CN206819999U - PERC cell backside lbg patterns - Google Patents
PERC cell backside lbg patterns Download PDFInfo
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- CN206819999U CN206819999U CN201720700930.7U CN201720700930U CN206819999U CN 206819999 U CN206819999 U CN 206819999U CN 201720700930 U CN201720700930 U CN 201720700930U CN 206819999 U CN206819999 U CN 206819999U
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Abstract
The utility model provides a kind of PERC cell backsides lbg pattern, the grooved pattern includes some slotted lines being parallel to each other, the slotted line includes the real segment of fluting and the phantom line segments of unslotted, the phantom line segments are provided with spot hole, and the real segment on adjacent two slotted lines staggers with spot hole.Pattern is closed using point, knot, it is ensured that stabilised efficiency, can reach the level of production；No longer occur dotted line after sintering and corner comes off situation；Fragment rate ratio has declined.
Description
Technical field
Technical field of solar batteries is the utility model is related to, more particularly to a kind of PERC cell backsides lbg figure
Case.
Background technology
To carry on the back passivation technology and one layer of insulating protective film is generally covered at the cell piece back side, this layer of insulating protective film can not be conductive,
Therefore, before printing, it is necessary to scratched the insulating protective film at the back side by laser equipment, slotted, expose silicon substrate, protected
Aluminium paste after card printing contacts sintering with silicon chip and forms back electrode, so that the pattern of lbg is to the blunt of insulating protective layer
Change effect important.
Existing grooved pattern common are two kinds of line segment types (Fig. 1) and point-type (Fig. 2), and line segment type laser solution has figure
The advantages that shape simple process time is short, but dotted line case be present after back surface field sintering, and edge occurs that slurry comes off；And swash
Light-spot type scheme is because of energy and point porosity requirement, and it is higher to ultimately result in resultant battery piece fragment rate, and long processing time.
Utility model content
Technical problem to be solved in the utility model is：In order to overcome deficiency of the prior art, the utility model carries
For a kind of PERC cell backsides lbg pattern, using the pattern of Joint of Line and Dot, it is ensured that stabilised efficiency, while reduce fragment
Rate.
The utility model solves its technical problem technical scheme to be taken：A kind of PERC cell backsides lbg
Pattern, the grooved pattern include some slotted lines being parallel to each other, and the slotted line includes the real segment of fluting and do not opened
The phantom line segments of groove, the phantom line segments are provided with spot hole, and the real segment on adjacent two slotted lines staggers with spot hole.Line segment and aperture
Stagger, first, preventing that the secondary laser that same position is formed is caused to damage to silicon chip, dislocation figure has necessarily to Rsh, Rs
Improvement result.
Preferably, in order to reduce the difficulty of fluting, the efficiency of fluting is improved, it is adjacent using the regular figure being uniformly arranged
Phantom line segments between two real segments are provided with a spot hole, the real segment and the equally spaced distribution of spot hole.
Preferably, the real segment on adjacent two slotted lines staggers with spot hole equipotential.
Further, the width of the real segment is 35um-50um, length 500um-1200um, and dotted line segment length is
1000um-1500um, the aperture of the spot hole is 120um-200um, and the spacing between adjacent two slotted lines is 600um-
1200um.Change in laser boring area certain limit, power is influenceed smaller.
Preferably, the real segment width is 35um, and length 800um, dotted line segment length is 1500um, the spot hole
Aperture is 160um, and the spacing between adjacent two slotted lines is 1000um.
Preferably, the real segment width is 40um, and length 800um, dotted line segment length is 1000um, the spot hole
Aperture is 180um, and the spacing between adjacent two slotted lines is 1200um.
Preferably, the real segment width is 48um, length 1200um, and dotted line segment length is 1000um, the spot hole
Aperture be 200um, the spacing between adjacent two slotted lines is 600um.
The beneficial effects of the utility model are：
A), point, knot close pattern, it is ensured that stabilised efficiency, can reach the level of production；
B) no longer occur dotted line after, sintering and corner comes off situation；
C), fragment rate ratio has declined.
Brief description of the drawings
The utility model is described in further detail with reference to the accompanying drawings and examples.
Fig. 1 is the structural representation of prior art line segment type.
Fig. 2 is the structural representation of prior art point-type.
Fig. 3 is the structural representation of the best embodiment of the utility model.
In figure：100th, slotted line, 1, real segment, 2, phantom line segments, 3, spot hole.
Embodiment
The utility model is described in detail presently in connection with accompanying drawing.This figure is simplified schematic diagram, only in a schematic way
Illustrate basic structure of the present utility model, therefore it only shows the composition relevant with the utility model.
As shown in figure 3, a kind of PERC cell backsides lbg pattern of the present utility model, if the grooved pattern includes
The slotted line 100 that dry bar is parallel to each other, the slotted line 100 includes the real segment 1 of fluting and the phantom line segments 2 of unslotted, described
Phantom line segments 2 are provided with spot hole 3, and the real segment 1 on adjacent two slotted lines 100 staggers with spot hole 3.
Phantom line segments 2 in the present embodiment between adjacent two real segment 1 are provided with a spot hole 3, the real segment 1 and point
3 equally spaced distribution of hole.
The width D of the real segment 1 is 35um-50um, and length L is 500um-1200um, and the length S of phantom line segments 2 is
1000um-1500um, the length S of phantom line segments 2 are the interval of adjacent real segment 1, and the aperture Φ of the spot hole 3 is 120um-
200um, the spacing H between adjacent two slotted lines 100 is 600 um-1200um.Have chosen in the present embodiment three groups of data with
Producing line production decision is contrasted, and data decimation table is shown in Table 1, unit (um).
