) | Trigger type on-machine measurement precision calibration method and system | |
| CN101739408A (en) | Semiconductor test data-based data processing method | |
| CN113608412B (en) | Semiconductor device, manufacturing method thereof and electronic equipment | |
| CN214892935U (en) | Stator frame location muscle position degree detects instrument | |
| CN112498731B (en) | Method for butt-joint repair of sawtooth-shaped wall plates |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |