CN114801439A - Solar cell SE distribution printing screen structure and printing method thereof - Google Patents

Solar cell SE distribution printing screen structure and printing method thereof Download PDF

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Publication number
CN114801439A
CN114801439A CN202110127508.8A CN202110127508A CN114801439A CN 114801439 A CN114801439 A CN 114801439A CN 202110127508 A CN202110127508 A CN 202110127508A CN 114801439 A CN114801439 A CN 114801439A
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Prior art keywords
graph
circumscribed circle
mark
mark point
solar cell
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CN202110127508.8A
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Inventor
谈锦彪
何秋霞
朱军
王鹏
马擎天
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Huansheng Photovoltaic Jiangsu Co Ltd
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Huansheng Photovoltaic Jiangsu Co Ltd
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Priority to CN202110127508.8A priority Critical patent/CN114801439A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41F—PRINTING MACHINES OR PRESSES
    • B41F15/00—Screen printers
    • B41F15/14—Details
    • B41F15/34—Screens, Frames; Holders therefor
    • B41F15/36—Screens, Frames; Holders therefor flat
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M1/00—Inking and printing with a printer's forme
    • B41M1/12—Stencil printing; Silk-screen printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Printing Plates And Materials Therefor (AREA)
  • Printing Methods (AREA)

Abstract

The invention provides a solar cell SE distribution printing screen plate structure and a printing method thereof, wherein the solar cell SE distribution printing screen plate structure comprises a first graph and a second graph, wherein a plurality of Mark points are respectively arranged in the first graph and the second graph, and a circumscribed circle or an circumscribed circle of the Mark point structure in the first graph which is adjacently arranged and a circumscribed circle or an circumscribed circle of the Mark point structure in the second graph are arranged in a staggered clearance manner; and the clearance distance is not less than the sum of the radius of the circumscribed circle or the circumscribed circle of the Mark point structure in the first graph and the radius of the circumscribed circle or the circumscribed circle of the Mark point structure in the second graph. The screen printing plate structure is simple in structure, namely the accuracy of identifying the Mark point position during the second printing is ensured by arranging two layers of printing screen printing plate patterns and setting the Mark point position as a staggered gap, so that the accuracy of twice printing and stacking is improved, the printing quality is ensured, the yield is improved, and the yield is improved to 98.8%.

Description

Solar cell SE distribution printing screen plate structure and printing method thereof
Technical Field
The invention belongs to the technical field of solar cell preparation, and particularly relates to a solar cell SE distribution printing screen structure and a printing method thereof.
Background
The existing Selective Emitter (SE) technology in the market is successfully applied to the PERC battery at present, and the battery efficiency can be effectively improved. The common battery printing technology is an SE distribution printing technology and a conventional step printing technology, and the machine table and the screen plate dot-grabbing figures used by the SE distribution printing technology and the conventional step printing technology are concentric circle dots, such as a novel SE Mark dot pattern structure and a preparation method thereof provided by the Chinese patent publication CN111370391A and a crystal silicon solar battery secondary printing front overprint electrode provided by the Chinese patent publication CN 206148443U. The two screen printing plate structures are both concentric circle superposition grab point identification printing, identification of a first alignment grab point of distributed printing is easy to confirm, however, when the grab point is aligned step by step for the second time, certain offset can often occur due to the fact that the figure of the concentric circle point is deformed due to printing slurry of the first printing point, so that the accuracy of printing alignment can be seriously influenced, and the printing quality is directly influenced.
Disclosure of Invention
The invention provides a solar cell SE distribution printing screen plate structure and a printing method thereof, and solves the technical problems that printing alignment is inaccurate and printing quality is influenced due to concentric Mark point printing in distribution printing in the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that:
a solar cell SE distribution printing screen plate structure comprises a first graph and a second graph, wherein a plurality of Mark points are respectively arranged in the first graph and the second graph, and a circumscribed circle or a circumscribed circle of the Mark point structure in the first graph which is adjacently arranged and a circumscribed circle or a circumscribed circle of the Mark point structure in the second graph are arranged in a staggered clearance mode; and the clearance distance is not less than the sum of the radius of the circumscribed circle or the circumscribed circle of the Mark point structure in the first graph and the radius of the circumscribed circle or the circumscribed circle of the Mark point structure in the second graph.
Furthermore, the number of Mark points in the first graph is the same as that of the Mark points in the second graph, and the number of the Mark points is four.
Further, the first graph is a screen printing plate provided with two main grids; the second graph is a screen printing plate provided with a plurality of fine grids; the main grid and the fine grid are straight lines which are continuously arranged; and the width of the main gate is larger than the maximum width of any Mark point.
Preferably, the Mark point in the first graph and the Mark point in the second graph are both located on the axis of the main grid and are symmetrically arranged.
Preferably, the Mark point close to the outermost end is the Mark point in the first graph or the Mark point in the second graph.
Further, the structure of the Mark point arranged in the first graph is the same as or different from the structure of the Mark point arranged in the second graph.
Preferably, all the Mark points in the first graph have the same structural shape; and all the Mark points in the same graph II are identical in structure shape.
Preferably, the maximum width of all Mark point structures is not more than 10 mm.
A solar cell SE distribution printing method adopts the screen printing plate structure, and comprises the following steps:
sequentially printing the first graph and the second graph on the front side of the silicon wafer by adopting laser;
enabling the circumscribed circle or the circumscribed circle of the Mark point structure in the first graph and the circumscribed circle or the circumscribed circle of the Mark point structure in the second graph which are adjacently arranged to be in staggered clearance arrangement;
and the clearance distance is not less than the sum of the radius of the circumscribed circle or the circumscribed circle of the Mark point structure in the first graph and the radius of the circumscribed circle or the circumscribed circle of the Mark point structure in the second graph.
Furthermore, the Mark point in the first graph and the Mark point in the second graph are both located on the axis of the main grid in the first graph and are symmetrically arranged.
By adopting the SE distribution printing screen plate structure of the solar cell and the printing method thereof, provided by the invention, the accuracy of identifying the Mark point position in the second printing is ensured by arranging two layers of printing screen plate patterns and setting the Mark point position as a staggered gap, so that the accuracy of twice printing and stacking is improved, the printing quality is ensured, the yield is improved, and the yield is improved to 98.8%.
Drawings
Fig. 1 is a schematic structural diagram of a SE distribution printing screen structure of a solar cell according to a first embodiment of the present invention;
FIG. 2 is an enlarged view of portion A of the first embodiment of the present invention;
fig. 3 is a schematic structural diagram of a SE distribution printing screen structure of a solar cell according to a second embodiment of the present invention;
FIG. 4 is an enlarged view of portion B of a second embodiment of the present invention;