The data decimation table of table 1
The pattern at dotted line interval is drawn on laser equipment, then, is slotted, opened in PERC cell backsides using laser equipment
Groove pattern is the pattern of above-mentioned Joint of Line and Dot, the PERC batteries to complete is passed through into test verification, testing result is shown in Table 2 institutes
Show, fluting scheme of the present utility model, more than 0.01W, U are improved on powerOC、ISCOn substantially lifted, conventional efficient
Relatively normal production improves more than 0.05%, fluting scheme of the present utility model, in UOC、ISCIt is upper that there is some superiority, and
Solve the problems, such as that the dotted line occurred after back surface field sintering and edge slurry come off.
The data decimation table of table 2
| Scheme number | Pmpp | Uoc | Isc | Rs | Rsh | FF | NCell | |
| - | Producing line production decision | 0.000 | 0.0 | 0.000 | 0.00 | 0 | 0.00% | 0.00% |
| 1 | Joint of Line and Dot scheme | 0.01 | 0.3 | 0.014 | -0.02 | 64 | 0.00% | 0.05% |
| 2 | Joint of Line and Dot scheme | 0.019 | 0.6 | 0.019 | 0.02 | 151 | 0.05% | 0.08% |
| 3 | Joint of Line and Dot scheme | 0.013 | 0.7 | 0.013 | -0.02 | 95 | 0.01% | 0.05% |
Wherein, Pmpp represents the power of battery, and Uoc represents open-circuit voltage, and Isc represents short circuit current, and Rs represents series resistance,
Rsh represents parallel resistance, and FF represents filling, and NCell represents conventional efficient.The power of battery, open-circuit voltage, short circuit current and filling
Relation be：
The power of battery (Pmpp)=voltage (UOC) × electric current (ISC) × filling (FF)
On the basis of the parameters of the cell slice test of producing line production decision production, each amount is measured by above-mentioned formula
Initial data, initial data do difference with the data of producing line production decision again, obtain data in table 2.
Using it is above-mentioned according to desirable embodiment of the present utility model as enlightenment, by above-mentioned description, related work
Personnel can carry out various changes and amendments in without departing from the scope of the utility model completely.This item utility model
Technical scope is not limited to the content on specification, it is necessary to determines its technical scope according to right.
Claims (7)
- A kind of 1. PERC cell backsides lbg pattern, it is characterised in that：The grooved pattern is parallel to each other including some Slotted line (100), the slotted line (100) include fluting real segment (1) and unslotted phantom line segments (2), the dotted line Section (2) is provided with spot hole (3), and the real segment (1) on adjacent two slotted lines (100) staggers with spot hole (3).
- 2. PERC cell backsides lbg pattern as claimed in claim 1, it is characterised in that：Adjacent two real segment (1) it Between phantom line segments (2) be provided with a spot hole (3), the real segment (1) and spot hole (3) equally spaced distribution.
- 3. PERC cell backsides lbg pattern as claimed in claim 1, it is characterised in that：Adjacent two slotted lines (100) real segment (1) on staggers with spot hole (3) equipotential.
- 4. the PERC cell backside lbg patterns as described in claim any one of 1-3, it is characterised in that：The real segment (1) width is 35um-50um, length 500um-1200um, and phantom line segments (2) length is 1000um-1500um, the spot hole (3) aperture is 120um-200um, and the spacing between adjacent two slotted lines (100) is 600um-1200um.
- 5. PERC cell backsides lbg pattern as claimed in claim 4, it is characterised in that：Real segment (1) width For 35um, length 800um, phantom line segments (2) length is 1500um, and the aperture of the spot hole (3) is 160um, and adjacent two are opened Spacing between the line of rabbet joint (100) is 1000um.
- 6. PERC cell backsides lbg pattern as claimed in claim 4, it is characterised in that：Real segment (1) width For 40um, length 800um, phantom line segments (2) length is 1000um, and the aperture of the spot hole (3) is 180um, and adjacent two are opened Spacing between the line of rabbet joint (100) is 1200um.
- 7. PERC cell backsides lbg pattern as claimed in claim 4, it is characterised in that：Real segment (1) width For 48um, length 1200um, phantom line segments (2) length is 1000um, and the aperture of the spot hole (3) is 200um, and adjacent two are opened Spacing between the line of rabbet joint (100) is 600um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720700930.7U CN206819999U (en) | 2017-06-15 | 2017-06-15 | PERC cell backside lbg patterns |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720700930.7U CN206819999U (en) | 2017-06-15 | 2017-06-15 | PERC cell backside lbg patterns |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206819999U true CN206819999U (en) | 2017-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720700930.7U Active CN206819999U (en) | 2017-06-15 | 2017-06-15 | PERC cell backside lbg patterns |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113634906A (en) * | 2021-08-10 | 2021-11-12 | 通威太阳能（安徽）有限公司 | Laser marking method for HJT solar cell, cell preparation method and cell |
| CN113814570A (en) * | 2021-01-20 | 2021-12-21 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Laser marking method of silicon wafer and manufacturing method of heterojunction battery |
-
2017
- 2017-06-15 CN CN201720700930.7U patent/CN206819999U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113814570A (en) * | 2021-01-20 | 2021-12-21 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Laser marking method of silicon wafer and manufacturing method of heterojunction battery |
| CN113634906A (en) * | 2021-08-10 | 2021-11-12 | 通威太阳能（安徽）有限公司 | Laser marking method for HJT solar cell, cell preparation method and cell |
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