fig. 5 is a schematic structural diagram of a SE distribution printing screen structure of a solar cell according to a third embodiment of the present invention;
FIG. 6 is an enlarged view of the portion C of the third embodiment of the present invention;
fig. 7 is a schematic structural diagram of a SE distribution printing screen structure of a solar cell according to a fourth embodiment of the present invention;
fig. 8 is an enlarged view of a portion D according to a fourth embodiment of the present invention.
In the figure:
10. a first pattern 11, a main grid 12 and a first Mark point
20. A second pattern 21, a fine grid 22 and a second Mark point
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
Example one:
the embodiment provides a solar cell SE distribution printing screen structure, as shown in fig. 1-2, which includes a screen having two patterns 10 of a main grid 11 and a screen having two patterns 20 of a plurality of fine grids 21, where the main grid 11 and the fine grids 21 are both straight lines which are continuously arranged; the pitch of the main gates 11, and the pitch between the fine gates 21 may be determined according to actual circumstances, and is not particularly limited herein. The first pattern 10 and the second pattern 20 have the same outer dimension, the main grids 11 are arranged perpendicular to the fine grids 21, and the main grids 11 are symmetrically arranged.
The first graph 10 and the second graph 20 are respectively provided with a plurality of Mark points one 12 and Mark points two 22, and in this embodiment, the number of the Mark points one 12 in the first graph 10 is the same as the number of the Mark points two 22 in the second graph 20, and the number of the Mark points two 22 is four.
As shown in fig. 1, four Mark points one 12 are respectively arranged close to four corners of the graph one 10, are located on the axis of the main grid 11, and are symmetrically arranged, that is, each main grid 11 is provided with two Mark points one 12, and each end is provided with one Mark point one 12; the purpose is to ensure that all the views in the layer one 10 can be recognized at the same time, and to accurately and simply calculate the positions of all the Mark points one 12.
And four Mark points two 22 in the graph two 20 are symmetrically arranged in each end portion of the four orientations and are arranged correspondingly to the two main grids 11 while being arranged adjacent to the four Mark points one 12. Meanwhile, the width of the main gate 11 is larger than the maximum width of any Mark point, i.e., all Mark points are located within the width of the main gate 11. The purpose of being arranged in the main grid 11 is to ensure easy positioning of the identification position thereof, and also to improve the appearance of the whole cell because the main grid 11 is shielded by solder strips or stacked by the stack during the assembly of the stack tiles.
Further, the four Mark points one 12 have a circular structure, and all the Mark points one 12 on the same graph one 10 have the same structure. The four Mark points two 22 on the graph two 20 are all in a cross-shaped structure. And the diameter of the circle of the first Mark point 12 structure in the first graph 10 and the diameter of the circumscribed circle of the second Mark point 22 structure in the second graph 20 which are adjacently arranged are the same and are not more than 10 mm.
Preferably, as shown in fig. 2, the Mark point one 12 and the Mark point two 22 which are adjacently arranged are arranged in a staggered gap manner, and the distance between two circle centers of a circle where the Mark point one 12 is located and a circumscribed circle of the Mark point two 22 is greater than the sum of the radii of the two circles. And the Mark point close to the outermost end in each main gate 11 is the first Mark point 12 in the graph a 10, i.e. two Mark points two 22 are both located between the two first Mark points 12. The Mark points of different graphic layers arranged in a staggered clearance way can ensure that each Mark point is accurately identified and does not have identification deviation when each graphic layer is printed; the identification of the Mark point I12 and the Mark point II 22 of the two groups of graphs can be completed without using a more accurate camera, so that the accurate overlapping and corresponding arrangement of the upper and lower positions of the graph I10 and the graph II 20 is ensured; meanwhile, the bad problem that the position of the second pattern 20 is mistakenly placed due to the fact that Mark point identification is mistaken to cause printing of the fine grid 21 can be solved, the printing quality and the yield are improved, and the utilization rate of silver paste can also be improved.
Example two:
as shown in fig. 3 to 4, the greatest difference between the second embodiment and the first embodiment is that the Mark point close to the outermost end in each main gate 11 is the second Mark point 22 in the graph two 20, i.e., two Mark points two 22 are located outside two Mark points one 12. And the gap distance between the adjacent first Mark point 12 and the second Mark point 22 is still unchanged. The shape of the first Mark point 12 is still a circular structure, the shape of the second Mark point 22 is still a cross-shaped structure, and the diameter of the first Mark point 12 is the same as the diameter of the circumscribed circle of the second Mark point 22. In this embodiment, it is also ensured that the Mark point one 12 in the first graph 10 and the Mark point two 22 in the second graph 20 can be recognized by the cameras respectively, and no position deviation occurs, and the Mark points can be captured quickly and accurately, thereby ensuring that the first graph 10 and the second graph 20 are accurately stacked.
Example three:
as shown in fig. 5-6, the biggest difference between the third embodiment and the first embodiment is that the shape of the Mark point one 12 in the graph one 10 is a square structure, and the shape of the Mark point two 22 in the graph two 20 is a circular structure. The Mark point I12 and the Mark point II 22 with different structures are easier to recognize, and when the Mark point II 22 in the graph II 20 is printed, the recognition of the Mark point II 22 in the graph II 20 is not influenced by the printing effect of the Mark point I12 in the graph I10, so that the upper graph and the lower graph are accurately aligned without recognition deviation, the Mark point I12 in the graph I10 and the Mark point II 22 in the graph II 20 can be quickly and accurately captured, and the printing quality is ensured.
Example four:
as shown in fig. 7 to 8, the biggest difference between the fourth embodiment and the first embodiment is that the shape of the Mark point one 12 in the first graph 10 and the shape of the Mark point two 22 in the second graph 20 are both circular structures. The position distribution of the first Mark point 12 and the second Mark point 22 on the same main grating 11 is not changed, that is, the first Mark point 12 and the second Mark point 22 which are adjacently arranged are still arranged in the dislocation gap.
A solar cell SE distribution printing method adopts the screen structure as described in any one of the above, and comprises the following steps:
firstly: and executing a graph I10 on the front surface of the silicon wafer by adopting laser, firstly printing a screen printing plate layer with a main grid 11, and simultaneously ensuring that four Mark points I12 are respectively arranged close to four corners of the graph I10, are positioned on the axis of the main grid 11 and are symmetrically arranged. The first pattern 10 is printed to obtain the main grid 11, and then the second pattern 20 is printed to obtain the fine grid 21, so as to ensure the width and height of the fine grid 21, ensure all the features of the fine grid 21, and avoid being collapsed, so as to prevent the conversion efficiency of the battery from being affected.
In the printing process, the selective emitter is heavily doped at the contact part of the metal grid line (electrode) and the silicon wafer, and lightly doped at the position between the electrodes. The structure can reduce the recombination of the diffusion layer, thereby improving the short-wave response of light, reducing the contact resistance of the front metal electrode and silicon, better improving the short-circuit current, the open-circuit voltage and the filling factor and improving the conversion efficiency.
Secondly, the method comprises the following steps: and then, executing a second graph 20 on the front surface of the silicon wafer by adopting laser, obtaining a plurality of screen layers of the fine grids 21, and simultaneously ensuring that four Mark points II 22 are symmetrically arranged in each end part in four directions, are arranged on two main grids 11 correspondingly and are arranged adjacent to the four Mark points I12 simultaneously.
The graphic structure of the Mark point one 12 and the graphic structure of the Mark point two 22 may be circular, cross-shaped, square or other regular polygon structures with any shapes, but it is required to ensure that the structures of all the Mark points one 12 in the graph one 10 are the same, and the structures of all the Mark points two 22 in the graph two 20 are the same.
The relative position between the first Mark point 12 and the second Mark point 22 is not particularly limited, as long as it is ensured that all the first Mark points 12 in the first graph 10 and all the second Mark points 22 in the second graph 20 are located on the axis of the main grid 11 in the first graph 10 and are symmetrically arranged when the second graph 20 is printed; and the circumscribed circle or the circumscribed circle of the first Mark point 12 structure in the first graph 10 and the circumscribed circle or the circumscribed circle of the second Mark point 22 structure in the second graph 20 which are adjacently arranged are arranged in a staggered clearance, and the clearance distance is not less than the sum of the radius of the circumscribed circle or the circumscribed circle of the first Mark point 12 structure in the first graph 10 and the radius of the circumscribed circle or the circumscribed circle of the second Mark point 22 structure in the second graph 20.
During printing, the width of the main gate 11 is larger than the maximum width of any Mark point, i.e. all Mark points are within the width of the main gate 11. The purpose of being arranged in the main grid 11 is to ensure easy positioning of the identification position thereof, and also to improve the appearance of the whole cell because the main grid 11 is shielded by solder strips or stacked by the stack during the assembly of the stack tiles.
Under the same conditions, the comparison values of the yield obtained by the SE distribution printing method (in this embodiment) using the halftone structure provided by the present invention and the yield obtained by the SE distribution printing method (comparative example i) using the halftone structure disposed concentrically and the yield obtained by the conventional general distribution printing method (comparative example ii) are shown in table 1.
TABLE 1 comparison of test results
Figure BDA0002923972290000071
From the above table, it can be seen that the solar cell SE distribution printing screen structure and the printing method thereof designed by the invention ensure the accuracy of identifying the Mark point position during the second printing by setting two layers of printing screen patterns and setting the Mark point position as a staggered gap, so as to improve the accuracy of twice printing and stacking, thereby ensuring the printing quality and improving the yield to 98.8%.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.

Claims (10)

1. A solar cell SE distribution printing screen structure is characterized by comprising a first graph and a second graph, wherein a plurality of Mark points are respectively arranged in the first graph and the second graph, and a circumscribed circle or a circumscribed circle of the Mark point structure in the first graph which is adjacently arranged and a circumscribed circle or a circumscribed circle of the Mark point structure in the second graph are arranged in a staggered clearance manner; and the clearance distance is not less than the sum of the radius of the circumscribed circle or the circumscribed circle of the Mark point structure in the first graph and the radius of the circumscribed circle or the circumscribed circle of the Mark point structure in the second graph.
2. The solar cell SE distribution printing screen structure as claimed in claim 1, wherein the number of the Mark points in the first graph is the same as the number of the Mark points in the second graph, and the number of the Mark points is four.
3. The solar cell SE distribution printing screen structure as defined in claim 1 or 2, wherein the first pattern is a screen provided with two main grids; the second graph is a screen printing plate provided with a plurality of fine grids; the main grid and the fine grid are straight lines which are continuously arranged; and the width of the main gate is larger than the maximum width of any Mark point.
4. The solar cell SE distribution printing screen structure as claimed in claim 3, wherein the Mark points in the first graph and the Mark points in the second graph are located on an axis of the main grid and are symmetrically arranged.
5. The solar cell SE distribution printing screen structure as claimed in claim 4, wherein the Mark points near the outermost end are the Mark points in the first graph or the Mark points in the second graph.
6. The solar cell SE distribution printing screen structure as claimed in any one of claims 1 to 2 and 4 to 5, wherein the structure of the Mark points arranged in the first graph is the same as or different from the structure of the Mark points arranged in the second graph.
7. The SE distribution printing screen structure of the solar cell as claimed in claim 6, wherein the first pattern has the same structure shape of all the Mark points; and all the Mark points in the same graph II are identical in structure shape.
8. The solar cell SE distribution printing screen structure as defined by claim 7, wherein the maximum width of all the Mark point structures is not more than 10 mm.
9. A SE distribution printing method for a solar cell, wherein the screen structure of any one of claims 1 to 8 is used, and the steps include:
sequentially printing the first graph and the second graph on the front side of the silicon wafer by adopting laser;
enabling the circumscribed circle or the circumscribed circle of the Mark point structure in the first graph and the circumscribed circle or the circumscribed circle of the Mark point structure in the second graph which are adjacently arranged to be in staggered clearance arrangement;
and the clearance distance is not less than the sum of the radius of the circumscribed circle or the circumscribed circle of the Mark point structure in the first graph and the radius of the circumscribed circle or the circumscribed circle of the Mark point structure in the second graph.
10. The solar cell SE distribution printing screen structure of claim 9, wherein the Mark points in the first pattern and the Mark points in the second pattern are located on an axis of a main grid in the first pattern and are symmetrically arranged.
CN202110127508.8A 2021-01-29 2021-01-29 Solar cell SE distribution printing screen structure and printing method thereof Pending CN114801439A (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202293614U (en) * 2011-09-28 2012-07-04 中节能太阳能科技（镇江）有限公司 Positive silver screen printing plate of screen printing crystalline silicon solar cell
CN104332509A (en) * 2014-11-04 2015-02-04 东莞南玻光伏科技有限公司 Solar cell electrode printing screen, solar cell electrode and manufacturing method thereof
CN110350054A (en) * 2019-06-13 2019-10-18 东方环晟光伏（江苏）有限公司 A kind of printing process of solar energy crystal-silicon battery slice
CN110459616A (en) * 2018-10-17 2019-11-15 协鑫集成科技股份有限公司 Silicon substrate, solar battery sheet and forming method thereof, printing screen plate
CN111098587A (en) * 2019-12-30 2020-05-05 晋能光伏技术有限责任公司 Printing screen for heterojunction solar cell and printing method thereof
CN210617560U (en) * 2018-12-21 2020-05-26 环晟光伏(江苏)有限公司 Solar cell printing alignment structure
US20210245492A1 (en) * 2018-07-24 2021-08-12 Zhejiang Aiko Solar Energy Technology Co., Ltd. Crystalline silicon solar cell screen for positive electrode hollow molding
CN214688470U (en) * 2021-01-29 2021-11-12 环晟光伏(江苏)有限公司 Solar cell SE distributes printing half tone structure

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202293614U (en) * 2011-09-28 2012-07-04 中节能太阳能科技（镇江）有限公司 Positive silver screen printing plate of screen printing crystalline silicon solar cell
CN104332509A (en) * 2014-11-04 2015-02-04 东莞南玻光伏科技有限公司 Solar cell electrode printing screen, solar cell electrode and manufacturing method thereof
US20210245492A1 (en) * 2018-07-24 2021-08-12 Zhejiang Aiko Solar Energy Technology Co., Ltd. Crystalline silicon solar cell screen for positive electrode hollow molding
CN110459616A (en) * 2018-10-17 2019-11-15 协鑫集成科技股份有限公司 Silicon substrate, solar battery sheet and forming method thereof, printing screen plate
CN210617560U (en) * 2018-12-21 2020-05-26 环晟光伏(江苏)有限公司 Solar cell printing alignment structure
CN110350054A (en) * 2019-06-13 2019-10-18 东方环晟光伏（江苏）有限公司 A kind of printing process of solar energy crystal-silicon battery slice
CN111098587A (en) * 2019-12-30 2020-05-05 晋能光伏技术有限责任公司 Printing screen for heterojunction solar cell and printing method thereof
CN214688470U (en) * 2021-01-29 2021-11-12 环晟光伏(江苏)有限公司 Solar cell SE distributes printing half tone structure

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